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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQP50N06-09L_GE3

Name: SQP50N06-09L_GE3
Brand: Vishay Siliconix
SKU: SQP50N06-09L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQP50N06-09L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SQP50N06-09L_GE3.pdf

Description:: MOSFET N-CH 60V 50A TO220AB

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Product details

Overview

SQP50N06-09L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V V_DS, 50 A continuous drain current at T_C = 25 °C, and R_DS(on) of 9.0 mΩ at V_GS = 10 V. It operates up to +175 °C junction temperature and is housed in a TO-220AB package, targeting high-reliability motor control and DC-DC conversion in under-hood automotive systems.

For engineers reviewing the SQP50N06-09L_GE3 datasheet, SQP50N06-09L_GE3 pinout, SQP50N06-09L_GE3 application, or SQP50N06-09L_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, low gate charge (Q_g = 48–72 nC), and robust thermal performance with R_thJC = 1.1 °C/W.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in hard-switched automotive power stages. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) ensures stable turn-on across temperature, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device features fully characterized dynamic parameters including C_iss = 2451–3065 pF, C_oss = 435–545 pF, and Q_gd = 13.5 nC - enabling accurate snubber design and EMI prediction. Its safe operating area (SOA) is defined up to 100 ms pulse width and 60 V, supporting surge-tolerant load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive battery systems and transient clamping to ISO 7637-2 Pulse 5a.
R_DS(on) @ V_GS = 10 V	9.0 mΩ - Enables ≤ 22.5 W conduction loss at 50 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous, T_C = 25 °C)	50 A - Supports high-current motor drivers and starter solenoid interfaces without parallel devices.
Q_g (total gate charge)	48–72 nC - Determines driver power requirement and switching loss; enables use with standard 1-A gate drivers.
T_J max	+175 °C - Qualified for under-hood operation per AEC-Q101, eliminating derating in engine control units.
E_AS	115 mJ - Specifies single-pulse avalanche energy handling capability, critical for inductive load switching reliability.
R_thJC	1.1 °C/W - Confirms efficient heat transfer to heatsink; allows >100 W power dissipation with modest thermal interface.

Pinout & Package

Package: TO-220AB (3-lead, through-hole, isolated tab). Tab is electrically connected to drain (D); mounting screw provides mechanical fixation and thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives PWM signal; requires <1.7 Ω gate resistance to limit ringing and ensure t_d(on) ≤ 15 ns.
D (Drain)	High-side power node	Connected to tab; must be isolated from heatsink unless referenced to system ground; handles full load current and avalanche stress.
S (Source)	Power return / reference	Serves as local ground reference for gate drive; routing must minimize inductance to avoid shoot-through during switching.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine management, transmission control, and ADAS power stages.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - no field failures due to latent gate oxide defects.
TrenchFET® architecture	Delivers 23 % lower R_DS(on) vs. planar MOSFETs at same die size, improving power density in compact ECUs.
Low Q_gd/Q_g ratio (0.28)	Reduces Miller effect, enabling stable high-speed switching (>100 kHz) without external Miller clamp circuits.
175 °C TJ operation	Eliminates need for thermal derating in sealed enclosures; supports integration into fanless power modules near exhaust manifolds.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 40 A and 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration; handles inductive kickback and repetitive UIS events. Use Value: 115 mJ E_AS and 48 A I_AS ensure reliable operation over 10-year vehicle lifetime without snubber components.	Use Scenario: Variable-speed control of 24 V blower motors in climate control systems, requiring bidirectional current sensing and thermal resilience. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; manages regenerative braking energy via body diode conduction. Use Value: R_DS(on) = 13 mΩ @ V_GS = 4.5 V enables direct microcontroller GPIO drive without level-shifting, simplifying PCB layout.
12 V/48 V DC-DC Converter Primary Switch	Electric Power Steering (EPS) Assist Motor Driver
Use Scenario: Primary-side switch in synchronous buck converter supplying 5 V/3.3 V rails to ADAS sensors and radar modules. IC Role / Device Role / Timing Role: Fast-switching power transistor with low Q_g and tight C_iss/C_oss tolerance for ZVS-compatible designs. Use Value: C_iss = 2451–3065 pF and Q_gd = 13.5 nC support <100 ns turn-off delay, minimizing dead-time losses at 300 kHz switching.	Use Scenario: Half-bridge leg in 3-phase inverter driving 400 W assist motor, subject to vibration, thermal cycling, and load dumps. IC Role / Device Role / Timing Role: Low-R_DS(on) phase-leg switch with integrated body diode for freewheeling and regeneration. Use Value: AEC-Q101 qualification and 175 °C rating guarantee uninterrupted torque delivery during sustained hill-climb operation at ambient >105 °C.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 40 A and 10 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main power switch in low-side driver configuration; handles inductive kickback and repetitive UIS events.

Use Value: 115 mJ E_AS and 48 A I_AS ensure reliable operation over 10-year vehicle lifetime without snubber components.

Use Scenario: Variable-speed control of 24 V blower motors in climate control systems, requiring bidirectional current sensing and thermal resilience.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage; manages regenerative braking energy via body diode conduction.

Use Value: R_DS(on) = 13 mΩ @ V_GS = 4.5 V enables direct microcontroller GPIO drive without level-shifting, simplifying PCB layout.

12 V/48 V DC-DC Converter Primary Switch

Electric Power Steering (EPS) Assist Motor Driver

Use Scenario: Primary-side switch in synchronous buck converter supplying 5 V/3.3 V rails to ADAS sensors and radar modules.

IC Role / Device Role / Timing Role: Fast-switching power transistor with low Q_g and tight C_iss/C_oss tolerance for ZVS-compatible designs.

Use Value: C_iss = 2451–3065 pF and Q_gd = 13.5 nC support <100 ns turn-off delay, minimizing dead-time losses at 300 kHz switching.

Use Scenario: Half-bridge leg in 3-phase inverter driving 400 W assist motor, subject to vibration, thermal cycling, and load dumps.

IC Role / Device Role / Timing Role: Low-R_DS(on) phase-leg switch with integrated body diode for freewheeling and regeneration.

Use Value: AEC-Q101 qualification and 175 °C rating guarantee uninterrupted torque delivery during sustained hill-climb operation at ambient >105 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF6AG	R_DS(on) = 1.8 mΩ @ 10 V (lower), but only rated to +150 °C and not AEC-Q101 qualified.	Suitable for industrial DC-DC converters where automotive qualification is not required.	Prefer SQP50N06-09L_GE3 when under-hood placement or OEM compliance is mandatory.
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V (5× higher), no AEC-Q101, R_thJC = 1.5 °C/W (worse thermal coupling).	Limited to non-automotive, low-duty-cycle switching like lighting ballasts or lab power supplies.	SQP50N06-09L_GE3 delivers 80 % lower conduction loss and guaranteed automotive reliability - not interchangeable without redesign.

Compared with STL220N6LF6AG and IRF540NPBF, the SQP50N06-09L_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and sub-10-mΩ on-resistance - making it the only drop-in solution for thermally aggressive, safety-critical automotive power stages requiring zero derating.

Availability

SQP50N06-09L_GE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC motor drives, and EPS power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing compliant with IATF 16949.

Supply support for SQP50N06-09L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQP50N06-09L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature power switching in next-generation vehicle electrification systems.

FAQ

What is the maximum continuous drain current for SQP50N06-09L_GE3 at 125 °C case temperature?

The SQP50N06-09L_GE3 supports 49 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from its 50 A rating at 25 °C, maintaining safe operation in high-ambient environments such as engine compartments. The device's R_thJC = 1.1 °C/W enables this performance with appropriate heatsinking.

Is SQP50N06-09L_GE3 suitable for synchronous rectification in a 48 V DC-DC converter?

Yes, SQP50N06-09L_GE3 is suitable for synchronous rectification due to its low R_DS(on) of 9.0 mΩ at V_GS = 10 V and fast switching characteristics (t_f = 8–12 ns). Its body diode forward voltage V_SD = 0.82–1.5 V at 20 A supports efficient freewheeling, and the 175 °C rating ensures stability under sustained 48 V converter loads.

Does SQP50N06-09L_GE3 have lead (Pb)-free and halogen-free construction?

Yes, SQP50N06-09L_GE3 is lead (Pb)-free and halogen-free, as confirmed by the ordering information in the datasheet (suffix "-GE3"). It complies with RoHS Directive 2011/65/EU and Vishay's material categorization standards per document 99912.

What is the gate threshold voltage range for SQP50N06-09L_GE3, and how does it affect drive circuit design?

The gate threshold voltage V_GS(th) for SQP50N06-09L_GE3 is 1.5–2.5 V at T_J = 25 °C. This tight range ensures consistent turn-on behavior across production lots and temperatures, allowing reliable operation with 3.3 V or 5 V logic-level gate drivers without external level shifting - critical for integration into compact automotive control modules.

How is the avalanche capability of SQP50N06-09L_GE3 validated, and what does EAS = 115 mJ mean in practice?

The SQP50N06-09L_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC JESD24-11. Its EAS = 115 mJ rating means it can safely absorb 115 millijoules of inductive energy in a single event - sufficient to handle worst-case flyback energy from a 50 A, 60 V inductive load with L = 0.1 mH, as verified in automotive load-dump and solenoid drive applications.

SQP50N06-09L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3065 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SQP50N06-09L_GE3 FAQ

1.How can I place an order for SQP50N06-09L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQP50N06-09L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQP50N06-09L_GE3 reliable?

The price and inventory of SQP50N06-09L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP50N06-09L_GE3 is usually 5 days.

3.What payment methods are accepted for SQP50N06-09L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP50N06-09L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQP50N06-09L_GE3?

SQP50N06-09L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQP50N06-09L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQP50N06-09L_GE3?

For technical support, including SQP50N06-09L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP50N06-09L_GE3 requirements.

6.How does Aetrix verify that SQP50N06-09L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQP50N06-09L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP50N06-09L_GE3 meets industry standards.

7.What is the process for return or replacement of SQP50N06-09L_GE3?

All SQP50N06-09L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP50N06-09L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQP50N06-09L_GE3 part is unused and in its original packaging.

Return procedure for SQP50N06-09L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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