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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM40041EL_GE3

Name: SQM40041EL_GE3
Brand: Vishay Siliconix
SKU: SQM40041EL_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM40041EL_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM40041EL_GE3.pdf

Description:: MOSFET P-CH 40V 120A TO263

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Product details

Overview

SQM40041EL_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current, high-temperature switching in power rails and load management circuits. It delivers -120 A continuous drain current at 25 °C, features R_DS(on) of 3.4 mΩ at V_GS = -10 V, and operates up to +175 °C junction temperature - enabling use in engine control units, battery disconnect switches, and 12 V/24 V commercial vehicle power distribution.

For engineers reviewing the SQM40041EL_GE3 datasheet, SQM40041EL_GE3 pinout, SQM40041EL_GE3 application, or SQM40041EL_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on) at -4.5 V gate drive (4.8 mΩ), 100 % R_g and UIS tested reliability, TO-263 package thermal performance (R_thJC = 0.95 °C/W), and body diode recovery characteristics (t_rr = 33–70 ns).

Technical Context

This P-channel MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and fast switching with minimal gate charge (Q_g = 288–450 nC). Its negative threshold voltage range (-1.5 V to -2.5 V) ensures robust turn-on under low-voltage battery conditions common in automotive stop-start systems.

The device integrates a co-packaged body diode with V_SD = -0.85 to -1.5 V at -50 A and Q_rr = 29–60 nC, supporting synchronous rectification and reverse polarity protection without external diodes. Thermal design is enabled by its low junction-to-case resistance and validated safe operating area up to 10 s pulse width at 100 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection
R_DS(on) @ V_GS = -10 V	3.4 mΩ - Enables <1 W conduction loss at 60 A, critical for high-efficiency power distribution
R_DS(on) @ V_GS = -4.5 V	4.8 mΩ - Ensures reliable turn-on during cold-crank (6–8 V battery) conditions
I_D (continuous)	-120 A @ T_C = 25 °C - Supports high-power loads such as HVAC blowers and starter relays
T_J max	+175 °C - Qualified for under-hood applications including transmission control modules
Q_g	288–450 nC - Determines gate driver sizing and switching loss in PWM-controlled DC-DC stages
t_rr	33–70 ns - Limits reverse recovery losses in bidirectional power transfer and regenerative braking interfaces

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, thermally enhanced with exposed drain tab. Dimensions per Vishay Doc. #71198 (Version 1, Facility Code T): 10.0 mm × 15.8 mm × 4.8 mm, 3-lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed copper tab electrically connected to drain; must be soldered to PCB copper pour for thermal and electrical integrity
Source	Reference node for gate drive and current return	Connected to system ground or battery negative; defines V_GS reference for P-channel operation
Gate	Control input for channel conduction	Requires negative voltage relative to source to turn on; low R_g (1.3–4 Ω) enables fast edge rates with minimal ringing

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive electronics per stress test requirements - supports PPAP and functional safety documentation
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in motor drive transients
Low R_thJC = 0.95 °C/W	Enables >100 W power dissipation with ≤100 °C temperature rise above case - reduces need for external heatsinks
TrenchFET® architecture	Delivers 20 % lower R_DS(on) vs. planar P-MOSFETs at same die size - improves power density in space-constrained ECUs
Body diode t_rr = 33 ns (typ.)	Reduces switching losses in bidirectional topologies like active battery balancing and regenerative braking circuits

Applications

Engine Control Unit (ECU) Power Switching	Commercial Vehicle Battery Disconnect
Use Scenario: High-side power switch controlling fuel injector drivers and ignition coils in diesel engine ECUs. IC Role / Device Role / Timing Role: P-channel high-side switch managing 12 V supply to critical actuators during cranking and run modes. Use Value: Low R_DS(on) minimizes voltage drop across switch during cold-crank (6.5 V min), ensuring actuator solenoids receive sufficient hold-in voltage.	Use Scenario: Isolation switch between starter battery and auxiliary loads (e.g., refrigeration units) in Class 8 trucks. IC Role / Device Role / Timing Role: Bidirectional load switch enabling automatic disconnection during deep discharge or fault events. Use Value: AEC-Q101 qualification and 175 °C rating ensure reliable operation in under-bumper mounting locations exposed to extreme ambient heat.
12 V/48 V Mild Hybrid DC-DC Interface	Reverse Polarity Protection Module
Use Scenario: Synchronous rectifier in bidirectional buck-boost converter linking 12 V and 48 V domains in 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: P-channel MOSFET used in low-side synchronous rectification with controlled body diode commutation. Use Value: Fast t_rr (33 ns typ.) and low Q_rr reduce reverse recovery losses, improving conversion efficiency above 95 % at 5 kW.	Use Scenario: Input protection circuit preventing damage from accidental reverse battery connection in telematics and ADAS modules. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement with zero forward voltage drop. Use Value: R_DS(on) = 4.8 mΩ at -4.5 V ensures <240 mV drop at 50 A - eliminates heat generation versus Schottky solutions.

Engine Control Unit (ECU) Power Switching

Commercial Vehicle Battery Disconnect

Use Scenario: High-side power switch controlling fuel injector drivers and ignition coils in diesel engine ECUs.

IC Role / Device Role / Timing Role: P-channel high-side switch managing 12 V supply to critical actuators during cranking and run modes.

Use Value: Low R_DS(on) minimizes voltage drop across switch during cold-crank (6.5 V min), ensuring actuator solenoids receive sufficient hold-in voltage.

Use Scenario: Isolation switch between starter battery and auxiliary loads (e.g., refrigeration units) in Class 8 trucks.

IC Role / Device Role / Timing Role: Bidirectional load switch enabling automatic disconnection during deep discharge or fault events.

Use Value: AEC-Q101 qualification and 175 °C rating ensure reliable operation in under-bumper mounting locations exposed to extreme ambient heat.

12 V/48 V Mild Hybrid DC-DC Interface

Reverse Polarity Protection Module

Use Scenario: Synchronous rectifier in bidirectional buck-boost converter linking 12 V and 48 V domains in 48 V mild hybrid architectures.

IC Role / Device Role / Timing Role: P-channel MOSFET used in low-side synchronous rectification with controlled body diode commutation.

Use Value: Fast t_rr (33 ns typ.) and low Q_rr reduce reverse recovery losses, improving conversion efficiency above 95 % at 5 kW.

Use Scenario: Input protection circuit preventing damage from accidental reverse battery connection in telematics and ADAS modules.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement with zero forward voltage drop.

Use Value: R_DS(on) = 4.8 mΩ at -4.5 V ensures <240 mV drop at 50 A - eliminates heat generation versus Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 20 mΩ @ -10 V; TO-220 package; no AEC-Q101 qualification	Limited to non-automotive industrial power supplies due to lack of automotive qualification and higher R_DS(on)	Select only for cost-sensitive, non-automotive designs where thermal margin allows higher conduction loss
STP40PF55	R_DS(on) = 12 mΩ @ -10 V; TO-220FP package; AEC-Q101 qualified but rated only to 150 °C T_J	Suitable for cabin electronics but not under-hood ECU use due to lower max junction temperature	Prefer when footprint constraints allow TO-220FP and operating temperature stays below 150 °C

Compared with IRF4905PbF and STP40PF55, SQM40041EL_GE3 provides superior thermal capability (+175 °C), lowest R_DS(on), and TO-263 packaging optimized for high-current PCB thermal management - making it the only option qualified for demanding under-hood automotive power switching.

Availability

SQM40041EL_GE3 is available at Aetrix Electronics and suitable for engine control units, commercial vehicle battery management systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive production lifecycles.

Supply support for SQM40041EL_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM40041EL_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for high-current, high-temperature power switching in harsh automotive environments - emphasizing AEC-Q101 compliance, thermal robustness, and transient survivability.

FAQ

What is the maximum continuous drain current rating for SQM40041EL_GE3 at 125 °C case temperature?

The SQM40041EL_GE3 supports -90 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and ensures reliable operation in high-ambient under-hood environments. The SQM40041EL_GE3 maintains R_DS(on) = 5.2 mΩ at this condition when V_GS = -10 V and I_D = -25 A, confirming stable conduction performance across its full automotive temperature range.

Is SQM40041EL_GE3 suitable for reverse polarity protection in 24 V commercial vehicle systems?

Yes, SQM40041EL_GE3 is well-suited for reverse polarity protection in 24 V systems due to its -40 V V_DS rating, low R_DS(on) of 4.8 mΩ at -4.5 V gate drive, and AEC-Q101 qualification. When configured as a high-side switch with gate tied to battery positive via resistor divider, the SQM40041EL_GE3 blocks reverse current while introducing minimal forward voltage drop (<240 mV at 50 A), eliminating heat sink requirements typical of Schottky diodes. Its 175 °C rating ensures reliability in trailer-mounted electronics exposed to ambient temperatures exceeding 85 °C.

Does SQM40041EL_GE3 have integrated avalanche energy rating, and what is its value?

Yes, SQM40041EL_GE3 is rated for single-pulse avalanche energy (E_AS) of 130 mJ, measured with L = 0.1 mH. This specification confirms its ability to absorb inductive switching energy without failure - critical in automotive applications like solenoid and relay driving where unclamped inductive kickback is common. The device also specifies single-pulse avalanche current (I_AS) of -51 A, validating robustness against transient overvoltage events encountered in engine control and chassis electronics.

What is the gate threshold voltage range for SQM40041EL_GE3, and how does it impact low-voltage operation?

The gate-source threshold voltage (V_GS(th)) for SQM40041EL_GE3 is specified from -1.5 V to -2.5 V at I_D = -250 μA. This relatively low magnitude ensures strong channel enhancement even during automotive cold-crank conditions (battery voltage as low as 6 V), where gate drive may be limited to -4.5 V relative to source. The tight V_GS(th) distribution supports consistent turn-on timing across temperature and unit variance, reducing risk of shoot-through in half-bridge configurations using complementary P/N-FET pairs.

How is thermal performance characterized for SQM40041EL_GE3, and what is its junction-to-case thermal resistance?

SQM40041EL_GE3 has a junction-to-case (drain) thermal resistance (R_thJC) of 0.95 °C/W, measured under standard test conditions. This low value enables efficient heat transfer from the silicon die to the PCB copper pour via the exposed drain tab. When mounted on a 1" square FR4 PCB with 2 oz. copper on both sides, its junction-to-ambient resistance (R_thJA) is 40 °C/W - allowing up to 157 W power dissipation at T_C = 25 °C. These values are validated per JEDEC standards and documented in Vishay's thermal transient impedance curves.

SQM40041EL_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 450 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 23600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 157W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM40041EL_GE3 FAQ

1.How can I place an order for SQM40041EL_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM40041EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM40041EL_GE3 reliable?

The price and inventory of SQM40041EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40041EL_GE3 is usually 5 days.

3.What payment methods are accepted for SQM40041EL_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40041EL_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM40041EL_GE3?

SQM40041EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM40041EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM40041EL_GE3?

For technical support, including SQM40041EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40041EL_GE3 requirements.

6.How does Aetrix verify that SQM40041EL_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM40041EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40041EL_GE3 meets industry standards.

7.What is the process for return or replacement of SQM40041EL_GE3?

All SQM40041EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40041EL_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM40041EL_GE3 part is unused and in its original packaging.

Return procedure for SQM40041EL_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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