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Vishay Siliconix SQR50N04-3M8_GE3
- Part No.:
- SQR50N04-3M8_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQR50N04-3M8_GE3.pdf
- Description:
- MOSFET N-CH 40V 50A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,853
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Product details
Overview
SQR50N04-3M8_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET in TO-252 Reverse Lead (DPAK) package, rated for 40 V VDS, 50 A continuous drain current at TC = 25 °C, and RDS(on) = 3.8 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood automotive power switching applications including motor control and DC-DC converters.
For engineers reviewing the SQR50N04-3M8_GE3 datasheet, SQR50N04-3M8_GE3 pinout, SQR50N04-3M8_GE3 application, or SQR50N04-3M8_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.1 °C/W), gate charge (Qg = 70–105 nC), avalanche energy rating (EAS = 192 mJ), and SOA curves critical for high-reliability 12 V/24 V automotive power design.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current, thermally constrained automotive environments. Its drain-connected tab enables direct PCB heatsinking, and the 100 % Rg and UIS testing ensures robustness against gate oscillation and unclamped inductive switching stress.
The device features a typical input capacitance (Ciss) of 5360–6700 pF and reverse transfer capacitance (Crss) of 250–310 pF at VDS = 25 V, supporting stable gate drive with moderate Miller effect. Its transconductance (gfs) of 120 S at VDS = 15 V, ID = 15 A confirms strong voltage-controlled current gain for precise PWM control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems with load-dump margin. |
| RDS(on) @ VGS = 10 V | 3.8 mΩ - Enables <1.9 W conduction loss at 50 A, reducing thermal burden in compact power stages. |
| ID Continuous | 50 A @ TC = 25 °C - Supports high-current motor drivers and solenoid controls without forced air cooling. |
| EAS | 192 mJ - Withstands single-pulse inductive energy from relay or motor turn-off without failure. |
| RthJC | 1.1 °C/W - Allows efficient heat transfer from die to heatsinked PCB copper, enabling >45 W dissipation at TC = 125 °C. |
| Qg | 70–105 nC - Determines gate driver power requirement and switching speed; supports ~50 kHz PWM with standard 1 A drivers. |
| TJ Range | −55 to +175 °C - Fully rated for engine compartment operation per AEC-Q101, eliminating derating at high ambient. |
Pinout & Package
Package: TO-252 Reverse Lead (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 2.5–3.5 V threshold and ≤20 V absolute max; low Rg (0.9–2.9 Ω) minimizes ringing. |
| D | Drain | High-side or low-side switch node; internally connected to exposed tab-must be routed to large copper area for thermal and current handling. |
| S | Source | Reference node for gate drive and current sensing; forms body diode anode; ties to ground or low-side return path. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HTRB, and UIS stress-no additional qualification needed for Tier 1 designs. |
| 100 % Rg tested | Ensures consistent gate resistance across production lots, critical for predictable rise/fall times and EMI control. |
| TrenchFET® architecture | Delivers lower RDS(on) × Qg figure-of-merit than planar MOSFETs, improving efficiency in hard-switched topologies. |
| Low RthJC (1.1 °C/W) | Enables higher power density by transferring heat directly from die to PCB, reducing need for external heatsinks. |
| 100 % UIS tested | Guarantees survival under worst-case inductive turn-off events-essential for solenoid, fuel injector, and motor phase switching. |
Applications
| Automotive Body Control Module (BCM) | Engine Cooling Fan Driver |
|---|---|
Use Scenario: Switching 12 V loads such as door locks, interior lighting, and window lift motors in centralized BCM units. IC Role / Device Role / Timing Role: Low-side power switch controlling load current with PWM dimming or timed actuation. Use Value: 3.8 mΩ RDS(on) limits resistive heating during sustained 20–30 A pulses, extending PCB life and meeting ISO 16750-2 surge requirements. |
Use Scenario: Driving brushed DC cooling fans in engine bays where ambient exceeds 105 °C. IC Role / Device Role / Timing Role: High-current, thermally robust low-side switch operating in PWM mode at 1–20 kHz. Use Value: +175 °C rated junction and 192 mJ EAS ensure reliable fan restart after stall conditions without thermal shutdown or avalanche failure. |
| 48 V Mild Hybrid DC-DC Converter | Fuel Injector Driver |
Use Scenario: Synchronous rectification in 12 V → 48 V bidirectional converters for mild hybrid architectures. IC Role / Device Role / Timing Role: Secondary-side synchronous FET with fast switching (tr = 5–8 ns, tf = 9–14 ns) and low Coss. Use Value: Coss = 500–627 pF and Qgd = 13 nC minimize switching losses and improve light-load efficiency over Schottky alternatives. |
Use Scenario: High-speed, high-current switching of gasoline/diesel fuel injectors requiring precise pulse-width control. IC Role / Device Role / Timing Role: Low-side driver with sub-50 ns total switching time (td(on) + tr + td(off) + tf) and 200 A pulsed capability. Use Value: 200 A IDM and 62 A IAS support injector peak currents while maintaining tight timing accuracy across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL120N4LF6AG | RDS(on) = 2.8 mΩ @ 10 V, but only rated to +175 °C with AEC-Q101 conditional qualification; TO-263 package has higher RthJC (1.5 °C/W). | Better conduction loss, but larger footprint and less proven under extended high-temp cycling. | Prefer when board space allows TO-263 and lowest possible RDS(on) dominates over thermal interface simplicity. |
| IRF7470PBF | Same TO-252 package, but RDS(on) = 4.5 mΩ, lower EAS (120 mJ), and not AEC-Q101 qualified; legacy planar process. | Limited to non-automotive industrial use; lacks UIS and high-temp validation. | Select only for cost-sensitive non-automotive applications where AEC-Q101 and 175 °C operation are unnecessary. |
Compared with STL120N4LF6AG and IRF7470PBF, the SQR50N04-3M8_GE3 uniquely balances AEC-Q101 compliance, 1.1 °C/W thermal resistance, and 192 mJ avalanche robustness in the compact TO-252 Reverse Lead footprint-making it optimal for space-constrained, thermally aggressive automotive modules.
Availability
SQR50N04-3M8_GE3 is available at Aetrix Electronics and suitable for automotive body control, engine cooling fan drivers, 48 V mild hybrid converters, and fuel injector circuits requiring stable component supply across long production lifecycles.
Supply support for SQR50N04-3M8_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQR50N04-3M8_GE3 belongs to Vishay's automotive-qualified TrenchFET® power MOSFET family, engineered specifically for high-current, high-temperature switching in engine bay and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for the SQR50N04-3M8_GE3 at 125 °C case temperature?
The SQR50N04-3M8_GE3 maintains a continuous drain current rating of 50 A even at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This reflects its robust thermal design and AEC-Q101 qualification-unlike many MOSFETs that derate significantly above 100 °C. The SQR50N04-3M8_GE3 achieves this via low RthJC (1.1 °C/W) and stable RDS(on) up to +175 °C junction temperature.
Is the SQR50N04-3M8_GE3 pin-compatible with standard TO-252 (DPAK) footprints?
No-the SQR50N04-3M8_GE3 uses the TO-252 Reverse Lead (3LR) variant, where lead positions are mirrored versus standard DPAK: Gate is leftmost, Drain center, Source rightmost (G-D-S), whereas standard DPAK is G-S-D. Using the standard land pattern will result in incorrect connections. The recommended land pattern is documented in Vishay's Document #62165 and must be followed to ensure correct routing and thermal performance of the SQR50N04-3M8_GE3.
Does the SQR50N04-3M8_GE3 include integrated protection features like overtemperature shutdown?
No-the SQR50N04-3M8_GE3 is a discrete power MOSFET without integrated protection circuitry. It relies on external system-level safeguards such as current-sense amplifiers, microcontroller-based fault detection, and thermal monitoring. However, it is 100 % UIS tested and AEC-Q101 qualified, meaning its intrinsic ruggedness-including 192 mJ single-pulse avalanche energy and guaranteed Rg-provides foundational hardware-level robustness for external protection schemes in automotive designs using the SQR50N04-3M8_GE3.
What is the typical gate threshold voltage range for the SQR50N04-3M8_GE3, and how does it affect drive requirements?
The SQR50N04-3M8_GE3 has a gate threshold voltage (VGS(th)) range of 2.5 V to 3.5 V at ID = 250 μA, with a typical value of 3.0 V. This low threshold enables reliable turn-on with 3.3 V or 5 V logic-level gate drivers, but full enhancement (to achieve rated RDS(on)) requires VGS ≥ 10 V. Therefore, the SQR50N04-3M8_GE3 should be driven with a dedicated gate driver capable of delivering ≥10 V swing and ≥1 A peak current to minimize switching losses and ensure robust noise immunity in automotive environments.
Can the SQR50N04-3M8_GE3 be used in synchronous rectification applications?
Yes-the SQR50N04-3M8_GE3 is well-suited for synchronous rectification in DC-DC converters due to its low RDS(on) (3.8 mΩ), fast switching parameters (tr = 5–8 ns, tf = 9–14 ns), and low output capacitance (Coss = 500–627 pF). Its 40 V rating aligns with 12 V and 48 V bus architectures, and its AEC-Q101 qualification supports use in automotive power supplies. When implemented with proper gate timing control, the SQR50N04-3M8_GE3 reduces conduction losses versus Schottky diodes and improves overall converter efficiency-especially at high current and elevated temperature.
SQR50N04-3M8_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
SQR50N04-3M8_GE3 FAQ
1.How can I place an order for SQR50N04-3M8_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQR50N04-3M8_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQR50N04-3M8_GE3 reliable?
The price and inventory of SQR50N04-3M8_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQR50N04-3M8_GE3 is usually 5 days.
3.What payment methods are accepted for SQR50N04-3M8_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQR50N04-3M8_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQR50N04-3M8_GE3?
SQR50N04-3M8_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQR50N04-3M8_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQR50N04-3M8_GE3?
For technical support, including SQR50N04-3M8_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQR50N04-3M8_GE3 requirements.
6.How does Aetrix verify that SQR50N04-3M8_GE3 is sourced from the original manufacturer or authorized distributors?
All SQR50N04-3M8_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQR50N04-3M8_GE3 meets industry standards.
7.What is the process for return or replacement of SQR50N04-3M8_GE3?
All SQR50N04-3M8_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQR50N04-3M8_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQR50N04-3M8_GE3 part is unused and in its original packaging.
Return procedure for SQR50N04-3M8_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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