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Vishay Siliconix SQM60N06-15_GE3
- Part No.:
- SQM60N06-15_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM60N06-15_GE3.pdf
- Description:
- MOSFET N-CH 60V 56A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:8,876
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Product details
Overview
SQM60N06-15_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 56 A continuous drain current at 25 °C, and 0.015 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature, features AEC-Q101 qualification, and is used in high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQM60N06-15_GE3 datasheet, SQM60N06-15_GE3 pinout, SQM60N06-15_GE3 application, or SQM60N06-15_GE3 equivalent, key selection criteria include its low RDS(on) at elevated temperature, 100 % Rg and UIS tested reliability, TO-263 (D2PAK) thermal performance, and AEC-Q101 compliance for under-hood automotive use.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching. Its gate charge profile (Qg = 33–50 nC, Qgd = 7.4 nC) supports efficient hard-switching in synchronous buck topologies with minimal Miller-induced shoot-through risk.
The device integrates a robust body diode with VSD = 0.9–1.5 V at IF = 30 A and is characterized for unclamped inductive switching (UIS), enabling reliable operation in inductive load circuits without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V automotive systems and 24 V industrial rails. |
| RDS(on) @ VGS = 10 V | 0.015 Ω - Enables <1 W conduction loss at 30 A, critical for thermally constrained power stages. |
| ID (continuous, TC = 25 °C) | 56 A - Supports high-current loads such as fuel pump drivers and HVAC blower motors. |
| Junction Temp Range | −55 to +175 °C - Validated for under-hood environments including engine control units and transmission control modules. |
| RthJC | 1.4 °C/W - Low junction-to-case thermal resistance enables direct heatsink mounting for high-power dissipation. |
| AEC-Q101 Qualified | Yes - Meets stress test requirements for automotive electronics, including temperature cycling and HTRB. |
| Qg / Qgd | 33–50 nC / 7.4 nC - Enables fast turn-on/turn-off with moderate gate drive strength (e.g., 1–2 A peak). |
Pinout & Package
Package: TO-263 (D2PAK), surface-mount, 3-lead, with exposed drain tab for thermal and electrical connection to PCB heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤±20 V drive; low input capacitance (Ciss = 1983–2480 pF) eases gate driver selection. |
| Pin 2 (D) | Drain | High-side switch node; electrically and thermally connected to large copper pad on backside of package. |
| Pin 3 (S) | Source | Power return path; referenced to gate drive ground; defines common source node for half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × area efficiency for compact, high-current power stages. |
| AEC-Q101 qualification | Validates reliability for automotive applications including engine control, ADAS power supplies, and battery management. |
| 100 % Rg and UIS tested | Ensures gate robustness and avalanche energy handling (EAS = 42 mJ) without derating in production. |
| Halogen-free & RoHS compliant | Meets automotive environmental standards (IEC 61249-2-21) and global regulatory requirements. |
| Low RthJC (1.4 °C/W) | Enables >80 W continuous power dissipation with standard heatsinking, reducing need for forced air cooling. |
Applications
| Engine Control Unit (ECU) Power Stage | Automotive DC-DC Converter |
|---|---|
Use Scenario: High-side switching for solenoid drivers and injector pre-drivers in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch controlling 12–48 V inductive loads with precise PWM timing and fast transient response. Use Value: Low RDS(on) minimizes heat generation during extended duty cycles; AEC-Q101 ensures long-term reliability in high-vibration, high-temperature engine bays. | Use Scenario: Synchronous rectifier in 48 V-to-12 V bidirectional DC-DC converters for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, operating at 200–500 kHz with tight dead-time control. Use Value: Low Qgd/Qg ratio reduces switching losses and improves light-load efficiency; 175 °C rating supports compact thermal design. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Half-bridge leg in three-phase inverter driving 24 V EPS brushless DC motor. IC Role / Device Role / Timing Role: High-current, high-reliability switching element handling peak currents up to 227 A (pulsed). Use Value: Robust UIS capability withstands motor phase commutation spikes; TO-263 package provides mechanical stability under shock/vibration. | Use Scenario: Primary-side switch in auxiliary flyback converter powering OBC control logic and gate drivers. IC Role / Device Role / Timing Role: 60 V-rated primary switch supporting wide-input (9–36 V) operation with high efficiency across load range. Use Value: Tight VGS(th) distribution (2.5–3.5 V) ensures consistent turn-on behavior across temperature; low Coss improves ZVS compatibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | 60 V, 220 A pulsed, RDS(on) = 1.3 mΩ @ 10 V; PowerFLAT 8×8 package; lower RDS(on) but higher Qg (115 nC). | Better suited for high-frequency, high-current synchronous rectification where board space is limited. | Select STL220N6F7AG only if layout allows PowerFLAT 8×8 footprint and gate drive can support higher Qg. |
| IRF1404ZPBF | 40 V, 195 A pulsed, RDS(on) = 3.4 mΩ @ 10 V; TO-220 package; not AEC-Q101 qualified. | Intended for industrial UPS and non-automotive power supplies requiring higher current but lower voltage rating. | IRF1404ZPBF is not suitable for automotive applications due to lack of AEC-Q101 qualification and lower VDS margin. |
Compared with STL220N6F7AG and IRF1404ZPBF, SQM60N06-15_GE3 offers balanced performance for automotive 48 V systems: sufficient voltage headroom, AEC-Q101 assurance, TO-263 thermal scalability, and gate drive compatibility with standard 1–2 A drivers-making it optimal for ECU, EPS, and OBC auxiliary power designs.
Availability
SQM60N06-15_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, engine control, and electric power steering applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SQM60N06-15_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQM60N06-15_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability, high-temperature power switching in engine compartments and ADAS subsystems.
FAQ
What is the maximum continuous drain current rating for SQM60N06-15_GE3 at 125 °C case temperature?
The SQM60N06-15_GE3 supports 32 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-263 package and must be validated against actual PCB layout and heatsinking in the target application. The SQM60N06-15_GE3 datasheet confirms this value under "Continuous Drain Current" with footnote indicating case temperature dependence.
Is SQM60N06-15_GE3 suitable for use in synchronous rectification circuits?
Yes, SQM60N06-15_GE3 is suitable for synchronous rectification due to its low RDS(on) (0.015 Ω), fast switching parameters (tr = 12–18 ns, tf = 7–11 ns), and low reverse transfer capacitance (Crss = 125–160 pF). Its body diode forward voltage (VSD = 0.9–1.5 V) and UIS-tested ruggedness further support reliable operation in flyback and LLC topologies. The SQM60N06-15_GE3 is commonly deployed in 48 V automotive DC-DC converters for this purpose.
Does SQM60N06-15_GE3 have a specified gate threshold voltage range?
Yes, the SQM60N06-15_GE3 has a guaranteed gate threshold voltage range of 2.5 V to 3.5 V at VDS = VGS and ID = 250 μA, per its Electrical Specifications table. This tight VGS(th) distribution ensures predictable turn-on behavior across temperature and batch variation, critical for robust PWM control in automotive systems. The SQM60N06-15_GE3 datasheet lists this parameter under "Gate-Source Threshold Voltage".
What is the thermal resistance from junction to ambient for SQM60N06-15_GE3 when mounted on a 1" square FR-4 PCB?
The junction-to-ambient thermal resistance (RthJA) for SQM60N06-15_GE3 is 40 °C/W when mounted on a 1" square FR-4 PCB (2 oz. copper, double-sided), as stated in the Thermal Resistance Ratings table. This value assumes standard PCB mounting conditions and serves as a baseline for thermal design; actual RthJA will improve significantly with additional copper area or heatsinking. The SQM60N06-15_GE3 specification sheet explicitly cites this condition in Note c.
How is the avalanche capability of SQM60N06-15_GE3 characterized?
The SQM60N06-15_GE3 is 100 % tested for unclamped inductive switching (UIS) and specifies single-pulse avalanche ratings: IAS = 29 A (L = 0.1 mH) and EAS = 42 mJ. These values are measured under standardized pulse conditions (pulse width ≤ 300 μs, duty cycle ≤ 2 %) and confirm the device's ability to absorb inductive energy without failure. The SQM60N06-15_GE3 datasheet documents these in the Absolute Maximum Ratings section with associated test notes.
SQM60N06-15_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM60N06-15_GE3 FAQ
1.How can I place an order for SQM60N06-15_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM60N06-15_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM60N06-15_GE3 reliable?
The price and inventory of SQM60N06-15_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM60N06-15_GE3 is usually 5 days.
3.What payment methods are accepted for SQM60N06-15_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM60N06-15_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM60N06-15_GE3?
SQM60N06-15_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM60N06-15_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM60N06-15_GE3?
For technical support, including SQM60N06-15_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM60N06-15_GE3 requirements.
6.How does Aetrix verify that SQM60N06-15_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM60N06-15_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM60N06-15_GE3 meets industry standards.
7.What is the process for return or replacement of SQM60N06-15_GE3?
All SQM60N06-15_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM60N06-15_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM60N06-15_GE3 part is unused and in its original packaging.
Return procedure for SQM60N06-15_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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