Vishay Siliconix SQM40014EM_GE3

Overview

SQM40014EM_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 200 A continuous drain current at TC = 25 °C, and 0.00100 Ω RDS(on) at VGS = 10 V and ID = 35 A - deployed in high-current DC-DC converters and 48 V battery disconnect circuits.

For engineers reviewing the SQM40014EM_GE3 datasheet, SQM40014EM_GE3 pinout, SQM40014EM_GE3 application, or SQM40014EM_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C maximum junction temperature, TO-263-7L package with low RthJC (0.4 °C/W), and 100 % Rg and UIS tested reliability.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive subsystems. Its gate charge profile (Qg = 158–250 nC, Qgd = 22 nC) supports efficient operation in synchronous rectification and motor phase control at frequencies up to 100 kHz.

The device integrates a robust body diode with trr = 165–350 ns and Qrr = 530–1100 nC, enabling reliable freewheeling in inductive loads without external Schottky supplementation. Thermal design is anchored by a junction-to-case resistance of 0.4 °C/W and a 1"×1" FR4 PCB thermal resistance of 40 °C/W.

Key Specifications

Pinout & Package

Package: TO-263-7L (D2PAK-7), surface-mount with exposed drain tab for thermal and electrical connection. Seven terminals arranged in G-D-S-G-D-S-D configuration (top view).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N4F7AG and IRF1407ZPbF, SQM40014EM_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, ultra-low RDS(on), and TO-263-7L thermal performance - making it the only option suitable for production automotive 48 V power switching where reliability, efficiency, and thermal headroom are jointly constrained.

Availability

SQM40014EM_GE3 is available at Aetrix Electronics and suitable for automotive battery management, 48 V DC-DC conversion, and electric power steering systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQM40014EM_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM40014EM_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature 12 V/48 V dual-battery architectures and functional-safety compliant power systems.

FAQ

What is the maximum continuous drain current rating for SQM40014EM_GE3 at 125 °C case temperature?

The SQM40014EM_GE3 maintains a continuous drain current rating of 200 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and stable RDS(on) behavior up to 175 °C junction temperature - enabling sustained high-current operation in thermally constrained automotive modules without derating.

Is SQM40014EM_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQM40014EM_GE3 is fully AEC-Q101 qualified. This includes stress tests such as high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD) per human-body model (HBM) and machine model (MM). The qualification confirms suitability for automotive power electronics subject to harsh environmental and reliability requirements.

What is the typical total gate charge (Qg) of SQM40014EM_GE3, and how does it affect gate driver selection?

The SQM40014EM_GE3 has a typical total gate charge (Qg) of 158 nC at VGS = 10 V, VDS = 20 V, and ID = 100 A. This value directly determines gate driver peak current requirements: for 50 ns rise time, a driver capable of ≥3.2 A peak output is recommended. The low Qgd (22 nC) also reduces Miller-induced switching instability in high-dV/dt environments.

Does SQM40014EM_GE3 include an integrated body diode, and what are its key recovery characteristics?

Yes, SQM40014EM_GE3 features an integral body diode with forward voltage VSD = 0.81–1.5 V at IF = 60 A and VGS = 0 V. Its reverse recovery time (trr) is 165–350 ns, and reverse recovery charge (Qrr) is 530–1100 nC - measured at IF = 30 A and di/dt = 100 A/μs. These values support efficient freewheeling in hard-switched topologies without external diode supplementation.

What is the thermal resistance from junction to case (RthJC) for SQM40014EM_GE3, and how should it be used in thermal design?

The SQM40014EM_GE3 has a junction-to-case thermal resistance (RthJC) of 0.4 °C/W, measured from die junction to the exposed drain tab. In thermal design, this value must be combined with heatsink thermal resistance (RthSA) and interface material resistance (RthTIM) to calculate total junction-to-ambient resistance. For example, with RthSA = 0.5 °C/W and RthTIM = 0.1 °C/W, maximum continuous power at TJ = 175 °C and TA = 85 °C is ~250 W.