Vishay Siliconix SQM50028EM_GE3

Overview

SQM50028EM_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 2.0 mΩ RDS(on) at VGS = 10 V and ID = 30 A. It operates up to +175 °C junction temperature and is housed in a TO-263-7L (D2PAK) package with drain-connected tab for low thermal resistance - used in high-current DC-DC converters and motor control stages in EV traction inverters and 48 V mild-hybrid systems.

For engineers reviewing the SQM50028EM_GE3 datasheet, SQM50028EM_GE3 pinout, SQM50028EM_GE3 application, or SQM50028EM_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 0.4 °C/W junction-to-case thermal resistance, 123 nC total gate charge, body diode reverse recovery charge of 243–500 nC, and validated UIS robustness - critical for high-reliability automotive power switching.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-frequency synchronous rectification. Its 7-lead TO-263 package integrates a thermally enhanced drain tab and dual source terminals (SS) to reduce parasitic inductance and improve current sharing under pulsed loads.

The device features tightly controlled gate threshold voltage (2.5–3.5 V), low gate resistance (4–13 Ω), and dynamic parameters including 9100–11900 pF input capacitance and 160–220 pF reverse transfer capacitance - enabling precise timing control in gate driver circuits with minimal Miller effect.

Key Specifications

Pinout & Package

Package: TO-263-7L (D2PAK), thermally enhanced surface-mount package with exposed drain tab and seven leads - dimensions per Vishay Doc. #63782 (Revision 19-Sep-2022); recommended land pattern per Doc. #77341.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STL220N6F7AG and IXTH120N60L2, SQM50028EM_GE3 offers optimal balance of low RDS(on), moderate Qg, AEC-Q101 compliance, and proven thermal performance in 48–60 V automotive power stages - making it preferred for space- and reliability-constrained EV subsystems.

Availability

SQM50028EM_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, onboard chargers, and 48 V mild-hybrid motor controllers requiring stable component supply and long-term lifecycle support.

Supply support for SQM50028EM_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQM50028EM_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation electric vehicle power electronics.

FAQ

What is the maximum continuous drain current rating for SQM50028EM_GE3 at 125 °C case temperature?

The SQM50028EM_GE3 maintains a continuous drain current rating of 120 A even at TC = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low RDS(on) temperature coefficient - enabling full-rated current delivery in high-ambient under-hood environments without derating.

Does SQM50028EM_GE3 support Kelvin source sensing, and how is it implemented?

Yes, SQM50028EM_GE3 implements dual Kelvin source terminals (SS ×2) separate from the main source (S) pin. These dedicated sense pins provide low-impedance, low-noise return paths for current-sense amplifiers or gate driver feedback loops - eliminating voltage drop errors caused by bond wire and PCB trace resistance in high-di/dt applications.

Is SQM50028EM_GE3 qualified for automotive applications, and what standard does it meet?

Yes, SQM50028EM_GE3 is explicitly AEC-Q101 qualified for automotive applications, as stated in its features and verified in Vishay's qualification reports. It operates reliably across -55 °C to +175 °C junction temperature and has passed stress tests including HTGB, HTRB, and UIS - meeting requirements for engine control, ADAS power supplies, and electrified powertrain systems.

What is the typical total gate charge (Qg) of SQM50028EM_GE3, and why does it matter for gate driver selection?

The SQM50028EM_GE3 has a typical total gate charge (Qg) of 123 nC at VGS = 10 V, VDS = 30 V, and ID = 50 A. This value directly determines the peak current and average power required from the gate driver - for example, driving at 200 kHz with 10 V swing demands ~2.5 W average gate drive power, guiding selection of drivers like the UCC27531 or NCP302150.

How does the thermal resistance of SQM50028EM_GE3 compare between junction-to-case and junction-to-ambient?

SQM50028EM_GE3 has a junction-to-case (RthJC) thermal resistance of 0.4 °C/W - significantly lower than its junction-to-ambient (RthJA) rating of 40 °C/W on a 1"² FR4 PCB. This highlights the necessity of mounting the drain tab to an external heatsink; relying solely on PCB conduction yields >100× worse thermal performance and rapid thermal runaway under full load.