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Vishay Siliconix SQM40N15-38_GE3
- Part No.:
- SQM40N15-38_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM40N15-38_GE3.pdf
- Description:
- MOSFET N-CH 150V 40A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:674
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Product details
Overview
SQM40N15-38_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 150 V drain-source voltage, 40 A continuous drain current at 25 °C, and 0.038 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency main switch in 48 V DC-DC converters and motor control inverters operating up to 175 °C junction temperature.
For engineers reviewing the SQM40N15-38_GE3 datasheet, SQM40N15-38_GE3 pinout, SQM40N15-38_GE3 application, or SQM40N15-38_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS tested reliability, low 0.9 °C/W junction-to-case thermal resistance, and TO-263 (D2PAK) package optimized for high-power automotive power stages.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge (Qg = 46 nC typ., Qgd = 11 nC). Its dynamic parameters-Ciss = 2710 pF, Coss = 310 pF, and Crss = 130 pF-are specified at VDS = 25 V and f = 1 MHz, enabling predictable hard-switching behavior in synchronous buck and half-bridge topologies.
The device supports robust unclamped inductive switching (UIS) with EAS = 80 mJ and IAS = 40 A, and features a source-drain diode with VSD = 0.95 V (typ.) at IF = 85 A and VGS = 0 V-critical for freewheeling paths in motor drives and regenerative braking circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage for 48 V–72 V battery systems with 2× transient margin |
| RDS(on) @ VGS = 10 V | 0.038 Ω - Enables <1.5 W conduction loss at 20 A, supporting thermally constrained PCB layouts |
| ID (continuous, TC = 25 °C) | 40 A - Sustains full-load current in high-current power stages without forced air cooling |
| TJ max | +175 °C - Qualified for under-hood automotive environments per AEC-Q101 Rev. D |
| RthJC | 0.9 °C/W - Allows direct heatsink mounting to dissipate >100 W with minimal ΔT across junction-to-case path |
| Qg | 46 nC (typ.) - Supports efficient 100–200 kHz PWM operation with moderate gate driver strength (e.g., 2 A peak) |
| EAS | 80 mJ - Withstands single-pulse inductive energy in motor phase-leg short-circuit events |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, thick-lead variant (Facility Code = T), with exposed drain tab for thermal and electrical connection to PCB copper pour or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (G) | Gate | Control terminal; requires ≤±20 V drive; 2 Ω typical gate resistance limits ringing and EMI |
| Lead 2 (D) | Drain | High-side power input; electrically and thermally connected to exposed metal tab; must be soldered to ≥1"² 2 oz Cu pad |
| Lead 3 (S) | Source | Power return/reference node; forms common source for gate drive; connects to low-side switch or ground plane |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications including engine control modules and EPS |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-no field failures due to latent parametric shift |
| TrenchFET® architecture | Delivers 25 % lower RDS(on) vs. planar MOSFETs of same die size, reducing conduction loss in space-constrained modules |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated vehicle platforms |
| Low RthJA (PCB mount) | 40 °C/W enables >50 W dissipation on standard FR-4 with 1"² double-sided 2 oz copper-no external heatsink required |
Applications
| Electric Power Steering (EPS) | 48 V DC-DC Converters |
|---|---|
|
Use Scenario: High-current H-bridge driving brushed or BLDC assist motors in steering column modules. IC Role / Device Role / Timing Role: Main high-side and low-side switching element in bidirectional motor control stage. Use Value: 175 °C rating ensures stable operation during sustained torque demand; 0.038 Ω RDS(on) minimizes heat generation in sealed enclosures. |
Use Scenario: Primary switch in synchronous buck converter stepping 48 V nominal bus down to 12 V for legacy subsystems. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 150–200 kHz with low Qg/Qgd ratio. Use Value: 46 nC total gate charge enables fast turn-on/off with minimal driver loss; 80 mJ EAS handles load dump transients. |
| Onboard Charger (OBC) Input Stage | Brake-by-Wire Actuators |
|
Use Scenario: AC-DC PFC boost switch or isolated DC-DC primary side switch in bi-directional OBC units. IC Role / Device Role / Timing Role: High-voltage, high-current switching transistor handling 150 V DC link voltage. Use Value: 150 V VDS provides 2× safety margin over 72 V max battery voltage; AEC-Q101 ensures long-term reliability in cyclic thermal stress. |
Use Scenario: Safety-critical solenoid driver in electro-hydraulic brake actuators requiring redundant switching paths. IC Role / Device Role / Timing Role: Fault-tolerant power switch with verified UIS capability and tight VGS(th) distribution (2.5–3.5 V). Use Value: 100 % UIS testing guarantees survival during coil de-energization spikes; narrow threshold spread improves parallel current sharing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N15F7AG | 150 V, 220 A, RDS(on) = 0.0025 Ω @ 10 V; TO-220FP package; higher current, lower RDS(on), but larger footprint and no AEC-Q101 certification | Targeted at industrial UPS and solar inverters-not qualified for automotive safety-critical use | Select when board space allows larger package and AEC-Q101 is not mandated; avoid in EPS or brake systems |
| IXTP40N15P | 150 V, 40 A, RDS(on) = 0.042 Ω @ 10 V; TO-220 package; non-automotive grade; no UIS or Rg screening | Used in consumer power supplies and lighting ballasts where cost dominates reliability requirements | Acceptable for non-automotive prototypes or cost-sensitive industrial designs; lacks automotive validation data |
Compared with STL220N15F7AG and IXTP40N15P, the SQM40N15-38_GE3 uniquely combines AEC-Q101 qualification, 0.038 Ω RDS(on), and TO-263 thermal performance-making it the only drop-in option for production automotive power stages requiring both reliability and compact layout.
Availability
SQM40N15-38_GE3 is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V DC-DC conversion, and brake-by-wire actuator designs requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for SQM40N15-38_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM40N15-38_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature power switching in safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQM40N15-38_GE3 at 125 °C case temperature?
The SQM40N15-38_GE3 supports 23 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package under high ambient conditions and must be validated against actual PCB layout and heatsinking in the target application. The SQM40N15-38_GE3 maintains safe operation up to 175 °C junction temperature, enabling use in under-hood environments.
Is SQM40N15-38_GE3 suitable for synchronous rectification in a 48 V to 12 V DC-DC converter?
Yes, the SQM40N15-38_GE3 is well-suited for synchronous rectification due to its low 0.038 Ω RDS(on) at VGS = 10 V and fast switching characteristics (tr = 17 ns, tf = 9 ns). Its source-drain diode forward voltage of 0.95 V (typ.) at 85 A further reduces body-diode conduction loss during dead-time intervals. The SQM40N15-38_GE3 has been validated in 150–200 kHz buck converters with efficiency gains >2 % over Schottky solutions.
Does SQM40N15-38_GE3 require a gate resistor for reliable operation?
A gate resistor is recommended for the SQM40N15-38_GE3 to control dV/dt and suppress oscillation-especially in high-di/dt motor drive applications. Typical values range from 2.2 Ω to 10 Ω depending on driver capability and layout parasitics. The SQM40N15-38_GE3's 2 Ω typical gate resistance helps dampen ringing, but external series resistance remains essential for EMI compliance and shoot-through prevention in bridge configurations.
What is the gate threshold voltage range for SQM40N15-38_GE3, and how does it affect drive circuit design?
The SQM40N15-38_GE3 has a gate threshold voltage (VGS(th)) range of 2.5 V to 3.5 V at ID = 250 μA, ensuring consistent turn-on across temperature and process variation. This narrow spread allows reliable operation with 5 V logic-level gate drivers while maintaining noise immunity. For full enhancement, VGS ≥ 10 V is required to achieve the rated 0.038 Ω RDS(on); the SQM40N15-38_GE3 delivers 0.040 Ω at VGS = 6 V, supporting partial-gate-drive strategies in fault-tolerant systems.
How is the thermal performance of SQM40N15-38_GE3 validated, and what PCB layout is recommended?
The SQM40N15-38_GE3's thermal ratings-including RthJC = 0.9 °C/W and RthJA = 40 °C/W-are measured per JEDEC standards using a 1" × 1" FR-4 PCB with 2 oz copper on both sides. Recommended layout uses a minimum 0.355" × 0.420" (9.0 mm × 10.7 mm) thermal pad connected to internal ground/power planes via ≥6 thermal vias. The SQM40N15-38_GE3 achieves optimal cooling when the exposed drain tab is soldered directly to this pad without solder mask coverage.
SQM40N15-38_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 38mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM40N15-38_GE3 FAQ
1.How can I place an order for SQM40N15-38_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM40N15-38_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM40N15-38_GE3 reliable?
The price and inventory of SQM40N15-38_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM40N15-38_GE3 is usually 5 days.
3.What payment methods are accepted for SQM40N15-38_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM40N15-38_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM40N15-38_GE3?
SQM40N15-38_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM40N15-38_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM40N15-38_GE3?
For technical support, including SQM40N15-38_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM40N15-38_GE3 requirements.
6.How does Aetrix verify that SQM40N15-38_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM40N15-38_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM40N15-38_GE3 meets industry standards.
7.What is the process for return or replacement of SQM40N15-38_GE3?
All SQM40N15-38_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM40N15-38_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM40N15-38_GE3 part is unused and in its original packaging.
Return procedure for SQM40N15-38_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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