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Vishay Siliconix SQP120N10-09_GE3
- Part No.:
- SQP120N10-09_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP120N10-09_GE3.pdf
- Description:
- MOSFET N-CH 100V 120A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:229
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Product details
Overview
SQP120N10-09_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V VDS, 120 A continuous drain current at TC = 25 °C, and 9.5 mΩ RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-220AB package, designed for high-current DC motor control and 48 V battery system switching in under-hood automotive applications.
For engineers reviewing the SQP120N10-09_GE3 datasheet, SQP120N10-09_GE3 pinout, SQP120N10-09_GE3 application, or SQP120N10-09_GE3 equivalent, this device delivers verified AEC-Q101 qualification, 100 % Rg and UIS testing, and low thermal resistance (RthJC = 0.4 °C/W) critical for thermally constrained engine-control modules and EPS systems.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-duty-cycle automotive power stages. Its gate charge profile (Qg = 120–180 nC) and low Rg (0.25–2.3 Ω) support efficient PWM operation at frequencies up to 100 kHz in brushed DC motor drivers and solenoid controllers.
The device integrates a robust body diode with VSD = 0.9–1.5 V at IF = 85 A and supports single-pulse avalanche energy of 266 mJ, enabling reliable freewheeling and transient suppression without external clamping in inductive load circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage for 48 V nominal systems with 2× bus transients. |
| RDS(on) @ VGS = 10 V | 9.5 mΩ - Confirmed at ID = 30 A and TJ = 25 °C; enables <1.5 W conduction loss at 40 A. |
| ID (continuous) | 120 A @ TC = 25 °C - Sustained current capability with heatsink; derates to 73 A at 125 °C case. |
| Qg | 120–180 nC - Total gate charge defining drive strength requirement for <100 ns switching transitions. |
| RthJC | 0.4 °C/W - Junction-to-case thermal resistance enabling direct heatsink mounting for high-power dissipation. |
| AEC-Q101 | Qualified - Validated for automotive reliability including HTOL, TC, UHAST, and ESD per Rev. D requirements. |
| EAS | 266 mJ - Single-pulse avalanche energy rating supporting inductive turn-off without snubber. |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard 3-pin vertical lead frame, and heatsink-mounting hole. Designed for through-hole PCB assembly with FR4 board thermal relief and external heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat transfer surface | Electrically connected to metal tab; must be electrically isolated from chassis unless referenced to system ground. |
| Source | Reference node for gate drive and current return | Low-inductance connection point for shunt sensing and gate driver return path. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <2.3 Ω series resistance to damp ringing during fast edge transitions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 9.5 mΩ RDS(on) at 100 V rating-20 % lower on-resistance than planar equivalents in same package. |
| AEC-Q101 qualification | Validated for automotive under-hood use including temperature cycling (-55 °C to +175 °C) and humidity testing. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness-no field failures due to latent gate defects. |
| Low RthJC = 0.4 °C/W | Permits >300 W power dissipation with 75 °C temperature rise to heatsink-supports compact thermal design in space-constrained ECUs. |
| Body diode with soft recovery | VSD = 0.9 V @ 85 A and low Qrr reduces reverse-recovery losses in H-bridge freewheeling paths. |
Applications
| Electric Power Steering (EPS) | Engine Cooling Fan Control |
|---|---|
Use Scenario: High-current H-bridge driver for 12–48 V brushless or brushed steering assist motors. IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration, handling bidirectional 80–120 A peak currents. Use Value: 9.5 mΩ RDS(on) minimizes I²R heating during sustained torque assist; 175 °C rating ensures operation near hot engine blocks. |
Use Scenario: PWM-controlled DC fan driver in radiator or turbocharger cooling systems. IC Role / Device Role / Timing Role: Low-side switch modulating 60–100 A loads at 1–20 kHz with fast turn-on/turn-off. Use Value: 21–32 ns turn-on delay and 16–24 ns fall time enable precise duty-cycle control and reduced EMI generation. |
| 48 V Mild Hybrid Starter-Generator | Commercial Vehicle Air Brake Solenoid Driver |
Use Scenario: Bidirectional power switch in 48 V starter-generator inverters for stop-start and regenerative braking. IC Role / Device Role / Timing Role: Phase-leg switch handling 100 A continuous and 480 A pulsed currents with synchronous rectification. Use Value: 266 mJ EAS rating withstands inductive kickback during rapid current reversal without external protection. |
Use Scenario: High-reliability solenoid actuator driver in air brake control units for trucks and buses. IC Role / Device Role / Timing Role: Single-ended switch controlling 30–50 A inductive coils with fast de-energization. Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure function across extreme ambient conditions and vibration profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N10F7 | RDS(on) = 9.0 mΩ @ 10 V but rated only to 150 °C TJ; no AEC-Q101 documentation provided. | Not qualified for automotive under-hood use; suitable for industrial motor drives only. | Select STL120N10F7 only if AEC-Q101 compliance is not required and junction temperature remains ≤150 °C. |
| IXTH120N10L2 | RDS(on) = 10.5 mΩ @ 10 V; higher Qg (220 nC); TO-247 package with larger footprint and higher RthJC (0.55 °C/W). | Requires larger PCB area and more thermal mass; better suited for lower-frequency, higher-voltage industrial SMPS. | Choose IXTH120N10L2 when layout allows TO-247 and switching frequency is <20 kHz with emphasis on ruggedness over efficiency. |
Compared with STL120N10F7 and IXTH120N10L2, SQP120N10-09_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and TO-220AB's compact thermal interface-making it the only drop-in option for space- and temperature-constrained automotive power stages requiring validated reliability.
Availability
SQP120N10-09_GE3 is available at Aetrix Electronics and suitable for electric power steering, engine cooling fan control, and 48 V mild hybrid systems requiring stable component supply, long-term automotive lifecycle support, and traceable sourcing.
Supply support for SQP120N10-09_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP120N10-09_GE3 belongs to Vishay's automotive-qualified TrenchFET® power MOSFET family, engineered specifically for high-current, high-temperature switching in engine control, chassis, and electrification systems.
FAQ
What is the maximum continuous drain current rating for SQP120N10-09_GE3 at 125 °C case temperature?
The SQP120N10-09_GE3 supports 73 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within the 175 °C maximum junction temperature. Engineers must verify heatsink design to maintain TC ≤ 125 °C under full-load conditions.
Is SQP120N10-09_GE3 qualified to AEC-Q101, and what does that qualification cover?
Yes, SQP120N10-09_GE3 is AEC-Q101 qualified per the Vishay datasheet revision B. This includes stress testing for high-temperature operating life, temperature cycling, unbiased highly accelerated stress test, and electrostatic discharge-validating reliability for automotive under-hood applications. The qualification applies to the exact SQP120N10-09_GE3 variant, not just the family.
What is the typical total gate charge (Qg) of SQP120N10-09_GE3, and how does it affect gate driver selection?
The SQP120N10-09_GE3 has a typical total gate charge of 120 nC and a maximum of 180 nC at VGS = 10 V. This value determines the peak current required from the gate driver to achieve target switching speeds. For example, driving Qg = 150 nC in 50 ns requires ≥3 A peak gate current-guiding selection of drivers like the UCC27531 or NCP3420.
Can SQP120N10-09_GE3 be used in avalanche mode, and what is its rated single-pulse energy?
Yes, SQP120N10-09_GE3 is rated for unclamped inductive switching with a single-pulse avalanche energy (EAS) of 266 mJ at TJ = 25 °C. This enables controlled energy absorption during inductive turn-off without external snubbers-critical for solenoid and motor phase-leg designs where freewheeling paths are limited.
What is the thermal resistance from junction to case (RthJC) for SQP120N10-09_GE3, and how is it measured?
The SQP120N10-09_GE3 has a guaranteed RthJC of 0.4 °C/W, measured from the silicon die junction to the metal drain tab surface under standardized test conditions (JEDEC JESD51-1). This low value confirms efficient heat transfer to an external heatsink and is validated per the Vishay thermal characterization methodology in Document 62663.
SQP120N10-09_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8645 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP120N10-09_GE3 FAQ
1.How can I place an order for SQP120N10-09_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP120N10-09_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP120N10-09_GE3 reliable?
The price and inventory of SQP120N10-09_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP120N10-09_GE3 is usually 5 days.
3.What payment methods are accepted for SQP120N10-09_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP120N10-09_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP120N10-09_GE3?
SQP120N10-09_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP120N10-09_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP120N10-09_GE3?
For technical support, including SQP120N10-09_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP120N10-09_GE3 requirements.
6.How does Aetrix verify that SQP120N10-09_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP120N10-09_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP120N10-09_GE3 meets industry standards.
7.What is the process for return or replacement of SQP120N10-09_GE3?
All SQP120N10-09_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP120N10-09_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP120N10-09_GE3 part is unused and in its original packaging.
Return procedure for SQP120N10-09_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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