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Vishay Siliconix SQM40020E_GE3
- Part No.:
- SQM40020E_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM40020E_GE3.pdf
- Description:
- MOSFET N-CH 40V 100A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:9,786
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Product details
Overview
SQM40020E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 100 A continuous drain current at TC = 25 °C, and RDS(on) of 2.33 mΩ at VGS = 10 V and ID = 20 A. It operates up to +175 °C junction temperature and is housed in a TO-263 (D2PAK) package with low thermal resistance (RthJC = 1 °C/W), making it suitable for high-current DC motor drives and battery disconnect circuits in under-hood automotive systems.
For engineers reviewing the SQM40020E_GE3 datasheet, SQM40020E_GE3 pinout, SQM40020E_GE3 application, or SQM40020E_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100% Rg and UIS testing, robust body diode (trr = 41–85 ns, Qrr = 28–60 nC), and thermal performance on FR4 PCBs - all critical for 12 V/24 V automotive power switching designs requiring reliability at elevated temperatures.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve ultra-low RDS(on) while maintaining high avalanche energy rating (EAS = 105.8 mJ) and rugged unclamped inductive switching capability. Its gate charge profile (Qg = 84–130 nC, Qgd = 19.5 nC) supports efficient high-frequency PWM operation in synchronous rectification and load-switching topologies.
The device features tightly controlled VGS(th) (2.5–3.5 V), low gate resistance (Rg = 0.9–2.8 Ω), and stable on-resistance over temperature (RDS(on) = 4.7 mΩ max at TJ = 175 °C). Its body diode exhibits fast reverse recovery (trr ≤ 85 ns) and low forward voltage (VSD = 0.8–1.5 V at IF = 25 A), enabling reduced conduction and switching losses in bidirectional current paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - Supports 12 V/24 V automotive battery systems with margin against load-dump transients |
| RDS(on) @ VGS = 10 V | 2.33 mΩ - Enables <1 W conduction loss at 20 A, reducing heatsink requirements |
| ID (Continuous) | 100 A at TC = 25 °C - Sustains high-current loads such as starter relays or HVAC blowers without derating |
| Junction Temp Range | −55 °C to +175 °C - Qualified for under-hood placement in engine control units and transmission modules |
| RthJC | 1 °C/W - Allows direct thermal coupling to heatsink via drain tab, enabling >100 W power dissipation at TC = 125 °C |
| EAS | 105.8 mJ - Withstands repetitive inductive switching events in solenoid and motor drive applications |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTGB, HTRB, and UHAST |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Dimensions per Vishay Doc. #71198 (Version 1, thick-lead variant).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output / heat sink interface | Exposed copper tab - electrically connected to drain; must be soldered to large copper pour for thermal management |
| G (Gate) | Control input | Low-threshold MOSFET gate requiring 2.5–3.5 V turn-on; sensitive to ESD and requires gate resistor for ringing suppression |
| S (Source) | Power return / reference node | Common source node for load-side grounding; forms Kelvin sense path when used with external shunt |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 2.33 mΩ RDS(on) in TO-263 - 30% lower than planar equivalents at same voltage class |
| 100% Rg and UIS tested | Ensures gate robustness and avalanche reliability across full production lot - no screening failures in field |
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, mechanical shock, and humidity exposure per JEDEC standards |
| Low Ciss (6445–8000 pF) | Reduces gate drive power and enables faster switching in 100–500 kHz DC/DC and motor control stages |
| Body diode trr ≤ 85 ns | Minimizes reverse recovery losses during synchronous rectification or freewheeling in half-bridge configurations |
Applications
| Engine Start-Stop System | Automotive Battery Disconnect Unit |
|---|---|
Use Scenario: Controls main battery feed to vehicle ECU and infotainment during engine cranking to prevent brownout. IC Role / Device Role / Timing Role: High-side load switch managing 12 V system power sequencing with fast turn-on (<30 ns td(on)) and low RDS(on) to minimize voltage drop. Use Value: Maintains stable 11.8 V supply at 80 A load, eliminating microcontroller resets during cold-cranking events. |
Use Scenario: Isolates auxiliary battery from starter circuit during high-current cranking to protect LiFePO₄ or AGM backup systems. IC Role / Device Role / Timing Role: Bidirectional blocking switch using body diode conduction and controlled MOSFET conduction for fault-tolerant isolation. Use Value: Enables <100 μs fault response with 280 A pulsed current handling and 105.8 mJ avalanche energy absorption. |
| Electric Power Steering (EPS) Motor Driver | 12 V DC-DC Converter Primary Switch |
Use Scenario: Half-bridge high-side switch in 3-phase inverter driving brushless EPS motor at 10–20 kHz PWM. IC Role / Device Role / Timing Role: High-current, thermally robust power switch with low Qgd (19.5 nC) to reduce Miller-induced shoot-through risk. Use Value: Delivers 98.5% efficiency at 40 A output with junction temperature stabilized below 150 °C under continuous load. |
Use Scenario: Primary-side switch in 12 V input, 5 V/30 A isolated flyback or active-clamp forward converter for ADAS domain controller. IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) primary FET operating at 300 kHz with minimal switching loss (Qg = 84–130 nC). Use Value: Reduces total switching + conduction loss to <2.1 W, enabling compact transformer design and no forced airflow. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 10 V but rated only to +175 °C with no AEC-Q101 documentation in public datasheet; TO-263-3 package | Not AEC-Q101 certified - requires internal qualification for automotive deployment | Select only if AEC-Q101 compliance is not mandated and thermal margin allows for higher RDS(on) drift at 175 °C |
| IRF1404ZLPbF | Higher RDS(on) = 4.0 mΩ, lower ID = 130 A, non-automotive grade, TO-220AB package with higher RthJC (1.25 °C/W) | Lacks AEC-Q101, higher thermal resistance, and slower switching (Qg = 133 nC vs. 84–130 nC) | Acceptable for industrial 12 V power supplies where automotive qualification and thermal density are not required |
Compared with STL220N4F7AG and IRF1404ZLPbF, the SQM40020E_GE3 provides verified AEC-Q101 qualification, lowest thermal resistance (1 °C/W), and tighter RDS(on) distribution - making it the preferred choice for space-constrained, high-reliability automotive power stages where junction temperature stability and transient immunity are design-critical.
Availability
SQM40020E_GE3 is available at Aetrix Electronics and suitable for automotive battery management, electric power steering, and engine control unit applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier-1 OEM programs.
Supply support for SQM40020E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing markets.
The SQM40020E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V/24 V vehicle subsystems where reliability under thermal and electrical stress is non-negotiable.
FAQ
What is the maximum continuous drain current rating for SQM40020E_GE3 at 125 °C case temperature?
The SQM40020E_GE3 maintains a continuous drain current rating of 100 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RthJC of 1 °C/W, allowing sustained high-current operation without derating in properly heatsinked automotive applications.
Is SQM40020E_GE3 pin-compatible with other TO-263 N-channel MOSFETs like the SQM40030E?
No - SQM40020E_GE3 is not pin-compatible with SQM40030E. While both use TO-263 packages, the SQM40030E has different RDS(on) (3.0 mΩ), gate charge (Qg = 100–150 nC), and thermal characteristics. Pinout is identical (G-D-S), but electrical behavior and layout optimization differ significantly; PCB redesign is recommended for substitution.
Does SQM40020E_GE3 include integrated ESD protection on the gate terminal?
The SQM40020E_GE3 does not feature integrated gate ESD protection diodes. Its gate-source leakage (IGSS) is specified at ±100 nA, and gate withstand voltage is ±20 V - consistent with standard discrete MOSFETs. External gate protection (e.g., TVS or RC snubber) is required in noisy automotive environments per AEC-Q101 system-level recommendations.
What is the typical body diode forward voltage of SQM40020E_GE3 at 25 A and room temperature?
The typical body diode forward voltage (VSD) of SQM40020E_GE3 is 0.8 V at IF = 25 A and VGS = 0 V, with a maximum of 1.5 V. This low VSD, combined with fast trr (41–85 ns), makes the SQM40020E_GE3 well-suited for freewheeling and bidirectional current paths in half-bridge and synchronous rectifier topologies.
Can SQM40020E_GE3 be used in linear mode (as a pass element) for automotive current regulation?
The SQM40020E_GE3 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) graph shows pulse-limited capability only, and no DC SOA curve is provided. For linear regulation, dedicated lateral MOSFETs or bipolar transistors with defined SOA are recommended - SQM40020E_GE3 should be operated in saturated switching mode only.
SQM40020E_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.33mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM40020E_GE3 FAQ
1.How can I place an order for SQM40020E_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM40020E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM40020E_GE3 reliable?
The price and inventory of SQM40020E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40020E_GE3 is usually 5 days.
3.What payment methods are accepted for SQM40020E_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40020E_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM40020E_GE3?
SQM40020E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM40020E_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM40020E_GE3?
For technical support, including SQM40020E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40020E_GE3 requirements.
6.How does Aetrix verify that SQM40020E_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM40020E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40020E_GE3 meets industry standards.
7.What is the process for return or replacement of SQM40020E_GE3?
All SQM40020E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40020E_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM40020E_GE3 part is unused and in its original packaging.
Return procedure for SQM40020E_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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