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Vishay Siliconix SQM50P06-15L_GE3
- Part No.:
- SQM50P06-15L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM50P06-15L_GE3.pdf
- Description:
- MOSFET P-CHANNEL 60V 50A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:645
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Product details
Overview
SQM50P06-15L_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 0.015 Ω RDS(on) at VGS = -10 V, and -50 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and is housed in a TO-263 (D2PAK) package with low thermal resistance - used in high-reliability 12 V/24 V automotive power distribution and load switching.
For engineers reviewing the SQM50P06-15L_GE3 datasheet, SQM50P06-15L_GE3 pinout, SQM50P06-15L_GE3 application, or SQM50P06-15L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, -60 V VDS, 0.015 Ω RDS(on) @ -10 V, 100 % Rg and UIS tested performance, and suitability for high-side switching in engine control modules and body electronics.
Technical Context
This P-channel MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance and robust avalanche capability (EAS = 125 mJ). Its gate threshold voltage range of -1.5 V to -2.5 V enables reliable turn-on with standard logic-level gate drivers in high-side configurations.
The device features low gate charge (Qg = 103–155 nC), fast switching (td(on) = 13–20 ns, tf = 16–24 ns), and integrated source-drain diode with VSD = -0.9 to -1.5 V at -30 A - supporting synchronous rectification and bidirectional current handling in reverse-polarity protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Withstands reverse battery transients up to -60 V in automotive 12 V systems without breakdown. |
| RDS(on) @ VGS = -10 V | 0.015 Ω - Enables <1.5 W conduction loss at -50 A, critical for thermally constrained under-hood applications. |
| ID (continuous, TC = 25 °C) | -50 A - Supports high-current loads such as fuel pumps, radiator fans, and HVAC actuators. |
| Junction Temp Range | -55 °C to +175 °C - Qualified for under-hood operation per AEC-Q101, enabling placement near engines or exhausts. |
| RthJC | 1.0 °C/W - Low junction-to-case thermal resistance allows efficient heat transfer to heatsink or PCB copper pour. |
| Qg | 103–155 nC - Enables fast, low-loss switching with moderate gate drive strength (e.g., TC4427 or similar). |
| EAS | 125 mJ - Robust single-pulse avalanche energy rating supports inductive load switching without snubbers. |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection. Lead (Pb)-free and halogen-free per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab / Pin 2 (Drain) | Main current path output terminal | Exposed metal tab is electrically connected to drain; must be soldered to large copper area or heatsink for thermal management and low-inductance return path. |
| Pin 1 (Source) | Reference node for gate drive and current return | Connected to system ground or battery negative in high-side switch configuration; defines VGS reference point. |
| Pin 3 (Gate) | Control input for channel conduction | Requires negative VGS relative to source to turn on; driven by isolated or level-shifted gate driver in high-side applications. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity, and mechanical shock - suitable for safety-critical ECUs without additional qualification. |
| 100 % Rg and UIS tested | Each unit undergoes gate resistance screening and unclamped inductive switching stress test - ensures consistent switching behavior and ruggedness in real-world inductive loads. |
| TrenchFET® architecture | Delivers lowest possible RDS(on) × Qg figure-of-merit for P-channel devices - reduces both conduction and switching losses simultaneously. |
| Low RthJC = 1.0 °C/W | Enables >100 W power dissipation with modest heatsinking - eliminates need for bulky thermal solutions in space-constrained modules. |
| Integrated body diode | VSD = -0.9 to -1.5 V at -30 A - supports freewheeling in relay replacement and reverse-polarity protection without external diode. |
Applications
| Reverse Polarity Protection | High-Side Load Switch |
|---|---|
Use Scenario: Installed between battery and ECU input to block reverse battery connection during service or jump-start errors. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with gate tied to battery positive via resistor divider or active controller. Use Value: Eliminates 0.7 V silicon diode drop, reducing power loss and heat generation while maintaining full system voltage under normal operation. |
Use Scenario: Controls power delivery to fuel pump or cooling fan in engine bay, activated by microcontroller GPIO through gate driver. IC Role / Device Role / Timing Role: High-side switch with gate driven by isolated level shifter; conducts when VGS ≤ -1.5 V. Use Value: Enables single-supply control of loads referenced to battery positive - simplifies wiring and improves fault isolation vs. low-side switching. |
| Engine Control Module Power Distribution | Body Control Module Load Management |
Use Scenario: Distributes switched 12 V power to injectors, ignition coils, and sensors within ECU housing. IC Role / Device Role / Timing Role: High-current, high-temp P-channel switch with fast turn-off to prevent shoot-through in multi-phase drivers. Use Value: Supports 175 °C ambient operation and withstands load dump transients - meets ISO 7637-2 Pulse 5a requirements without derating. |
Use Scenario: Manages power to door locks, window motors, and interior lighting in BCM with centralized load monitoring. IC Role / Device Role / Timing Role: Current-sense enabled high-side switch (with external sense resistor) providing overcurrent and short-circuit protection. Use Value: Integrates robust avalanche energy (125 mJ) to survive motor stall events and inductive kickback without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PbF | RDS(on) = 0.02 Ω @ -10 V; TO-220 package; not AEC-Q101 qualified; RthJC = 1.7 °C/W | Limited to industrial/commercial environments; unsuitable for under-hood automotive deployment due to temp and qualification gaps. | Use only where AEC-Q101 is not required and board space permits larger TO-220 footprint. |
| STP55PF06 | RDS(on) = 0.014 Ω @ -10 V; TO-220FP package; AEC-Q101 qualified; RthJC = 1.4 °C/W; higher Qg (170 nC) | Compatible for same functional role but slower switching and less thermally efficient than SQM50P06-15L_GE3. | Prefer SQM50P06-15L_GE3 when minimizing gate drive power or maximizing thermal headroom is critical. |
Compared with IRF4905PbF and STP55PF06, SQM50P06-15L_GE3 delivers superior thermal performance (RthJC = 1.0 °C/W), lower gate charge, and optimized packaging for automated SMT assembly - making it the preferred choice for high-volume, high-reliability automotive power stages.
Availability
SQM50P06-15L_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, reverse polarity protection, and high-side load switching requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for SQM50P06-15L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, efficiency, and automotive-grade qualification.
The SQM50P06-15L_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET family, designed specifically for high-current, high-temperature switching in engine control, body electronics, and powertrain subsystems.
FAQ
What is the maximum continuous drain current rating for SQM50P06-15L_GE3 at 125 °C case temperature?
The SQM50P06-15L_GE3 supports -41 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package under sustained high-temperature operation, and must be applied in thermal design calculations for under-hood applications where case temperature exceeds 25 °C.
Is SQM50P06-15L_GE3 suitable for reverse polarity protection in 24 V commercial vehicle systems?
Yes, SQM50P06-15L_GE3 is suitable for 24 V reverse polarity protection: its -60 V VDS rating provides 2× margin over nominal 24 V plus ISO 7637-2 load dump peaks (up to -35 V), and its AEC-Q101 qualification ensures reliability in harsh vehicle environments. Gate drive must be referenced to the protected side to maintain proper VGS control.
Does SQM50P06-15L_GE3 have an integrated ESD protection diode on the gate?
No, SQM50P06-15L_GE3 does not include integrated gate ESD protection. The gate oxide is rated for ±20 V VGS, and external gate protection (e.g., Zener clamp or RC snubber) is recommended in systems exposed to ESD events or noisy harness environments - especially in automotive body modules with long cable runs.
What is the typical gate threshold voltage range for SQM50P06-15L_GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQM50P06-15L_GE3 is -1.5 V to -2.5 V. This low threshold enables turn-on with minimal negative gate drive, but requires careful gate driver selection to ensure full enhancement (VGS ≤ -10 V) for lowest RDS(on). In high-side configurations, level-shifting or isolated drivers must deliver sufficient negative swing relative to source potential.
Can SQM50P06-15L_GE3 replace N-channel MOSFETs in high-side switching applications?
No - SQM50P06-15L_GE3 is a P-channel device and cannot directly replace N-channel MOSFETs without redesigning the gate drive architecture. Unlike N-channel parts that require bootstrap or isolated high-side drivers, SQM50P06-15L_GE3 simplifies high-side control by allowing gate drive referenced to system ground, but trades off higher RDS(on) versus equivalent N-channel devices.
SQM50P06-15L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6120 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM50P06-15L_GE3 FAQ
1.How can I place an order for SQM50P06-15L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM50P06-15L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM50P06-15L_GE3 reliable?
The price and inventory of SQM50P06-15L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM50P06-15L_GE3 is usually 5 days.
3.What payment methods are accepted for SQM50P06-15L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM50P06-15L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM50P06-15L_GE3?
SQM50P06-15L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM50P06-15L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM50P06-15L_GE3?
For technical support, including SQM50P06-15L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM50P06-15L_GE3 requirements.
6.How does Aetrix verify that SQM50P06-15L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM50P06-15L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM50P06-15L_GE3 meets industry standards.
7.What is the process for return or replacement of SQM50P06-15L_GE3?
All SQM50P06-15L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM50P06-15L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM50P06-15L_GE3 part is unused and in its original packaging.
Return procedure for SQM50P06-15L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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