My Inquiry
My Account
Vishay Siliconix SQM50N04-4M1_GE3
- Part No.:
- SQM50N04-4M1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM50N04-4M1_GE3.pdf
- Description:
- MOSFET N-CH 40V 50A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,206
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQM50N04-4M1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 50 A continuous drain current at TC = 25 °C, and 0.0041 Ω RDS(on) at VGS = 10 V and ID = 30 A. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQM50N04-4M1_GE3 datasheet, SQM50N04-4M1_GE3 pinout, SQM50N04-4M1_GE3 application, or SQM50N04-4M1_GE3 equivalent, key selection criteria include its low RDS(on) at high temperature, 100 % Rg and UIS tested reliability, TO-263 (D2PAK) thermal performance with RthJC = 1 °C/W, and automotive qualification status.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-current DC power stages. Its gate threshold voltage (VGS(th)) is tightly specified at 2.5–3.5 V, enabling robust drive compatibility with 3.3 V and 5 V controllers.
The device integrates a low-forward-voltage body diode (VSD = 0.86 V typ. at IF = 50 A), supports 200 A pulsed drain current (IDM), and delivers 180 mJ single-pulse avalanche energy (EAS), making it suitable for inductive load switching with inherent fault robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin |
| RDS(on) | 0.0041 Ω @ VGS = 10 V, ID = 30 A - Enables <0.5 W conduction loss at 50 A in thermally optimized layouts |
| ID (cont.) | 50 A @ TC = 25 °C - Sustains full-rated current with heatsink or PCB copper area per Vishay's 1"² FR-4 reference |
| TJ Range | –55 to +175 °C - Supports operation in engine bay, transmission control, and battery disconnect modules |
| RthJC | 1 °C/W - Enables direct thermal path to heatsink; critical for high-power density designs |
| Qg | 70–105 nC - Determines gate driver power requirement and switching loss trade-off at 100 kHz+ frequencies |
| EAS | 180 mJ - Withstands inductive energy during fault events without failure in motor drive or solenoid circuits |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Lead (Pb)-free and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output / high-current return path | Connected to exposed metal tab; must be soldered to large copper pour or heatsink for thermal management |
| G (Gate) | Control input for channel activation | High-impedance node requiring low-inductance gate loop; Rg = 0.9–2.8 Ω typical for EMI and dV/dt control |
| S (Source) | Power ground reference / current sense node | Provides Kelvin source connection point; used for accurate current sensing and gate drive referencing |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST per stress test requirements |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs for improved efficiency in hard-switched converters |
| Low RthJC = 1 °C/W | Enables >100 W power dissipation with modest heatsinking-critical for space-constrained engine control units |
| Body diode VSD = 0.86 V typ. | Reduces freewheeling losses in synchronous rectification and half-bridge configurations |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems. IC Role / Device Role / Timing Role: Power switch controlling injector coil energization and de-energization with precise pulse-width modulation. Use Value: Low RDS(on) minimizes heat generation during extended duty cycles; 175 °C rating ensures reliability near hot engine components. | Use Scenario: Primary-side switching element in 48 V–12 V bidirectional buck-boost converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier or main switching FET operating at 100–300 kHz. Use Value: Low Qg and fast switching times (td(on) = 12 ns, tf = 9 ns) reduce dynamic losses; EAS rating handles inductive transients during phase reversal. |
| Electric Power Steering (EPS) Motor Phase Leg | On-Board Charger (OBC) Input Stage Switch |
Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC motors in EPS systems. IC Role / Device Role / Timing Role: High-side or low-side switch handling peak currents up to 200 A in short pulses. Use Value: 200 A pulsed drain current (IDM) and 180 mJ avalanche energy support motor stall and fault conditions without failure. | Use Scenario: AC-DC front-end PFC or isolated DC-DC primary switch in vehicle OBC modules. IC Role / Device Role / Timing Role: Fast-switching, high-current power transistor in totem-pole or LLC resonant topologies. Use Value: Tight VGS(th) distribution (2.5–3.5 V) ensures consistent turn-on across temperature; TO-263 package enables reliable thermal coupling to aluminum baseplate. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A (peak), RDS(on) = 0.0017 Ω @ 10 V - lower on-resistance but larger D2PAK-7 package | Higher current capability suits higher-power EPS or traction inverters; not drop-in due to different pinout and footprint | Select when system requires >100 A peak current and board layout allows larger package |
| IRF1404ZLPBF | 40 V, 184 A (peak), RDS(on) = 0.0027 Ω @ 10 V - legacy planar MOSFET, higher Qg (133 nC), no AEC-Q101 | Lacks automotive qualification; suitable only for non-safety-critical industrial or aftermarket designs | Choose only for cost-sensitive, non-automotive applications where AEC-Q101 is not required |
Compared with STL220N4F7AG and IRF1404ZLPBF, the SQM50N04-4M1_GE3 offers optimal balance of automotive qualification, thermal performance (RthJC = 1 °C/W), and compact TO-263 footprint-making it preferred for space- and reliability-constrained ECU, EPS, and OBC modules.
Availability
SQM50N04-4M1_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, electric power steering, and on-board charging systems requiring stable component supply and long-term lifecycle support.
Supply support for SQM50N04-4M1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM50N04-4M1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control, battery management, and electrified powertrain subsystems.
FAQ
Is SQM50N04-4M1_GE3 qualified for automotive applications?
Yes, SQM50N04-4M1_GE3 is AEC-Q101 qualified and 100 % Rg and UIS tested. It meets automotive stress requirements including temperature cycling, high-temperature reverse bias, and unclamped inductive switching-making it suitable for engine control, EPS, and battery disconnect modules where reliability is critical.
What is the maximum continuous drain current for SQM50N04-4M1_GE3 at 125 °C case temperature?
The SQM50N04-4M1_GE3 supports 50 A continuous drain current at TC = 125 °C, matching its rating at 25 °C due to its robust thermal design and low RDS(on) temperature coefficient. This reflects its ability to sustain full current under elevated thermal conditions common in under-hood environments.
Does SQM50N04-4M1_GE3 have a specified gate resistance value?
Yes, SQM50N04-4M1_GE3 has a typical gate resistance (Rg) of 1.86 Ω, with a range of 0.9–2.8 Ω measured at 1 MHz. This parameter is critical for optimizing gate drive loop stability, EMI suppression, and switching speed-especially in high-frequency DC-DC converters using the SQM50N04-4M1_GE3.
Can SQM50N04-4M1_GE3 be used in synchronous rectification topologies?
Yes, SQM50N04-4M1_GE3 is well-suited for synchronous rectification due to its low RDS(on) (0.0041 Ω), fast switching characteristics (td(on) = 12 ns, tf = 9 ns), and low forward voltage body diode (VSD = 0.86 V typ.). These features reduce conduction and recovery losses in secondary-side switches of isolated DC-DC converters using the SQM50N04-4M1_GE3.
What is the thermal resistance from junction to case (RthJC) for SQM50N04-4M1_GE3?
The SQM50N04-4M1_GE3 has a junction-to-case thermal resistance (RthJC) of 1 °C/W, measured from junction to the drain tab. This low value enables efficient heat transfer to external heatsinks or PCB copper layers-essential for maintaining safe junction temperatures in high-power automotive applications using the SQM50N04-4M1_GE3.
SQM50N04-4M1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6715 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM50N04-4M1_GE3 FAQ
1.How can I place an order for SQM50N04-4M1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM50N04-4M1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM50N04-4M1_GE3 reliable?
The price and inventory of SQM50N04-4M1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50N04-4M1_GE3 is usually 5 days.
3.What payment methods are accepted for SQM50N04-4M1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50N04-4M1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM50N04-4M1_GE3?
SQM50N04-4M1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM50N04-4M1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM50N04-4M1_GE3?
For technical support, including SQM50N04-4M1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50N04-4M1_GE3 requirements.
6.How does Aetrix verify that SQM50N04-4M1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM50N04-4M1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50N04-4M1_GE3 meets industry standards.
7.What is the process for return or replacement of SQM50N04-4M1_GE3?
All SQM50N04-4M1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50N04-4M1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM50N04-4M1_GE3 part is unused and in its original packaging.
Return procedure for SQM50N04-4M1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQM50N04-4M1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
