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Vishay Siliconix SQM50020EL_GE3
- Part No.:
- SQM50020EL_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM50020EL_GE3.pdf
- Description:
- MOSFET N-CH 60V 120A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:1,180
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Product details
Overview
SQM50020EL_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 2.0 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQM50020EL_GE3 datasheet, SQM50020EL_GE3 pinout, SQM50020EL_GE3 application, or SQM50020EL_GE3 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive (2.5 mΩ), 0.4 °C/W junction-to-case thermal resistance, and 375 W maximum power dissipation at TC = 25 °C - critical for high-current automotive power stages.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency power conversion. Its 128 nC typical total gate charge and 1.68 Ω typical gate resistance support controlled turn-on/turn-off timing in synchronous rectification and motor phase-leg drivers.
The device integrates a robust body diode with 0.88 V typical forward voltage at 80 A and is fully characterized for unclamped inductive switching (UIS) and avalanche energy (281 mJ), enabling reliable operation in inductive load switching without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V automotive systems and industrial 24–48 V rails. |
| RDS(on) @ VGS = 10 V | 0.0020 Ω - Enables <1.92 W conduction loss at 120 A, reducing heatsink requirements. |
| RDS(on) @ VGS = 4.5 V | 0.0025 Ω - Supports logic-level gate drive from microcontrollers or gate drivers with 4.5 V output. |
| ID (Continuous) | 120 A at TC = 25 °C - Sustains high-current loads such as electric power steering or HVAC blower motors. |
| Junction Temp Range | –55 °C to +175 °C - Qualified for under-hood environments including engine control units and battery management systems. |
| Qg (Total Gate Charge) | 128 nC typical - Determines driver power requirement and switching loss in PWM applications above 20 kHz. |
| RthJC | 0.4 °C/W - Allows direct thermal coupling to heatsinks or PCB copper planes for efficient heat extraction. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Power Drain Terminal | Electrically and thermally connected to internal MOSFET drain; must be soldered to large copper pour or heatsink. |
| G (Gate) | Control Input | Receives gate drive signal; requires low-inductance routing due to 128 nC Qg and 1.68 Ω Rg. |
| S (Source) | Power Return / Reference | Serves as source node and return path for load current; establishes local ground reference for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use per stress test standards including HTOL, TC, UHAST, and ESD - required for safety-critical ECUs. |
| 100 % UIS tested | Each unit undergoes unclamped inductive switching validation at 75 A single-pulse avalanche current, ensuring ruggedness in motor commutation. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size, improving power density in space-constrained modules. |
| Low RthJC (0.4 °C/W) | Enables >300 W thermal handling with minimal ΔT between junction and heatsink - critical for sustained 120 A operation. |
| Lead (Pb)-free & Halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3). |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge driving 3-phase EPS motor with peak currents up to 120 A. IC Role / Device Role / Timing Role: Low-side and high-side switching element in motor phase legs, operating at 10–20 kHz PWM frequency. Use Value: 2.0 mΩ RDS(on) minimizes I²R losses during torque assist, extending battery range and reducing thermal derating. | Use Scenario: Synchronous rectification in 48 V–12 V bidirectional buck-boost converter for mild hybrid energy recovery. IC Role / Device Role / Timing Role: Primary power switch in high-side and low-side positions, handling continuous 80–100 A output current. Use Value: 4.5 V gate threshold enables direct drive from isolated gate drivers, eliminating level-shifting circuitry and reducing BOM count. |
| Onboard Charger (OBC) AC-DC Stage | Commercial HVAC Blower Drive |
Use Scenario: PFC boost switch in 6.6 kW OBC front-end, operating at 65–100 kHz with 60 V bus clamping. IC Role / Device Role / Timing Role: Fast-switching, low-loss main switch subjected to repetitive avalanche stress during line transients. Use Value: 281 mJ single-pulse avalanche energy rating ensures reliability during grid voltage surges without external clamping diodes. | Use Scenario: Inverter output stage for variable-speed HVAC blowers in buses and commercial vehicles. IC Role / Device Role / Timing Role: N-channel MOSFET in 3-phase inverter leg, switching at 8–15 kHz with 175 °C junction capability. Use Value: +175 °C rated junction temperature supports operation in sealed enclosures near engine compartments without forced cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V, 220 A, RDS(on) = 1.4 mΩ @ 10 V; TO-263 package; AEC-Q101 qualified. | Higher current rating and lower RDS(on), but larger gate charge (170 nC) increases driver complexity. | Select when higher peak current headroom and lower conduction loss are prioritized over switching speed. |
| IRF1405ZLPbF | 55 V, 169 A, RDS(on) = 3.3 mΩ @ 10 V; TO-220 package; not AEC-Q101 qualified. | Larger RDS(on), lower voltage rating, through-hole mounting, and no automotive qualification limit use to non-safety-critical industrial designs. | Select only for cost-sensitive, non-automotive 48 V systems where AEC-Q101 compliance is not required. |
Compared with STL220N6F7AG and IRF1405ZLPbF, SQM50020EL_GE3 offers optimal balance of low RDS(on), moderate gate charge, and full AEC-Q101 qualification in a surface-mount TO-263 package - making it preferred for space-constrained, thermally demanding automotive power stages where reliability and qualification are mandatory.
Availability
SQM50020EL_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and onboard charger applications requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for SQM50020EL_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions.
The SQM series targets high-current automotive and industrial power conversion, designed specifically for AEC-Q101 compliance, low RDS(on), and robust thermal performance in TO-263 packaging.
FAQ
What is the maximum continuous drain current rating for SQM50020EL_GE3 at 125 °C case temperature?
SQM50020EL_GE3 maintains a continuous drain current rating of 120 A even at TC = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient, enabling stable high-current operation in hot under-hood environments without derating.
Is SQM50020EL_GE3 suitable for 4.5 V logic-level gate drive applications?
Yes, SQM50020EL_GE3 delivers 2.5 mΩ RDS(on) at VGS = 4.5 V and ID = 20 A, making it compatible with standard 4.5 V logic outputs and gate drivers. Its 1.5–2.5 V gate threshold voltage ensures reliable turn-on with margin, supporting robust operation across temperature and process variation.
Does SQM50020EL_GE3 include integrated avalanche energy rating?
Yes, SQM50020EL_GE3 is rated for 281 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, and each unit is 100 % UIS tested. This validated ruggedness allows safe operation in inductive switching applications like motor drives without external protection components.
What is the thermal resistance from junction to case (RthJC) for SQM50020EL_GE3?
The junction-to-case (drain) thermal resistance for SQM50020EL_GE3 is 0.4 °C/W, measured under standard conditions. This low value enables efficient heat transfer to external heatsinks or PCB copper layers, supporting high-power dissipation in compact automotive modules.
Is SQM50020EL_GE3 AEC-Q101 qualified and what does that cover?
Yes, SQM50020EL_GE3 is AEC-Q101 qualified. This certification covers stress tests including high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and electrostatic discharge (ESD), validating reliability for automotive electronic control units.
SQM50020EL_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 200 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM50020EL_GE3 FAQ
1.How can I place an order for SQM50020EL_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM50020EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM50020EL_GE3 reliable?
The price and inventory of SQM50020EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50020EL_GE3 is usually 5 days.
3.What payment methods are accepted for SQM50020EL_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50020EL_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM50020EL_GE3?
SQM50020EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM50020EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM50020EL_GE3?
For technical support, including SQM50020EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50020EL_GE3 requirements.
6.How does Aetrix verify that SQM50020EL_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM50020EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50020EL_GE3 meets industry standards.
7.What is the process for return or replacement of SQM50020EL_GE3?
All SQM50020EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50020EL_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM50020EL_GE3 part is unused and in its original packaging.
Return procedure for SQM50020EL_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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