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Vishay Siliconix SQP50P03-07_GE3
- Part No.:
- SQP50P03-07_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SQP50P03-07_GE3.pdf
- Description:
- MOSFET P-CH 30V 50A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:8,283
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Product details
Overview
SQP50P03-07_GE3 from Vishay Siliconix is an automotive-grade P-channel TrenchFET® MOSFET with -30 V VDS, 0.0070 Ω RDS(on) at -10 V VGS, and -50 A continuous drain current, designed for high-current DC load switching in engine control units and battery disconnect circuits.
For engineers reviewing the SQP50P03-07_GE3 datasheet, SQP50P03-07_GE3 pinout, SQP50P03-07_GE3 application, or SQP50P03-07_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1 °C/W), AEC-Q101 qualification status, TO-220AB package mechanical dimensions, and real-world diode conduction behavior under zero-gate conditions.
Technical Context
This MOSFET uses trench gate technology to achieve low on-resistance and fast switching with 103.5 nC total gate charge and 11 ns turn-on delay. Its -1.5 V to -2.5 V gate threshold enables robust drive compatibility with 3.3 V and 5 V microcontrollers in automotive power rails.
The device features a drain-connected tab for direct heatsink mounting, 125 mJ single-pulse avalanche energy rating, and guaranteed 100 % Rg and UIS testing - critical for transient-heavy under-hood environments where load dump and inductive kickback occur.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - supports 24 V automotive systems with 2× safety margin against load dump transients |
| RDS(on) @ -10 V | 0.0070 Ω - enables ≤ 10.5 W conduction loss at -50 A, reducing heatsink requirements |
| ID Continuous | -50 A @ TC = 25 °C - rated for sustained high-current loads such as starter motor precharge or HVAC blower control |
| EAS | 125 mJ - withstands repetitive inductive energy spikes without failure in solenoid or relay driver applications |
| RthJC | 1 °C/W - allows direct thermal path to heatsink, enabling >100 W dissipation with modest thermal interface material |
| VGS(th) | -1.5 to -2.5 V - ensures reliable turn-on with standard logic-level gate drivers and avoids false triggering near ground |
| Qg | 103.5 nC typical - balances switching speed and gate drive power in 10–100 kHz PWM motor control |
Pinout & Package
TO-220AB package with isolated mounting hole, drain-connected tab, and 3-pin vertical lead frame. Dimensions per Vishay Doc #71195: D = 15.17 mm max, E = 10.28 mm max, L = 13.69 mm max, tab thickness 1.47 mm ±0.15 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Left) | Source | Reference node for gate drive; connects to system ground or negative rail in high-side switch configurations |
| Pin 2 (Center) | Gate | Control input requiring <104 nC charge; sensitive to ESD; must be driven with <±20 V swing |
| Pin 3 (Right) | Drain | High-current output node; electrically tied to metal tab - requires isolation from heatsink unless drain is common reference |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements including HTOL, TC, and UHAST |
| TrenchFET® architecture | Delivers 23% lower RDS(on) vs. planar P-channel equivalents at same die size, improving power density |
| 100 % Rg tested | Ensures gate resistance between 1.42–4.28 Ω, guaranteeing predictable rise/fall times and EMI control |
| Drain-connected tab | Enables low-inductance, high-current thermal path to heatsink while simplifying mechanical mounting in space-constrained ECUs |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated vehicle production |
Applications
| Engine Control Unit (ECU) Power Distribution | Battery Disconnect Switch |
|---|---|
Use Scenario: Isolating 12 V/24 V battery feed during key-off to prevent parasitic drain in modern vehicles with always-on modules. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as solid-state main battery contactor with controlled turn-on slew rate. Use Value: 0.0070 Ω RDS(on) limits voltage drop to <0.35 V at 50 A, preserving cold-crank margin while eliminating relay wear and arcing. |
Use Scenario: Safely disconnecting auxiliary battery banks in dual-battery systems during alternator overvoltage or fault conditions. IC Role / Device Role / Timing Role: Load switch controlling bidirectional current flow between starter and house batteries with reverse polarity protection. Use Value: -30 V VDS rating accommodates 28 V alternator peaks; 125 mJ EAS handles inductive flyback from solenoid-based monitoring circuits. |
| HVAC Blower Motor Control | Transmission Solenoid Driver |
Use Scenario: PWM-controlled speed regulation of cabin air blower motors in premium automotive HVAC systems. IC Role / Device Role / Timing Role: Low-side switch (source grounded) delivering up to 50 A pulsed current with minimal conduction loss. Use Value: 103.5 nC Qg enables clean 20 kHz switching with <2 W gate drive loss using standard 1 A drivers, reducing thermal stress on MCU GPIOs. |
Use Scenario: Driving linear or on/off transmission pressure control solenoids requiring precise current regulation and fast response. IC Role / Device Role / Timing Role: High-current switch interfacing with current-sense amplifier feedback loop for closed-loop solenoid current control. Use Value: 1 Ω/W RthJC allows direct heatsink mounting, maintaining <125 °C junction temperature even during 100% duty cycle engagement at 45 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF4905PBF | RDS(on) = 0.02 Ω @ -10 V; 2× higher on-resistance; TO-220AB package; no AEC-Q101 qualification | Limited to non-automotive industrial use due to lack of automotive reliability validation | Select only for cost-sensitive non-automotive designs where 0.02 Ω loss is acceptable and qualification is not required |
| STP55P03LH | RDS(on) = 0.0065 Ω @ -10 V; slightly lower on-resistance; same TO-220AB; AEC-Q101 qualified | Higher gate charge (120 nC) increases driver power requirement and slows switching vs. SQP50P03-07_GE3 | Prefer when lowest possible conduction loss is critical and gate drive capability supports higher Qg |
Compared with IRF4905PBF and STP55P03LH, SQP50P03-07_GE3 offers optimal balance of automotive qualification, 103.5 nC gate charge, and 0.0070 Ω RDS(on), making it ideal for ECU power distribution where reliability, thermal efficiency, and driver compatibility are jointly constrained.
Availability
SQP50P03-07_GE3 is available at Aetrix Electronics and suitable for engine control units, battery disconnect systems, HVAC blower drives, and transmission solenoid control requiring stable component supply across automotive production lifecycles.
Supply support for SQP50P03-07_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQP50P03-07_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel portfolio, engineered specifically for high-current, high-temperature under-hood power switching with validated long-term reliability.
FAQ
What is the maximum junction temperature rating for SQP50P03-07_GE3?
The SQP50P03-07_GE3 has an operating junction temperature range of -55 °C to +175 °C, validated per AEC-Q101 requirements. This 175 °C rating enables deployment in high-ambient locations like engine compartments, provided thermal design maintains TJ ≤ 175 °C under worst-case power dissipation and ambient conditions. The SQP50P03-07_GE3 datasheet specifies derating curves for continuous current versus case temperature.
Is SQP50P03-07_GE3 pin-compatible with other TO-220AB P-channel MOSFETs?
SQP50P03-07_GE3 uses standard TO-220AB pinout (Source-Gate-Drain left-to-right, drain connected to tab), matching industry layout conventions. However, pin compatibility alone does not guarantee functional equivalence - RDS(on), Qg, and thermal performance differ significantly across vendors. Always verify gate drive requirements and thermal interface design when substituting the SQP50P03-07_GE3.
Does SQP50P03-07_GE3 include integrated ESD protection?
The SQP50P03-07_GE3 does not feature integrated ESD protection circuitry. Its gate oxide is rated for ±20 V VGS, and gate-source leakage is specified at ±100 nA - consistent with standard discrete MOSFET construction. External TVS or RC snubbers are recommended on gate traces in automotive harness environments where ESD events exceed 8 kV contact discharge.
What is the typical gate threshold voltage range for SQP50P03-07_GE3?
The SQP50P03-07_GE3 has a gate threshold voltage (VGS(th)) range of -1.5 V to -2.5 V at ID = -250 μA, measured per JEDEC JESD84-A. This low-threshold range ensures full enhancement with 3.3 V logic-level drivers and provides noise margin against spurious turn-on in noisy automotive electrical systems. The SQP50P03-07_GE3 maintains stable VGS(th) across temperature, varying less than ±0.3 V from -40 °C to +150 °C.
Can SQP50P03-07_GE3 be used in synchronous rectification applications?
No - the SQP50P03-07_GE3 is optimized for unidirectional switching in high-side or low-side load control, not bidirectional synchronous rectification. Its body diode forward voltage is -0.9 V to -1.5 V at -45 A, and reverse recovery characteristics are not characterized or guaranteed for hard-commutated AC waveforms. For synchronous rectification, dedicated low-VF, fast-recovery P-channel MOSFETs with specified trr and Qrr should be selected instead of the SQP50P03-07_GE3.
SQP50P03-07_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 155 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5380 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
SQP50P03-07_GE3 FAQ
1.How can I place an order for SQP50P03-07_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQP50P03-07_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQP50P03-07_GE3 reliable?
The price and inventory of SQP50P03-07_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP50P03-07_GE3 is usually 5 days.
3.What payment methods are accepted for SQP50P03-07_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP50P03-07_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQP50P03-07_GE3?
SQP50P03-07_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQP50P03-07_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQP50P03-07_GE3?
For technical support, including SQP50P03-07_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP50P03-07_GE3 requirements.
6.How does Aetrix verify that SQP50P03-07_GE3 is sourced from the original manufacturer or authorized distributors?
All SQP50P03-07_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP50P03-07_GE3 meets industry standards.
7.What is the process for return or replacement of SQP50P03-07_GE3?
All SQP50P03-07_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP50P03-07_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQP50P03-07_GE3 part is unused and in its original packaging.
Return procedure for SQP50P03-07_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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