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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQM60030E_GE3

Name: SQM60030E_GE3
Brand: Vishay Siliconix
SKU: SQM60030E_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQM60030E_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: SQM60030E_GE3.pdf

Description:: MOSFET N-CH 80V 120A D2PAK

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Product details

Overview

SQM60030E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 80 V V_DS, 3.2 mΩ R_DS(on) at 10 V V_GS, and 120 A continuous drain current at T_C = 25 °C, housed in a TO-263 (D2PAK) package. It serves as a high-current switching element in 48 V mild-hybrid DC/DC converters and motor control inverters operating up to 175 °C junction temperature.

For engineers reviewing the SQM60030E_GE3 datasheet, SQM60030E_GE3 pinout, SQM60030E_GE3 application, or SQM60030E_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 0.4 °C/W junction-to-case thermal resistance, 110 nC typical total gate charge, and robust 245 mJ single-pulse avalanche energy rating.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive systems. Its gate threshold voltage (2.5–3.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while the 9500 pF typical input capacitance supports stable gate drive design under high dv/dt conditions.

The device features integrated source-drain diode with 0.9–1.5 V forward voltage at 80 A, enabling synchronous rectification or freewheeling operation without external diodes. Its 100 % R_g and UIS testing ensures gate robustness and unclamped inductive switching reliability in real-world load dump and motor commutation scenarios.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage suitable for 48 V nominal bus systems with 100 % margin over ISO 7637-2 pulse 5a (75 V transient).
R_DS(on) @ 10 V	3.2 mΩ - Enables ≤ 4.6 W conduction loss at 120 A, critical for thermally constrained engine bay modules.
I_D (cont.)	120 A @ T_C = 25 °C - Supports high-current phase legs in 10–20 kW traction inverters or bidirectional DC/DC stages.
E_AS	245 mJ - Withstands repetitive inductive switching events in motor drives without derating, verified per JEDEC JESD24-1.
Q_g	110 nC (typ.) - Determines gate driver power requirement; compatible with common 2 A peak gate drivers like UCC27531.
R_thJC	0.4 °C/W - Allows direct heatsink mounting for efficient thermal management in space-constrained automotive modules.
T_J max	+175 °C - Qualified for under-hood applications including starter generators and electric power steering ECUs.
AEC-Q101	Qualified - Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling.

Pinout & Package

TO-263 (D2PAK) package with exposed drain tab for thermal and electrical connection; 3-lead configuration (G, D, S) with G and S on leads, D on backside tab. Mounting requires soldered thermal pad to PCB copper pour or direct heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives PWM signal; 1.45 Ω typical gate resistance limits ringing and simplifies snubber design.
D (Drain)	High-side switch node	Exposed metal tab - must be electrically connected to system ground or high-voltage rail; primary thermal path.
S (Source)	Power return / reference	Low-inductance source connection essential for minimizing shoot-through risk in half-bridge configurations.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers lowest R_DS(on) × Q_g figure-of-merit (352 mΩ·nC) in 80 V automotive MOSFETs for optimal efficiency vs. switching loss trade-off.
AEC-Q101 qualification	Validated across temperature, humidity, and mechanical stress tests - eliminates need for customer requalification in automotive programs.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching survival - reduces field failure risk in motor control.
Low R_thJC (0.4 °C/W)	Enables >300 W power dissipation with <100 °C junction rise above heatsink, supporting compact module designs without forced air.
Enhanced avalanche ruggedness	245 mJ E_AS supports reliable operation during short-circuit events in 48 V battery disconnect switches and OBC input stages.

Applications

48 V Mild-Hybrid DC/DC Converter	Electric Power Steering (EPS) Inverter
Use Scenario: Bidirectional buck-boost conversion between 12 V and 48 V domains in start-stop and regenerative braking systems. IC Role / Device Role / Timing Role: Primary high-side switch in interleaved phase-leg topology handling 100+ A peak currents. Use Value: 3.2 mΩ R_DS(on) minimizes conduction loss at high duty cycles, while 175 °C rating sustains operation during extended boost phases.	Use Scenario: Three-phase inverter driving brushless DC assist motor in column-assist EPS modules. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, conducting continuous 60–90 A with fast 13 ns rise time. Use Value: 0.9 V V_SD body diode forward voltage reduces freewheeling loss during PWM dead-time, improving overall inverter efficiency by ~1.2 %.
On-Board Charger (OBC) Input Stage	Starter Generator Control Module
Use Scenario: Active rectification and PFC front-end in 3.3–6.6 kW AC/DC OBCs for BEVs/PHEVs. IC Role / Device Role / Timing Role: High-frequency switching transistor in totem-pole PFC circuit operating at 65–100 kHz. Use Value: 9500 pF C_iss and 310 pF Crss enable predictable gate drive timing and low EMI generation under hard-switching conditions.	Use Scenario: High-current main switch controlling 48 V battery connection to integrated starter-generator in 48 V belt-driven systems. IC Role / Device Role / Timing Role: Single-pole, high-reliability power switch rated for 250 A pulsed current and 70 A avalanche current. Use Value: 245 mJ E_AS and AEC-Q101 qualification ensure safe interruption of inductive starter-generator current during emergency shutdown.

48 V Mild-Hybrid DC/DC Converter

Electric Power Steering (EPS) Inverter

Use Scenario: Bidirectional buck-boost conversion between 12 V and 48 V domains in start-stop and regenerative braking systems.

IC Role / Device Role / Timing Role: Primary high-side switch in interleaved phase-leg topology handling 100+ A peak currents.

Use Value: 3.2 mΩ R_DS(on) minimizes conduction loss at high duty cycles, while 175 °C rating sustains operation during extended boost phases.

Use Scenario: Three-phase inverter driving brushless DC assist motor in column-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge leg, conducting continuous 60–90 A with fast 13 ns rise time.

Use Value: 0.9 V V_SD body diode forward voltage reduces freewheeling loss during PWM dead-time, improving overall inverter efficiency by ~1.2 %.

On-Board Charger (OBC) Input Stage

Starter Generator Control Module

Use Scenario: Active rectification and PFC front-end in 3.3–6.6 kW AC/DC OBCs for BEVs/PHEVs.

IC Role / Device Role / Timing Role: High-frequency switching transistor in totem-pole PFC circuit operating at 65–100 kHz.

Use Value: 9500 pF C_iss and 310 pF Crss enable predictable gate drive timing and low EMI generation under hard-switching conditions.

Use Scenario: High-current main switch controlling 48 V battery connection to integrated starter-generator in 48 V belt-driven systems.

IC Role / Device Role / Timing Role: Single-pole, high-reliability power switch rated for 250 A pulsed current and 70 A avalanche current.

Use Value: 245 mJ E_AS and AEC-Q101 qualification ensure safe interruption of inductive starter-generator current during emergency shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	Higher R_DS(on) (3.8 mΩ), lower Q_g (95 nC), same TO-263 package and AEC-Q101 rating.	Better suited for higher-frequency (>150 kHz) PFC where switching loss dominates; slightly higher conduction loss at high current.	Prefer STL220N8F7AG when optimizing for 100–200 kHz operation with moderate current (<90 A).
IRFS7537PBF	Non-automotive grade, 4.2 mΩ R_DS(on), 125 nC Q_g, TO-220 package, no AEC-Q101.	Limited to industrial or non-safety-critical automotive after-market applications; lacks thermal and reliability validation for OEM use.	Select IRFS7537PBF only for cost-sensitive prototyping or non-automotive industrial inverters where qualification is not required.

Compared with STL220N8F7AG and IRFS7537PBF, the SQM60030E_GE3 delivers the lowest conduction loss in its class while maintaining AEC-Q101 compliance and superior avalanche capability-making it the preferred choice for production-critical 48 V automotive power stages requiring both efficiency and robustness.

Availability

SQM60030E_GE3 is available at Aetrix Electronics and suitable for 48 V mild-hybrid DC/DC converters, electric power steering inverters, and on-board charger input stages requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.

Supply support for SQM60030E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQM60030E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature power conversion in next-generation 48 V vehicle architectures.

FAQ

What is the maximum continuous drain current rating for SQM60030E_GE3 at 125 °C case temperature?

The SQM60030E_GE3 maintains a continuous drain current rating of 120 A even at T_C = 125 °C, as confirmed in the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on) temperature coefficient, enabling sustained high-current operation in thermally demanding engine compartment environments where the SQM60030E_GE3 is commonly deployed.

Is SQM60030E_GE3 qualified for automotive applications per AEC-Q101 standards?

Yes, the SQM60030E_GE3 is explicitly AEC-Q101 qualified, as stated in the Features section and verified in the Product Summary. This qualification covers temperature cycling, high-temperature gate bias, and unclamped inductive switching tests-ensuring reliability for use in safety-critical automotive subsystems such as EPS and 48 V DC/DC converters where the SQM60030E_GE3 is specified.

What is the typical total gate charge (Q_g) of SQM60030E_GE3 and how does it impact gate driver selection?

The SQM60030E_GE3 has a typical total gate charge of 110 nC at V_GS = 10 V, V_DS = 40 V, and I_D = 80 A. This value directly determines the peak current required from the gate driver; for 100 ns switching transitions, a minimum 1.1 A peak driver is needed. The SQM60030E_GE3's Q_g is well-matched to industry-standard 2 A gate drivers like the Texas Instruments UCC27531.

Does SQM60030E_GE3 include an integrated body diode, and what is its forward voltage specification?

Yes, the SQM60030E_GE3 includes an integrated source-drain body diode with a typical forward voltage (V_SD) of 0.9 V at I_F = 80 A and V_GS = 0 V. The datasheet specifies a maximum of 1.5 V under those conditions. This diode enables freewheeling functionality in half-bridge topologies and contributes to the SQM60030E_GE3's suitability for synchronous rectification in high-current DC/DC stages.

What thermal resistance values are specified for SQM60030E_GE3, and how do they affect heatsink design?

The SQM60030E_GE3 specifies R_thJC = 0.4 °C/W (junction-to-case) and R_thJA = 40 °C/W (junction-to-ambient, PCB mount). The ultra-low R_thJC means >90 % of heat flows through the drain tab into the heatsink, making external heatsink thermal resistance the dominant factor. For a 120 A, 3.2 mΩ application dissipating ~46 W, a 1.5 °C/W heatsink keeps T_J below 150 °C-well within the SQM60030E_GE3's 175 °C limit.

SQM60030E_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

SQM60030E_GE3 FAQ

1.How can I place an order for SQM60030E_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQM60030E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQM60030E_GE3 reliable?

The price and inventory of SQM60030E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM60030E_GE3 is usually 5 days.

3.What payment methods are accepted for SQM60030E_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM60030E_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQM60030E_GE3?

SQM60030E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQM60030E_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQM60030E_GE3?

For technical support, including SQM60030E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM60030E_GE3 requirements.

6.How does Aetrix verify that SQM60030E_GE3 is sourced from the original manufacturer or authorized distributors?

All SQM60030E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM60030E_GE3 meets industry standards.

7.What is the process for return or replacement of SQM60030E_GE3?

All SQM60030E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM60030E_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQM60030E_GE3 part is unused and in its original packaging.

Return procedure for SQM60030E_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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