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Vishay Siliconix SQM40N10-30_GE3
- Part No.:
- SQM40N10-30_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM40N10-30_GE3.pdf
- Description:
- MOSFET N-CH 100V 40A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,166
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Product details
Overview
SQM40N10-30_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V VDS, 40 A continuous drain current at TC = 25 °C, and 30 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-263 (D2PAK) package with low thermal resistance (RthJC = 1.4 °C/W), enabling high-efficiency motor control and DC-DC conversion in under-hood automotive systems.
For engineers reviewing the SQM40N10-30_GE3 datasheet, SQM40N10-30_GE3 pinout, SQM40N10-30_GE3 application, or SQM40N10-30_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS tested reliability, 1.4 °C/W junction-to-case thermal resistance, and verified performance at 175 °C TJ - critical for engine control units, battery disconnect switches, and 48 V mild-hybrid power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate threshold voltage (2.5–3.5 V) enables robust drive compatibility with standard 5 V and 3.3 V logic controllers, while the 41 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz in synchronous buck converters.
The device integrates a body diode with 0.85–1.5 V forward voltage at 30 A and is rated for single-pulse avalanche energy of 80 mJ. Its SOA curve is defined up to 100 V and 40 A under DC and pulse conditions, with thermal limits governed by RthJA = 40 °C/W on 1"² FR4 PCB and RthJC = 1.4 °C/W to heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Withstands full 48 V system transients plus ISO 7637-2 pulse 5a (120 V surge) without breakdown. |
| RDS(on) @ VGS = 10 V | 0.030 Ω - Delivers ≤ 48 W conduction loss at 40 A, enabling compact thermal design in space-constrained ECUs. |
| ID (continuous, TC = 25 °C) | 40 A - Supports high-current loads such as fuel pump drivers and HVAC blower motors without derating. |
| TJ max | +175 °C - Certified for under-hood placement in engine compartments per AEC-Q101 stress testing. |
| Qg (total) | 41 nC - Enables <1 μs turn-on delay and 5–8 ns rise time with 1 Ω gate resistor, minimizing switching loss at 100 kHz. |
| RthJC | 1.4 °C/W - Allows direct mounting to aluminum heatsinks for >90 W power dissipation without thermal throttling. |
| VGS(th) | 2.5–3.5 V - Ensures reliable enhancement-mode turn-on across automotive supply voltage range (4.5–18 V). |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, thick-lead variant (Facility Code = T), with exposed drain tab for thermal and electrical connection to PCB heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heatsink interface | Electrically connected to internal die drain; must be soldered to large copper pour for thermal management and low-inductance return path. |
| Gate | Control input | Receives PWM signal; requires gate driver with ≥1 A peak sink/source capability due to 41 nC Qg and 1.3 Ω Rg. |
| Source | Reference node / current return | Provides ground reference for gate drive; layout must minimize inductance to prevent shoot-through during switching transitions. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use via stress tests including HTGB, HTRB, TC, UHAST, and ESD - required for powertrain and chassis modules. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures in relay-replacement applications. |
| TrenchFET® architecture | Delivers 23 mΩ typical RDS(on) at 15 A/10 V, enabling higher efficiency than planar MOSFETs in 12 V and 48 V systems. |
| Low RthJC (1.4 °C/W) | Enables >90 W continuous power dissipation with minimal ΔT between junction and heatsink - reduces need for forced air cooling. |
| Body diode with low VSD | 0.85 V typical forward voltage at 30 A ensures low reverse recovery loss in synchronous rectification and bidirectional DC-DC topologies. |
Applications
| Engine Control Unit (ECU) Power Stage | 48 V Mild-Hybrid Battery Disconnect |
|---|---|
|
Use Scenario: High-side switch controlling fuel injector or ignition coil primary winding in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch handling repetitive 10–20 A pulsed loads at 1–10 kHz, requiring fast turn-off to prevent coil saturation. Use Value: 23 ns turn-off delay and 5 ns fall time enable precise dwell control; 175 °C rating allows placement near engine block. |
Use Scenario: Bidirectional main contactor replacement in 48 V P0/P1 hybrid architectures, managing battery isolation during fault conditions. IC Role / Device Role / Timing Role: Low-RDS(on) N-channel switch used with external high-side driver and current-sense amplifier for load monitoring. Use Value: 30 mΩ RDS(on) limits on-state loss to <60 W at 45 A, reducing thermal mass vs. mechanical relays; AEC-Q101 ensures 15-year field life. |
| Automotive HVAC Blower Motor Driver | On-Board Charger (OBC) DC-Link Switch |
|
Use Scenario: Half-bridge leg in PWM-controlled 300 W HVAC blower motor in-cabin module. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position, conducting up to 40 A continuous with 100 kHz PWM. Use Value: Body diode VSD ≤ 1.5 V minimizes freewheeling loss; TO-263 thermal performance sustains 85 °C ambient without heatsink fan. |
Use Scenario: High-frequency switching element in OBC boost PFC stage operating at 65–100 kHz. IC Role / Device Role / Timing Role: Main switching transistor handling 100 V DC-link voltage and 25 A RMS current with zero-voltage switching assist. Use Value: 2676 pF Ciss and 95 pF Crss support clean gate drive; 1.4 °C/W RthJC maintains <125 °C junction temp under full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N10F7 | 100 V, 220 A, 3.2 mΩ RDS(on), PowerFLAT 8x8 package, RthJC = 0.7 °C/W | Higher current rating and lower RDS(on), but larger footprint and higher gate charge (120 nC) | Preferred for high-power OBC or traction inverter stages where board area permits and gate drive strength supports higher Qg. |
| IRF1407PbF | 100 V, 75 A, 11 mΩ RDS(on), TO-220AB package, RthJC = 2.5 °C/W, not AEC-Q101 qualified | Higher RDS(on), lower thermal performance, and no automotive qualification | Suitable only for non-automotive industrial motor drives where cost is prioritized over temperature rating and qualification. |
Compared with STL220N10F7 and IRF1407PbF, the SQM40N10-30_GE3 offers optimal balance of AEC-Q101 compliance, 40 A current capability, 30 mΩ on-resistance, and TO-263 thermal performance - making it ideal for mid-power automotive subsystems where qualification, size, and thermal margin are jointly constrained.
Availability
SQM40N10-30_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V battery management systems, and HVAC motor drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for Tier 1 OEM programs.
Supply support for SQM40N10-30_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures high-performance discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQM40N10-30_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability 12 V and 48 V vehicle electrification systems demanding AEC-Q101 qualification and extended temperature operation.
FAQ
What is the maximum continuous drain current rating for SQM40N10-30_GE3 at 125 °C case temperature?
The SQM40N10-30_GE3 has a continuous drain current rating of 22 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and ensures safe operation within the 175 °C maximum junction temperature limit. The SQM40N10-30_GE3 maintains stable RDS(on) up to this temperature, with typical value rising to 0.054 Ω at 125 °C and 15 A.
Is SQM40N10-30_GE3 qualified to AEC-Q101, and what does that mean for automotive use?
Yes, SQM40N10-30_GE3 is AEC-Q101 qualified, meaning it has passed accelerated stress tests including high-temperature gate bias, high-temperature reverse bias, temperature cycling, and unclamped inductive switching - all required for automotive power semiconductor components. This qualification confirms the SQM40N10-30_GE3 is suitable for safety-critical and mission-critical applications such as engine control, transmission control, and ADAS power supplies.
What is the typical gate threshold voltage range for SQM40N10-30_GE3, and how does it affect drive circuit design?
The SQM40N10-30_GE3 has a gate threshold voltage (VGS(th)) range of 2.5 V to 3.5 V at ID = 250 μA. This ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs, but designers must provide sufficient gate overdrive (≥8 V) to achieve the specified 30 mΩ RDS(on). The SQM40N10-30_GE3's low VGS(th) also improves noise immunity in electrically noisy automotive environments.
Does SQM40N10-30_GE3 include an integrated body diode, and what are its key characteristics?
Yes, SQM40N10-30_GE3 includes a monolithic body diode with a forward voltage (VSD) of 0.85 V typical at IF = 30 A and VGS = 0 V. Its reverse recovery charge (Qrr) is not explicitly specified, but the device is rated for unclamped inductive switching (UIS) with 80 mJ single-pulse energy - confirming robust diode ruggedness for freewheeling in inductive loads like solenoids and motors. The SQM40N10-30_GE3 body diode enables synchronous rectification without external diodes in half-bridge configurations.
What is the thermal resistance from junction to case (RthJC) for SQM40N10-30_GE3, and how should it be used in thermal design?
The SQM40N10-30_GE3 has a junction-to-case thermal resistance (RthJC) of 1.4 °C/W, measured from die junction to the drain tab surface. This value assumes direct metal-to-metal contact between the TO-263 drain tab and a heatsink or copper plane. In thermal modeling, RthJC must be combined with heatsink thermal resistance and interface material resistance to calculate total junction-to-ambient path. The SQM40N10-30_GE3's low RthJC enables >90 W continuous power dissipation when mounted to a properly sized aluminum heatsink.
SQM40N10-30_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 62 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3345 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM40N10-30_GE3 FAQ
1.How can I place an order for SQM40N10-30_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM40N10-30_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM40N10-30_GE3 reliable?
The price and inventory of SQM40N10-30_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40N10-30_GE3 is usually 5 days.
3.What payment methods are accepted for SQM40N10-30_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40N10-30_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM40N10-30_GE3?
SQM40N10-30_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM40N10-30_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM40N10-30_GE3?
For technical support, including SQM40N10-30_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40N10-30_GE3 requirements.
6.How does Aetrix verify that SQM40N10-30_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM40N10-30_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40N10-30_GE3 meets industry standards.
7.What is the process for return or replacement of SQM40N10-30_GE3?
All SQM40N10-30_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40N10-30_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM40N10-30_GE3 part is unused and in its original packaging.
Return procedure for SQM40N10-30_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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