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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM40081EL_GE3

Name: SQM40081EL_GE3
Brand: Vishay Siliconix
SKU: SQM40081EL_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM40081EL_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM40081EL_GE3.pdf

Description:: MOSFET P-CH 40V 50A TO263

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Inventory:1,700

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Product details

Overview

SQM40081EL_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current, high-temperature switching in power distribution and load control circuits. It features -40 V V_DS, 0.0085 Ω R_DS(on) at V_GS = -10 V, -50 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification - enabling use in 12 V/24 V automotive body electronics such as seat motor drivers and HVAC actuators.

For engineers reviewing the SQM40081EL_GE3 datasheet, SQM40081EL_GE3 pinout, SQM40081EL_GE3 application, or SQM40081EL_GE3 equivalent, key selection considerations include its TO-263 (D2PAK) thermal performance (R_thJC = 1.4 °C/W), -175 °C maximum junction temperature rating, avalanche energy capability (E_AS = 61 mJ), and gate charge profile (Q_g = 153–230 nC) for optimized PWM efficiency in high-side switch topologies.

Technical Context

This P-channel MOSFET operates as a high-side switch in automotive DC power rails, leveraging trench-based silicon architecture to achieve low on-resistance and robust UIS (unclamped inductive switching) performance. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level controllers when used with appropriate level-shifting or gate drive circuitry.

The device integrates a fast-recovery body diode (t_rr = 56–120 ns, Q_rr = 83–170 nC) and supports pulsed drain currents up to -200 A, making it suitable for inductive load switching with freewheeling paths. Thermal design is enabled by its low junction-to-case resistance and compatibility with standard 1" × 1" FR4 PCB copper pads per Vishay AN826 recommendations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin
R_DS(on) @ V_GS = -10 V	0.0085 Ω - Enables <1 W conduction loss at 50 A, critical for thermally constrained modules
I_D (continuous)	-50 A @ T_C = 25 °C - Supports high-power actuator and lighting loads without forced cooling
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101 Grade 0
E_AS	61 mJ - Withstands inductive energy from solenoids and motors during controlled turn-off
Q_g	153–230 nC - Determines gate driver power requirement and switching speed trade-off in PWM designs
R_thJC	1.4 °C/W - Enables direct heatsink mounting for efficient thermal management in compact enclosures

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, 3-lead, thick-lead variant (Facility Code N), with exposed drain tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts negative gate-source voltage to turn on; requires gate driver capable of sinking current during turn-off
D (Drain)	High-side power input	Connected to battery rail; electrically and thermally tied to exposed metal tab for low-inductance, low-resistance path
S (Source)	Switched output / return path	Connects to load; defines reference for gate drive; body diode anode is at S, cathode at D

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, HTRB, and UIS stress per Rev. A test plan
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® technology	Delivers lower R_DS(on) per die area vs. planar MOSFETs, improving power density and thermal efficiency
Low R_thJC (1.4 °C/W)	Enables >75 W steady-state power dissipation with 50 °C case-to-ambient delta, reducing need for external heatsinks
Body diode t_rr < 120 ns	Minimizes reverse recovery losses and EMI in bidirectional or freewheeling configurations

Applications

Automotive Seat Motor Control	Truck HVAC Blower Driver
Use Scenario: Bidirectional DC motor control for power seat adjustment using H-bridge topology with high-side P-channel switches. IC Role / Device Role / Timing Role: High-side load switch providing battery-referenced current path; body diode enables freewheeling during PWM off-time. Use Value: Low R_DS(on) reduces heat generation in confined seat module space; 175 °C rating ensures reliability near heated elements.	Use Scenario: High-current blower fan driver in commercial vehicle HVAC systems operating across -40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: High-side power switch controlling 24 V supply to brushed DC fan motor; handles inductive kickback via integrated body diode. Use Value: 61 mJ E_AS withstands repeated motor stall events; AEC-Q101 qualification guarantees long-term field operation.
Commercial Vehicle Lighting Module	Engine Bay Power Distribution Unit
Use Scenario: Overcurrent-protected headlamp and fog lamp switching in 24 V truck platforms with CAN-controlled power management. IC Role / Device Role / Timing Role: High-side smart switch implementing load disconnect and short-circuit protection via external controller feedback. Use Value: Tight R_DS(on) tolerance (0.0070–0.0085 Ω typ/max) enables accurate current sensing; low Q_g supports fast fault response.	Use Scenario: Centralized power routing for engine control sensors, fuel injectors, and solenoid valves in diesel powertrain systems. IC Role / Device Role / Timing Role: High-reliability high-side switch managing multiple 12 V/24 V loads with diagnostic feedback capability. Use Value: 1.4 °C/W R_thJC allows integration into sealed PDUs without active cooling; -55 °C to +175 °C range covers full under-hood thermal envelope.

Automotive Seat Motor Control

Truck HVAC Blower Driver

Use Scenario: Bidirectional DC motor control for power seat adjustment using H-bridge topology with high-side P-channel switches.

IC Role / Device Role / Timing Role: High-side load switch providing battery-referenced current path; body diode enables freewheeling during PWM off-time.

Use Value: Low R_DS(on) reduces heat generation in confined seat module space; 175 °C rating ensures reliability near heated elements.

Use Scenario: High-current blower fan driver in commercial vehicle HVAC systems operating across -40 °C to +85 °C ambient.

IC Role / Device Role / Timing Role: High-side power switch controlling 24 V supply to brushed DC fan motor; handles inductive kickback via integrated body diode.

Use Value: 61 mJ E_AS withstands repeated motor stall events; AEC-Q101 qualification guarantees long-term field operation.

Commercial Vehicle Lighting Module

Engine Bay Power Distribution Unit

Use Scenario: Overcurrent-protected headlamp and fog lamp switching in 24 V truck platforms with CAN-controlled power management.

IC Role / Device Role / Timing Role: High-side smart switch implementing load disconnect and short-circuit protection via external controller feedback.

Use Value: Tight R_DS(on) tolerance (0.0070–0.0085 Ω typ/max) enables accurate current sensing; low Q_g supports fast fault response.

Use Scenario: Centralized power routing for engine control sensors, fuel injectors, and solenoid valves in diesel powertrain systems.

IC Role / Device Role / Timing Role: High-reliability high-side switch managing multiple 12 V/24 V loads with diagnostic feedback capability.

Use Value: 1.4 °C/W R_thJC allows integration into sealed PDUs without active cooling; -55 °C to +175 °C range covers full under-hood thermal envelope.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	Higher R_DS(on) (0.02 Ω @ -10 V), lower I_D (-74 A), non-AEC-Q101, TO-220 package	Lacks automotive qualification; unsuitable for safety-critical or high-temperature under-hood use	Select only for cost-sensitive non-automotive industrial loads where thermal margin is ample
STP40PF55	Same V_DS (-40 V), higher R_DS(on) (0.012 Ω), AEC-Q101 qualified, TO-220FP package	Higher thermal resistance (R_thJC ≈ 2.5 °C/W); limited to lower-power applications without heatsinking	Acceptable for lower-current (<30 A) automotive modules where board space permits TO-220FP mounting

Compared with IRF4905PbF and STP40PF55, SQM40081EL_GE3 delivers superior thermal performance and tighter R_DS(on) spec in an AEC-Q101-qualified surface-mount package - enabling smaller, cooler-running, and more reliable high-current automotive power stages.

Availability

SQM40081EL_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, commercial vehicle HVAC systems, and engine bay power distribution requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for SQM40081EL_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and automotive-grade validation.

The SQM40081EL_GE3 belongs to Vishay's TrenchFET® automotive P-channel MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V/24 V vehicle subsystems where robustness and long-term stability are mandatory.

FAQ

What is the maximum junction temperature rating for SQM40081EL_GE3?

The SQM40081EL_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 Grade 0 requirements. This rating allows deployment in under-hood environments and high-power-density modules where ambient temperatures exceed 105 °C. The SQM40081EL_GE3 maintains specified R_DS(on) and switching parameters up to this limit, with derating applied above T_C = 125 °C per datasheet curves.

Is SQM40081EL_GE3 pin-compatible with other TO-263 P-channel MOSFETs?

SQM40081EL_GE3 uses the standard 3-lead TO-263 (D2PAK) footprint with G-D-S pinout as shown in the top-view diagram. While mechanical compatibility exists with other D2PAK devices, electrical pinout must be verified individually - SQM40081EL_GE3 places Gate at lead 1, Drain (tab) at lead 2, and Source at lead 3. Always confirm layout alignment against the latest Vishay package drawing 71198 before PCB release.

Does SQM40081EL_GE3 require a gate driver for automotive microcontroller interfacing?

Yes - SQM40081EL_GE3 is a P-channel MOSFET with a negative V_GS(th) (-1.5 V to -2.5 V), so it requires active gate driving to pull the gate below source potential. Direct connection to 3.3 V or 5 V MCU GPIO is insufficient; a dedicated high-side gate driver (e.g., TC4427A, LM5113) or level-shifting circuit is necessary to ensure full enhancement and fast switching. The SQM40081EL_GE3 gate charge (153–230 nC) further mandates driver current capability ≥2 A peak.

What is the avalanche energy rating of SQM40081EL_GE3 and how is it tested?

The SQM40081EL_GE3 is rated for single-pulse avalanche energy E_AS = 61 mJ at T_J = 25 °C, measured with L = 0.1 mH, I_AS = -35 A, and V_DD = -40 V. This parameter reflects ruggedness during inductive load switching transients. Each SQM40081EL_GE3 unit undergoes 100 % UIS testing per datasheet S18-1009-Rev. A, ensuring compliance before shipment.

How does the body diode performance of SQM40081EL_GE3 compare to standard rectifiers?

The integrated body diode of SQM40081EL_GE3 exhibits forward voltage V_SD = -0.96 to -1.5 V at -50 A and reverse recovery time t_rr = 56–120 ns, significantly faster than general-purpose Schottky or PN rectifiers. This enables efficient freewheeling in H-bridge and buck-derived topologies without external diode addition. The SQM40081EL_GE3 body diode Q_rr (83–170 nC) is optimized to minimize switching losses and voltage overshoot during commutation.

SQM40081EL_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM40081EL_GE3 FAQ

1.How can I place an order for SQM40081EL_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM40081EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM40081EL_GE3 reliable?

The price and inventory of SQM40081EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40081EL_GE3 is usually 5 days.

3.What payment methods are accepted for SQM40081EL_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40081EL_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM40081EL_GE3?

SQM40081EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM40081EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM40081EL_GE3?

For technical support, including SQM40081EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40081EL_GE3 requirements.

6.How does Aetrix verify that SQM40081EL_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM40081EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40081EL_GE3 meets industry standards.

7.What is the process for return or replacement of SQM40081EL_GE3?

All SQM40081EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40081EL_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM40081EL_GE3 part is unused and in its original packaging.

Return procedure for SQM40081EL_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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