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Vishay Siliconix SQM40020EL_GE3
- Part No.:
- SQM40020EL_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM40020EL_GE3.pdf
- Description:
- MOSFET N-CH 40V 100A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:794
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Product details
Overview
SQM40020EL_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V (D–S), 100 A continuous drain current at TC = 25 °C, and 175 °C maximum junction temperature, with RDS(on) of 2.2 mΩ at VGS = 10 V - used in high-efficiency DC–DC converters and motor control stages in engine management and battery systems.
For engineers reviewing the SQM40020EL_GE3 datasheet, SQM40020EL_GE3 pinout, SQM40020EL_GE3 application, or SQM40020EL_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1 °C/W), avalanche energy rating (EAS = 105.8 mJ), gate charge (Qg = 108–165 nC), body diode recovery characteristics (trr = 43–90 ns), and AEC-Q101 qualification status to support robust automotive power design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current 12 V/24 V automotive systems. Its single N-channel configuration supports high-side and low-side switching topologies with integrated body diode capable of 280 A pulsed source current and 0.8–1.5 V forward voltage at 25 A.
The device operates across –55 °C to +175 °C junction temperature range and features 100 % Rg and UIS testing per production lot. Thermal design is enabled by TO-263 package with 1 °C/W junction-to-case resistance and 40 °C/W junction-to-ambient (PCB mount), supporting high-power density layouts on FR4 boards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 40 V - supports 12 V and 24 V automotive bus systems with margin against load dump transients. |
| RDS(on) @ 10 V | 2.2 mΩ - enables <1 W conduction loss at 50 A, critical for thermally constrained under-hood modules. |
| ID Continuous | 100 A at TC = 25 °C - sustains peak motor drive or solenoid actuation currents without derating at heatsink interface. |
| EAS | 105.8 mJ - withstands inductive energy from 0.1 mH loads during unclamped inductive switching events. |
| Qg | 108–165 nC - determines gate driver power requirement and switching speed trade-off in PWM applications. |
| trr / Qrr | 43–90 ns / 31–65 nC - defines body diode reverse recovery behavior in synchronous rectification and H-bridge freewheeling. |
| RthJC | 1 °C/W - allows direct thermal path to heatsink or copper plane, enabling >100 W power dissipation with minimal ΔT. |
Pinout & Package
TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S) in standard top-view layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 4.5–10 V logic-level signal; 1.83 Ω typical gate resistance limits dV/dt-induced ringing. |
| D (Drain) | Main current input | Connected to PCB heatsink pad; carries full load current and serves as thermal interface to ambient. |
| S (Source) | Main current return | Reference node for gate drive; ties to low-side shunt or controller ground with minimal inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 2.2 mΩ RDS(on) at 10 V in TO-263, reducing conduction loss vs. planar MOSFETs in same footprint. |
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications requiring zero defect reliability over lifetime. |
| 100 % Rg and UIS tested | Ensures gate robustness and unclamped inductive switching capability per unit, eliminating field failure risk. |
| Low RthJC (1 °C/W) | Enables direct mounting to copper heatsink or thermal pad, supporting >100 W continuous operation without forced air. |
| Body diode trr ≤ 90 ns | Minimizes switching losses and EMI in synchronous rectifier and bidirectional DC–DC topologies. |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC–DC Converter |
|---|---|
Use Scenario: High-current switching for fuel injector drivers and ignition coil control in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Low-side switch handling repetitive 100 A pulses with fast turn-off to prevent coil saturation and timing drift. Use Value: 175 °C rating ensures stable operation near hot engine blocks; 105.8 mJ EAS prevents failure during coil flyback events. |
Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converters for ADAS camera modules. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–500 kHz with low Qg and fast trr for minimal dead-time loss. Use Value: 2.2 mΩ RDS(on) reduces conduction loss below 0.5 W at 30 A, improving converter efficiency above 95 %. |
| Electric Power Steering (EPS) Motor Driver | 12 V Battery Disconnect Switch |
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless EPS motor up to 1 kW. IC Role / Device Role / Timing Role: N-channel MOSFET in high- and low-side positions with matched RDS(on) and fast switching for precise torque control. Use Value: 100 % UIS-tested ruggedness handles regenerative braking spikes; 40 °C/W RthJA supports compact PCB thermal design. |
Use Scenario: Solid-state replacement for mechanical relay in battery management system main contactor function. IC Role / Device Role / Timing Role: Single-pole, high-current disconnect switch with integrated body diode for reverse polarity protection. Use Value: 280 A pulsed ID and 0.8 V VSD enable low-loss bidirectional current flow during fault isolation and load dump suppression. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 4.7 mΩ @ 10 V; TO-220 package; RthJC = 1.25 °C/W; no AEC-Q101 qualification. | Lacks automotive qualification and thermal performance; suitable only for industrial non-safety-critical use. | Select when cost sensitivity outweighs automotive compliance and thermal constraints. |
| STL220N4F7AG | RDS(on) = 1.8 mΩ @ 10 V; PowerFLAT 8x8 package; RthJC = 1.4 °C/W; AEC-Q101 qualified. | Smaller footprint but higher thermal resistance; lower ID rating (80 A); different pinout and layout requirements. | Choose for space-constrained PCBs where 80 A rating suffices and thermal margin permits 0.4 °C/W penalty. |
Compared with IRF1404ZPBF and STL220N4F7AG, SQM40020EL_GE3 uniquely balances 100 A current capability, 2.2 mΩ on-resistance, 1 °C/W thermal resistance, and full AEC-Q101 qualification - making it optimal for thermally demanding, safety-critical automotive power stages where reliability and power density are co-prioritized.
Availability
SQM40020EL_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC–DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier-1 OEM programs.
Supply support for SQM40020EL_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation across automotive, industrial, and computing markets.
SQM40020EL_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature engine bay and chassis applications demanding AEC-Q101 compliance and ruggedized switching performance.
FAQ
What is the maximum junction temperature rating for SQM40020EL_GE3?
The SQM40020EL_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing. This rating enables reliable operation in under-hood environments such as engine control modules and transmission control units where ambient temperatures exceed 125 °C. The SQM40020EL_GE3 maintains specified RDS(on) and switching parameters across its full –55 °C to +175 °C range.
Is SQM40020EL_GE3 qualified to AEC-Q101 standards?
Yes, SQM40020EL_GE3 is fully AEC-Q101 qualified, with test reports covering HTOL, UHAST, temperature cycling, and mechanical shock. This qualification confirms suitability for automotive powertrain and chassis applications where zero-defect reliability and long-term stability are mandatory. The SQM40020EL_GE3 datasheet explicitly states AEC-Q101 compliance in the FEATURES section.
What is the gate threshold voltage range for SQM40020EL_GE3?
The gate-source threshold voltage (VGS(th)) for SQM40020EL_GE3 is specified as 1.2 V (min), 1.7 V (typ), and 2.2 V (max) at VDS = VGS and ID = 250 μA. This low-threshold range ensures full enhancement with standard 3.3 V or 5 V logic-level gate drivers, while maintaining noise immunity in noisy automotive environments. The SQM40020EL_GE3 remains fully enhanced across its operational temperature range.
Does SQM40020EL_GE3 include avalanche energy rating data?
Yes, SQM40020EL_GE3 specifies a single-pulse avalanche energy (EAS) of 105.8 mJ at TJ = 25 °C with L = 0.1 mH. This value is measured and guaranteed per production lot, supporting robust design in inductive load switching applications like fuel injectors and solenoids. The SQM40020EL_GE3 also lists 46 A single-pulse avalanche current (IAS), confirming ruggedness beyond datasheet SOA limits.
What is the thermal resistance from junction to case (RthJC) for SQM40020EL_GE3?
The junction-to-case thermal resistance (RthJC) for SQM40020EL_GE3 is 1 °C/W, measured from die junction to the exposed drain tab surface. This low value enables efficient heat transfer to external heatsinks or large PCB copper areas, supporting >100 W continuous power dissipation when properly mounted. The SQM40020EL_GE3 achieves this via optimized die attach and TO-263 package construction.
SQM40020EL_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 165 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM40020EL_GE3 FAQ
1.How can I place an order for SQM40020EL_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM40020EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM40020EL_GE3 reliable?
The price and inventory of SQM40020EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40020EL_GE3 is usually 5 days.
3.What payment methods are accepted for SQM40020EL_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40020EL_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM40020EL_GE3?
SQM40020EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM40020EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM40020EL_GE3?
For technical support, including SQM40020EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40020EL_GE3 requirements.
6.How does Aetrix verify that SQM40020EL_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM40020EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40020EL_GE3 meets industry standards.
7.What is the process for return or replacement of SQM40020EL_GE3?
All SQM40020EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40020EL_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM40020EL_GE3 part is unused and in its original packaging.
Return procedure for SQM40020EL_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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