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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM50P04-09L_GE3

Name: SQM50P04-09L_GE3
Brand: Vishay Siliconix
SKU: SQM50P04-09L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM50P04-09L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM50P04-09L_GE3.pdf

Description:: MOSFET P-CHANNEL 40V 50A TO263

Quantity:: RFQ Add To RFQ list

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Inventory:1,466

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Product details

Overview

SQM50P04-09L_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-current DC-DC conversion, load switching, and reverse polarity protection in 12 V/24 V vehicle systems. It features -40 V V_DS, 0.0094 Ω R_DS(on) at -10 V V_GS, -50 A continuous drain current, TO-263 (D2PAK) package, and AEC-Q101 qualification.

For engineers reviewing the SQM50P04-09L_GE3 datasheet, SQM50P04-09L_GE3 pinout, SQM50P04-09L_GE3 application, or SQM50P04-09L_GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 175 °C junction rating, robust UIS capability, and thermal resistance of 1 °C/W (Junction-to-Case), critical for under-hood power management designs.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching with controlled Q_g (96.5 nC typical) and low C_iss (4836 pF typical). Its negative threshold voltage (-1.5 to -2.5 V) enables direct logic-level drive from automotive microcontrollers without level-shifting.

The integrated body diode supports synchronous rectification and freewheeling in buck converters and H-bridge motor drivers. Thermal design leverages the TO-263's exposed drain tab for low R_thJC (1 °C/W), enabling high-power operation with minimal heatsinking when mounted on FR-4 PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Withstands transients up to ISO 7637-2 Pulse 5a (clamped to -40 V) in 24 V battery systems.
R_DS(on) @ -10 V	0.0094 Ω - Delivers <1.5 W conduction loss at -50 A, enabling compact thermal design.
R_DS(on) @ -4.5 V	0.0170 Ω - Ensures reliable turn-on with standard 5 V automotive MCU GPIOs.
I_D Continuous	-50 A @ T_C = 125 °C - Supports high-current loads like HVAC blowers and seat heaters without derating.
E_AS	125 mJ - Withstands repetitive inductive switching events in solenoid and relay drivers.
T_J Range	-55 to +175 °C - Certified for engine bay placement per AEC-Q101 stress testing.
R_thJC	1 °C/W - Enables direct thermal coupling to chassis or heatsink for >100 W power dissipation.

Pinout & Package

TO-263 (D2PAK) package with exposed drain tab for thermal and electrical connection. Three leads: Drain (tab), Source (lead 1), Gate (lead 2). Mounting requires soldering the tab to a large copper area for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output terminal / thermal path	Exposed metal tab serves as primary current path and heat sink interface; must be electrically connected to system ground or negative rail.
Source (Lead 1)	Reference node / return path	Common source connection for gate drive reference; ties to load ground or battery negative in high-side switch configurations.
Gate (Lead 2)	Control input	Receives negative gate drive relative to source; requires <100 nA leakage handling and ESD protection per AEC-Q101.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UIS stress per Rev. D test plan.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and single-pulse avalanche energy (125 mJ) - ensures field reliability in inductive loads.
TrenchFET® architecture	Enables 0.0170 Ω R_DS(on) at -4.5 V V_GS, reducing gate drive power and enabling 5 V MCU compatibility.
Low R_thJC (1 °C/W)	Permits >100 W continuous power dissipation with minimal external heatsinking when mounted on 1"² FR-4 PCB.
Enhanced body diode	V_SD = -0.95 V @ -40 A enables efficient freewheeling in buck regulators and motor drives without external Schottky.

Applications

Engine Control Unit Power Distribution	Automotive Body Control Module
Use Scenario: High-side power switch for fuel injector drivers and ignition coil pre-drivers in ICE powertrain control units. IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side switch with gate driven by dedicated driver IC; handles 50 A pulsed loads at 10–20 kHz PWM frequencies. Use Value: Low R_DS(on) minimizes I²R heating during extended cranking (low-battery conditions), while 175 °C rating ensures operation near hot ECU housings.	Use Scenario: Reverse polarity protection and load switching for lighting modules, window lift motors, and mirror actuators. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in 12 V supply rails; activated only during normal polarity conditions. Use Value: 0.0094 Ω R_DS(on) reduces voltage drop to <500 mV at 50 A, eliminating heat sink requirements versus discrete diode solutions.
48 V Mild Hybrid DC-DC Converter	Commercial Vehicle Battery Management
Use Scenario: Synchronous rectifier in secondary side of isolated 48 V–12 V bidirectional buck-boost converter. IC Role / Device Role / Timing Role: P-channel MOSFET operating in synchronous rectification mode with gate driven by transformer-coupled signal; conducts during low-side switch off-time. Use Value: Fast turn-off delay (61 ns typical) and low Q_gd/Q_gs ratio enable precise dead-time control, minimizing shoot-through risk at 200–500 kHz switching.	Use Scenario: Isolation switch between starter battery and auxiliary LiFePO₄ bank in Class 8 trucks and buses. IC Role / Device Role / Timing Role: High-current main disconnect MOSFET controlled via isolated gate driver; rated for 50 A continuous and 200 A pulsed surge currents. Use Value: 125 mJ E_AS withstands load dump transients and inductive kickback from alternator regulation faults without failure.

Engine Control Unit Power Distribution

Automotive Body Control Module

Use Scenario: High-side power switch for fuel injector drivers and ignition coil pre-drivers in ICE powertrain control units.

IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side switch with gate driven by dedicated driver IC; handles 50 A pulsed loads at 10–20 kHz PWM frequencies.

Use Value: Low R_DS(on) minimizes I²R heating during extended cranking (low-battery conditions), while 175 °C rating ensures operation near hot ECU housings.

Use Scenario: Reverse polarity protection and load switching for lighting modules, window lift motors, and mirror actuators.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement in 12 V supply rails; activated only during normal polarity conditions.

Use Value: 0.0094 Ω R_DS(on) reduces voltage drop to <500 mV at 50 A, eliminating heat sink requirements versus discrete diode solutions.

48 V Mild Hybrid DC-DC Converter

Commercial Vehicle Battery Management

Use Scenario: Synchronous rectifier in secondary side of isolated 48 V–12 V bidirectional buck-boost converter.

IC Role / Device Role / Timing Role: P-channel MOSFET operating in synchronous rectification mode with gate driven by transformer-coupled signal; conducts during low-side switch off-time.

Use Value: Fast turn-off delay (61 ns typical) and low Q_gd/Q_gs ratio enable precise dead-time control, minimizing shoot-through risk at 200–500 kHz switching.

Use Scenario: Isolation switch between starter battery and auxiliary LiFePO₄ bank in Class 8 trucks and buses.

IC Role / Device Role / Timing Role: High-current main disconnect MOSFET controlled via isolated gate driver; rated for 50 A continuous and 200 A pulsed surge currents.

Use Value: 125 mJ E_AS withstands load dump transients and inductive kickback from alternator regulation faults without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PbF	R_DS(on) = 0.02 Ω @ -10 V; no AEC-Q101 qualification; R_thJC = 1.5 °C/W; TO-220 package.	Limited to non-automotive industrial use; higher thermal resistance requires larger heatsink for same power.	Use where cost sensitivity outweighs automotive qualification and thermal performance requirements.
STP55P04FP	R_DS(on) = 0.0085 Ω @ -10 V; AEC-Q101 qualified; TO-220FP package; lower I_D (-42 A) and E_AS (100 mJ).	Suitable for lower-energy inductive loads; smaller package limits PCB copper area for thermal spreading.	Select when board space is constrained and peak avalanche energy demand is below 100 mJ.

Compared with IRF4905PbF and STP55P04FP, SQM50P04-09L_GE3 uniquely combines AEC-Q101 compliance, 175 °C operation, 125 mJ E_AS, and 1 °C/W R_thJC in TO-263 - making it the only option qualified for high-reliability under-hood switching above 40 A continuous.

Availability

SQM50P04-09L_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, battery management systems, and industrial motor control requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQM50P04-09L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade qualification.

The SQM50P04-09L_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel family, engineered specifically for high-current, high-temperature switching in engine control, body electronics, and hybrid vehicle power systems.

FAQ

What is the maximum continuous drain current rating for SQM50P04-09L_GE3 at 125 °C case temperature?

The SQM50P04-09L_GE3 is rated for -50 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal management using ≥1"² copper area per the datasheet's thermal test condition, and reflects the device's ability to sustain high-current loads in under-hood environments without derating.

Is SQM50P04-09L_GE3 compatible with 5 V gate drive in automotive microcontroller applications?

Yes, SQM50P04-09L_GE3 delivers 0.0170 Ω R_DS(on) at V_GS = -4.5 V, making it fully compatible with standard 5 V automotive MCUs. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures strong turn-on with margin, and its low gate charge (96.5 nC typical) minimizes driver power consumption and switching losses.

Does SQM50P04-09L_GE3 have built-in avalanche ruggedness, and what is its rated single-pulse energy?

Yes, SQM50P04-09L_GE3 is 100 % UIS (Unclamped Inductive Switching) tested and rated for 125 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C. This ruggedness is critical for automotive applications involving inductive loads such as solenoids, relays, and motors where voltage spikes exceed V_DS rating.

What is the thermal resistance from junction to case (R_thJC) for SQM50P04-09L_GE3, and how does it impact heatsink design?

The SQM50P04-09L_GE3 has a guaranteed R_thJC of 1 °C/W, measured from junction to the exposed drain tab. This low value allows direct mounting of the tab to a chassis or heatsink, enabling >100 W power dissipation without additional thermal interface materials - significantly simplifying thermal design versus higher-R_thJC alternatives.

How is SQM50P04-09L_GE3 marked for traceability and authenticity verification?

SQM50P04-09L_GE3 features laser-marked top-side identification including "SQM50P04-09L", date code, factory code (e.g., "T" or "N"), and Vishay logo. Full traceability is supported via batch lot numbers aligned with Vishay's PPAP documentation and AEC-Q101 test reports, accessible through authorized distributors and Vishay's quality portal.

SQM50P04-09L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6045 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM50P04-09L_GE3 FAQ

1.How can I place an order for SQM50P04-09L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM50P04-09L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM50P04-09L_GE3 reliable?

The price and inventory of SQM50P04-09L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50P04-09L_GE3 is usually 5 days.

3.What payment methods are accepted for SQM50P04-09L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50P04-09L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM50P04-09L_GE3?

SQM50P04-09L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM50P04-09L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM50P04-09L_GE3?

For technical support, including SQM50P04-09L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50P04-09L_GE3 requirements.

6.How does Aetrix verify that SQM50P04-09L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM50P04-09L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50P04-09L_GE3 meets industry standards.

7.What is the process for return or replacement of SQM50P04-09L_GE3?

All SQM50P04-09L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50P04-09L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM50P04-09L_GE3 part is unused and in its original packaging.

Return procedure for SQM50P04-09L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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