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Vishay Siliconix SQM50034EL_GE3
- Part No.:
- SQM50034EL_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM50034EL_GE3.pdf
- Description:
- MOSFET N-CH 60V 100A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:460
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Product details
Overview
SQM50034EL from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 100 A continuous drain current at TC = 25 °C, and 0.0039 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-263 (D2PAK) package with low thermal resistance (RthJC = 1 °C/W), targeting high-efficiency DC-DC converters and motor control in engine management systems.
For engineers reviewing the SQM50034EL datasheet, SQM50034EL pinout, SQM50034EL application, or SQM50034EL equivalent, key selection criteria include its AEC-Q101 qualification, 100% UIS and Rg testing, 60 V breakdown rating, 0.0050 Ω RDS(on) at 4.5 V gate drive, and suitability for high-current switching in under-hood automotive power stages.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching performance. Its gate charge profile (Qg = 60–90 nC, Qgd = 4.8 nC) supports efficient hard-switching in synchronous buck converters and H-bridge motor drivers.
The device integrates a robust body diode with trr = 42–85 ns and Qrr = 34–70 nC, enabling reliable freewheeling in inductive loads. Thermal design is supported by RthJC = 1 °C/W and RthJA = 40 °C/W (on 1"² FR4 PCB), making it suitable for thermally constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and DC-DC primary-side switching |
| RDS(on) @ VGS = 10 V | 0.0039 Ω - Enables <1 W conduction loss at 50 A, critical for high-current power stages |
| RDS(on) @ VGS = 4.5 V | 0.0050 Ω - Ensures robust turn-on with standard 5 V logic-level gate drivers |
| ID (continuous) | 100 A @ TC = 25 °C - Supports high-power motor drives and starter solenoid control without derating at board level |
| TJ range | –55 °C to +175 °C - Qualified for under-hood operation including transmission control units and EPS modules |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive semiconductor reliability (HTOL, TC, UHAST, etc.) |
| Qg / Qgd | 60–90 nC / 4.8 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk in high-speed switching |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection to PCB heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives gate drive signal; requires ≤ ±20 V rating and low-impedance path to minimize switching losses |
| D (Drain) | High-side power terminal | Connected to load or supply rail; electrically and thermally tied to large copper pour via exposed tab |
| S (Source) | Power return / reference node | Serves as local ground reference for gate driver; must be routed with low inductance to avoid ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers industry-leading RDS(on) × area efficiency for compact 60 V power stages |
| 100 % Rg and UIS tested | Ensures gate robustness against transient overvoltage and avalanche energy handling (EAS = 115 mJ) |
| Low RthJC = 1 °C/W | Enables >100 W power dissipation with minimal ΔT between junction and heatsink |
| Body diode with trr = 42–85 ns | Reduces switching losses and EMI during inductive freewheeling in half-bridge configurations |
| AEC-Q101 qualified | Validated for automotive use per stress test standards, supporting PPAP and long-term field reliability |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Motor Phase Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with PWM duty cycles up to 90 %. IC Role / Device Role / Timing Role: Main power switch controlling injector coil current; handles repetitive 50 A peak pulses at 1 kHz. Use Value: Low RDS(on) and fast turn-off (tf = 7–15 ns) minimize coil energy loss and enable precise fuel metering. |
Use Scenario: Half-bridge phase leg in 12 V EPS motor drive, operating continuously at 60–80 A RMS. IC Role / Device Role / Timing Role: Low-side or high-side switching element; synchronized with complementary MOSFET in 20–40 kHz PWM. Use Value: 175 °C TJ rating and AEC-Q101 qualification ensure reliability in sealed, thermally isolated steering column enclosures. |
| 48 V Mild Hybrid DC-DC Converter Primary Switch | Automotive HVAC Blower Motor Controller |
Use Scenario: Primary-side switch in bidirectional 48 V–12 V DC-DC converter for energy recovery and load leveling. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch operating at 100–200 kHz with 60 V blocking requirement. Use Value: Low Qgd and Coss support ZVS capability; RDS(on) stability over temperature maintains efficiency across ambient –40 °C to +105 °C. |
Use Scenario: Full-bridge driver for brushed DC blower motor delivering up to 800 W airflow in cabin climate systems. IC Role / Device Role / Timing Role: High-current H-bridge leg switch; subjected to frequent polarity reversal and stall conditions. Use Value: 320 A pulsed drain current (IDM) and 48 A single-pulse avalanche rating (IAS) withstand motor startup surges and inductive kickback. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(on) = 0.0028 Ω @ 10 V, but only rated to +150 °C TJ and not AEC-Q101 qualified | Not approved for under-hood automotive use; limited to industrial or non-safety-critical systems | Select when higher current density is needed and automotive qualification is not required |
| IRF1405ZPBF | RDS(on) = 0.0055 Ω @ 10 V, TO-220 package, RthJC = 1.25 °C/W, no AEC-Q101 or UIS testing | Lacks automotive qualification and thermal performance; suited for cost-sensitive non-automotive power supplies | Choose for legacy designs where TO-220 mounting and lower gate charge tolerance are acceptable |
Compared with STL220N6F7AG and IRF1405ZPBF, the SQM50034EL uniquely combines AEC-Q101 qualification, 175 °C operation, and sub-4 mΩ on-resistance in a thermally optimized D2PAK package-making it the only option qualified for next-generation engine bay and ADAS power modules requiring zero derating at full load.
Availability
SQM50034EL is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and battery management systems requiring stable component supply, long-lifecycle support, and traceable sourcing for Tier-1 OEM programs.
Supply support for SQM50034EL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM50034EL belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability, high-current switching in engine control, electrified chassis, and 12 V/48 V hybrid architectures.
FAQ
What is the maximum continuous drain current rating for SQM50034EL at 125 °C case temperature?
The SQM50034EL supports 80 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures safe operation in high-ambient environments such as engine compartments. The SQM50034EL maintains RDS(on) stability up to 175 °C junction temperature, allowing system-level thermal margin beyond case-rated limits.
Is SQM50034EL suitable for use with 5 V microcontroller gate drivers?
Yes, the SQM50034EL is fully compatible with 5 V logic-level gate drivers: its RDS(on) is specified at VGS = 4.5 V (0.0050 Ω), and gate threshold voltage VGS(th) ranges from 1.5 V to 2.5 V. This ensures strong enhancement-mode turn-on with sufficient gate overdrive, minimizing conduction losses even with marginal 5 V drive. The SQM50034EL also features low gate resistance (Rg = 0.6–1.9 Ω), reducing susceptibility to oscillation.
Does SQM50034EL include integrated avalanche energy rating?
Yes, the SQM50034EL is rated for single-pulse avalanche energy EAS = 115 mJ and single-pulse avalanche current IAS = 48 A (L = 0.1 mH). These values are production-tested per AEC-Q101 requirements, confirming ruggedness against inductive switching transients common in motor and solenoid drive applications. The SQM50034EL's 100 % UIS testing further validates its ability to survive repetitive unclamped inductive switching events.
What is the thermal resistance from junction to case (RthJC) for SQM50034EL, and how does it impact heatsink design?
The SQM50034EL has a typical RthJC of 1.0 °C/W, measured from junction to the drain tab (case). This exceptionally low value enables direct mounting to a PCB copper plane or external heatsink with minimal thermal interface resistance. For example, with a 2 °C/W heatsink and 100 A current, total junction-to-ambient rise is ~300 °C - meaning effective heatsinking or forced air is required to stay within the 175 °C TJ limit. The SQM50034EL's RthJC specification assumes full solder coverage of the exposed drain pad.
How does the body diode performance of SQM50034EL compare to standard silicon diodes in freewheeling applications?
The SQM50034EL's intrinsic body diode exhibits VSD = 0.81–1.5 V at IF = 25 A and trr = 42–85 ns, significantly faster and lower forward drop than discrete 60 V Schottky diodes used in similar applications. Its Qrr = 34–70 nC reduces reverse recovery losses in synchronous rectification and half-bridge topologies. Unlike external diodes, the body diode shares the same thermal mass as the MOSFET channel, ensuring matched temperature behavior - a key advantage in the SQM50034EL for automotive motor control where thermal coupling affects reliability.
SQM50034EL_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM50034EL_GE3 FAQ
1.How can I place an order for SQM50034EL_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM50034EL_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM50034EL_GE3 reliable?
The price and inventory of SQM50034EL_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50034EL_GE3 is usually 5 days.
3.What payment methods are accepted for SQM50034EL_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50034EL_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM50034EL_GE3?
SQM50034EL_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM50034EL_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM50034EL_GE3?
For technical support, including SQM50034EL_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50034EL_GE3 requirements.
6.How does Aetrix verify that SQM50034EL_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM50034EL_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50034EL_GE3 meets industry standards.
7.What is the process for return or replacement of SQM50034EL_GE3?
All SQM50034EL_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50034EL_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM50034EL_GE3 part is unused and in its original packaging.
Return procedure for SQM50034EL_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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