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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM40022E_GE3

Name: SQM40022E_GE3
Brand: Vishay Siliconix
SKU: SQM40022E_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM40022E_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM40022E_GE3.pdf

Description:: MOSFET N-CH 40V 150A TO263

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Product details

Overview

SQM40022E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 150 A continuous drain current at 25 °C, and 0.00163 Ω R_DS(on) at V_GS = 10 V. It serves as a high-current switching element in DC-DC converters, motor control inverters, and battery disconnect circuits operating up to 175 °C junction temperature.

For engineers reviewing the SQM40022E_GE3 datasheet, SQM40022E_GE3 pinout, SQM40022E_GE3 application, or SQM40022E_GE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1 °C/W), AEC-Q101 qualification status, gate charge (Q_g = 106–160 nC), body diode recovery characteristics (t_rr = 88–180 ns), and TO-263 package mechanical data - all critical for high-reliability automotive power design validation.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current 12 V/24 V automotive systems. Its 175 °C maximum junction temperature rating supports operation in engine bay and transmission control environments without derating penalties typical of commercial-grade devices.

The device features 100 % R_g and UIS (Unclamped Inductive Switching) testing per AEC-Q101, with guaranteed avalanche energy E_AS = 180 mJ and single-pulse avalanche current I_AS = 60 A. Thermal performance is anchored by a low 1 °C/W junction-to-case resistance and a 40 °C/W junction-to-ambient rating on 1"² FR4 PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V nominal automotive battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	0.00163 Ω - Enables <1 W conduction loss at 80 A, reducing heatsink requirements in high-current power stages.
I_D (continuous, T_C = 25 °C)	150 A - Supports high-power traction inverters, starter generators, and 48 V mild-hybrid DC-DC converters.
Q_g	106–160 nC - Defines gate drive energy requirement; enables efficient switching at 100 kHz with standard gate drivers.
t_r/t_f	194–300 ns / 26–40 ns - Fast edge rates minimize switching losses in hard-switched topologies like synchronous buck and half-bridge.
E_AS	180 mJ - Confirmed unclamped inductive switching robustness for motor phase-leg protection during fault conditions.
T_J max	+175 °C - Qualified for under-hood applications without thermal throttling in extended ambient conditions.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, 3-lead, thick-lead variant (facility code N or T), with drain-connected heat sink tab. Dimensions per Vishay Doc. #71198: 10.15 × 15.6 mm footprint, 4.56 mm height, 1.9–2.5 mm lead length.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; gate resistance R_g = 1.25–4.35 Ω affects switching speed and ringing suppression.
D (Drain)	High-side power node	Internally connected to heat sink tab; requires isolated thermal pad and solder mask defined for PCB thermal relief.
S (Source)	Power return / reference	Common source node for gate drive loop; low-inductance layout essential to avoid shoot-through in bridge configurations.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTGB, HTRB, TC, and UHAST - no additional qualification needed for Tier-1 programs.
TrenchFET® architecture	Delivers 23 % lower R_DS(on) vs. planar MOSFETs at same die size, enabling smaller packages or higher current density in space-constrained ECUs.
100 % R_g and UIS tested	Ensures gate integrity and avalanche ruggedness across 100 % production units - eliminates field failure risk from latent parametric defects.
Low R_thJC = 1 °C/W	Enables direct thermal coupling to heatsink or copper plane; reduces ΔT between junction and case by >50 % vs. standard TO-263 alternatives.
Body diode t_rr = 88–180 ns	Minimizes reverse recovery loss in synchronous rectification and freewheeling paths, improving efficiency in bidirectional converters.

Applications

Automotive DC-DC Converter	Electric Power Steering (EPS) Inverter
Use Scenario: 12 V to 48 V bi-directional converter in mild-hybrid vehicles managing regenerative braking and torque assist. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck-boost topology, switching at 100–200 kHz. Use Value: 0.00163 Ω R_DS(on) limits conduction loss to <1.04 W at 80 A, while 175 °C rating avoids thermal shutdown during sustained peak loads.	Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS systems. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, conducting up to 136 A pulsed source current during motor stall. Use Value: 180 mJ E_AS withstands inductive kickback during sudden phase commutation faults without avalanche failure.
12 V Battery Disconnect Switch	Onboard Charger (OBC) Input Stage
Use Scenario: Solid-state replacement for mechanical relay in battery management system isolating starter battery from auxiliary loads. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlling up to 150 A continuous load with soft-start sequencing. Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 100 % UIS testing prevents failure during load dump events.	Use Scenario: AC-DC PFC boost switch in 3.3 kW onboard charger for BEVs, operating at 65 kHz with 240 V RMS input. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost stage handling 20 A RMS input current. Use Value: 40 V V_DS rating accommodates 240 V_RMS × √2 + margin; low Q_g enables ZVS-compatible gate drive with minimal driver loss.

Automotive DC-DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: 12 V to 48 V bi-directional converter in mild-hybrid vehicles managing regenerative braking and torque assist.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck-boost topology, switching at 100–200 kHz.

Use Value: 0.00163 Ω R_DS(on) limits conduction loss to <1.04 W at 80 A, while 175 °C rating avoids thermal shutdown during sustained peak loads.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, conducting up to 136 A pulsed source current during motor stall.

Use Value: 180 mJ E_AS withstands inductive kickback during sudden phase commutation faults without avalanche failure.

12 V Battery Disconnect Switch

Onboard Charger (OBC) Input Stage

Use Scenario: Solid-state replacement for mechanical relay in battery management system isolating starter battery from auxiliary loads.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch controlling up to 150 A continuous load with soft-start sequencing.

Use Value: AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime; 100 % UIS testing prevents failure during load dump events.

Use Scenario: AC-DC PFC boost switch in 3.3 kW onboard charger for BEVs, operating at 65 kHz with 240 V RMS input.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost stage handling 20 A RMS input current.

Use Value: 40 V V_DS rating accommodates 240 V_RMS × √2 + margin; low Q_g enables ZVS-compatible gate drive with minimal driver loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.00095 Ω @ 10 V (lower), but only rated to 150 °C TJ and not AEC-Q101 qualified.	Not approved for automotive safety-critical modules requiring AEC-Q101; suitable for industrial UPS or telecom PSUs.	Select STL220N4F7AG only when junction temperature stays ≤150 °C and automotive qualification is not required.
IRFB4115PBF	R_DS(on) = 0.0032 Ω @ 10 V (nearly 2× higher), TO-220 package, R_thJC = 0.75 °C/W, AEC-Q101 not claimed.	Larger thermal footprint and higher conduction loss limit use to lower-current (<80 A) or non-automotive applications.	Choose IRFB4115PBF only if TO-220 mounting is mandatory and 175 °C operation is unnecessary.

Compared with STL220N4F7AG and IRFB4115PBF, SQM40022E_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and sub-2 mΩ R_DS(on) in TO-263 - making it the only option for high-current, high-temperature automotive power stages where both reliability and efficiency are non-negotiable.

Availability

SQM40022E_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, electric power steering, and battery disconnect systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQM40022E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM40022E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control units, ADAS power supplies, and electrified powertrain subsystems.

FAQ

What is the maximum junction temperature rating for SQM40022E_GE3?

The SQM40022E_GE3 is rated for a maximum junction temperature of +175 °C and is AEC-Q101 qualified for automotive use. This allows uninterrupted operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains T_J ≤ 175 °C. The SQM40022E_GE3 datasheet specifies derating curves for continuous current versus case temperature, confirming 125 A capability at T_C = 125 °C.

Is SQM40022E_GE3 pin-compatible with other TO-263 N-channel MOSFETs?

SQM40022E_GE3 uses the standard 3-lead TO-263 (D2PAK) outline with G-D-S pinout as shown in the top-view diagram. While mechanical footprint matches industry-standard TO-263, electrical compatibility depends on R_DS(on), Q_g, and SOA - SQM40022E_GE3 is not a drop-in replacement for devices with different gate threshold or thermal resistance. Always verify layout clearance for its thick-lead variant and drain-tab thermal pad.

Does SQM40022E_GE3 include integrated ESD protection?

The SQM40022E_GE3 does not feature integrated ESD protection circuitry. Its gate oxide is rated for ±20 V V_GS, and ESD robustness is limited to human-body model (HBM) level per AEC-Q101 - typically 2 kV. System-level ESD protection (e.g., TVS diodes on gate traces) is recommended in automotive PCB designs where gate lines route outside shielded enclosures.

What is the body diode forward voltage of SQM40022E_GE3 at 60 A?

At I_F = 60 A and V_GS = 0 V, the body diode forward voltage (V_SD) of SQM40022E_GE3 is specified as 0.83–1.5 V. This range reflects variation across temperature and unit-to-unit process spread. At T_J = 125 °C, V_SD drops to ~0.7 V, supporting efficient freewheeling in synchronous rectifier applications without external Schottky diodes.

How is the avalanche capability of SQM40022E_GE3 validated?

SQM40022E_GE3 undergoes 100 % Unclamped Inductive Switching (UIS) testing per AEC-Q101 Rev. E. Each unit is stressed with L = 0.1 mH, I_AS = 60 A, and E_AS = 180 mJ pulses - confirming single-pulse avalanche ruggedness without parameter shift. This validation ensures reliable operation during inductive turn-off events in motor drives and solenoid controls where snubberless design is preferred.

SQM40022E_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.63mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 160 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM40022E_GE3 FAQ

1.How can I place an order for SQM40022E_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM40022E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM40022E_GE3 reliable?

The price and inventory of SQM40022E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40022E_GE3 is usually 5 days.

3.What payment methods are accepted for SQM40022E_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40022E_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM40022E_GE3?

SQM40022E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM40022E_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM40022E_GE3?

For technical support, including SQM40022E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40022E_GE3 requirements.

6.How does Aetrix verify that SQM40022E_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM40022E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40022E_GE3 meets industry standards.

7.What is the process for return or replacement of SQM40022E_GE3?

All SQM40022E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40022E_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM40022E_GE3 part is unused and in its original packaging.

Return procedure for SQM40022E_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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