Vishay Siliconix SQP100N04-3M6_GE3
- Part No.:
- SQP100N04-3M6_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP100N04-3M6_GE3.pdf
- Description:
- MOSFET N-CH 40V 100A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,458
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Product details
Overview
SQP100N04-3M6_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 100 A continuous drain current at 25 °C, and 0.0036 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-220AB package with low thermal resistance (RthJC = 1.25 °C/W), targeting high-current DC motor control and 12 V/24 V automotive power switching.
For engineers reviewing the SQP100N04-3M6_GE3 datasheet, SQP100N04-3M6_GE3 pinout, SQP100N04-3M6_GE3 application, or SQP100N04-3M6_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS tested reliability, 175 °C operation, and validated performance under pulsed avalanche stress (EAS = 180 mJ).
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive loads. Its gate threshold voltage (VGS(th)) is tightly specified at 2.5–3.5 V, enabling robust drive compatibility with standard 3.3 V and 5 V logic-level controllers when used with appropriate gate drivers.
The device features integrated source-drain diode with VSD = 0.9–1.5 V at IF = 70 A and supports repetitive unclamped inductive switching (UIS) with guaranteed testing. Thermal design is enabled by its low RthJC and defined RthJA = 40 °C/W on 1"² FR-4 PCB - critical for engine bay and transmission control modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive systems with load dump margin. |
| RDS(on) @ VGS = 10 V | 0.0036 Ω - Enables ≤3.6 W conduction loss at 100 A, reducing heatsink requirements. |
| ID Continuous @ TC = 25 °C | 100 A - Supports high-power solenoid, fan, and pump drivers without parallel devices. |
| EAS | 180 mJ - Validated single-pulse avalanche energy for inductive load turn-off safety. |
| TJ Operating Range | −55 to +175 °C - Meets under-hood temperature requirements per AEC-Q101 Grade 0. |
| Qg | 90–135 nC - Defines gate driver current demand for <20 ns rise time with 1 Ω source impedance. |
| RthJC | 1.25 °C/W - Enables direct heatsink mounting for >40 W power dissipation at ΔT = 50 °C. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead configuration. Mounting hole accommodates mechanical heatsink attachment. Tab is electrically connected to drain terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat transfer surface | Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink. |
| Source | Power return path / reference node for gate drive | Low-inductance connection point for shunt sensing and gate driver ground referencing. |
| Gate | Control input for channel conduction | High-impedance MOS gate requiring <2.8 Ω series resistance to damp ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UHAST - no derating required for Grade 0 applications. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failure risk in motor drives. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size - improves power density in space-constrained ECUs. |
| Low Ciss/Coss ratio | 5700–7200 pF Ciss, 600–750 pF Coss - enables efficient zero-voltage switching (ZVS) in soft-switched topologies. |
| 175 °C maximum TJ | Supports operation in proximity to exhaust manifolds or turbochargers without thermal shutdown. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 100 A and 1 ms pulse widths. IC Role / Device Role / Timing Role: Main power switch replacing mechanical relay; provides precise PWM-controlled injection timing and diagnostics via current sensing. Use Value: 0.0036 Ω RDS(on) minimizes injector coil heating and enables 100 % duty cycle operation at full load without thermal throttling. | Use Scenario: Variable-speed control of 24 V HVAC blower motors in passenger cabin, requiring bidirectional current handling and reverse polarity protection. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration; handles regenerative braking energy via integrated body diode. Use Value: 180 mJ EAS rating ensures safe turn-off during sudden motor deceleration without external snubbers. |
| Transmission Control Module Solenoid Driver | Commercial Vehicle Air Brake Compressor Clutch |
Use Scenario: Driving 40 V-rated linear solenoids in automatic transmission valve bodies, operating continuously at 125 °C ambient. IC Role / Device Role / Timing Role: Low-loss power stage delivering regulated current to proportional pressure control solenoids. Use Value: RDS(on) drift limited to 2× nominal (0.0072 Ω) at 175 °C ensures stable current regulation across full temperature range. | Use Scenario: Engaging 24 V air compressor clutch in heavy-duty trucks, subject to vibration, wide temperature swings, and frequent cycling. IC Role / Device Role / Timing Role: Robust main switch with integrated avalanche capability to absorb inductive kickback during disengagement. Use Value: AEC-Q101 qualification and 100 % UIS testing guarantee reliable clutch engagement over 100,000 cycles in harsh environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | 40 V, 220 A, RDS(on) = 0.0017 Ω @ 10 V, PowerFLAT 8x8 package | Higher current rating but surface-mount only; no through-hole option | Select when board space is constrained and thermal interface allows direct copper pad mounting. |
| IRF1404ZPBF | 40 V, 180 A, RDS(on) = 0.0040 Ω @ 10 V, TO-220 package, non-AEC-Q101 | Lacks automotive qualification and 175 °C rating; lower EAS (120 mJ) | Acceptable for industrial 12 V motor controls where AEC-Q101 is not mandated. |
Compared with STL220N4F7AG and IRF1404ZPBF, SQP100N04-3M6_GE3 uniquely balances AEC-Q101 compliance, 175 °C operation, TO-220 through-hole reliability, and 0.0036 Ω RDS(on) - making it optimal for cost-sensitive, thermally demanding automotive power stages where solder joint integrity is critical.
Availability
SQP100N04-3M6_GE3 is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor drives, and commercial vehicle brake system power switching requiring stable component supply across extended production lifecycles.
Supply support for SQP100N04-3M6_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix designs and manufactures discrete semiconductors with emphasis on power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP100N04-3M6_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-reliability 12 V/24 V power distribution and motor control in extreme-temperature environments.
FAQ
What is the gate threshold voltage range for SQP100N04-3M6_GE3?
The gate threshold voltage (VGS(th)) for SQP100N04-3M6_GE3 is specified as 2.5 V minimum, 3.0 V typical, and 3.5 V maximum at ID = 250 μA. This tight range ensures consistent turn-on behavior across temperature and process variation, supporting reliable interfacing with both 3.3 V and 5 V microcontroller outputs when paired with appropriate gate drivers.
Is SQP100N04-3M6_GE3 suitable for use in high-temperature under-hood applications?
Yes, SQP100N04-3M6_GE3 is rated for junction temperatures from −55 °C to +175 °C and is AEC-Q101 qualified for automotive use. Its RDS(on) remains stable up to 175 °C (max 0.0072 Ω), and thermal resistance RthJC = 1.25 °C/W enables effective heatsinking - making it suitable for engine control, transmission, and turbocharger-mounted modules.
Does SQP100N04-3M6_GE3 have avalanche capability, and is it production-tested?
Yes, SQP100N04-3M6_GE3 is rated for 60 A single-pulse avalanche current (IAS) and 180 mJ single-pulse avalanche energy (EAS). Crucially, it undergoes 100 % unclamped inductive switching (UIS) testing during production - a key reliability screen for automotive inductive load switching applications like fuel injectors and solenoids.
What is the maximum continuous drain current for SQP100N04-3M6_GE3 at 125 °C case temperature?
The maximum continuous drain current for SQP100N04-3M6_GE3 is 74 A at TC = 125 °C, as defined in the Absolute Maximum Ratings table. This derating reflects thermal limits under sustained high-temperature operation and must be applied in thermal design calculations alongside RthJC = 1.25 °C/W and system heatsink performance.
How does the TO-220AB package of SQP100N04-3M6_GE3 support thermal management?
The TO-220AB package of SQP100N04-3M6_GE3 features an isolated metal tab directly connected to the drain, enabling low-thermal-resistance mounting to external heatsinks. With RthJC = 1.25 °C/W and a dedicated heatsink mounting hole, it supports >40 W continuous power dissipation when properly heatsunk - critical for high-duty-cycle automotive power stages.
SQP100N04-3M6_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 120W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP100N04-3M6_GE3 FAQ
1.How can I place an order for SQP100N04-3M6_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP100N04-3M6_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP100N04-3M6_GE3 reliable?
The price and inventory of SQP100N04-3M6_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP100N04-3M6_GE3 is usually 5 days.
3.What payment methods are accepted for SQP100N04-3M6_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP100N04-3M6_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP100N04-3M6_GE3?
SQP100N04-3M6_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP100N04-3M6_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP100N04-3M6_GE3?
For technical support, including SQP100N04-3M6_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP100N04-3M6_GE3 requirements.
6.How does Aetrix verify that SQP100N04-3M6_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP100N04-3M6_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP100N04-3M6_GE3 meets industry standards.
7.What is the process for return or replacement of SQP100N04-3M6_GE3?
All SQP100N04-3M6_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP100N04-3M6_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP100N04-3M6_GE3 part is unused and in its original packaging.
Return procedure for SQP100N04-3M6_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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