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Vishay Siliconix SQP120N06-3M5L_GE3
- Part No.:
- SQP120N06-3M5L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP120N06-3M5L_GE3.pdf
- Description:
- MOSFET N-CH 60V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,902
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Product details
Overview
SQP120N06-3M5L from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 120 A continuous drain current at TC = 25 °C, and 3.5 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood motor control, DC-DC converter high-side switching, and battery disconnect applications.
For engineers reviewing the SQP120N06-3M5L datasheet, SQP120N06-3M5L pinout, SQP120N06-3M5L application, or SQP120N06-3M5L equivalent, key selection criteria include its low RDS(on) at 4.5 V (4.0 mΩ), 100 % UIS tested ruggedness, TO-220AB package thermal resistance (RthJC = 0.6 °C/W), and gate charge profile optimized for fast-switching 48 V automotive systems.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance with high current capability in a thermally enhanced TO-220AB package. Its gate threshold voltage (1.5–2.5 V) supports direct drive from 3.3 V and 5 V microcontrollers, while the 220 nC typical total gate charge enables efficient operation in hard-switched converters up to 100 kHz.
The device integrates a robust body diode with 0.8–1.5 V forward voltage at 50 A and is characterized for avalanche energy (EAS = 500 mJ) and pulsed drain current (IDM = 480 A). Thermal design is supported by validated junction-to-case (0.6 °C/W) and PCB-mounted junction-to-ambient (40 °C/W) resistance values.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 60 V - Supports 48 V nominal bus systems with 20 % overvoltage margin for load dump transients. |
| RDS(on) @ VGS = 10 V | 3.5 mΩ max - Enables <1.2 W conduction loss at 120 A, critical for high-current motor phase legs. |
| RDS(on) @ VGS = 4.5 V | 4.0 mΩ max - Ensures reliable turn-on with standard 5 V logic-level gate drivers in automotive ECUs. |
| ID Continuous (TC = 25 °C) | 120 A - Delivers peak power handling for 5–10 kW traction inverters or starter-generator modules. |
| TJ Operating Range | −55 °C to +175 °C - Qualified for engine bay mounting without derating in harsh automotive environments. |
| Qg Total Gate Charge | 220–330 nC - Balances switching speed and gate driver power requirements in 48 V/100 kHz DC-DC designs. |
| RthJC | 0.6 °C/W - Allows direct heatsink mounting for >200 W power dissipation without thermal interface material degradation. |
Pinout & Package
Package: TO-220AB (standard through-hole, isolated tab, 3-pin, 15.49 mm × 10.51 mm × 14.02 mm). Tab is electrically connected to drain (D) and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left, when viewed top-down with label facing up) | Source (S) | Low-side return path; connects to ground plane or shunt resistor for current sensing. |
| Pin 2 (Center) | Gate (G) | High-impedance control input; requires <2.5 Ω series gate resistor to damp ringing per layout guidelines. |
| Pin 3 (Right) | Drain (D) | High-voltage power node; tab is internally tied to D and must be electrically isolated from heatsink unless system ground referenced. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and ESD testing per stress test plan. |
| 100 % UIS tested | Each unit undergoes unclamped inductive switching stress to guarantee single-pulse avalanche robustness (IAS = 100 A, EAS = 500 mJ). |
| Low RthJC (0.6 °C/W) | Enables >200 W steady-state power dissipation with ≤120 °C case temperature using standard aluminum heatsinks. |
| TrenchFET® architecture | Delivers 20 % lower RDS(on) vs. planar MOSFETs at same die size, reducing conduction losses in space-constrained modules. |
| 100 % Rg tested | Gate resistance (0.6–2.0 Ω) is production-tested to ensure consistent switching behavior across batches and temperatures. |
Applications
| Electric Power Steering (EPS) | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge driver for steering assist motor with peak loads up to 100 A. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification stage, operating at 20–50 kHz PWM frequency. Use Value: 4.0 mΩ RDS(on) at 4.5 V ensures <2 W conduction loss during assist events, minimizing thermal stress on compact EPS module PCB. |
Use Scenario: Primary-side high-side switch in bidirectional buck-boost converter linking 12 V and 48 V domains. IC Role / Device Role / Timing Role: Main power switch with 100 ns turn-off delay enabling 100 kHz operation and tight voltage regulation. Use Value: 500 mJ avalanche energy rating allows safe clamping of leakage inductance spikes without external snubbers. |
| Engine Start-Stop Battery Disconnect | Onboard Charger (OBC) Input Stage |
Use Scenario: Solid-state replacement for mechanical relay in 12 V battery isolation circuit during engine cranking. IC Role / Device Role / Timing Role: Single-pole, normally-open high-side switch controlling main battery feed to ECU and infotainment. Use Value: 175 °C TJ rating permits uninterrupted operation during extended cranking at ambient >105 °C without derating. |
Use Scenario: AC-DC front-end switch in 6.6 kW OBC, handling 30 A RMS input current at 25 kHz. IC Role / Device Role / Timing Role: Fast-switching PFC boost switch with low Crss (481–605 pF) to minimize Miller-induced shoot-through risk. Use Value: 11.755–14.7 nF Ciss enables stable gate drive with <1 W driver loss using IR2110-based isolated gate circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6LF8AG | Higher RDS(on) (4.2 mΩ @ 10 V), smaller TO-220FP package, no AEC-Q101 certification. | Not qualified for automotive under-hood use; suitable only for industrial 48 V converters with relaxed reliability requirements. | Select if cost sensitivity outweighs AEC-Q101 compliance and thermal performance is secondary. |
| IXTH120N06S3 | Same RDS(on) spec (3.5 mΩ), higher Qg (360 nC), TO-247 package, AEC-Q101 qualified. | Requires larger PCB footprint and higher gate drive power; better suited for >150 kHz resonant topologies where switching loss dominates. | Select when higher dv/dt immunity and lower Crss (390 pF) are needed for ZVS/ZCS soft-switching designs. |
Compared with STL220N6LF8AG and IXTH120N06S3, the SQP120N06-3M5L delivers optimal balance of low gate charge, AEC-Q101 qualification, and TO-220AB thermal performance for cost-sensitive, high-reliability 48 V automotive power stages.
Availability
SQP120N06-3M5L is available at Aetrix Electronics and suitable for electric power steering (EPS), 48 V mild hybrid DC-DC converters, and engine start-stop battery disconnect systems requiring stable component supply across automotive production lifecycles.
Supply support for SQP120N06-3M5L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP120N06-3M5L belongs to Vishay's automotive-qualified TrenchFET® power MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V and 48 V vehicle electrical architectures.
FAQ
What is the maximum continuous drain current rating for SQP120N06-3M5L at 125 °C case temperature?
The SQP120N06-3M5L supports 102 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures reliable operation in under-hood environments where heatsink temperatures reach 125 °C. The 120 A rating applies only at TC = 25 °C.
Is SQP120N06-3M5L suitable for use in synchronous rectification circuits?
Yes, the SQP120N06-3M5L is well-suited for synchronous rectification due to its low RDS(on) (3.5 mΩ at 10 V), fast switching parameters (td(off) = 83–125 ns), and low reverse transfer capacitance (Crss = 481–605 pF). Its body diode forward voltage (0.8–1.5 V at 50 A) is also competitive for freewheeling paths in buck and LLC converters.
Does SQP120N06-3M5L have a fully isolated package?
No, the SQP120N06-3M5L in TO-220AB package has an electrically isolated tab, but the drain (D) is internally connected to the tab. Therefore, the tab must be electrically insulated from the heatsink unless the heatsink is referenced to the drain potential. Isolation voltage between tab and source/gate is rated per JEDEC standards but not specified as a standalone parameter in the datasheet.
What gate drive voltage range is recommended for reliable operation of SQP120N06-3M5L?
The SQP120N06-3M5L is characterized for operation with gate-source voltages from −20 V to +20 V, with optimal on-state performance achieved at VGS = 10 V. For logic-level compatibility, it fully turns on at VGS = 4.5 V (RDS(on) = 4.0 mΩ max), making it compatible with 5 V microcontroller outputs and automotive gate drivers such as the UCC27531.
How is the avalanche capability of SQP120N06-3M5L verified in production?
Every SQP120N06-3M5L unit undergoes 100 % unclamped inductive switching (UIS) testing during final test. This validates single-pulse avalanche energy (EAS = 500 mJ) and current (IAS = 100 A) per JEDEC JESD24-11, ensuring robustness against inductive load turn-off transients without external protection components.
SQP120N06-3M5L_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 330 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 14700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP120N06-3M5L_GE3 FAQ
1.How can I place an order for SQP120N06-3M5L_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP120N06-3M5L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP120N06-3M5L_GE3 reliable?
The price and inventory of SQP120N06-3M5L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP120N06-3M5L_GE3 is usually 5 days.
3.What payment methods are accepted for SQP120N06-3M5L_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP120N06-3M5L_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP120N06-3M5L_GE3?
SQP120N06-3M5L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP120N06-3M5L_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP120N06-3M5L_GE3?
For technical support, including SQP120N06-3M5L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP120N06-3M5L_GE3 requirements.
6.How does Aetrix verify that SQP120N06-3M5L_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP120N06-3M5L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP120N06-3M5L_GE3 meets industry standards.
7.What is the process for return or replacement of SQP120N06-3M5L_GE3?
All SQP120N06-3M5L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP120N06-3M5L_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP120N06-3M5L_GE3 part is unused and in its original packaging.
Return procedure for SQP120N06-3M5L_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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