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Vishay Siliconix SQP120N06-06_GE3
- Part No.:
- SQP120N06-06_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP120N06-06_GE3.pdf
- Description:
- MOSFET N-CH 60V 119A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,801
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Product details
Overview
SQP120N06-06_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 119 A continuous drain current at TC = 25 °C, and 0.006 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood motor control and DC-DC converter applications.
For engineers reviewing the SQP120N06-06_GE3 datasheet, SQP120N06-06_GE3 pinout, SQP120N06-06_GE3 application, or SQP120N06-06_GE3 equivalent, key selection criteria include its low RDS(on) at high temperature, 100 % UIS testing, TO-220AB package thermal performance, and gate charge profile for high-frequency switching in 12 V/48 V automotive systems.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and high current density in a standard through-hole TO-220AB package. Its 0.88 °C/W junction-to-case thermal resistance enables high-power operation with minimal heatsink requirements when mounted on PCBs or bolted to chassis.
The device features fully characterized dynamic parameters including 96.5 nC typical total gate charge, 27.2 nC gate-drain charge, and sub-24 ns turn-on delay - optimized for synchronous rectification and high-side switching in automotive DC-DC converters and motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (Max) | 60 V - supports 48 V nominal automotive bus with 20 % overvoltage margin |
| RDS(on) @ 10 V | 0.006 Ω - delivers ≤ 7.2 W conduction loss at 119 A, enabling high-efficiency power stages |
| ID (Cont.) @ 25 °C | 119 A - sustains peak load currents in starter-generator and HVAC blower drives |
| TJ Range | –55 to +175 °C - certified for under-hood placement without derating in engine control units |
| Qg (Typ.) | 96.5 nC - balances switching speed and gate drive power in 100–500 kHz DC-DC topologies |
| RthJC | 0.88 °C/W - allows direct heatsink mounting for >100 W dissipation without thermal interface material |
| AEC-Q101 | Qualified - meets stress test requirements for automotive electronics per JESD22-A108 |
Pinout & Package
Package: TO-220AB, single-channel N-channel MOSFET with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting hole accommodates M3 screw for mechanical and thermal attachment to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Source (S) | Low-side return path; electrically tied to PCB ground plane; carries full load current |
| Pin 2 (Center) | Drain (D) | High-current output node; connected to internal die backside and metal tab for thermal conduction |
| Pin 3 (Right) | Gate (G) | Control input; requires <1.7 Ω gate resistance to limit ringing; sensitive to ESD (±20 V max) |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.0045 Ω typical RDS(on) at 30 A/25 °C while maintaining rugged avalanche capability (EAS = 211 mJ) |
| 100 % UIS tested | Guarantees unclamped inductive switching robustness for motor commutation and relay driving without snubbers |
| Low RthJC (0.88 °C/W) | Reduces thermal bottleneck between die and heatsink, supporting >150 W continuous dissipation with forced air |
| AEC-Q101 qualification | Validated for automotive use including HTOL, temperature cycling, and HTRB - no additional qualification needed |
| 100 % Rg tested | Ensures gate resistance between 0.3–1.7 Ω, critical for predictable turn-on/turn-off timing in safety-critical systems |
Applications
| Automotive Starter-Generator Control | 48 V DC-DC Converter Primary Switch |
|---|---|
Use Scenario: High-current bidirectional power flow in 48 V mild hybrid architectures during regenerative braking and engine cranking. IC Role / Device Role / Timing Role: Main power switch in synchronous buck-boost topology; handles 100+ A pulsed currents with <25 ns switching transitions. Use Value: Low RDS(on) minimizes conduction loss across wide temperature range; AEC-Q101 status eliminates requalification effort. |
Use Scenario: Primary-side high-side switch in isolated forward or phase-shifted full-bridge converters converting 48 V to 12 V for vehicle subsystems. IC Role / Device Role / Timing Role: Fast-switching power FET with controlled Qgd/Qgs ratio to reduce shoot-through risk at 200–300 kHz. Use Value: 27.2 nC Qgd enables clean voltage transition during hard switching; TO-220AB tab simplifies heatsinking on compact power modules. |
| Electric Power Steering (EPS) Motor Driver | On-Board Charger (OBC) Input Stage |
Use Scenario: Half-bridge leg in three-phase inverter supplying 30–50 A RMS to brushless EPS motor under steering assist demand. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode; conducts reverse recovery current during PWM dead-time. Use Value: 0.9–1.5 V VSD ensures low forward drop during freewheeling; 175 °C rating maintains reliability near motor housing. |
Use Scenario: AC-DC PFC boost switch in 3.3–11 kW on-board chargers interfacing with grid or renewable sources. IC Role / Device Role / Timing Role: High-current, high-voltage switch operating at 65–100 kHz with 60 V blocking capability for interleaved boost stages. Use Value: 480 A pulsed drain current rating supports surge handling during grid transients; 65 A IAS withstands inductive energy dump. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7AG | RDS(on) = 0.0042 Ω @ 10 V (lower), but only rated to 150 °C TJ and not AEC-Q101 qualified | Requires additional qualification for automotive use; better suited for industrial UPS or solar inverters | Select STL220N6F7AG only if AEC-Q101 is not required and lower RDS(on) justifies extra validation effort |
| IRFB4115PBF | RDS(on) = 0.0055 Ω @ 10 V, 175 °C rating, but lacks 100 % UIS and AEC-Q101 documentation | Used in legacy automotive designs but lacks current-generation stress test traceability | Choose IRFB4115PBF only for cost-sensitive non-safety-critical replacements where UIS margin is verified externally |
Compared with STL220N6F7AG and IRFB4115PBF, SQP120N06-06_GE3 uniquely combines AEC-Q101 qualification, 100 % UIS testing, and documented 175 °C operation - eliminating design-in risk for new automotive power modules without compromising thermal or conduction performance.
Availability
SQP120N06-06_GE3 is available at Aetrix Electronics and suitable for automotive motor control, 48 V DC-DC conversion, and on-board charger applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SQP120N06-06_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP120N06-06_GE3 belongs to Vishay's automotive-qualified TrenchFET® Gen IV family, engineered specifically for high-current, high-temperature switching in next-generation 12 V/48 V vehicle electrical architectures.
FAQ
What is the maximum continuous drain current rating for SQP120N06-06_GE3 at 125 °C case temperature?
The SQP120N06-06_GE3 supports 68 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation in high-ambient environments such as engine compartments. The device maintains 0.0104 Ω RDS(on) at this condition, enabling predictable power loss calculation.
Is SQP120N06-06_GE3 pin-compatible with other TO-220AB N-channel MOSFETs?
SQP120N06-06_GE3 uses standard TO-220AB pinout (Drain–Gate–Source, left-to-right with tab facing outward), matching industry layout conventions. However, pin compatibility alone does not guarantee functional equivalence - RDS(on), gate charge, and thermal behavior must be verified against target circuit requirements before substitution.
Does SQP120N06-06_GE3 include integrated ESD protection on the gate terminal?
SQP120N06-06_GE3 specifies ±20 V maximum gate-source voltage and ±100 nA gate leakage at ±20 V, indicating robust gate oxide integrity. While not labeled "ESD-protected" in the datasheet, its 100 % Rg and UIS testing imply gate structure hardened against transient overstress - external TVS remains recommended for system-level ESD immunity per ISO 10605.
What is the typical total gate charge (Qg) value for SQP120N06-06_GE3 and how does it impact gate driver selection?
The SQP120N06-06_GE3 has a typical total gate charge of 96.5 nC at VGS = 10 V, VDS = 30 V, and ID = 75 A. This value determines peak gate current requirements: for 20 ns rise time, a driver must source ~4.8 A peak. Gate drivers like the UCC27531 or IRS2007 are commonly paired to meet this demand while managing Qgd-induced Miller effects.
Can SQP120N06-06_GE3 be used in synchronous rectification configurations?
Yes, SQP120N06-06_GE3 is suitable for synchronous rectification due to its low RDS(on) (0.006 Ω), fast switching (td(on) = 16 ns typ.), and low reverse recovery charge in its body diode. Its 0.9–1.5 V VSD at 75 A supports efficient freewheeling, and the 175 °C rating ensures stability in high-duty-cycle SMPS designs.
SQP120N06-06_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 119A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6495 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 175W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP120N06-06_GE3 FAQ
1.How can I place an order for SQP120N06-06_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP120N06-06_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP120N06-06_GE3 reliable?
The price and inventory of SQP120N06-06_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP120N06-06_GE3 is usually 5 days.
3.What payment methods are accepted for SQP120N06-06_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP120N06-06_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP120N06-06_GE3?
SQP120N06-06_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP120N06-06_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP120N06-06_GE3?
For technical support, including SQP120N06-06_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP120N06-06_GE3 requirements.
6.How does Aetrix verify that SQP120N06-06_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP120N06-06_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP120N06-06_GE3 meets industry standards.
7.What is the process for return or replacement of SQP120N06-06_GE3?
All SQP120N06-06_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP120N06-06_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP120N06-06_GE3 part is unused and in its original packaging.
Return procedure for SQP120N06-06_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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