Vishay Siliconix SQM50034E_GE3

Overview

SQM50034E_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in TO-263 (D2PAK) package, delivering R_DS(on) = 3.9 mΩ at V_GS = 10 V, 100 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood power switching in DC-DC converters and motor control modules.

For engineers reviewing the SQM50034E_GE3 datasheet, SQM50034E_GE3 pinout, SQM50034E_GE3 application, or SQM50034E_GE3 equivalent, key selection criteria include its 175 °C junction rating, low R_DS(on) × Q_g figure-of-merit (≈232 mΩ·nC), 1 Ω junction-to-case thermal resistance, and body diode recovery characteristics (Q_rr = 55–110 nC) critical for synchronous rectification and high-frequency hard-switching topologies.

Technical Context

This TrenchFET® power MOSFET uses deep-trench cell architecture to achieve low on-resistance while maintaining robust avalanche capability (E_AS = 125 mJ) and 100 % UIS testing. Its gate charge profile (Q_g = 58–90 nC, Q_gd = 5–8 nC) supports fast, controlled switching with minimal Miller-induced shoot-through risk in half-bridge configurations.

The device operates across -55 °C to +175 °C junction temperature range and features tight V_GS(th) distribution (2.5–3.5 V) and low gate leakage (±100 nA), enabling stable gate drive in automotive 12 V/48 V systems. Thermal design is enabled by R_thJC = 1 °C/W and validated PCB-mount R_thJA = 40 °C/W on 1"² FR4.

Key Specifications

Pinout & Package

TO-263 (D2PAK) package with exposed drain tab for thermal and electrical connection; 3-lead configuration (G-D-S) with G and S on leads, D on backside tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with STL220N6F7AG and IRF1405PBF, SQM50034E_GE3 offers the optimal balance of low R_DS(on), moderate Q_g, AEC-Q101 compliance, and proven thermal performance in TO-263-making it the preferred choice for production automotive power stages where reliability, efficiency, and layout compatibility are jointly constrained.

Availability

SQM50034E_GE3 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and on-board charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable AEC-Q101-compliant sourcing.

Supply support for SQM50034E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQM50034E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power conversion in next-generation 48 V and hybrid vehicle systems.

FAQ

What is the maximum continuous drain current rating for SQM50034E_GE3 at 125 °C case temperature?

The SQM50034E_GE3 supports 80 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify actual case temperature using R_thJC = 1 °C/W and system-level thermal modeling before finalizing current ratings.

Is SQM50034E_GE3 suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes, SQM50034E_GE3 is well-suited for synchronous rectification due to its low R_DS(on) (3.9 mΩ), fast body diode recovery (t_rr = 50–100 ns, Q_rr = 55–110 nC), and low Q_gd/Q_g ratio. These characteristics reduce reverse recovery losses and improve light-load efficiency. Its 175 °C rating also accommodates elevated temperatures typical in high-density buck converters.

Does SQM50034E_GE3 have a Kelvin source connection for improved gate control?

No, SQM50034E_GE3 is a standard 3-lead TO-263 device without Kelvin source. It uses a single-source terminal for both power return and gate drive reference. For applications requiring separate sense paths (e.g., precision current monitoring), designers should consider 7-lead variants like STL220N6F7AG-not SQM50034E_GE3.

What is the gate threshold voltage range for SQM50034E_GE3, and how does it affect 5 V logic-level drive?

The gate threshold voltage V_GS(th) for SQM50034E_GE3 is specified as 2.5–3.5 V at I_D = 250 μA. While this allows turn-on with 5 V logic, full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). Using 5 V drive results in significantly higher on-resistance (>10×) and unacceptable conduction loss-SQM50034E_GE3 must be driven with ≥10 V for production use.

How is the avalanche ruggedness of SQM50034E_GE3 validated, and what does EAS = 125 mJ mean in practice?

SQM50034E_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC standards, with single-pulse avalanche energy E_AS = 125 mJ measured at L = 0.1 mH. In practice, this means the device can safely absorb 125 mJ of inductive energy during turn-off without failure-enabling robust operation in motor drives and solenoid controls where snubberless design is desired.