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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM47N10-24L_GE3

Name: SQM47N10-24L_GE3
Brand: Vishay Siliconix
SKU: SQM47N10-24L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM47N10-24L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM47N10-24L_GE3.pdf

Description:: MOSFET N-CH 100V 47A TO263

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Product details

Overview

SQM47N10-24L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 47 A continuous drain current at 25 °C, and 0.024 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control, DC-DC converters, and high-reliability power switching in automotive ECUs.

For engineers reviewing the SQM47N10-24L_GE3 datasheet, SQM47N10-24L_GE3 pinout, SQM47N10-24L_GE3 application, or SQM47N10-24L_GE3 equivalent, key selection criteria include its 1.1 °C/W junction-to-case thermal resistance, 100 % R_g and UIS tested reliability, and TO-263 (D2PAK) surface-mount package optimized for high-power thermal management.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching performance: total gate charge is 48–72 nC at V_GS = 10 V, with turn-on delay of 10–15 ns and fall time of 6–9 ns under standard test conditions. Its dynamic parameters-including C_iss = 2893–3620 pF and Q_gd = 10 nC-support efficient operation in hard-switched 48 V and 12 V automotive systems.

The device integrates a robust body diode with forward voltage of 0.85–1.5 V at I_F = 40 A and V_GS = 0 V, and is characterized for avalanche energy (E_AS = 92 mJ) and pulsed drain current (I_DM = 189 A), enabling reliable operation in inductive load switching and regenerative braking circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V battery rail and load-dump tolerant designs
R_DS(on) @ V_GS = 10 V	0.024 Ω - Enables ≤ 47 W conduction loss at 47 A, critical for thermally constrained modules
I_D (continuous, T_C = 25 °C)	47 A - Supports high-current motor drivers and solenoid controls without external heatsinking
Junction Temp Range	−55 to +175 °C - Qualified for engine bay placement per AEC-Q101 stress testing
R_thJC	1.1 °C/W - Enables direct thermal coupling to PCB copper or heatsink for >100 W power dissipation
Q_g	48–72 nC - Determines gate driver sizing and switching loss in 20–100 kHz PWM applications
E_AS	92 mJ - Specifies single-pulse avalanche capability for inductive flyback protection

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, 3-lead, thick-lead variant (Facility Code N), with drain-connected tab for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (G)	Gate	Control terminal; requires < ±20 V rating and low-inductance routing to minimize ringing
Lead 2 (D)	Drain	Main power output; electrically and thermally tied to exposed metal tab
Lead 3 (S)	Source	Power return and reference node; forms common source configuration with gate drive

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.024 Ω R_DS(on) in TO-263, reducing conduction loss vs. planar MOSFETs by ≥25 % at same die size
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, UHAST, and ESD per Rev. D test plan
100 % R_g and UIS testing	Ensures gate resistance consistency and unclamped inductive switching robustness across production lots
Low R_thJC (1.1 °C/W)	Permits >100 W continuous power dissipation with minimal thermal interface resistance to heatsink
Body diode V_SD	0.85–1.5 V at 40 A enables efficient freewheeling in H-bridge and buck converter topologies

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration, handling repetitive inductive turn-off transients. Use Value: 92 mJ E_AS and 189 A I_DM ensure reliable operation without external snubbers during injector coil collapse.	Use Scenario: PWM-controlled 48 V blower motor in electric HVAC systems requiring 30–50 A continuous current. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, operating at 20–50 kHz with synchronous rectification. Use Value: 0.024 Ω R_DS(on) limits conduction loss to < 50 W at 47 A, enabling compact thermal design in sealed enclosures.
12 V/48 V DC-DC Converter Primary Switch	Electric Power Steering (EPS) Phase Leg
Use Scenario: Primary-side switch in isolated bidirectional DC-DC converter for 12 V ↔ 48 V energy transfer in mild hybrid vehicles. IC Role / Device Role / Timing Role: High-frequency (100 kHz) hard-switched MOSFET with gate charge of 48–72 nC defining driver requirements. Use Value: Low Q_gd/Q_g ratio (≈0.2) improves switching efficiency and reduces Miller-induced shoot-through risk.	Use Scenario: One leg of three-phase inverter driving 300–500 W EPS motor with field-oriented control. IC Role / Device Role / Timing Role: High-current phase switch rated for 175 °C junction operation during sustained torque demand. Use Value: AEC-Q101 qualification and −55 to +175 °C range guarantee functional safety compliance in ASIL-B systems.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 40 A and 1 ms pulse widths.

IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration, handling repetitive inductive turn-off transients.

Use Value: 92 mJ E_AS and 189 A I_DM ensure reliable operation without external snubbers during injector coil collapse.

Use Scenario: PWM-controlled 48 V blower motor in electric HVAC systems requiring 30–50 A continuous current.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, operating at 20–50 kHz with synchronous rectification.

Use Value: 0.024 Ω R_DS(on) limits conduction loss to < 50 W at 47 A, enabling compact thermal design in sealed enclosures.

12 V/48 V DC-DC Converter Primary Switch

Electric Power Steering (EPS) Phase Leg

Use Scenario: Primary-side switch in isolated bidirectional DC-DC converter for 12 V ↔ 48 V energy transfer in mild hybrid vehicles.

IC Role / Device Role / Timing Role: High-frequency (100 kHz) hard-switched MOSFET with gate charge of 48–72 nC defining driver requirements.

Use Value: Low Q_gd/Q_g ratio (≈0.2) improves switching efficiency and reduces Miller-induced shoot-through risk.

Use Scenario: One leg of three-phase inverter driving 300–500 W EPS motor with field-oriented control.

IC Role / Device Role / Timing Role: High-current phase switch rated for 175 °C junction operation during sustained torque demand.

Use Value: AEC-Q101 qualification and −55 to +175 °C range guarantee functional safety compliance in ASIL-B systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 220 A, R_DS(on) = 0.0035 Ω @ 10 V, TO-220FP package, no AEC-Q101 certification	Higher current, lower R_DS(on), but larger footprint and non-automotive qualified	Select when higher peak current and lower conduction loss are prioritized over automotive qualification and surface-mount assembly
IRF3205PbF	55 V, 110 A, R_DS(on) = 0.008 Ω @ 10 V, TO-220 package, not AEC-Q101 qualified	Lower voltage rating, incompatible with 48 V/100 V systems; lacks high-temp and automotive validation	Only suitable for legacy 12 V industrial motor drives where AEC-Q101 and 100 V blocking are not required

Compared with STL220N10F7 and IRF3205PbF, SQM47N10-24L_GE3 uniquely balances AEC-Q101 compliance, TO-263 thermal performance, and 100 V/47 A capability-making it the only drop-in option for new automotive power modules requiring surface-mount reliability and 175 °C operation.

Availability

SQM47N10-24L_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid DC-DC conversion, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for SQM47N10-24L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM47N10-24L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-efficiency, high-temperature switching in next-generation 12 V/48 V vehicle architectures.

FAQ

What is the maximum continuous drain current rating for SQM47N10-24L_GE3 at 125 °C case temperature?

The SQM47N10-24L_GE3 supports 27 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and ensures safe operation within its 1.1 °C/W R_thJC constraint. Designers must verify PCB copper area and heatsinking to maintain T_C ≤ 125 °C under full-load conditions to sustain this current level in the SQM47N10-24L_GE3.

Is SQM47N10-24L_GE3 qualified for automotive applications per AEC-Q101 standards?

Yes, SQM47N10-24L_GE3 is explicitly AEC-Q101 qualified, as confirmed in the Features section and Product Summary of its Vishay datasheet (S15-1874-Rev. D). The qualification includes stress tests for high-temperature operating life, temperature cycling, unbiased highly accelerated stress testing, and electrostatic discharge-ensuring reliability for under-hood automotive use. SQM47N10-24L_GE3 meets these requirements with parametric verification ongoing per the document notes.

What is the typical gate threshold voltage range for SQM47N10-24L_GE3?

The gate threshold voltage (V_GS(th)) for SQM47N10-24L_GE3 is specified as 1.5 V minimum, 2.0 V typical, and 2.5 V maximum at V_DS = V_GS and I_D = 250 μA. This tight 1.0 V span ensures consistent turn-on behavior across temperature and process variation, supporting robust gate drive design in automotive microcontrollers with 3.3 V or 5 V logic outputs. The SQM47N10-24L_GE3 remains fully enhanced above 4.5 V, enabling reliable operation with standard logic-level drivers.

Does SQM47N10-24L_GE3 include an integrated body diode, and what is its forward voltage?

Yes, SQM47N10-24L_GE3 includes a monolithic body diode with a forward voltage (V_SD) of 0.85 V typical and 1.5 V maximum at I_F = 40 A and V_GS = 0 V. This diode supports freewheeling in inductive loads such as motors and solenoids, and its low V_SD minimizes conduction loss during reverse recovery. The SQM47N10-24L_GE3 body diode is characterized for reverse recovery time and softness in the datasheet's Typical Characteristics section.

What is the recommended PCB pad layout for SQM47N10-24L_GE3 in TO-263 package?

Vishay recommends a minimum copper pad of 0.355" × 0.420" (9.017 mm × 10.668 mm) for the drain tab of SQM47N10-24L_GE3, with 2 oz. FR4 double-sided copper on a 1" × 1" board. Thermal vias under the tab are strongly advised to enhance heat transfer to inner layers or backside heatsinks. The SQM47N10-24L_GE3 mounting guidelines specify coplanarity ≤ 4 mils and lead-to-lead spacing per Document 71198, ensuring reliable reflow soldering and mechanical stability.

SQM47N10-24L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM47N10-24L_GE3 FAQ

1.How can I place an order for SQM47N10-24L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM47N10-24L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM47N10-24L_GE3 reliable?

The price and inventory of SQM47N10-24L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM47N10-24L_GE3 is usually 5 days.

3.What payment methods are accepted for SQM47N10-24L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM47N10-24L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM47N10-24L_GE3?

SQM47N10-24L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM47N10-24L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM47N10-24L_GE3?

For technical support, including SQM47N10-24L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM47N10-24L_GE3 requirements.

6.How does Aetrix verify that SQM47N10-24L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM47N10-24L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM47N10-24L_GE3 meets industry standards.

7.What is the process for return or replacement of SQM47N10-24L_GE3?

All SQM47N10-24L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM47N10-24L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM47N10-24L_GE3 part is unused and in its original packaging.

Return procedure for SQM47N10-24L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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