My Inquiry
My Account
Vishay Siliconix SQM85N15-19_GE3
- Part No.:
- SQM85N15-19_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
SQM85N15-19_GE3.pdf
- Description:
- MOSFET N-CH 150V 85A TO263
- Quantity:
- Payment:
- Shipping:
Inventory:2,965
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQM85N15-19_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 150 V drain-source voltage, 85 A continuous drain current at TC = 25 °C, and 0.019 Ω RDS(on) at VGS = 10 V and ID = 30 A. It operates up to 175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQM85N15-19_GE3 datasheet, SQM85N15-19_GE3 pinout, SQM85N15-19_GE3 application, or SQM85N15-19_GE3 equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 120 nC total gate charge, 100% UIS testing, TO-263 (D2PAK) package with thick leads, and automotive qualification status.
Technical Context
This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and high avalanche ruggedness. Its gate threshold voltage (2.5–3.5 V) enables robust drive compatibility with 3.3 V and 5 V logic controllers, while the 1.6 Ω typical gate resistance supports predictable switching timing in high-frequency PWM circuits.
The device integrates a body diode with 0.9–1.5 V forward voltage at IF = 85 A and VGS = 0 V, and features 135 mJ single-pulse avalanche energy rating. Thermal design is enabled by its 0.4 °C/W RthJC and 40 °C/W RthJA (PCB mount), supporting high-power operation in compact automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage for 12 V/24 V/48 V automotive systems with load dump margin |
| RDS(on) | 0.019 Ω @ VGS = 10 V, ID = 30 A - Enables <1.5 W conduction loss at 85 A in optimized thermal layout |
| ID (continuous) | 85 A @ TC = 25 °C - Supports high-current motor phase switches and bidirectional DC-DC stages |
| TJ range | −55 to +175 °C - Validated for under-hood environments including engine control units and battery disconnects |
| Qg | 120 nC max @ VGS = 10 V - Determines gate driver power requirement and switching loss in 20–100 kHz converters |
| EAS | 135 mJ - Withstands inductive turn-off energy without failure in solenoid or motor winding control |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics per JESD22 and JESD47 standards |
Pinout & Package
Package: TO-263 (D2PAK), 3-lead, thick-lead variant (Facility Code N), with exposed drain tab for thermal mounting. Dimensions per Doc. #71198: D = 8.6–9.0 mm, E = 10.15–10.55 mm, L = 1.9–2.5 mm, heat sink tab coplanar within 0.1 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power output / high-side switch node | Exposed metal tab - must be soldered to PCB copper pour or heatsink for thermal path; electrically connected to internal die backside |
| G (Gate) | Control input | High-impedance MOS gate requiring <100 nA leakage; driven via gate resistor to manage dV/dt and ringing |
| S (Source) | Power return / reference node | Low-inductance source connection critical for stable switching; forms common reference for gate drive and current sensing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers 0.019 Ω RDS(on) in TO-263 package - reduces conduction loss vs. planar MOSFETs of same size |
| 100% UIS tested | Each unit validated for unclamped inductive switching - ensures reliability in motor and solenoid drive without external snubbers |
| Low RthJC (0.4 °C/W) | Enables >300 W power dissipation with modest heatsinking - suitable for space-constrained automotive modules |
| AEC-Q101 qualification | Validated for automotive temperature cycling, HTRB, and ESD - required for powertrain and chassis control applications |
| Body diode VF = 0.9–1.5 V | Supports synchronous rectification or freewheeling in half-bridge topologies without external diode |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
|
Use Scenario: High-current H-bridge driving brushed or brushless steering motors with peak loads up to 85 A. IC Role / Device Role / Timing Role: Low-side and high-side switching element in dual-phase motor driver stage. Use Value: 175 °C rating and AEC-Q101 compliance ensure uninterrupted operation during extended engine bay thermal exposure. |
Use Scenario: Primary-side switch in bi-directional buck-boost converter linking 12 V and 48 V vehicle domains. IC Role / Device Role / Timing Role: Main power switch handling 85 A continuous current with fast turn-on/off for 50–100 kHz operation. Use Value: 135 mJ EAS and 120 nC Qg enable efficient, robust switching under transient load dumps and regenerative braking events. |
| Automotive Battery Disconnect Unit (BDU) | Onboard Charger (OBC) Input Stage |
|
Use Scenario: Solid-state replacement for mechanical contactors in high-voltage battery isolation circuits. IC Role / Device Role / Timing Role: Single-pole, high-current main disconnect switch with integrated current sensing capability. Use Value: 150 V VDS and 0.019 Ω RDS(on) support 400 V system derating while minimizing I²R heating during sustained 85 A operation. |
Use Scenario: AC-DC PFC boost switch or DC-DC isolation stage switch in EV onboard chargers. IC Role / Device Role / Timing Role: High-efficiency power switch operating at elevated ambient temperatures near transformer cores. Use Value: 0.4 °C/W RthJC allows direct thermal coupling to aluminum baseplate - eliminates need for thermal interface material in sealed OBC enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N15F7AG | 150 V, 220 A, 1.6 mΩ RDS(on), TO-263 - lower RDS(on) but higher Qg (160 nC) and larger die area | Better conduction efficiency at >100 A; less suitable for space-constrained layouts due to larger footprint | Select when ultra-low conduction loss dominates over gate drive complexity and board area |
| IXTH86N15L2 | 150 V, 86 A, 18 mΩ RDS(on), TO-247 - higher RthJC (0.65 °C/W), no AEC-Q101 qualification | Higher thermal resistance requires larger heatsink; not approved for automotive safety-critical systems | Select only for industrial or non-automotive applications where qualification is not mandated |
Compared with STL220N15F7AG and IXTH86N15L2, SQM85N15-19_GE3 offers balanced trade-offs: AEC-Q101 compliance, proven 175 °C operation, and optimized 0.019 Ω/120 nC ratio for automotive power stages where reliability, thermal density, and qualification converge.
Availability
SQM85N15-19_GE3 is available at Aetrix Electronics and suitable for electric power steering, 48 V mild hybrid converters, and battery disconnect units requiring stable component supply across automotive production lifecycles.
Supply support for SQM85N15-19_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
SQM85N15-19_GE3 belongs to Vishay's automotive-qualified TrenchFET® family, engineered specifically for high-reliability, high-temperature power switching in engine control, electrified chassis, and energy storage systems.
FAQ
What is the maximum continuous drain current rating for SQM85N15-19_GE3 at 125 °C case temperature?
The SQM85N15-19_GE3 supports 50 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-263 package and ensures safe operation in high-ambient automotive environments. The device maintains 0.039 Ω RDS(on) at this condition, enabling predictable power loss calculation for thermal design.
Is SQM85N15-19_GE3 qualified for automotive use, and what standard does it meet?
Yes, SQM85N15-19_GE3 is AEC-Q101 qualified, verified per the Automotive Electronics Council stress test requirements for discrete semiconductors. The qualification includes HTGB, HTRB, temperature cycling, and unclamped inductive switching tests. Documentation confirms "Parametric verification ongoing" as of Rev. E (Dec. 2015), and Vishay maintains full qualification records for this part number.
What is the gate threshold voltage range for SQM85N15-19_GE3, and how does it affect drive circuit design?
The gate threshold voltage (VGS(th)) for SQM85N15-19_GE3 is 2.5–3.5 V at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while providing noise immunity against spurious gate excitation. Designers should apply ≥10 V VGS to achieve the specified 0.019 Ω RDS(on) and avoid linear-mode operation during switching transitions.
Does SQM85N15-19_GE3 include an integrated body diode, and what are its key characteristics?
Yes, SQM85N15-19_GE3 incorporates a monolithic body diode with forward voltage of 0.9–1.5 V at IF = 85 A and VGS = 0 V. Its reverse recovery time and Qrr are not explicitly specified, but the device is 100% UIS tested, confirming robustness during inductive freewheeling. This diode supports synchronous rectification and fault-current paths in half-bridge configurations without external components.
What is the thermal resistance from junction to case (RthJC) for SQM85N15-19_GE3, and why is it critical in automotive designs?
The junction-to-case thermal resistance (RthJC) for SQM85N15-19_GE3 is 0.4 °C/W, measured from die junction to the exposed drain tab. This low value is essential for automotive applications because it enables efficient heat transfer to heatsinks or PCB copper layers - critical for maintaining ≤175 °C junction temperature in confined engine-bay spaces where ambient can exceed 125 °C. It directly determines maximum sustainable power dissipation.
SQM85N15-19_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6285 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
SQM85N15-19_GE3 FAQ
1.How can I place an order for SQM85N15-19_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQM85N15-19_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQM85N15-19_GE3 reliable?
The price and inventory of SQM85N15-19_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQM85N15-19_GE3 is usually 5 days.
3.What payment methods are accepted for SQM85N15-19_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQM85N15-19_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQM85N15-19_GE3?
SQM85N15-19_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQM85N15-19_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQM85N15-19_GE3?
For technical support, including SQM85N15-19_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQM85N15-19_GE3 requirements.
6.How does Aetrix verify that SQM85N15-19_GE3 is sourced from the original manufacturer or authorized distributors?
All SQM85N15-19_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQM85N15-19_GE3 meets industry standards.
7.What is the process for return or replacement of SQM85N15-19_GE3?
All SQM85N15-19_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQM85N15-19_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQM85N15-19_GE3 part is unused and in its original packaging.
Return procedure for SQM85N15-19_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQM85N15-19_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
