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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM40010EL_GE3

Name: SQM40010EL_GE3
Brand: Vishay Siliconix
SKU: SQM40010EL_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM40010EL_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM40010EL_GE3.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

SQM40010EL_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-263 (D2PAK) package, rated for 40 V V_DS, 120 A continuous drain current at T_C = 25 °C, and R_DS(on) = 1.6 mΩ at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for engine control, DC-DC converters, and high-current motor drive stages.

For engineers reviewing the SQM40010EL_GE3 datasheet, SQM40010EL_GE3 pinout, SQM40010EL_GE3 application, or SQM40010EL_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive (1.9 mΩ), 100 % R_g and UIS testing, and thermal resistance of 0.4 °C/W (junction-to-case), critical for high-efficiency automotive power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current DC applications. Its gate charge profile (Q_g = 150–230 nC, Q_gd = 12–19 nC) supports efficient hard-switching operation with controlled dV/dt and reduced Miller-induced turn-on risk.

The device integrates a robust body diode with V_SD = 0.85–1.5 V at I_F = 70 A and I_SM = 300 A pulsed source current capability, enabling reliable synchronous rectification and freewheeling in bidirectional power converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and DC-DC primary-side switching
R_DS(on) @ 10 V	1.6 mΩ - Enables ≤ 2.3 W conduction loss at 120 A, reducing heatsink requirements in compact modules
R_DS(on) @ 4.5 V	1.9 mΩ - Ensures full enhancement with standard 5 V logic-level gate drivers in microcontroller-based systems
I_D (continuous)	120 A @ T_C = 25 °C - Supports high-power traction inverters and starter-generator interfaces without derating at board level
T_J max	+175 °C - Meets under-hood thermal requirements for engine control units and transmission control modules
R_thJC	0.4 °C/W - Allows direct mounting to copper heatsinks for >300 W power dissipation in TO-263 footprint
E_AS	320 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events in automotive subsystems

Pinout & Package

TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to D pin and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–20 V gate-source voltage; requires <2.5 Ω series resistance to limit peak gate current during 150–230 nC total charge transfer
D	Drain terminal / heat sink interface	Connected to high-side switch node or bus rail; tab must be soldered to ≥1"² 2 oz. copper pad for R_thJA = 40 °C/W performance
S	Source return path	Common reference for gate drive and current sensing; low-inductance layout essential to minimize switching overshoot

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements including HTOL, TC, UHAST, and ESD, supporting ASIL-B system integration
100 % R_g tested	Ensures gate resistance between 0.8–2.5 Ω across production lot, guaranteeing consistent turn-on/turn-off timing in parallel configurations
100 % UIS tested	Each unit passes single-pulse avalanche stress at I_AS = 80 A and E_AS = 320 mJ, confirming ruggedness against inductive switching faults
Low R_DS(on) at 4.5 V	1.9 mΩ enables use with 5 V microcontrollers and automotive PMICs without level-shifting, simplifying gate driver design
Thermal resistance R_thJC = 0.4 °C/W	Permits >300 W steady-state power dissipation when mounted on external heatsink, eliminating need for forced air cooling in many applications

Applications

Engine Control Unit (ECU) High-Side Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: Switching 12 V battery rail to fuel injector or ignition coil loads with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: High-side power switch controlling inductive load current; handles repetitive UIS events during coil de-energization. Use Value: 175 °C rating and AEC-Q101 qualification ensure reliability in under-hood environments; 1.6 mΩ R_DS(on) minimizes I²R heating during extended duty cycles.	Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V vehicle networks. IC Role / Device Role / Timing Role: Low-side switch operating at 100–300 kHz with 4.5 V gate drive from isolated gate driver IC. Use Value: 1.9 mΩ R_DS(on) at 4.5 V reduces conduction loss by >15 % vs. legacy 2.5 mΩ parts, improving conversion efficiency above 96 % at 5 kW.
Electric Power Steering (EPS) Motor Inverter	On-Board Charger (OBC) Input Stage
Use Scenario: Half-bridge leg in 3-phase inverter driving 1–3 kW brushless motor in steering assist module. IC Role / Device Role / Timing Role: High-current phase-leg switch handling 120 A peak phase current with <25 ns rise/fall times. Use Value: 0.4 °C/W R_thJC allows direct heatsink mounting, maintaining T_J < 150 °C even at 100 % duty cycle in sealed EPS housing.	Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC front-end, switching at 65–100 kHz with 400 V DC link. IC Role / Device Role / Timing Role: Fast-switching, low-Q_gd MOSFET minimizing turn-off losses and EMI generation in continuous conduction mode. Use Value: Q_gd = 12–19 nC and C_iss = 13.6–17.1 nF enable clean zero-voltage switching transitions with minimal gate drive power.

Engine Control Unit (ECU) High-Side Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: Switching 12 V battery rail to fuel injector or ignition coil loads with PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: High-side power switch controlling inductive load current; handles repetitive UIS events during coil de-energization.

Use Value: 175 °C rating and AEC-Q101 qualification ensure reliability in under-hood environments; 1.6 mΩ R_DS(on) minimizes I²R heating during extended duty cycles.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 12 V and 48 V vehicle networks.

IC Role / Device Role / Timing Role: Low-side switch operating at 100–300 kHz with 4.5 V gate drive from isolated gate driver IC.

Use Value: 1.9 mΩ R_DS(on) at 4.5 V reduces conduction loss by >15 % vs. legacy 2.5 mΩ parts, improving conversion efficiency above 96 % at 5 kW.

Electric Power Steering (EPS) Motor Inverter

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in 3-phase inverter driving 1–3 kW brushless motor in steering assist module.

IC Role / Device Role / Timing Role: High-current phase-leg switch handling 120 A peak phase current with <25 ns rise/fall times.

Use Value: 0.4 °C/W R_thJC allows direct heatsink mounting, maintaining T_J < 150 °C even at 100 % duty cycle in sealed EPS housing.

Use Scenario: AC-DC PFC boost switch in 6.6 kW OBC front-end, switching at 65–100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching, low-Q_gd MOSFET minimizing turn-off losses and EMI generation in continuous conduction mode.

Use Value: Q_gd = 12–19 nC and C_iss = 13.6–17.1 nF enable clean zero-voltage switching transitions with minimal gate drive power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; TO-220 package; no AEC-Q101 qualification	Limited to industrial/non-automotive use; higher conduction loss increases thermal load in same PCB area	Choose only for cost-sensitive non-automotive designs where 175 °C operation and automotive qualification are not required
STL220N4F7AG	R_DS(on) = 1.45 mΩ @ 10 V; 40 V; AEC-Q101 qualified; PowerFLAT 5x6 package	Surface-mount only; lower thermal mass limits peak pulse current; R_thJC = 1.2 °C/W vs. 0.4 °C/W	Select when board space is constrained and heatsinking is via PCB copper; avoid for >100 A continuous or high-energy avalanche scenarios

Compared with IRFB4115PBF and STL220N4F7AG, SQM40010EL_GE3 delivers superior thermal performance (0.4 °C/W), automotive qualification, and proven 320 mJ avalanche energy handling-making it the preferred choice for high-reliability, high-power automotive power stages where thermal margin and ruggedness are critical.

Availability

SQM40010EL_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering inverters requiring stable component supply across multi-year automotive production programs.

Supply support for SQM40010EL_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM40010EL_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation vehicle electrification systems.

FAQ

What is the maximum continuous drain current rating for SQM40010EL_GE3 at 125 °C case temperature?

The SQM40010EL_GE3 maintains a continuous drain current rating of 120 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on) stability over temperature-critical for sustained operation in engine bay environments where ambient temperatures exceed 100 °C.

Is SQM40010EL_GE3 suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes, SQM40010EL_GE3 is well-suited for synchronous rectification in 48 V automotive DC-DC converters. Its R_DS(on) of 1.9 mΩ at V_GS = 4.5 V ensures full enhancement with standard 5 V gate drivers, while its 175 °C junction rating and AEC-Q101 qualification support long-term reliability in thermally demanding converter topologies.

Does SQM40010EL_GE3 have an integrated Schottky body diode?

No, SQM40010EL_GE3 uses a standard silicon body diode-not a Schottky. Its forward voltage V_SD is 0.85–1.5 V at I_F = 70 A and V_GS = 0 V, with reverse recovery characteristics typical of planar trench MOSFETs. For ultra-low V_F requirements, external Schottky or SiC diodes should be considered in anti-parallel configuration.

What is the gate threshold voltage range for SQM40010EL_GE3, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for SQM40010EL_GE3 is 1.5–2.5 V (typ. 2.0 V) at I_D = 250 μA. This low threshold ensures reliable turn-on with 3.3 V or 5 V logic-level drivers, but system designers must ensure gate drive voltage reaches ≥4.5 V to achieve the specified 1.9 mΩ R_DS(on) and avoid linear-mode operation during high-current switching.

How is the drain tab of SQM40010EL_GE3 electrically configured, and what layout guidance applies?

The drain tab of SQM40010EL_GE3 is electrically connected to the Drain (D) pin and serves as the primary thermal and current-carrying path. Layout best practice requires soldering the entire tab to a ≥1"² 2 oz. copper thermal pad on the PCB, with thermal vias to inner ground/power planes-ensuring R_thJA remains near 40 °C/W and preventing localized overheating during 120 A operation.

SQM40010EL_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 17100 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM40010EL_GE3 FAQ

1.How can I place an order for SQM40010EL_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM40010EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM40010EL_GE3 reliable?

The price and inventory of SQM40010EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40010EL_GE3 is usually 5 days.

3.What payment methods are accepted for SQM40010EL_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40010EL_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM40010EL_GE3?

SQM40010EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM40010EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM40010EL_GE3?

For technical support, including SQM40010EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40010EL_GE3 requirements.

6.How does Aetrix verify that SQM40010EL_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM40010EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40010EL_GE3 meets industry standards.

7.What is the process for return or replacement of SQM40010EL_GE3?

All SQM40010EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40010EL_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM40010EL_GE3 part is unused and in its original packaging.

Return procedure for SQM40010EL_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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