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Vishay Siliconix SQP25N15-52_GE3
- Part No.:
- SQP25N15-52_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP25N15-52_GE3.pdf
- Description:
- MOSFET N-CH 150V 25A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,617
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Product details
Overview
SQP25N15-52_GE3 from Vishay Siliconix is an automotive-grade N-channel enhancement-mode MOSFET rated for 150 V drain-source voltage, 25 A continuous drain current at 25 °C, and 0.052 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-220AB package with low thermal resistance (RthJC = 1.4 °C/W), suited for high-reliability power switching in engine control units and DC-DC converters.
For engineers reviewing the SQP25N15-52_GE3 datasheet, SQP25N15-52_GE3 pinout, SQP25N15-52_GE3 application, or SQP25N15-52_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % Rg and UIS testing, 30 mJ single-pulse avalanche energy rating, and verified performance under 175 °C junction conditions - critical for under-hood automotive power stages.
Technical Context
This MOSFET employs Vishay's TrenchFET® technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 37.9–60 nC, Qgd = 12.2 nC) supports efficient hard-switching in 48 V and 12 V automotive systems, while the integrated body diode exhibits VSD = 0.85–1.5 V at IF = 20 A and VGS = 0 V.
The device is characterized across temperature extremes (−55 °C to +175 °C), with RDS(on) increasing to 0.138 Ω at 175 °C and VGS(th) ranging from 2.5 V to 4.0 V. Its safe operating area (SOA) is defined up to 100 μs pulse width at 25 °C, limited by RDS(on) and avalanche capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum blocking voltage for 48 V battery system transients and load-dump protection |
| RDS(on) @ VGS = 10 V, ID = 15 A | 0.052 Ω - Enables <1.3 W conduction loss at 25 A, reducing heatsink requirements |
| ID (continuous, TC = 25 °C) | 25 A - Supports high-current motor drivers and solenoid controls without derating |
| EAS | 30 mJ - Withstands repetitive inductive switching surges in relay and fuel injector circuits |
| TJ max | +175 °C - Qualified for under-hood operation in engine management and transmission control modules |
| RthJC | 1.4 °C/W - Enables direct heatsink mounting for efficient thermal management in compact enclosures |
| Qg | 37.9–60 nC - Optimized for gate driver ICs with 1–2 A peak output, minimizing switching losses |
Pinout & Package
Package: TO-220AB, through-hole, isolated tab (drain-connected), 3-terminal configuration with standard lead spacing per Vishay drawing 71195. Mounting requires mechanical isolation unless drain is referenced to heatsink potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path from source to load | Electrically connected to metal tab - must be thermally coupled to heatsink and electrically isolated if not at system ground |
| Source | Reference node for gate drive and current return | Low-inductance connection point for shunt sensing and gate driver return path |
| Gate | Control electrode for channel modulation | High-impedance input requiring <100 nA leakage; sensitive to ESD and requires RC snubbing in high-dV/dt environments |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use per stress test requirements including HTOL, TC, UHAST, and ESD - no additional qualification needed for Tier 1 programs |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - eliminates field failures from parametric drift or avalanche weakness |
| TrenchFET® architecture | Reduces specific on-resistance by >20 % vs. planar MOSFETs of same die size - improves power density in space-constrained ECUs |
| Low RthJC (1.4 °C/W) | Enables 107 W power dissipation at TC = 25 °C - supports high-duty-cycle PWM without forced air cooling |
| Enhanced SOA at high TJ | Rated for 16 A continuous current at 125 °C case temperature - maintains functionality during thermal transients in start-stop systems |
Applications
| Engine Control Unit (ECU) Power Stage | Fuel Injector Driver |
|---|---|
Use Scenario: High-side switching of 12 V solenoid loads in gasoline direct injection systems with peak currents up to 25 A. IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization and de-energization with precise 1–2 ms dwell time. Use Value: 30 mJ avalanche energy rating absorbs flyback energy without external clamping, reducing BOM count and PCB area. | Use Scenario: Low-side driver for multi-point port fuel injectors in turbocharged engines operating at ambient up to 125 °C. IC Role / Device Role / Timing Role: Fast-turning N-channel switch enabling precise fuel metering via PWM-controlled on-time. Use Value: 0.052 Ω RDS(on) limits conduction loss to <33 W at 25 A, allowing passive cooling in sealed ECU housings. |
| 48 V Mild Hybrid DC-DC Converter | Transmission Control Module (TCM) Solenoid Interface |
Use Scenario: Synchronous rectification in bidirectional buck-boost converters interfacing 12 V and 48 V domains. IC Role / Device Role / Timing Role: Secondary-side power switch synchronized to primary FET with <33 ns rise time and <20 ns fall time. Use Value: Low Qgd/Qg ratio (≈0.32) minimizes Miller-induced shoot-through risk during high-frequency (100–300 kHz) operation. | Use Scenario: High-current valve actuation in 8-speed automatic transmissions, exposed to vibration and thermal cycling. IC Role / Device Role / Timing Role: Robust power switch driving linear solenoids with 50 A pulsed current capability (ISM). Use Value: AEC-Q101 qualification and −55 °C to +175 °C operation ensure reliability over 15-year vehicle lifetime with no derating at end-of-life junction temperatures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N15F7 | 150 V, 220 A (TC = 25 °C), RDS(on) = 3.8 mΩ - uses PowerFLAT 8x8 HV package, surface-mount only | Requires PCB-level thermal vias and layout redesign; unsuitable for through-hole legacy designs | Select when board space is constrained and high-current parallel operation is needed; not drop-in for TO-220 footprint |
| IXTH25N15P | 150 V, 25 A, RDS(on) = 0.065 Ω - TO-247 package, higher RthJC (0.8 °C/W), no AEC-Q101 certification | Lacks automotive qualification; requires additional system-level validation for automotive deployment | Acceptable for industrial motor drives but not for OEM automotive applications without full requalification |
Compared with STL220N15F7 and IXTH25N15P, the SQP25N15-52_GE3 uniquely combines AEC-Q101 compliance, TO-220AB through-hole compatibility, and validated 175 °C operation - making it the only qualified option for cost-sensitive, thermally demanding automotive power stages where footprint and qualification are non-negotiable.
Availability
SQP25N15-52_GE3 is available at Aetrix Electronics and suitable for engine control units, fuel injector drivers, 48 V mild hybrid converters, and transmission control modules requiring stable component supply across extended automotive production lifecycles.
Supply support for SQP25N15-52_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP25N15-52_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine management, chassis, and electrification systems.
FAQ
What is the maximum continuous drain current rating for SQP25N15-52_GE3 at 125 °C case temperature?
The SQP25N15-52_GE3 supports 16 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures reliable operation in high-ambient under-hood environments where the SQP25N15-52_GE3 is commonly deployed.
Is SQP25N15-52_GE3 qualified to AEC-Q101, and what does that mean for automotive design?
Yes, SQP25N15-52_GE3 is AEC-Q101 qualified, meaning it has passed accelerated stress tests including high-temperature operating life, temperature cycling, and unbiased highly accelerated stress testing. For automotive designs, this eliminates the need for additional component-level qualification, accelerating time-to-market for SQP25N15-52_GE3-based ECUs and TCMs.
What is the typical total gate charge (Qg) of SQP25N15-52_GE3, and how does it affect switching performance?
The SQP25N15-52_GE3 has a typical total gate charge of 37.9 nC (max 60 nC) at VGS = 10 V, VDS = 75 V, and ID = 25 A. This value directly determines gate driver sizing and switching loss - for example, driving SQP25N15-52_GE3 at 100 kHz with a 1 A gate driver yields ~3.8 V/ns slew rate, balancing speed and EMI in SQP25N15-52_GE3-based power stages.
Does SQP25N15-52_GE3 include an integrated body diode, and what are its forward voltage characteristics?
Yes, SQP25N15-52_GE3 includes a monolithic body diode with VSD = 0.85 V (typical) to 1.5 V (max) at IF = 20 A and VGS = 0 V. This diode supports freewheeling in inductive loads like fuel injectors and solenoids, and its soft recovery behavior reduces voltage overshoot during turn-off in SQP25N15-52_GE3 applications.
What is the thermal resistance from junction to case (RthJC) for SQP25N15-52_GE3, and why is it important?
The SQP25N15-52_GE3 has a junction-to-case thermal resistance of 1.4 °C/W, measured from die to the drain-connected metal tab. This low value enables efficient heat transfer to external heatsinks - critical for maintaining TJ ≤ 175 °C in sealed enclosures where the SQP25N15-52_GE3 operates in high-power automotive modules.
SQP25N15-52_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 52mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 60 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 107W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP25N15-52_GE3 FAQ
1.How can I place an order for SQP25N15-52_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP25N15-52_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP25N15-52_GE3 reliable?
The price and inventory of SQP25N15-52_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP25N15-52_GE3 is usually 5 days.
3.What payment methods are accepted for SQP25N15-52_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP25N15-52_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP25N15-52_GE3?
SQP25N15-52_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP25N15-52_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP25N15-52_GE3?
For technical support, including SQP25N15-52_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP25N15-52_GE3 requirements.
6.How does Aetrix verify that SQP25N15-52_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP25N15-52_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP25N15-52_GE3 meets industry standards.
7.What is the process for return or replacement of SQP25N15-52_GE3?
All SQP25N15-52_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP25N15-52_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP25N15-52_GE3 part is unused and in its original packaging.
Return procedure for SQP25N15-52_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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