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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQR40N10-25_GE3

Name: SQR40N10-25_GE3
Brand: Vishay Siliconix
SKU: SQR40N10-25_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQR40N10-25_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-4, DPAK (3 Leads + Tab)

Datasheet:: SQR40N10-25_GE3.pdf

Description:: MOSFET N-CH 100V 40A TO252 REV

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Product details

Overview

SQR40N10-25_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 100 V drain-source voltage, 40 A continuous drain current at 25 °C, and 0.025 Ω R_DS(on) at V_GS = 10 V. It serves as a high-efficiency main switch in DC-DC converters and motor control stages within engine management and body electronics systems.

For engineers reviewing the SQR40N10-25_GE3 datasheet, SQR40N10-25_GE3 pinout, SQR40N10-25_GE3 application, or SQR40N10-25_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, TO-252 Reverse Lead (DPAK) package with drain-connected tab, and validated UIS robustness for automotive transients.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-reliability automotive power stages. Its gate threshold voltage range (1.5–2.5 V) enables compatibility with standard 3.3 V and 5 V logic-level drivers while maintaining noise immunity under harsh EMI conditions.

The device features fully characterized dynamic parameters including 46 nC total gate charge (typ.), 127 pF reverse transfer capacitance (typ.), and 1.1 °C/W junction-to-case thermal resistance - enabling accurate thermal modeling for PCB-mounted designs operating up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V nominal automotive battery architectures with margin for load dump transients
R_DS(on) @ 10 V	0.025 Ω - delivers ≤ 40 W conduction loss at 40 A, enabling compact thermal design in space-constrained modules
I_D (cont.)	40 A @ T_C = 25 °C - defines maximum steady-state current capability when mounted on heatsink or thermally enhanced PCB
T_J max	+175 °C - meets under-hood temperature requirements for engine control units and transmission control modules
AEC-Q101	Qualified - certified for automotive use per stress test requirements including HTGB, HTRB, and UIS
E_AS	80 mJ - withstands single-pulse inductive energy events without failure, critical for solenoid and motor drive protection
R_thJC	1.1 °C/W - enables direct thermal path from die to heatsink via drain-tab mounting, reducing junction temperature rise by >30 % vs. standard DPAK

Pinout & Package

Package: TO-252 Reverse Lead (DPAK), surface-mount, drain-connected metal tab for thermal and electrical connection to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires <2.5 V threshold and ≤ ±20 V absolute max rating; low 1.8 Ω typical gate resistance minimizes ringing
S	Source	Reference node for gate drive and current return path; tied to power ground plane in half-bridge configurations
D	Drain	Main power output terminal; electrically and thermally connected to exposed metal tab for low-inductance, high-current routing

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 0.025 Ω R_DS(on) at 100 V rating - achieves best-in-class conduction efficiency for DPAK-packaged automotive MOSFETs
100 % R_g and UIS tested	Each unit verified for gate resistance consistency and unclamped inductive switching survivability - eliminates field failures from transient overstress
Drain-connected tab	Provides <1.1 °C/W thermal path to PCB heatsink area - reduces junction temperature by up to 45 °C vs. non-tabbed alternatives at 40 A
AEC-Q101 qualified	Validated across temperature cycling, humidity, and high-temperature gate bias - ensures reliability in 15+ year automotive service life

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive HVAC Blower Motor Controller
Use Scenario: High-side switching of 12 V fuel injectors with peak currents up to 35 A and PWM frequencies up to 2 kHz. IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration; handles repetitive inductive turn-off spikes. Use Value: 80 mJ E_AS rating and 175 °C operation ensure reliable injector actuation across ambient temperatures from −40 °C to +125 °C under hood.	Use Scenario: PWM-controlled 24 V blower motor in cabin air handling units requiring continuous 30 A current and thermal stability. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or single-FET drive stage; manages back-EMF during deceleration. Use Value: 0.025 Ω R_DS(on) limits I²R losses to <25 W at full load, enabling operation without forced air cooling in sealed enclosures.
12 V/48 V Dual-Battery DC-DC Converter Primary Switch	Transmission Control Module Solenoid Driver
Use Scenario: Primary-side synchronous rectifier in bidirectional 12 V ↔ 48 V converter used in mild hybrid powertrains. IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) hard-switched power switch with low Q_g (46 nC typ.) for reduced gate drive loss. Use Value: 2703 pF C_iss and 127 pF Crss support efficient ZVS/ZCS implementation while maintaining EMI compliance in safety-critical subsystems.	Use Scenario: Proportional current control of electro-hydraulic pressure solenoids in 8-speed automatic transmissions. IC Role / Device Role / Timing Role: Precision current sink with fast turn-off (<9 ns fall time) to achieve <10 μs current decay for closed-loop pressure regulation. Use Value: 6 ns fall time and 27 ns turn-off delay enable sub-millisecond solenoid response, meeting ASAM MC-1 real-time control timing budgets.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive HVAC Blower Motor Controller

Use Scenario: High-side switching of 12 V fuel injectors with peak currents up to 35 A and PWM frequencies up to 2 kHz.

IC Role / Device Role / Timing Role: Main power switch in low-side or high-side configuration; handles repetitive inductive turn-off spikes.

Use Value: 80 mJ E_AS rating and 175 °C operation ensure reliable injector actuation across ambient temperatures from −40 °C to +125 °C under hood.

Use Scenario: PWM-controlled 24 V blower motor in cabin air handling units requiring continuous 30 A current and thermal stability.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge or single-FET drive stage; manages back-EMF during deceleration.

Use Value: 0.025 Ω R_DS(on) limits I²R losses to <25 W at full load, enabling operation without forced air cooling in sealed enclosures.

12 V/48 V Dual-Battery DC-DC Converter Primary Switch

Transmission Control Module Solenoid Driver

Use Scenario: Primary-side synchronous rectifier in bidirectional 12 V ↔ 48 V converter used in mild hybrid powertrains.

IC Role / Device Role / Timing Role: High-frequency (100–300 kHz) hard-switched power switch with low Q_g (46 nC typ.) for reduced gate drive loss.

Use Value: 2703 pF C_iss and 127 pF Crss support efficient ZVS/ZCS implementation while maintaining EMI compliance in safety-critical subsystems.

Use Scenario: Proportional current control of electro-hydraulic pressure solenoids in 8-speed automatic transmissions.

IC Role / Device Role / Timing Role: Precision current sink with fast turn-off (<9 ns fall time) to achieve <10 μs current decay for closed-loop pressure regulation.

Use Value: 6 ns fall time and 27 ns turn-off delay enable sub-millisecond solenoid response, meeting ASAM MC-1 real-time control timing budgets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(on) = 0.013 Ω @ 10 V (lower), but only rated to 150 °C TJ and not AEC-Q101 qualified	Suitable for industrial DC-DC where extended temperature is not required; lacks automotive qualification evidence	Select only if AEC-Q101 is not mandated and thermal margin allows lower R_DS(on) benefit
IRF3205PbF	Legacy planar MOSFET; R_DS(on) = 0.008 Ω @ 10 V but no AEC-Q101, no UIS testing, and 175 °C rating not validated	Acceptable for cost-sensitive aftermarket modules without OEM validation requirements	Not recommended for new automotive designs due to missing qualification and unverified SOA robustness

Compared with STL130N10F7 and IRF3205PbF, the SQR40N10-25_GE3 provides guaranteed AEC-Q101 compliance, 175 °C operation with documented SOA, and production-tested UIS - making it the only option qualified for safety-critical engine and transmission control functions.

Availability

SQR40N10-25_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, motor control, and solenoid actuation requiring stable component supply across multi-year vehicle production cycles.

Supply support for SQR40N10-25_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQR40N10-25_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for under-hood applications demanding AEC-Q101 qualification, 175 °C operation, and robust avalanche performance.

FAQ

What is the maximum continuous drain current rating for SQR40N10-25_GE3 at 125 °C case temperature?

The SQR40N10-25_GE3 supports 26 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 Reverse Lead package and must be applied in thermal simulations using the 1.1 °C/W R_thJC value. The SQR40N10-25_GE3 maintains safe operation up to 175 °C junction temperature, enabling use in high-ambient environments when properly heatsinked.

Is SQR40N10-25_GE3 suitable for high-frequency switching above 100 kHz?

Yes, the SQR40N10-25_GE3 supports high-frequency operation with 46 nC total gate charge (typ.) and 127 pF reverse transfer capacitance (typ.), enabling efficient switching up to 300 kHz in hard-switched topologies. Its 11 ns turn-on delay and 6 ns fall time allow precise PWM control in DC-DC converters and motor drives. The SQR40N10-25_GE3 datasheet confirms dynamic parameters under 50 V V_DS, 40 A I_D conditions relevant to automotive SMPS designs.

Does SQR40N10-25_GE3 have integrated ESD protection on the gate?

No, the SQR40N10-25_GE3 does not include integrated gate ESD protection diodes. Its gate oxide is rated for ±20 V absolute maximum V_GS, and gate leakage is specified at ±100 nA at ±20 V. External gate resistors (typically 10–47 Ω) and TVS clamping are recommended in automotive harness interfaces. The SQR40N10-25_GE3 relies on system-level protection rather than on-die structures, consistent with AEC-Q101-compliant discrete MOSFET practice.

What is the significance of "Reverse Lead" in the TO-252 package designation for SQR40N10-25_GE3?

"Reverse Lead" indicates that the leadframe pinout is rotated 180° relative to standard TO-252: G–S–D (top view) instead of G–D–S. This orientation places the drain tab adjacent to the source pad on the PCB, optimizing layout for low-inductance source return paths in high-current switching nodes. The SQR40N10-25_GE3 mechanical drawing (Doc #72206) confirms this pinout, and the land pattern (Doc #62165) is dimensioned accordingly - critical for avoiding assembly misalignment.

Can SQR40N10-25_GE3 replace older Vishay parts like SIHFU40N10 in automotive designs?

The SQR40N10-25_GE3 is not a direct drop-in replacement for SIHFU40N10 due to differences in package (TO-252 Reverse Lead vs. TO-220AB), thermal path (drain-tab vs. isolated case), and qualification (AEC-Q101 vs. industrial). While both share 100 V/40 A ratings, the SQR40N10-25_GE3 requires PCB redesign for the surface-mount footprint and leverages superior thermal resistance (1.1 °C/W vs. ~2.5 °C/W). The SQR40N10-25_GE3 offers higher reliability for new automotive platforms but cannot be substituted without layout and thermal validation.

SQR40N10-25_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-4, DPAK (3 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK) Reverse Lead

SQR40N10-25_GE3 FAQ

1.How can I place an order for SQR40N10-25_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQR40N10-25_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQR40N10-25_GE3 reliable?

The price and inventory of SQR40N10-25_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQR40N10-25_GE3 is usually 5 days.

3.What payment methods are accepted for SQR40N10-25_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQR40N10-25_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQR40N10-25_GE3?

SQR40N10-25_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQR40N10-25_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQR40N10-25_GE3?

For technical support, including SQR40N10-25_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQR40N10-25_GE3 requirements.

6.How does Aetrix verify that SQR40N10-25_GE3 is sourced from the original manufacturer or authorized distributors?

All SQR40N10-25_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQR40N10-25_GE3 meets industry standards.

7.What is the process for return or replacement of SQR40N10-25_GE3?

All SQR40N10-25_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQR40N10-25_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQR40N10-25_GE3 part is unused and in its original packaging.

Return procedure for SQR40N10-25_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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