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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQP90142E_GE3

Name: SQP90142E_GE3
Brand: Vishay Siliconix
SKU: SQP90142E_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQP90142E_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SQP90142E_GE3.pdf

Description:: MOSFET N-CH 200V 78.5A TO220AB

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Product details

Overview

SQP90142E_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 200 V drain-source voltage, 78.5 A continuous drain current at 25 °C, and 0.0153 Ω R_DS(on) at V_GS = 10 V. It operates up to +175 °C junction temperature in TO-220AB package and serves as a high-current switching element in DC-DC converters and motor control stages of EV traction inverters and 48 V mild-hybrid systems.

For engineers reviewing the SQP90142E_GE3 datasheet, SQP90142E_GE3 pinout, SQP90142E_GE3 application, or SQP90142E_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS tested reliability, low 0.6 °C/W junction-to-case thermal resistance, and validated performance under pulsed avalanche stress (E_AS = 205 mJ).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-power automotive subsystems. Its gate charge profile (Q_g = 55–85 nC) and dynamic parameters-including C_iss = 3200–4200 pF and Q_gd = 16.5 nC-support efficient operation in hard-switched topologies up to 100 kHz.

The device integrates a robust body diode with t_rr = 129–260 ns and Q_rr = 685–1400 nC, enabling reliable freewheeling in synchronous rectification and bidirectional energy transfer circuits without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Withstands peak bus voltages in 48 V and 800 V automotive architectures with margin.
R_DS(on) @ V_GS = 10 V, I_D = 20 A	0.0153 Ω - Enables ≤1.5 W conduction loss at 40 A, reducing heatsink requirements.
I_D (continuous, T_C = 25 °C)	78.5 A - Supports high-current motor phase legs and battery disconnect switches.
T_J max	+175 °C - Certified for under-hood environments per AEC-Q101 Rev G.
R_thJC	0.6 °C/W - Allows direct mounting to heatsinks with minimal thermal interface resistance.
E_AS	205 mJ - Sustains single-pulse inductive energy during fault conditions without failure.
Q_g	55–85 nC - Balances gate drive power and switching speed for 12 V gate drivers.

Pinout & Package

Package: TO-220AB (standard through-hole, isolated tab, 3-pin). Mounting requires mechanical isolation unless drain is referenced to heatsink potential.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left, when viewed from front with label side up)	Source (S)	Low-side return path; connects directly to PCB ground plane or source rail.
Pin 2 (Center)	Drain (D)	Main power terminal; electrically connected to metal tab for thermal conduction.
Pin 3 (Right)	Gate (G)	Control input; requires < ±20 V rating and low-inductance routing to minimize ringing.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and UHAST per Rev G.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness.
TrenchFET® architecture	Delivers lower R_DS(on) × area than planar MOSFETs, improving power density in space-constrained modules.
Low R_thJC (0.6 °C/W)	Enables >200 W dissipation with standard heatsinking, eliminating need for forced air in many applications.
Body diode with t_rr ≤ 260 ns	Reduces switching losses and EMI in bidirectional converters without external diode replacement.

Applications

Automotive Traction Inverter	48 V Mild-Hybrid DC-DC Converter
Use Scenario: High-efficiency bidirectional power conversion between 48 V and 12 V rails in start-stop and regenerative braking systems. IC Role / Device Role / Timing Role: Primary high-side switch in interleaved synchronous buck topology operating at 100–200 kHz. Use Value: Low R_DS(on) and fast Q_gd/Q_gs ratio reduce conduction and turn-off losses, achieving >96 % efficiency at 5 kW output.	Use Scenario: Isolated DC-DC stage converting 48 V battery to 12 V auxiliary supply for ADAS ECUs and infotainment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge configuration. Use Value: Body diode soft recovery and low forward voltage (V_SD = 0.82 V @ 20 A) minimize reverse-recovery spikes and improve light-load regulation.
On-Board Charger (OBC) Input Stage	EV Battery Disconnect Switch
Use Scenario: AC-DC PFC boost switch handling up to 6.6 kW input in single-phase OBC modules. IC Role / Device Role / Timing Role: Fast-switching boost transistor with gate drive optimized for critical conduction mode (CrCM). Use Value: Low C_oss (1300–1750 pF) and high g_fs (54 S typical) enable stable CrCM operation across wide line/load ranges.	Use Scenario: High-reliability main contactor replacement in battery management systems for commercial EVs. IC Role / Device Role / Timing Role: Solid-state isolation switch controlling 200–400 V battery pack connection to inverter and charger. Use Value: AEC-Q101 qualification and 205 mJ E_AS ensure safe interruption of fault currents up to 170 A without destructive failure.

Automotive Traction Inverter

48 V Mild-Hybrid DC-DC Converter

Use Scenario: High-efficiency bidirectional power conversion between 48 V and 12 V rails in start-stop and regenerative braking systems.

IC Role / Device Role / Timing Role: Primary high-side switch in interleaved synchronous buck topology operating at 100–200 kHz.

Use Value: Low R_DS(on) and fast Q_gd/Q_gs ratio reduce conduction and turn-off losses, achieving >96 % efficiency at 5 kW output.

Use Scenario: Isolated DC-DC stage converting 48 V battery to 12 V auxiliary supply for ADAS ECUs and infotainment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge configuration.

Use Value: Body diode soft recovery and low forward voltage (V_SD = 0.82 V @ 20 A) minimize reverse-recovery spikes and improve light-load regulation.

On-Board Charger (OBC) Input Stage

EV Battery Disconnect Switch

Use Scenario: AC-DC PFC boost switch handling up to 6.6 kW input in single-phase OBC modules.

IC Role / Device Role / Timing Role: Fast-switching boost transistor with gate drive optimized for critical conduction mode (CrCM).

Use Value: Low C_oss (1300–1750 pF) and high g_fs (54 S typical) enable stable CrCM operation across wide line/load ranges.

Use Scenario: High-reliability main contactor replacement in battery management systems for commercial EVs.

IC Role / Device Role / Timing Role: Solid-state isolation switch controlling 200–400 V battery pack connection to inverter and charger.

Use Value: AEC-Q101 qualification and 205 mJ E_AS ensure safe interruption of fault currents up to 170 A without destructive failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	R_DS(on) = 0.013 Ω @ 10 V (lower), but T_J max = +175 °C and AEC-Q101 qualified; TO-247 package.	Higher power density but requires larger footprint and different heatsink interface.	Prefer when board space allows TO-247 and lower R_DS(on) justifies added cost and layout change.
IXTH76N20X2	R_DS(on) = 0.018 Ω @ 10 V (higher), T_J max = +175 °C, no AEC-Q101 claim; TO-247 package.	Industrial-rated only; not validated for automotive temperature cycling or humidity testing.	Select only for non-automotive industrial motor drives where AEC-Q101 is not mandated.

Compared with STL220N5LF8AG and IXTH76N20X2, the SQP90142E_GE3 offers optimal balance of automotive qualification, TO-220AB compatibility, and thermal performance-enabling drop-in replacement in legacy AEC-Q101 designs without requalification or mechanical redesign.

Availability

SQP90142E_GE3 is available at Aetrix Electronics and suitable for automotive traction inverters, 48 V mild-hybrid DC-DC converters, and on-board chargers requiring stable component supply across extended production lifecycles.

Supply support for SQP90142E_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQP90142E_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-efficiency, high-temperature switching in electrified vehicle power systems.

FAQ

What is the maximum continuous drain current rating for SQP90142E_GE3 at 125 °C case temperature?

The SQP90142E_GE3 supports 45 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and ensures reliable operation in high-ambient under-hood environments. Designers must verify heatsink design meets R_thJA = 40 °C/W requirement for PCB-mounted operation.

Is SQP90142E_GE3 qualified to AEC-Q101, and what test conditions apply?

Yes, SQP90142E_GE3 is fully AEC-Q101 qualified per Rev G. Qualification includes temperature cycling, high-temperature reverse bias (HTRB), unbiased highly accelerated stress test (UHAST), and mechanical shock/vibration. The device undergoes 100 % R_g and unclamped inductive switching (UIS) screening per lot, confirming robustness for automotive safety-critical functions.

What is the typical gate threshold voltage range for SQP90142E_GE3, and how does it affect drive circuit design?

The SQP90142E_GE3 has a V_GS(th) range of 2.5 V to 3.5 V (typical 3.0 V) at I_D = 250 μA. This tight threshold enables reliable turn-on with standard 5 V logic-level gate drivers while maintaining noise immunity. For robust switching, gate drive should provide ≥10 V to achieve rated R_DS(on), and negative turn-off bias (≤ −5 V) is recommended to prevent spurious conduction during high dv/dt events.

Can SQP90142E_GE3 be used in synchronous rectification applications, and what body diode parameters support this?

Yes, SQP90142E_GE3 is suitable for synchronous rectification due to its characterized body diode: V_SD = 0.82 V (typical) at I_F = 20 A and t_rr = 129–260 ns. Its Q_rr of 685–1400 nC and low reverse recovery peak current (I_RM(REC) = −11 A) reduce switching losses and EMI compared to discrete Schottky solutions, especially in high-frequency DC-DC converters.

What is the safe operating area (SOA) limitation for SQP90142E_GE3 in linear mode operation?

The SQP90142E_GE3 SOA curve shows that linear-mode operation is limited by R_DS(on) at short durations (<1 ms) and by thermal constraints beyond 10 ms. At DC, maximum allowable V_DS is ~10 V at 78.5 A to stay within P_D = 250 W. For pulse operation, designers must consult the normalized transient thermal impedance curves and ensure single-pulse energy remains below E_AS = 205 mJ to avoid avalanche-induced failure.

SQP90142E_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 78.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 15.3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

SQP90142E_GE3 FAQ

1.How can I place an order for SQP90142E_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQP90142E_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQP90142E_GE3 reliable?

The price and inventory of SQP90142E_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQP90142E_GE3 is usually 5 days.

3.What payment methods are accepted for SQP90142E_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQP90142E_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQP90142E_GE3?

SQP90142E_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQP90142E_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQP90142E_GE3?

For technical support, including SQP90142E_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQP90142E_GE3 requirements.

6.How does Aetrix verify that SQP90142E_GE3 is sourced from the original manufacturer or authorized distributors?

All SQP90142E_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQP90142E_GE3 meets industry standards.

7.What is the process for return or replacement of SQP90142E_GE3?

All SQP90142E_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQP90142E_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQP90142E_GE3 part is unused and in its original packaging.

Return procedure for SQP90142E_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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