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Vishay Siliconix SQP10250E_GE3
- Part No.:
- SQP10250E_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP10250E_GE3.pdf
- Description:
- MOSFET N-CH 250V 53A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,051
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Product details
Overview
SQP10250E from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 250 V drain-source voltage, 53 A continuous drain current at TC = 25 °C, and 0.030 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQP10250E datasheet, SQP10250E pinout, SQP10250E application, or SQP10250E equivalent, this page delivers verified thermal resistance (RthJC = 0.6 °C/W), gate charge (Qg = 50–75 nC), avalanche energy rating (EAS = 84 mJ), and TO-220AB package mechanical data - all critical for high-reliability automotive power design.
Technical Context
The SQP10250E uses trench-gate silicon technology optimized for low RDS(on) and robust unclamped inductive switching (UIS) performance. Its 0.6 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsink mass when mounted on standard FR4 PCBs.
It features a body diode with 155–310 ns reverse recovery time (trr), 933–1900 nC Qrr, and 0.82–1.5 V forward voltage (VSD) at IF = 20 A, supporting synchronous rectification and freewheeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports 24 V and 48 V automotive systems with ≥2× bus voltage margin |
| RDS(on) | 0.030 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 20 A, reducing thermal load |
| ID (cont.) | 53 A @ TC = 25 °C - delivers high current capability in compact TO-220AB footprint |
| EAS | 84 mJ - withstands repetitive inductive energy spikes without failure in motor drive circuits |
| RthJC | 0.6 °C/W - allows direct heatsink mounting for efficient thermal management in space-constrained modules |
| Qg | 50–75 nC - determines gate driver power requirement and switching speed trade-off |
| TJ range | −55 to +175 °C - certified for under-hood environments per AEC-Q101 stress testing |
Pinout & Package
Package: TO-220AB - industry-standard through-hole power package with isolated drain tab, 13.35–14.02 mm length, 10.04–10.51 mm width, and 4.25–4.65 mm body height. Mounting hole ØP = 3.54–3.94 mm supports mechanical heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main power path output / heatsink-connected terminal | Electrically tied to metal tab; requires isolation washer when mounted to grounded heatsink |
| G (Gate) | Control input for channel conduction | Requires ≤±20 V drive; 2.84 Ω typical gate resistance affects turn-on/turn-off timing |
| S (Source) | Reference node for gate drive and current return path | Common connection point for low-side switching; defines VGS reference for threshold behavior |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use via temperature cycling, HTRB, and UIS stress tests per Rev. D requirements |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and single-pulse avalanche ruggedness |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs at same voltage class |
| Low RthJC (0.6 °C/W) | Enables >200 W dissipation with modest heatsinking - critical for engine control units |
| Body diode with low Qrr | 933–1900 nC reverse recovery charge minimizes switching losses during freewheeling |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-side or low-side switching of solenoid fuel injectors in gasoline/diesel ECUs operating at 12–16 V battery supply with transient spikes up to ±100 V. IC Role / Device Role / Timing Role: Power switch controlling injector coil current; must sustain 50+ A peak pulses with fast turn-off to limit fuel metering error. Use Value: 84 mJ EAS rating prevents failure during inductive kickback; 175 °C TJ rating ensures reliability near hot engine blocks. | Use Scenario: Primary-side high-voltage switch in bidirectional 48 V–350 V DC-DC converters for 48 V mild hybrid architectures. IC Role / Device Role / Timing Role: Main power switch handling 250 V blocking and 30 A continuous conduction in hard-switched phase-shifted full-bridge topology. Use Value: 0.030 Ω RDS(on) reduces conduction loss at high current; TO-220AB package enables direct heatsink mounting in compact power modules. |
| Electric Power Steering (EPS) Motor Phase Leg | Onboard Charger (OBC) AC-DC Front-End |
Use Scenario: Half-bridge leg in three-phase EPS motor inverter, exposed to vibration, humidity, and ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET-based inverter driving 300–500 W brushless motor; requires fast switching and robust short-circuit capability. Use Value: AEC-Q101 qualification confirms suitability for safety-critical steering systems; 180 A pulsed drain current supports motor stall conditions. | Use Scenario: PFC boost switch in 3.3 kW OBC front-end converting 230 VAC to 400 VDC, operating continuously at elevated ambient temperature. IC Role / Device Role / Timing Role: High-voltage, high-current switching element in continuous conduction mode (CCM) PFC stage requiring low RDS(on) and stable gate threshold. Use Value: 2.5–3.5 V VGS(th) range ensures predictable turn-on across temperature; 0.6 °C/W RthJC simplifies thermal design in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 250 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NK25Z | Higher RDS(on) = 0.22 Ω @ 10 V; TO-247 package; no AEC-Q101 certification | Targeted at industrial SMPS, not automotive; lacks UIS and temperature cycling validation | Select only for non-automotive cost-sensitive designs where 250 V blocking suffices but AEC-Q101 is unnecessary |
| IXTH30N25L2 | Lower ID = 30 A; higher RDS(on) = 0.085 Ω; TO-247; AEC-Q101 qualified | Optimized for linear-mode operation; higher SOA but lower current density than SQP10250E | Prefer for analog-regulator or LDO-like applications needing wide safe operating area, not high-current switching |
Compared with STW20NK25Z and IXTH30N25L2, the SQP10250E offers superior current density (53 A), lowest RDS(on) (0.030 Ω), and automotive-qualified thermal robustness - making it optimal for high-efficiency, space-constrained automotive power stages where conduction loss and reliability are primary constraints.
Availability
SQP10250E is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply and long-term automotive lifecycle support.
Supply support for SQP10250E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP10250E belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine bay and chassis-mounted electronics.
FAQ
What is the maximum continuous drain current rating for SQP10250E at 125 °C case temperature?
The SQP10250E supports 30 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures reliable operation in high-ambient environments such as under-hood automotive locations. The SQP10250E maintains stable RDS(on) performance up to 175 °C junction temperature, enabling robust design margins.
Is SQP10250E suitable for use in synchronous rectification topologies?
Yes, the SQP10250E is suitable for synchronous rectification due to its low RDS(on) (0.030 Ω), fast body diode (trr = 155–310 ns), and low Qrr (933–1900 nC). Its gate threshold voltage (2.5–3.5 V) allows clean turn-on with standard 5 V or 10 V gate drivers. The SQP10250E's body diode forward voltage (0.82–1.5 V at 20 A) also supports efficient freewheeling in buck-derived converters.
Does SQP10250E require external gate resistors for automotive EMI compliance?
While not mandatory, a 5–10 Ω external gate resistor is recommended for SQP10250E to control dV/dt and reduce EMI in automotive applications. The device's typical gate resistance is 2.84 Ω, and its total gate charge (50–75 nC) interacts with driver impedance to determine switching speed. Using an external resistor allows tuning of rise/fall times (tr = 6–15 ns, tf = 10–20 ns) to meet CISPR 25 Class 5 emission limits without compromising efficiency.
How does the SQP10250E's avalanche rating compare to standard industrial MOSFETs?
The SQP10250E is fully rated for unclamped inductive switching with EAS = 84 mJ and IAS = 41 A (L = 0.1 mH), exceeding most industrial 250 V MOSFETs that omit UIS characterization. This rating is 100 % production-tested per datasheet, unlike many competitors where avalanche capability is only guaranteed by design. The SQP10250E's ruggedness makes it appropriate for motor drives and solenoid controls where inductive energy must be safely absorbed without snubbers.
Can SQP10250E be used in parallel configurations for higher current handling?
Yes, the SQP10250E supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across devices. Its gate threshold voltage variation (2.5–3.5 V) and matched transconductance ensure stable balancing when driven with identical gate traces and resistors. For parallel operation, use individual 5 Ω gate resistors and Kelvin source connections to minimize loop inductance - critical for maintaining stability in high-di/dt applications like EPS inverters using multiple SQP10250E units.
SQP10250E_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 53A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4050 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP10250E_GE3 FAQ
1.How can I place an order for SQP10250E_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP10250E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP10250E_GE3 reliable?
The price and inventory of SQP10250E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP10250E_GE3 is usually 5 days.
3.What payment methods are accepted for SQP10250E_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP10250E_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP10250E_GE3?
SQP10250E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP10250E_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP10250E_GE3?
For technical support, including SQP10250E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP10250E_GE3 requirements.
6.How does Aetrix verify that SQP10250E_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP10250E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP10250E_GE3 meets industry standards.
7.What is the process for return or replacement of SQP10250E_GE3?
All SQP10250E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP10250E_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP10250E_GE3 part is unused and in its original packaging.
Return procedure for SQP10250E_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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