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Vishay Siliconix SQM35N30-97_GE3
- Part No.:
- SQM35N30-97_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM35N30-97_GE3.pdf
- Description:
- MOSFET N-CH 300V 35A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:1,467
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Product details
Overview
SQM35N30-97_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 300 V drain-source breakdown voltage, 35 A continuous drain current at 25 °C, and 0.097 Ω RDS(on) at VGS = 10 V - designed for high-voltage DC-DC converters, on-board chargers, and traction inverters in EV/HEV powertrain systems.
For engineers reviewing the SQM35N30-97_GE3 datasheet, SQM35N30-97_GE3 pinout, SQM35N30-97_GE3 application, or SQM35N30-97_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, low thermal resistance (RthJC = 0.4 °C/W), and robust avalanche energy rating (EAS = 54 mJ).
Technical Context
This MOSFET employs a trench-gate structure optimized for low conduction loss and fast switching in high-voltage automotive power stages. Its gate charge profile (Qg = 86–130 nC) and dynamic parameters (Ciss = 4515–5650 pF, Qgd = 28 nC) support efficient operation in hard-switched topologies up to 150 V bus voltage.
The device integrates a robust body diode with VSD = 0.8–1.5 V at IF = 20 A and is 100 % tested for unclamped inductive switching (UIS) and gate resistance (Rg = 0.3–1.5 Ω), ensuring reliability under transient overloads common in motor control and battery management circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 300 V - supports 250 V nominal DC bus with 20 % margin for transients in EV traction and charging systems |
| RDS(on) @ VGS = 10 V | 0.097 Ω - enables <1 W conduction loss at 35 A, critical for thermal management in sealed power modules |
| ID (continuous, TC = 25 °C) | 35 A - delivers high power density in TO-263 package without external heatsink at moderate ambient |
| EAS | 54 mJ - withstands single-pulse inductive energy from 0.1 mH loads, essential for fault-tolerant motor drive designs |
| RthJC | 0.4 °C/W - allows direct mounting to copper-clad PCB or heatsink, enabling compact thermal design in space-constrained automotive ECUs |
| TJ max | +175 °C - certified for under-hood operation and sustained high-temperature duty cycles per AEC-Q101 |
| Qg | 86–130 nC - balances switching speed and gate driver power requirements in 10–100 kHz PWM applications |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, isolated heat sink tab (Drain-connected), 3-lead configuration with G-D-S terminal layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 10 V logic-level drive; Rg = 0.3–1.5 Ω ensures stable turn-on/turn-off timing and EMI control |
| D (Drain) | Main current output / heat sink connection | Internally connected to metal tab; requires soldered thermal pad for RthJC = 0.4 °C/W performance |
| S (Source) | Power return / reference node | Provides low-inductance source path; used as local ground reference for gate driver and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power electronics per stress test standards including HTGB, HTRB, and UIS |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and single-pulse avalanche ruggedness - no field failures due to latent parametric drift |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar MOSFETs at same die size, improving efficiency in 300 V-class systems |
| Low RthJC (0.4 °C/W) | Enables >300 W power dissipation with ≤50 °C temperature rise above case, reducing need for bulky heatsinks |
| Body diode with soft recovery | VSD = 0.8–1.5 V and low Qrr minimize reverse-recovery losses during synchronous rectification in bidirectional converters |
Applications
| On-Board Charger (OBC) | Traction Inverter Stage |
|---|---|
Use Scenario: High-frequency AC/DC conversion stage in 6.6 kW bi-directional OBC for plug-in hybrid vehicles. IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved LLC resonant converter operating at 100–300 kHz. Use Value: Low Coss (320–400 pF) and optimized Qgd/Qgs ratio reduce switching loss and improve ZVS behavior across wide input voltage range (200–450 V DC). | Use Scenario: Phase-leg switching element in 400 V traction inverter for electric power steering (EPS) and auxiliary drives. IC Role / Device Role / Timing Role: Half-bridge low-side switch controlling motor phase current with 10–20 kHz PWM modulation. Use Value: 175 °C TJ rating and 100 % UIS testing ensure survival during load dump, short-circuit, and regenerative braking events. |
| High-Voltage DC-DC Converter | Battery Management System (BMS) Disconnection |
Use Scenario: Isolated step-down converter supplying 12 V auxiliary power from 400 V battery pack in BEVs. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge configuration. Use Value: Body diode forward voltage (VSD = 0.8–1.5 V) and low RDS(on) enable >95 % efficiency at 20 A load without external Schottky diodes. | Use Scenario: Main contactor replacement in high-side battery disconnect circuit for ISO 6469-1 compliant BMS. IC Role / Device Role / Timing Role: Solid-state isolation switch interrupting up to 35 A continuous current during fault conditions. Use Value: 300 V VDS and 54 mJ EAS allow safe interruption of inductive battery cable discharge without arcing or latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW35N30M2 | 300 V, 35 A, RDS(on) = 0.095 Ω, TO-247 package, non-AEC-Q101 | Larger footprint, higher RthJA, not qualified for automotive temperature cycling | Preferred for industrial UPS or solar inverters where AEC-Q101 is not required |
| IXTH35N30P | 300 V, 35 A, RDS(on) = 0.092 Ω, TO-247, AEC-Q101 qualified, higher Qg (150 nC) | Slower switching due to higher gate charge; requires stronger gate driver | Used when higher avalanche energy (EAS = 120 mJ) is prioritized over switching speed |
Compared with STW35N30M2 and IXTH35N30P, the SQM35N30-97_GE3 offers optimal balance of automotive qualification, thermal performance (RthJC = 0.4 °C/W), and gate drive efficiency (Qg = 86–130 nC), making it preferred for space- and thermally constrained EV power modules.
Availability
SQM35N30-97_GE3 is available at Aetrix Electronics and suitable for electric vehicle on-board chargers, traction inverters, and high-voltage DC-DC converters requiring stable component supply, long-term automotive lifecycle support, and traceable AEC-Q101 compliance.
Supply support for SQM35N30-97_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade validation.
The SQM35N30-97_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-efficiency, high-temperature operation in EV/HEV power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for SQM35N30-97_GE3 at 125 °C case temperature?
The SQM35N30-97_GE3 supports 20 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures reliable operation in high-ambient environments such as engine compartments or power inverters. The SQM35N30-97_GE3 maintains RDS(on) ≤ 0.214 Ω under these conditions, preserving conduction efficiency.
Is SQM35N30-97_GE3 suitable for synchronous rectification in high-frequency DC-DC converters?
Yes, the SQM35N30-97_GE3 is well-suited for synchronous rectification due to its low RDS(on) (0.097 Ω), fast switching characteristics (tr = 40–60 ns, tf = 20–30 ns), and body diode with VSD = 0.8–1.5 V at 20 A. Its Coss (320–400 pF) and Qgd (28 nC) support zero-voltage switching in LLC topologies up to 300 kHz. The SQM35N30-97_GE3 also features soft-recovery behavior verified by typical characterization curves.
Does SQM35N30-97_GE3 have AEC-Q101 qualification documentation available?
Yes, the SQM35N30-97_GE3 is explicitly stated as AEC-Q101 qualified in its Vishay datasheet (S15-1874-Rev. B). Parametric verification is ongoing per footnote "d", but qualification testing-including HTGB, HTRB, and UIS-has been completed and documented. Full AEC-Q101 reports and test summaries are accessible via Vishay's automotive support portal using document number 66742. The SQM35N30-97_GE3 carries GE3 suffix denoting automotive-grade packaging and traceability.
What is the gate threshold voltage range for SQM35N30-97_GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQM35N30-97_GE3 is 2.5–3.5 V at ID = 250 μA, with typical value 3.0 V. This logic-level compatibility allows direct interfacing with 3.3 V or 5 V microcontrollers when paired with appropriate gate drivers. However, full enhancement requires VGS ≥ 10 V to achieve rated RDS(on); therefore, the SQM35N30-97_GE3 must be driven with a dedicated gate driver capable of delivering ±10 V swing and peak current >2 A for fast transitions.
Can SQM35N30-97_GE3 replace older-generation 300 V MOSFETs like IRF640 without layout changes?
No - the SQM35N30-97_GE3 uses TO-263 (D2PAK) packaging, whereas IRF640 uses TO-220. Their footprints, thermal pad requirements, and pinouts differ significantly. While both are N-channel 300 V devices, the SQM35N30-97_GE3 demands a larger PCB pad for the exposed drain tab and different gate-source routing due to its surface-mount orientation. Layout revision is required; the SQM35N30-97_GE3 is not a drop-in replacement for through-hole predecessors.
SQM35N30-97_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 300 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 97mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM35N30-97_GE3 FAQ
1.How can I place an order for SQM35N30-97_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM35N30-97_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM35N30-97_GE3 reliable?
The price and inventory of SQM35N30-97_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM35N30-97_GE3 is usually 5 days.
3.What payment methods are accepted for SQM35N30-97_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM35N30-97_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM35N30-97_GE3?
SQM35N30-97_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM35N30-97_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM35N30-97_GE3?
For technical support, including SQM35N30-97_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM35N30-97_GE3 requirements.
6.How does Aetrix verify that SQM35N30-97_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM35N30-97_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM35N30-97_GE3 meets industry standards.
7.What is the process for return or replacement of SQM35N30-97_GE3?
All SQM35N30-97_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM35N30-97_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM35N30-97_GE3 part is unused and in its original packaging.
Return procedure for SQM35N30-97_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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