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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQP120N10-3M8_GE3

Name: SQP120N10-3M8_GE3
Brand: Vishay Siliconix
SKU: SQP120N10-3M8_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQP120N10-3M8_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SQP120N10-3M8_GE3.pdf

Description:: MOSFET N-CH 100V 120A TO220AB

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Product details

Overview

SQP120N10-3M8_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 100 V V_DS, 120 A continuous drain current at T_C = 25 °C, and 3.8 mΩ R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-220AB package, targeting high-current DC-DC converters and motor control in engine bay environments.

For engineers reviewing the SQP120N10-3M8_GE3 datasheet, SQP120N10-3M8_GE3 pinout, SQP120N10-3M8_GE3 application, or SQP120N10-3M8_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 0.6 °C/W junction-to-case thermal resistance, 100% R_g and UIS testing, and robust 175 °C operation for under-hood automotive power stages.

Technical Context

This MOSFET employs Vishay's TrenchFET® process to achieve low on-resistance and fast switching performance. Its gate threshold voltage (2.5–3.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers, while the 125–190 nC total gate charge supports efficient high-frequency PWM operation in synchronous rectifiers and BLDC inverters.

The device features integrated body diode with 0.9–1.5 V forward voltage at 100 A, and is characterized for avalanche energy (266 mJ) and pulsed drain current (480 A), supporting rugged operation in inductive load switching and regenerative braking circuits without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V nominal bus systems with 2× safety margin against transients
R_DS(on) @ V_GS = 10 V	3.8 mΩ - Enables <1.5 W conduction loss at 60 A, reducing heatsink requirements
I_D (continuous, T_C = 25 °C)	120 A - Delivers high output power in compact TO-220 footprint
T_J max	+175 °C - Certified for under-hood automotive use per AEC-Q101
R_thJC	0.6 °C/W - Allows direct heatsink mounting with minimal thermal interface resistance
Q_g (total)	125–190 nC - Determines gate driver power requirement and switching speed trade-off
E_AS	266 mJ - Specifies single-pulse avalanche capability for inductive turn-off stress

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole configuration. Mounting hole accommodates mechanical heatsink attachment; tab must be electrically isolated unless used as drain return path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives PWM signal; requires 10 V drive for full enhancement; 1.6–5 Ω gate resistance affects switching speed
D (Drain)	High-side power switch node	Connected to PCB heatsink tab; carries full load current and withstands 100 V transient spikes
S (Source)	Power return / reference	Common node for gate drive return and current sensing; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications with zero defect targets and extended temperature cycling
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness
TrenchFET® technology	Delivers lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs, improving efficiency in hard-switched topologies
Low R_thJC (0.6 °C/W)	Enables >200 W power dissipation with modest heatsinking, reducing system size vs. higher-R_thJC alternatives
175 °C rated junction	Supports operation in engine compartment environments where ambient exceeds 125 °C

Applications

Engine Control Unit (ECU) Power Stage	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-current 12 V supply switching for fuel injector drivers and solenoid actuators in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Main power switch in high-side configuration; handles repetitive 10–100 ms pulses at up to 120 A peak. Use Value: 3.8 mΩ R_DS(on) minimizes I²R losses during extended duty cycles, maintaining <100 °C junction rise at 85 °C ambient.	Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V/12 V DC-DC converter for 48 V belt-driven starter generators. IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology operating at 100–200 kHz. Use Value: 125–190 nC Q_g enables efficient gate drive with standard 2 A peak drivers, while 175 °C rating ensures reliability across full vehicle thermal profile.
Electric Power Steering (EPS) Motor Inverter	Commercial Vehicle HVAC Blower Driver
Use Scenario: Half-bridge leg in 3-phase inverter driving brushless motor in EPS column-assist systems. IC Role / Device Role / Timing Role: High-current switching element subjected to frequent short-circuit and overload events during steering torque transients. Use Value: 266 mJ E_AS and 480 A I_DM provide margin against fault-induced avalanche, eliminating need for external protection in most EPS designs.	Use Scenario: PWM-controlled blower motor driver in Class 8 truck HVAC systems exposed to wide ambient (-40 to +85 °C) and vibration. IC Role / Device Role / Timing Role: Single-ended switch controlling brushed DC motor via 0–100 % duty cycle modulation. Use Value: AEC-Q101 qualification and 175 °C T_J ensure compliance with commercial vehicle environmental and lifetime requirements (15+ years).

Engine Control Unit (ECU) Power Stage

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-current 12 V supply switching for fuel injector drivers and solenoid actuators in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Main power switch in high-side configuration; handles repetitive 10–100 ms pulses at up to 120 A peak.

Use Value: 3.8 mΩ R_DS(on) minimizes I²R losses during extended duty cycles, maintaining <100 °C junction rise at 85 °C ambient.

Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V/12 V DC-DC converter for 48 V belt-driven starter generators.

IC Role / Device Role / Timing Role: Low-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: 125–190 nC Q_g enables efficient gate drive with standard 2 A peak drivers, while 175 °C rating ensures reliability across full vehicle thermal profile.

Electric Power Steering (EPS) Motor Inverter

Commercial Vehicle HVAC Blower Driver

Use Scenario: Half-bridge leg in 3-phase inverter driving brushless motor in EPS column-assist systems.

IC Role / Device Role / Timing Role: High-current switching element subjected to frequent short-circuit and overload events during steering torque transients.

Use Value: 266 mJ E_AS and 480 A I_DM provide margin against fault-induced avalanche, eliminating need for external protection in most EPS designs.

Use Scenario: PWM-controlled blower motor driver in Class 8 truck HVAC systems exposed to wide ambient (-40 to +85 °C) and vibration.

IC Role / Device Role / Timing Role: Single-ended switch controlling brushed DC motor via 0–100 % duty cycle modulation.

Use Value: AEC-Q101 qualification and 175 °C T_J ensure compliance with commercial vehicle environmental and lifetime requirements (15+ years).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	Lower R_DS(on) (3.2 mΩ), but only rated to 175 °C with derating above 150 °C; no AEC-Q101 documentation in public datasheet	Targeted at industrial motor drives; lacks formal automotive qualification evidence	Prefer when highest efficiency is critical and automotive qualification is not mandated
IRFB4115PBF	Higher R_DS(on) (4.5 mΩ), 150 °C max T_J, TO-220AB package; legacy part with longer lead times	Used in legacy automotive and industrial designs; limited support for new programs	Select only for backward compatibility or cost-sensitive non-automotive applications

Compared with STL120N10F7 and IRFB4115PBF, the SQP120N10-3M8_GE3 uniquely combines AEC-Q101 certification, 175 °C operation, and 3.8 mΩ R_DS(on) in a production-ready TO-220AB package-making it the preferred choice for new automotive power modules requiring long-term reliability and thermal headroom.

Availability

SQP120N10-3M8_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild hybrid converters, electric power steering inverters, and commercial vehicle HVAC systems requiring stable component supply across multi-year production cycles.

Supply support for SQP120N10-3M8_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQP120N10-3M8_GE3 belongs to Vishay's automotive-qualified TrenchFET® power MOSFET product line, engineered specifically for high-current, high-temperature switching in engine compartment and chassis control applications.

FAQ

Is SQP120N10-3M8_GE3 qualified for automotive applications?

Yes, SQP120N10-3M8_GE3 is AEC-Q101 qualified and rated for operation from –55 °C to +175 °C junction temperature. It undergoes 100 % R_g and unclamped inductive switching (UIS) testing per automotive stress standards, making it suitable for engine control, EPS, and other under-hood power systems.

What is the maximum continuous drain current for SQP120N10-3M8_GE3 at 125 °C case temperature?

The maximum continuous drain current for SQP120N10-3M8_GE3 is 102 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures.

Does SQP120N10-3M8_GE3 have an integrated body diode, and what is its forward voltage?

Yes, SQP120N10-3M8_GE3 includes an integrated source-drain body diode. Its forward voltage is 0.9–1.5 V at I_F = 100 A and V_GS = 0 V, measured at T_J = 25 °C. The diode is rated for pulsed current up to 480 A and supports freewheeling in inductive switching applications.

What package type does SQP120N10-3M8_GE3 use, and is the drain electrically connected to the tab?

SQP120N10-3M8_GE3 uses the TO-220AB package with an isolated metal tab. The drain terminal is electrically connected to the tab, enabling direct heatsink mounting while requiring electrical isolation of the heatsink unless used as the drain return path.

How does the gate charge of SQP120N10-3M8_GE3 affect its switching performance?

SQP120N10-3M8_GE3 has a total gate charge (Q_g) of 125–190 nC at V_GS = 10 V. This value directly determines required gate driver current and switching transition time: for example, a 2 A driver yields ~95 ns turn-on delay (t_d(on)) and ~138 ns rise time (t_r), balancing speed against EMI and shoot-through risk.

SQP120N10-3M8_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7230 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SQP120N10-3M8_GE3 FAQ

1.How can I place an order for SQP120N10-3M8_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQP120N10-3M8_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQP120N10-3M8_GE3 reliable?

The price and inventory of SQP120N10-3M8_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP120N10-3M8_GE3 is usually 5 days.

3.What payment methods are accepted for SQP120N10-3M8_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP120N10-3M8_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQP120N10-3M8_GE3?

SQP120N10-3M8_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQP120N10-3M8_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQP120N10-3M8_GE3?

For technical support, including SQP120N10-3M8_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP120N10-3M8_GE3 requirements.

6.How does Aetrix verify that SQP120N10-3M8_GE3 is sourced from the original manufacturer or authorized distributors?

All SQP120N10-3M8_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP120N10-3M8_GE3 meets industry standards.

7.What is the process for return or replacement of SQP120N10-3M8_GE3?

All SQP120N10-3M8_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP120N10-3M8_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQP120N10-3M8_GE3 part is unused and in its original packaging.

Return procedure for SQP120N10-3M8_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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