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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQP60N06-15_GE3

Name: SQP60N06-15_GE3
Brand: Vishay Siliconix
SKU: SQP60N06-15_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQP60N06-15_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SQP60N06-15_GE3.pdf

Description:: MOSFET N-CH 60V 56A TO220AB

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Product details

Overview

SQP60N06-15_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 56 A continuous drain current at 25 °C, and 0.015 Ω R_DS(on) at V_GS = 10 V, designed for high-efficiency DC-DC converters and motor control in under-hood automotive systems.

For engineers reviewing the SQP60N06-15_GE3 datasheet, SQP60N06-15_GE3 pinout, SQP60N06-15_GE3 application, or SQP60N06-15_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction temperature rating, low thermal resistance (R_thJC = 1.4 °C/W), and 100 % R_g and UIS tested reliability for harsh-environment switching.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching, with gate charge parameters (Q_g = 33–50 nC, Q_gd = 8.8 nC) enabling efficient operation in hard-switched 48 V automotive subsystems. Its dynamic characteristics-including C_iss = 1983–2480 pF and t_d(on)/t_f = 11–17 ns / 7–11 ns-support high-frequency PWM control up to 200 kHz.

The device integrates a robust body diode with V_SD = 0.9–1.5 V at I_F = 30 A and I_SM = 190 A pulsed capability, supporting synchronous rectification and bidirectional energy recovery in regenerative braking circuits. Thermal design is enabled by TO-220AB packaging with direct-drain thermal path and R_thJC = 1.4 °C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V nominal battery systems including load dump transients.
R_DS(on) @ V_GS = 10 V	0.015 Ω - Enables <1.4 W conduction loss at 30 A, reducing heatsink requirements in space-constrained modules.
I_D (continuous, T_C = 25 °C)	56 A - Supports high-current motor drive stages without parallel devices in compact PCB layouts.
E_AS	42 mJ - Avalanche-rated for reliable operation during inductive turn-off events in solenoid and relay drivers.
T_J max	+175 °C - Qualified for under-hood environments per AEC-Q101, enabling placement near engines or powertrains.
Q_g	33–50 nC - Low-to-moderate gate charge allows efficient driving with standard gate drivers (e.g., UCC27531) at ≤200 kHz.
R_thJC	1.4 °C/W - Enables direct heatsink mounting for >80 W power dissipation with minimal thermal interface resistance.

Pinout & Package

Package: TO-220AB, through-hole, single-channel N-channel MOSFET with drain-connected tab for thermal and electrical connection. Tab is electrically connected to Drain (Pin 2).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring 2.5–3.5 V threshold; driven by logic-level or dedicated gate driver with ≤2.4 Ω gate resistance.
2 (D)	Drain	Main high-side switching node; tab-connected for low-inductance, high-current return path and thermal conduction to heatsink.
3 (S)	Source	Power ground reference for gate drive and current sensing; tied to system source node or shunt resistor.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and ESD testing-required for engine control, transmission, and ADAS power stages.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-reduces field failure risk in motor drives.
TrenchFET® technology	Optimized cell layout delivers 20 % lower R_DS(on) × Q_g figure-of-merit vs. planar MOSFETs-improves efficiency in 48 V/12 V DC-DC converters.
Low R_thJC = 1.4 °C/W	Enables >80 W continuous power dissipation with standard TO-220 heatsinks-eliminates need for costly thermal vias or copper pours.
Body diode with soft recovery	V_SD = 0.9–1.5 V and low Q_rr support efficient freewheeling in half-bridge configurations without external Schottky clamps.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-speed switching of fuel injectors in gasoline direct injection (GDI) systems with 12 V supply and peak currents up to 50 A. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization with precise 1–5 ms pulse width modulation. Use Value: 0.015 Ω R_DS(on) minimizes coil heating and improves fuel metering accuracy; 175 °C rating ensures reliability near hot engine blocks.	Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 48 V and 12 V vehicle networks. IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 100–200 kHz with zero-voltage switching (ZVS) assist. Use Value: Low Q_gd/Q_g ratio and fast t_f = 7–11 ns reduce switching losses; AEC-Q101 compliance guarantees long-term stability across thermal cycles.
Electric Power Steering (EPS) Motor Phase Leg	Automotive HVAC Blower Motor Controller
Use Scenario: Half-bridge phase leg in 3-phase EPS motor drive handling 30–45 A RMS current and regenerative braking energy. IC Role / Device Role / Timing Role: N-channel high- and low-side switch (with complementary high-side driver) managing PWM commutation and current regeneration. Use Value: 190 A pulsed drain current and 42 mJ E_AS withstand motor back-EMF spikes; body diode enables efficient energy recirculation.	Use Scenario: Single-phase AC induction motor control in cabin HVAC systems using variable-frequency drive (VFD) topology. IC Role / Device Role / Timing Role: Inverter switch modulating 12 V DC input into variable-frequency AC output via H-bridge configuration. Use Value: 175 °C TJ rating supports sealed enclosure operation; TO-220AB package simplifies mechanical mounting on metal chassis for EMI shielding and cooling.

Engine Control Unit (ECU) Fuel Injector Driver

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-speed switching of fuel injectors in gasoline direct injection (GDI) systems with 12 V supply and peak currents up to 50 A.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization/de-energization with precise 1–5 ms pulse width modulation.

Use Value: 0.015 Ω R_DS(on) minimizes coil heating and improves fuel metering accuracy; 175 °C rating ensures reliability near hot engine blocks.

Use Scenario: Primary-side synchronous rectifier in bi-directional buck-boost converter linking 48 V and 12 V vehicle networks.

IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 100–200 kHz with zero-voltage switching (ZVS) assist.

Use Value: Low Q_gd/Q_g ratio and fast t_f = 7–11 ns reduce switching losses; AEC-Q101 compliance guarantees long-term stability across thermal cycles.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Motor Controller

Use Scenario: Half-bridge phase leg in 3-phase EPS motor drive handling 30–45 A RMS current and regenerative braking energy.

IC Role / Device Role / Timing Role: N-channel high- and low-side switch (with complementary high-side driver) managing PWM commutation and current regeneration.

Use Value: 190 A pulsed drain current and 42 mJ E_AS withstand motor back-EMF spikes; body diode enables efficient energy recirculation.

Use Scenario: Single-phase AC induction motor control in cabin HVAC systems using variable-frequency drive (VFD) topology.

IC Role / Device Role / Timing Role: Inverter switch modulating 12 V DC input into variable-frequency AC output via H-bridge configuration.

Use Value: 175 °C TJ rating supports sealed enclosure operation; TO-220AB package simplifies mechanical mounting on metal chassis for EMI shielding and cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N6LF6AG	Lower R_DS(on) = 0.0095 Ω but higher Q_g = 63 nC; DFN5x6 package, no through-hole option.	Requires PCB redesign for surface-mount assembly; better suited for high-density, thermally managed modules.	Select when board space is constrained and thermal management uses copper islands or vapor chamber cooling.
IRFZ44NPBF	Higher R_DS(on) = 0.028 Ω; non-automotive grade; R_thJC = 1.7 °C/W; no AEC-Q101 or UIS testing.	Limited to non-safety-critical 12 V applications like aftermarket lighting or fans; not suitable for under-hood deployment.	Select only for cost-sensitive, non-automotive industrial or consumer designs where qualification and reliability are secondary.

Compared with STL130N6LF6AG and IRFZ44NPBF, SQP60N06-15_GE3 uniquely balances automotive qualification, through-hole manufacturability, and thermal performance-making it optimal for production-grade engine bay and chassis electronics where reliability, serviceability, and thermal margin are prioritized over ultra-low R_DS(on).

Availability

SQP60N06-15_GE3 is available at Aetrix Electronics and suitable for automotive powertrain control, 48 V mild hybrid conversion, and electric power steering systems requiring stable component supply across multi-year vehicle production lifecycles.

Supply support for SQP60N06-15_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQP60N06-15_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in engine control, transmission, and ADAS power stages.

FAQ

What is the maximum continuous drain current rating for SQP60N06-15_GE3 at 125 °C case temperature?

The SQP60N06-15_GE3 supports 32 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board-level thermal resistance in the target application. The SQP60N06-15_GE3 maintains full functionality within this limit when mounted on a properly heatsinked PCB.

Is SQP60N06-15_GE3 suitable for use in synchronous rectification topologies?

Yes, SQP60N06-15_GE3 is suitable for synchronous rectification due to its low R_DS(on) = 0.015 Ω, fast switching times (t_f = 7–11 ns), and integrated body diode with V_SD = 0.9–1.5 V at 30 A. Its 100 % UIS testing ensures robustness during reverse recovery transitions. The SQP60N06-15_GE3 performs reliably in forward and reverse conduction modes typical of LLC and phase-shifted full-bridge converters.

Does SQP60N06-15_GE3 require a negative gate voltage for safe turn-off in high-dv/dt environments?

No, SQP60N06-15_GE3 does not require negative gate drive. Its gate threshold voltage range is 2.5–3.5 V, and it is fully characterized for reliable turn-off with 0 V gate bias. However, applying –5 V to –10 V can improve noise immunity in high-dv/dt automotive environments. The SQP60N06-15_GE3 gate oxide is rated for ±20 V, supporting such biasing without degradation.

What is the gate resistance (R_g) specification for SQP60N06-15_GE3, and how does it impact driver selection?

The SQP60N06-15_GE3 has a typical gate resistance of 1.6 Ω (min 0.8 Ω, max 2.4 Ω), measured at 1 MHz. This internal R_g influences gate driver sizing: for 100–200 kHz switching, a driver capable of ≥2 A peak current (e.g., Texas Instruments UCC27531) ensures clean edges and minimizes switching losses. The SQP60N06-15_GE3's R_g value helps dampen ringing without requiring large external gate resistors.

How is the thermal performance of SQP60N06-15_GE3 validated for automotive under-hood applications?

The SQP60N06-15_GE3 is validated per AEC-Q101 with extended temperature cycling (–55 °C to +175 °C), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS). Its R_thJC = 1.4 °C/W is measured on FR-4 PCB with 1"² copper, and junction temperature is monitored during life testing at 175 °C. The SQP60N06-15_GE3 meets all thermal stress requirements for under-hood deployment in production vehicles.

SQP60N06-15_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SQP60N06-15_GE3 FAQ

1.How can I place an order for SQP60N06-15_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQP60N06-15_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQP60N06-15_GE3 reliable?

The price and inventory of SQP60N06-15_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP60N06-15_GE3 is usually 5 days.

3.What payment methods are accepted for SQP60N06-15_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP60N06-15_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQP60N06-15_GE3?

SQP60N06-15_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQP60N06-15_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQP60N06-15_GE3?

For technical support, including SQP60N06-15_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP60N06-15_GE3 requirements.

6.How does Aetrix verify that SQP60N06-15_GE3 is sourced from the original manufacturer or authorized distributors?

All SQP60N06-15_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP60N06-15_GE3 meets industry standards.

7.What is the process for return or replacement of SQP60N06-15_GE3?

All SQP60N06-15_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP60N06-15_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQP60N06-15_GE3 part is unused and in its original packaging.

Return procedure for SQP60N06-15_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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