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Vishay Siliconix SQP100P06-9M3L_GE3
- Part No.:
- SQP100P06-9M3L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP100P06-9M3L_GE3.pdf
- Description:
- MOSFET P-CH 60V 100A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,035
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Product details
Overview
SQP100P06-9M3L_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 100 A continuous drain current at TC = 25 °C, and RDS(on) of 9.3 mΩ at VGS = -10 V. It features TrenchFET® technology, AEC-Q101 qualification, and operates up to +175 °C junction temperature. This device serves as a high-current power switch in 12 V/24 V automotive load management systems including battery disconnect and reverse polarity protection.
For engineers reviewing the SQP100P06-9M3L_GE3 datasheet, SQP100P06-9M3L_GE3 pinout, SQP100P06-9M3L_GE3 application, or SQP100P06-9M3L_GE3 equivalent, key selection criteria include its -60 V VDS rating, low 9.3 mΩ RDS(on) at -10 V, 175 °C TJ max, TO-220AB package thermal performance (RthJC = 0.8 °C/W), and AEC-Q101 qualification status for under-hood use.
Technical Context
This MOSFET uses trench-gate silicon process architecture to achieve low on-resistance and fast switching with controlled gate charge (Qg = 198–300 nC). Its P-channel configuration enables high-side switching without level-shifting circuitry in DC-fed systems.
The device integrates a robust body diode (VSD = -0.95 V at -80 A, TJ = 25 °C) and supports repetitive avalanche energy handling (EAS = 245 mJ), making it suitable for inductive load switching in automotive power distribution modules where transient overvoltage immunity is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | -60 V - Supports full operation across 12 V and 24 V automotive battery rails with margin for load dump transients. |
| RDS(on) @ VGS = -10 V | 9.3 mΩ - Enables <1 W conduction loss at 100 A, critical for thermally constrained under-hood mounting. |
| ID (Cont.) @ TC = 25 °C | -100 A - Delivers high-power switching capability in compact TO-220AB footprint without external heatsink at moderate duty cycles. |
| Junction Temp Range | -55 °C to +175 °C - Qualified for engine compartment placement per AEC-Q101, eliminating need for remote mounting. |
| RthJC | 0.8 °C/W - Allows direct heatsink attachment via drain tab for efficient thermal path from die to ambient. |
| Qg (Total) | 198–300 nC - Determines gate driver power requirement and switching speed trade-off in PWM-controlled applications. |
| EAS | 245 mJ - Specifies single-pulse avalanche energy handling capacity during inductive turn-off events. |
Pinout & Package
Package: TO-220AB - Insulated case with drain-connected metal tab, 3-pin through-hole mounting, 13.35–14.02 mm length, 10.04–10.51 mm width, 4.25–4.65 mm height, and heatsink mounting hole (ØP = 3.54–3.94 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to system ground or battery negative in high-side configurations. |
| Pin 2 (Gate) | Control input (G) | Receives negative gate voltage relative to source to turn on; threshold range -1.5 V to -2.5 V. |
| Pin 3 (Drain) | Power output (D) | Connected to drain tab; electrically and thermally tied to heatsink; carries full load current path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 9.3 mΩ RDS(on) in TO-220AB, enabling higher current density than planar P-channel alternatives. |
| AEC-Q101 qualified | Validated for automotive under-hood use including temperature cycling, humidity bias, and mechanical shock testing. |
| 100 % Rg and UIS tested | Each unit undergoes production-level gate resistance screening and unclamped inductive switching stress validation. |
| Low RthJC (0.8 °C/W) | Enables >150 W power dissipation with modest heatsinking, supporting high-duty-cycle load switching. |
| Enhanced body diode ruggedness | VSD = -0.95 V at -80 A ensures low forward drop and reliable freewheeling in relay replacement circuits. |
Applications
| Engine Start/Stop Control | Battery Disconnect Switch |
|---|---|
Use Scenario: Managing main battery connection during automatic engine restart after idle stop, requiring fast, low-loss switching under high ambient temperature. IC Role / Device Role / Timing Role: High-side P-channel power switch controlling battery-to-main-bus connection; activated within 20 ms of restart command. Use Value: 9.3 mΩ RDS(on) limits voltage drop to <1 V at 100 A, preserving cranking voltage; 175 °C rating avoids derating in engine bay. | Use Scenario: Isolating auxiliary battery banks (e.g., camper van dual-battery systems) from starter battery during charging or discharge cycles. IC Role / Device Role / Timing Role: Bidirectional isolation switch with integrated body diode enabling automatic charge routing without external diodes. Use Value: -120 A IS rating and -300 A pulsed source current support parallel battery bank synchronization; TO-220AB allows bolt-down heatsinking. |
| Reverse Polarity Protection | DC Motor Brake Control |
Use Scenario: Preventing damage from accidental reverse battery connection in vehicle infotainment head units and ADAS ECUs. IC Role / Device Role / Timing Role: In-line series P-MOSFET acting as ideal diode with active control; blocks reverse current while passing forward current with minimal loss. Use Value: 1 μA IDSS at -60 V ensures negligible leakage in off-state; -60 V VDS provides 2× margin over 24 V nominal systems. | Use Scenario: Rapid dynamic braking of 24 V DC motors in electric power steering (EPS) or HVAC blower actuators. IC Role / Device Role / Timing Role: Low-inductance power switch shorting motor terminals to dissipate kinetic energy as heat in the MOSFET channel. Use Value: 245 mJ EAS rating absorbs single-event braking energy; 0.8 °C/W RthJC sustains repeated braking pulses without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-current power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PBF | RDS(on) = 20 mΩ @ -10 V; lower current rating (-74 A); non-AEC-Q101; TO-220AB package. | Not qualified for automotive under-hood use; suitable only for industrial or consumer-grade 12 V systems. | Select when AEC-Q101 compliance is not required and higher RDS(on) is acceptable for cost-sensitive designs. |
| STP110P3LLH6 | RDS(on) = 7.5 mΩ @ -10 V; AEC-Q101 qualified; same TO-220AB package; slightly lower VDS (-40 V). | Limited to 40 V systems; insufficient for 24 V load dump margin; better conduction efficiency but reduced voltage safety margin. | Select when operating exclusively in 12 V environments with tight thermal constraints and no need for 60 V transient tolerance. |
Compared with IRF4905PBF and STP110P3LLH6, SQP100P06-9M3L_GE3 uniquely balances -60 V rating, AEC-Q101 qualification, and 9.3 mΩ RDS(on) in TO-220AB-making it the only option among the three validated for 24 V automotive power distribution with full load dump immunity.
Availability
SQP100P06-9M3L_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, battery management, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for SQP100P06-9M3L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and automotive-grade qualification.
The SQP100P06-9M3L_GE3 belongs to Vishay's TrenchFET® automotive P-channel MOSFET product line, engineered specifically for high-current, high-temperature power switching in engine compartment and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for SQP100P06-9M3L_GE3 at 125 °C case temperature?
The SQP100P06-9M3L_GE3 has a continuous drain current rating of -58 A at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and silicon die at elevated temperatures, and must be applied in thermal design calculations for sustained operation in hot environments such as engine compartments.
Is SQP100P06-9M3L_GE3 suitable for reverse polarity protection in 24 V automotive systems?
Yes, SQP100P06-9M3L_GE3 is well-suited for reverse polarity protection in 24 V automotive systems. Its -60 V VDS rating provides sufficient margin against load dump transients, and its low 9.3 mΩ RDS(on) minimizes voltage drop and power loss during normal forward conduction. The device's AEC-Q101 qualification further confirms suitability for under-hood deployment.
Does SQP100P06-9M3L_GE3 have a guaranteed avalanche energy rating?
Yes, SQP100P06-9M3L_GE3 has a specified single-pulse avalanche energy rating of 245 mJ (EAS), measured under standardized test conditions (L = 0.1 mH). This parameter is production-tested and documented in the datasheet, confirming its ability to safely absorb inductive switching energy without failure in applications like motor control and solenoid driving.
What is the gate threshold voltage range for SQP100P06-9M3L_GE3?
The gate threshold voltage (VGS(th)) for SQP100P06-9M3L_GE3 is specified as -1.5 V (min), -2.0 V (typ), and -2.5 V (max) at VDS = VGS and ID = -250 μA. This negative threshold range confirms its P-channel enhancement-mode behavior and defines the minimum gate-source voltage magnitude required to initiate conduction.
How does the thermal resistance of SQP100P06-9M3L_GE3 compare between junction-to-case and junction-to-ambient?
SQP100P06-9M3L_GE3 has a junction-to-case (RthJC) thermal resistance of 0.8 °C/W and a junction-to-ambient (RthJA) of 40 °C/W when mounted on a 1" square FR-4 PCB. The large difference highlights that effective heatsinking via the drain tab is essential-RthJC dominates thermal performance, and RthJA is highly dependent on PCB layout and airflow, not intrinsic to the device itself.
SQP100P06-9M3L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 300 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 12010 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 187W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP100P06-9M3L_GE3 FAQ
1.How can I place an order for SQP100P06-9M3L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP100P06-9M3L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP100P06-9M3L_GE3 reliable?
The price and inventory of SQP100P06-9M3L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP100P06-9M3L_GE3 is usually 5 days.
3.What payment methods are accepted for SQP100P06-9M3L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP100P06-9M3L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP100P06-9M3L_GE3?
SQP100P06-9M3L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP100P06-9M3L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP100P06-9M3L_GE3?
For technical support, including SQP100P06-9M3L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP100P06-9M3L_GE3 requirements.
6.How does Aetrix verify that SQP100P06-9M3L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP100P06-9M3L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP100P06-9M3L_GE3 meets industry standards.
7.What is the process for return or replacement of SQP100P06-9M3L_GE3?
All SQP100P06-9M3L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP100P06-9M3L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP100P06-9M3L_GE3 part is unused and in its original packaging.
Return procedure for SQP100P06-9M3L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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