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Vishay Siliconix SQM50P03-07_GE3
- Part No.:
- SQM50P03-07_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM50P03-07_GE3.pdf
- Description:
- MOSFET P-CHANNEL 30V 50A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:793
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Product details
Overview
SQM50P03-07_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current, low-voltage switching in power distribution and load control circuits. It features -30 V VDS, 0.0070 Ω RDS(on) at -10 V VGS, -50 A continuous drain current, AEC-Q101 qualification, and TO-263 (D2PAK) package with 1 °C/W junction-to-case thermal resistance - used in 12 V automotive body control modules for high-side battery disconnect.
For engineers reviewing the SQM50P03-07_GE3 datasheet, SQM50P03-07_GE3 pinout, SQM50P03-07_GE3 application, or SQM50P03-07_GE3 equivalent, key selection criteria include its -30 V rating, low RDS(on) at 4.5 V gate drive, 175 °C junction temperature capability, and AEC-Q101 qualification for under-hood power switching.
Technical Context
This P-channel MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with robust avalanche energy rating (125 mJ). Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard 5 V or 3.3 V logic-level controllers in high-side configurations.
The device supports bidirectional current flow via its integrated body diode (VSD = -0.9 V at -45 A), and its 103.5 nC total gate charge enables efficient driving in PWM-controlled DC loads such as solenoids, fans, and lighting systems operating up to 175 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage compatible with 12 V automotive systems including load dump transients. |
| RDS(on) @ -10 V | 0.0070 Ω - Enables ≤ 10.5 W conduction loss at -50 A, supporting high-efficiency power distribution without forced cooling. |
| RDS(on) @ -4.5 V | 0.0110 Ω - Ensures full enhancement with 5 V microcontroller GPIOs, eliminating need for level-shifting gate drivers. |
| ID Continuous | -50 A at TC = 25 °C - Supports high-current loads like HVAC blowers and seat motors when mounted on ≥1"² FR-4 PCB. |
| EAS | 125 mJ - Withstands single-pulse inductive energy from relay coils or motor windings without failure. |
| TJ Range | -55 °C to +175 °C - Qualified for engine bay and transmission control unit environments per AEC-Q101 Rev D. |
| RthJC | 1.0 °C/W - Allows direct heatsinking to metal chassis or copper pour, enabling >100 W power dissipation with minimal ΔT. |
Pinout & Package
TO-263 (D2PAK) surface-mount package with exposed drain tab for thermal and electrical connection. Three terminals: Gate (G), Source (S), Drain (D). Drain tab is electrically connected to the drain terminal and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control input | Accepts negative gate-source voltage to turn on; threshold centered at -2.0 V with ±0.5 V variation across temperature. |
| Source (S) | Reference node | Connected to system ground or positive rail in high-side switch configuration; carries full load current. |
| Drain (D) | Power output | Connected to load; exposed metal tab provides low-inductance, low-thermal-resistance path to heatsink or PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × Qg figure of merit (0.72 Ω·nC), minimizing switching + conduction losses in 10–100 kHz PWM applications. |
| AEC-Q101 qualified | Validated for automotive use with HTOL, TC, UHAST, and ESD testing - suitable for ASIL-B relevant subsystems without additional qualification. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parasitic oscillation or avalanche overstress. |
| Low RthJA (40 °C/W) | Enables 3.75 W dissipation on standard 1"² double-sided FR-4 PCB - sufficient for intermittent 20 A loads without external heatsink. |
| Integrated body diode | VSD = -0.9 V at -45 A ensures low-loss freewheeling in inductive loads, reducing need for external catch diodes in H-bridge or buck converter topologies. |
Applications
| Automotive Body Control Module (BCM) | Engine Control Unit (ECU) Power Distribution |
|---|---|
Use Scenario: High-side switching of 12 V accessory loads (e.g., power windows, door locks) with reverse-battery protection. IC Role / Device Role / Timing Role: P-channel MOSFET acting as controlled high-side power switch with fast turn-on/turn-off (<100 ns combined delay + rise/fall). Use Value: Eliminates need for charge pump or high-side driver IC due to logic-level compatibility and low RDS(on) at -4.5 V gate drive. |
Use Scenario: Redundant power rail switching in engine management systems requiring fault-tolerant 12 V supply routing. IC Role / Device Role / Timing Role: Load switch providing overcurrent and thermal shutdown signaling via sense-FET integration (supported by external circuitry). Use Value: 175 °C operation and AEC-Q101 qualification ensure reliability during extended engine runtime and under-hood thermal cycling. |
| Commercial Vehicle Lighting Control | Off-Highway Equipment Battery Management |
Use Scenario: PWM dimming of LED headlamps and fog lamps in heavy-duty trucks with wide ambient temperature range. IC Role / Device Role / Timing Role: Low-loss switching element in constant-current LED driver output stage, handling up to 50 A peak pulses. Use Value: 125 mJ EAS withstands inductive kickback from lamp ballasts; low Ciss (4304 pF typ.) reduces gate drive power at 20 kHz switching. |
Use Scenario: Isolation of auxiliary battery banks in construction and agricultural machinery with dual-battery architectures. IC Role / Device Role / Timing Role: Bidirectional power switch enabling controlled charge/discharge between starter and house batteries using body diode conduction. Use Value: Integrated source-drain diode with -0.9 V forward drop minimizes voltage loss during regenerative braking or alternator charging paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | RDS(on) = 0.02 Ω @ -10 V; TO-220 package; no AEC-Q101 qualification; RthJC = 2.5 °C/W. | Lower current rating (-74 A vs. -50 A), higher thermal resistance - requires larger heatsink in same footprint. | Choose IRF4905PbF only for non-automotive industrial use where qualification and thermal performance are secondary. |
| STP55P03LH6 | RDS(on) = 0.0075 Ω @ -10 V; TO-220FP package; AEC-Q101 qualified; RthJC = 1.5 °C/W; lower Qg (72 nC). | Same voltage/current class but vertical mounting limits PCB heat spreading; smaller gate charge eases driving at high frequency. | Prefer STP55P03LH6 when board space allows TO-220FP and gate drive strength is limited, but prioritize SQM50P03-07_GE3 for surface-mount thermal optimization. |
Compared with IRF4905PbF and STP55P03LH6, SQM50P03-07_GE3 offers superior thermal performance (1.0 °C/W RthJC) and optimized surface-mount layout for automotive PCBs, while maintaining competitive RDS(on) and AEC-Q101 compliance - making it the preferred choice for space-constrained, thermally demanding high-side switches.
Availability
SQM50P03-07_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and commercial vehicle lighting control requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQM50P03-07_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.
The SQM50P03-07_GE3 belongs to Vishay's TrenchFET® Automotive P-channel MOSFET family, engineered specifically for high-reliability, high-current 12 V system switching in harsh thermal and electrical environments.
FAQ
What is the maximum continuous drain current rating for SQM50P03-07_GE3 at 125 °C case temperature?
The SQM50P03-07_GE3 maintains -50 A continuous drain current rating even at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification for sustained operation in hot under-hood locations. The device's RDS(on) increases predictably with temperature, remaining below 0.0102 Ω at 125 °C and -30 A, ensuring stable performance across its full operating range.
Does SQM50P03-07_GE3 support 4.5 V gate drive for full enhancement in automotive microcontroller applications?
Yes, SQM50P03-07_GE3 is fully enhanced at -4.5 V VGS, delivering 0.0110 Ω RDS(on) at -20 A. Its gate threshold voltage range of -1.5 V to -2.5 V ensures reliable turn-on with standard 5 V or 3.3 V automotive MCUs without requiring gate boosters or level shifters - a key advantage over older P-channel MOSFETs with higher |VGS(th)|.
Is SQM50P03-07_GE3 suitable for high-side switch configurations with reverse-battery protection?
Yes, SQM50P03-07_GE3 is commonly deployed in high-side switch configurations for reverse-battery protection. Its P-channel topology inherently blocks reverse polarity when the source is tied to battery positive, and its -30 V VDS rating accommodates ISO 7637-2 pulse 1 and pulse 4a transients. Combined with its 175 °C TJ rating, SQM50P03-07_GE3 delivers robust protection in 12 V automotive power networks.
What is the avalanche energy rating of SQM50P03-07_GE3, and how is it validated?
The SQM50P03-07_GE3 has a single-pulse avalanche energy rating (EAS) of 125 mJ, measured under standardized conditions (L = 0.1 mH, IAS = -50 A). This rating is validated through 100 % unclamped inductive switching (UIS) testing per JEDEC standards, ensuring each device can safely absorb inductive energy from solenoids, relays, or motors without degradation - critical for automotive load-dump resilience.
How does the thermal resistance of SQM50P03-07_GE3 compare to similar TO-263 MOSFETs, and what does it mean for PCB layout?
SQM50P03-07_GE3 achieves 1.0 °C/W junction-to-case (RthJC) thermal resistance - among the lowest in its class - due to optimized die attach and large copper drain tab. This enables >100 W power dissipation when the drain tab is soldered to ≥2 oz. copper thermal pad (1"² minimum). For PCB layout, this means minimal thermal vias or external heatsinks are needed, simplifying mechanical integration in space-constrained automotive modules.
SQM50P03-07_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5380 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TA)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM50P03-07_GE3 FAQ
1.How can I place an order for SQM50P03-07_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM50P03-07_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM50P03-07_GE3 reliable?
The price and inventory of SQM50P03-07_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50P03-07_GE3 is usually 5 days.
3.What payment methods are accepted for SQM50P03-07_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50P03-07_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM50P03-07_GE3?
SQM50P03-07_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM50P03-07_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM50P03-07_GE3?
For technical support, including SQM50P03-07_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50P03-07_GE3 requirements.
6.How does Aetrix verify that SQM50P03-07_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM50P03-07_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50P03-07_GE3 meets industry standards.
7.What is the process for return or replacement of SQM50P03-07_GE3?
All SQM50P03-07_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50P03-07_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM50P03-07_GE3 part is unused and in its original packaging.
Return procedure for SQM50P03-07_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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