Vishay Siliconix SQM40016EM_GE3

Overview

SQM40016EM_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 250 A continuous drain current at TC = 25 °C, and 0.00100 Ω RDS(on) at VGS = 10 V. It features AEC-Q101 qualification, 175 °C maximum junction temperature, and TO-263-7L package with low thermal resistance (RthJC = 0.5 °C/W), designed for high-current DC/DC converters and motor control in electric power steering systems.

For engineers reviewing the SQM40016EM_GE3 datasheet, SQM40016EM_GE3 pinout, SQM40016EM_GE3 application, or SQM40016EM_GE3 equivalent, key selection criteria include its 40 V rating, sub-1 mΩ on-resistance at 10 V gate drive, 100% UIS testing, AEC-Q101 compliance, and thermal performance under sustained 229 A operation at 125 °C case temperature.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency automotive power stages. Its dual source-sense (SS) terminals enable Kelvin-source sensing to eliminate PCB trace resistance error in current monitoring and closed-loop control.

The device integrates a robust body diode with 92–185 ns reverse recovery time and 198–400 nC Qrr, supporting synchronous rectification and freewheeling in hard-switched topologies. Gate charge parameters (Qg = 163–245 nC, Qgd = 36 nC) support efficient 100 A switching at 20 V VDS with 24–40 ns turn-on delay and 35–55 ns fall time.

Key Specifications

Pinout & Package

Package: TO-263-7L (D2PAK-7), surface-mount with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc #63782: 10.668 mm × 16.129 mm footprint, 4.826 mm max height, 14.605–15.875 mm lead length.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with IRFB4115PBF and STL220N4F7AG, SQM40016EM_GE3 uniquely combines AEC-Q101 qualification, dual Kelvin source, and 0.5 °C/W thermal resistance - making it optimal for high-reliability, high-accuracy automotive power stages where layout space and thermal headroom are constrained.

Availability

SQM40016EM_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild-hybrid DC/DC converters, and onboard charger applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for SQM40016EM_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

SQM40016EM_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature traction and auxiliary power systems in next-generation EVs and ADAS platforms.

FAQ

What is the maximum continuous drain current rating for SQM40016EM_GE3 at 125 °C case temperature?

The SQM40016EM_GE3 supports 229 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations at elevated temperatures and is validated under AEC-Q101 test conditions. Designers must ensure heatsinking maintains TC ≤ 125 °C to sustain this current in automotive applications such as EPS or HVAC blowers.

Does SQM40016EM_GE3 include Kelvin source connections, and how are they used?

Yes, SQM40016EM_GE3 features two dedicated Source Sense (SS) terminals in its TO-263-7L package. These Kelvin connections provide a low-impedance, noise-immune path to the true source potential, enabling accurate current sensing without voltage drop errors from high-current PCB traces. They are essential for torque control in BLDC motor drives and overcurrent protection in safety-critical automotive systems.

Is SQM40016EM_GE3 qualified to AEC-Q101, and what does that entail for automotive use?

Yes, SQM40016EM_GE3 is fully AEC-Q101 qualified. This certification confirms successful completion of stress tests including high-temperature reverse bias, temperature cycling, and unclamped inductive switching - all performed across the full -55 °C to +175 °C operating range. It authorizes use in passenger car powertrain and chassis systems where functional safety and long-term reliability are mandatory.

What is the typical total gate charge (Qg) of SQM40016EM_GE3, and why does it matter for switching performance?

The SQM40016EM_GE3 has a typical total gate charge (Qg) of 163 nC at VGS = 10 V, VDS = 20 V, and ID = 100 A. This parameter directly determines driver power loss and switching speed: lower Qg enables faster turn-on/turn-off with reduced gate driver sizing and EMI. Its Qgd/Qg ratio of ~22 % also enhances Miller immunity, supporting stable operation in high-dV/dt motor drive environments.

How does the thermal resistance RthJC of SQM40016EM_GE3 impact heatsink design?

SQM40016EM_GE3 has a junction-to-case thermal resistance (RthJC) of 0.5 °C/W, measured from die to the exposed drain tab. This exceptionally low value means only 0.5 °C temperature rise occurs across the silicon-to-heatsink interface per watt dissipated - allowing compact, low-mass heatsinks or direct chassis mounting. For a 100 W loss scenario, junction temperature rises just 50 °C above case temperature, easing thermal design in space-constrained automotive modules.