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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQR70090ELR_GE3

Name: SQR70090ELR_GE3
Brand: Vishay Siliconix
SKU: SQR70090ELR_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQR70090ELR_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQR70090ELR_GE3.pdf

Description:: MOSFET N-CH 100V 86A DPAK

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Product details

Overview

SQR70090ELR_GE3 from Vishay Siliconix is an automotive-grade N-channel 100 V MOSFET in TO-252 Reverse Lead (DPAK) package, delivering R_DS(on) = 8.7 mΩ at V_GS = 10 V and 10.6 mΩ at V_GS = 4.5 V, with continuous drain current up to 86 A at T_C = 25 °C. It serves as a high-efficiency power switch in 48 V mild-hybrid DC/DC converters and motor control stages requiring AEC-Q101 qualification and 175 °C junction operation.

For engineers reviewing the SQR70090ELR_GE3 datasheet, SQR70090ELR_GE3 pinout, SQR70090ELR_GE3 application, or SQR70090ELR_GE3 equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, 1.1 °C/W junction-to-case thermal resistance, and unplated drain tab optimized for direct heatsink mounting in space-constrained automotive power modules.

Technical Context

This TrenchFET® MOSFET uses silicon process optimization for reduced conduction and switching losses in high-current automotive power stages. Its gate charge profile (Q_g = 42–65 nC, Q_gd = 8 nC) supports efficient PWM operation at frequencies up to 100 kHz in synchronous buck converters.

The device features 100 % R_g and UIS tested reliability, with avalanche energy rating E_AS = 101 mJ and single-pulse avalanche current I_AS = 45 A - enabling robust operation under inductive load switching transients common in solenoid drivers and EPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V system designs with ≥2× voltage margin against load-dump transients.
R_DS(on) @ V_GS = 10 V	8.7 mΩ - enables <1.5 W conduction loss at 40 A continuous current in thermally optimized layouts.
R_DS(on) @ V_GS = 4.5 V	10.6 mΩ - ensures reliable turn-on with standard 3.3 V/5 V microcontroller GPIO or gate driver ICs.
I_D (continuous)	86 A @ T_C = 25 °C - suitable for high-current phases in 1–3 kW traction inverters or battery disconnect switches.
Junction Temp Range	−55 °C to +175 °C - qualified for under-hood environments including engine bay and transmission control units.
R_thJC	1.1 °C/W - allows >100 W power dissipation with minimal temperature rise when mounted to aluminum heatsink.
AEC-Q101	Qualified - meets stress test requirements for automotive electronics per JESD22-A108 and JESD22-A110.

Pinout & Package

TO-252 Reverse Lead DPAK package with unplated drain tab (≥80 % area), 1.78 mm max height, and surface-mount land pattern per Vishay Doc. #62165. Drain connected directly to tab for low-inductance, high-current path and thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives gate drive signal; requires ≤2.9 Ω gate resistance to limit ringing and ensure controlled dV/dt during switching.
S (Source)	Power return / reference node	Common source connection for current sensing and gate driver return; must be low-impedance to minimize noise coupling.
D (Drain)	Main power output	Internally bonded to unplated metal tab; serves as primary thermal and current path to PCB copper or external heatsink.

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) and higher cell density vs. planar MOSFETs, reducing die size and package inductance.
Unplated drain tab	Eliminates solder wetting variability and improves thermal interface reliability when bolted to heatsinks or cold plates.
100 % R_g and UIS tested	Guarantees gate resistance consistency and ruggedness against unclamped inductive switching events in motor drives.
Low C_iss/C_oss ratio	C_iss = 2550–3500 pF, C_oss = 1350–1900 pF - supports ZVS operation and reduces capacitive switching loss in resonant topologies.
175 °C rated junction	Allows full-rated current operation in high-ambient environments (e.g., near exhaust manifolds or inverters) without derating.

Applications

48 V Mild-Hybrid DC/DC Converter	Electric Power Steering (EPS) Motor Driver
Use Scenario: High-efficiency bidirectional buck-boost conversion between 12 V and 48 V rails in start-stop and regenerative braking systems. IC Role / Device Role / Timing Role: Primary high-side and low-side synchronous rectifier switch in interleaved phase legs. Use Value: Low R_DS(on) at 4.5 V enables direct drive from 5 V gate drivers, minimizing BOM count while sustaining >95 % efficiency at 3 kW peak power.	Use Scenario: Three-phase inverter driving brushless DC motor in column-assist or rack-assist EPS modules. IC Role / Device Role / Timing Role: Phase-leg power switch handling 60–80 A peak currents with fast switching (<60 ns fall time) to reduce torque ripple. Use Value: 1.1 °C/W R_thJC and 175 °C rating allow sustained 70 A operation without forced air cooling, reducing module size and cost.
On-Board Charger (OBC) Input Stage	12 V Battery Disconnect Switch
Use Scenario: AC/DC PFC front-end switching in dual-voltage OBCs supporting both 12 V auxiliary and 48 V traction charging. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage operating at 65–100 kHz. Use Value: Low Q_gd/Q_g ratio (≈0.19) minimizes Miller-induced shoot-through risk and improves light-load efficiency.	Use Scenario: High-reliability main battery isolation switch activated during crash detection or service mode. IC Role / Device Role / Timing Role: Single-pole, normally-open power switch with fail-safe open-circuit behavior on gate fault. Use Value: AEC-Q101 qualification and 101 mJ E_AS ensure safe interruption of >500 A short-circuit currents without catastrophic failure.

48 V Mild-Hybrid DC/DC Converter

Electric Power Steering (EPS) Motor Driver

Use Scenario: High-efficiency bidirectional buck-boost conversion between 12 V and 48 V rails in start-stop and regenerative braking systems.

IC Role / Device Role / Timing Role: Primary high-side and low-side synchronous rectifier switch in interleaved phase legs.

Use Value: Low R_DS(on) at 4.5 V enables direct drive from 5 V gate drivers, minimizing BOM count while sustaining >95 % efficiency at 3 kW peak power.

Use Scenario: Three-phase inverter driving brushless DC motor in column-assist or rack-assist EPS modules.

IC Role / Device Role / Timing Role: Phase-leg power switch handling 60–80 A peak currents with fast switching (<60 ns fall time) to reduce torque ripple.

Use Value: 1.1 °C/W R_thJC and 175 °C rating allow sustained 70 A operation without forced air cooling, reducing module size and cost.

On-Board Charger (OBC) Input Stage

12 V Battery Disconnect Switch

Use Scenario: AC/DC PFC front-end switching in dual-voltage OBCs supporting both 12 V auxiliary and 48 V traction charging.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC stage operating at 65–100 kHz.

Use Value: Low Q_gd/Q_g ratio (≈0.19) minimizes Miller-induced shoot-through risk and improves light-load efficiency.

Use Scenario: High-reliability main battery isolation switch activated during crash detection or service mode.

IC Role / Device Role / Timing Role: Single-pole, normally-open power switch with fail-safe open-circuit behavior on gate fault.

Use Value: AEC-Q101 qualification and 101 mJ E_AS ensure safe interruption of >500 A short-circuit currents without catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7AG	R_DS(on) = 9.5 mΩ @ 10 V; TO-263 package; 100 % UIS tested but not AEC-Q101 certified.	Lacks automotive qualification; suitable for industrial UPS or solar inverters where AEC compliance is not required.	Select only for non-automotive applications needing identical voltage/current specs but no qualification mandate.
IXTH120N10L2	R_DS(on) = 7.2 mΩ @ 10 V; TO-247 package; higher R_thJC = 0.55 °C/W but larger footprint and higher cost.	Better thermal performance but incompatible PCB layout; requires redesign for heatsink mounting and gate drive loop area.	Choose only when >100 W continuous dissipation is needed and board space allows TO-247 mechanical integration.

Compared with STL220N10F7AG and IXTH120N10L2, the SQR70090ELR_GE3 uniquely balances AEC-Q101 compliance, TO-252 reverse-lead thermal efficiency, and 4.5 V logic-level drive - making it optimal for volume automotive power modules where qualification, size, and gate drive simplicity are jointly critical.

Availability

SQR70090ELR_GE3 is available at Aetrix Electronics and suitable for 48 V mild-hybrid systems, electric power steering modules, and on-board chargers requiring stable component supply across multi-year automotive production cycles.

Supply support for SQR70090ELR_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQR70090ELR_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in next-generation 48 V vehicle architectures.

FAQ

What is the maximum continuous drain current rating for SQR70090ELR_GE3 at 125 °C case temperature?

The SQR70090ELR_GE3 supports 50 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 Reverse Lead package and ensures reliable operation in high-ambient under-hood locations where the SQR70090ELR_GE3 is commonly deployed.

Does SQR70090ELR_GE3 have an integrated body diode, and what is its forward voltage?

Yes, the SQR70090ELR_GE3 includes a parasitic body diode with V_SD = 0.88–1.5 V at I_F = 25 A and V_GS = 0 V. This diode supports freewheeling current in inductive loads such as motor windings and solenoids, and its low forward voltage contributes to reduced conduction loss in synchronous rectification applications using the SQR70090ELR_GE3.

Is SQR70090ELR_GE3 compatible with standard TO-252 footprint layouts?

No - the SQR70090ELR_GE3 uses a TO-252 Reverse Lead (DPAK 3LR) configuration where pin order is G-S-D on top view and S-G-D on bottom view, differing from standard TO-252. Correct PCB layout must follow Vishay Doc. #62165 land pattern to avoid misalignment of gate, source, and drain connections during assembly of the SQR70090ELR_GE3.

What is the gate threshold voltage range for SQR70090ELR_GE3, and how does it affect drive requirements?

The SQR70090ELR_GE3 has a gate threshold voltage V_GS(th) of 1.5–2.5 V at I_D = 250 μA. This low threshold enables turn-on with logic-level signals, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). Designers must ensure gate drive circuits deliver sufficient voltage and current to fully saturate the SQR70090ELR_GE3 and avoid linear-mode heating.

How is thermal performance of SQR70090ELR_GE3 validated, and what is its junction-to-case resistance?

The SQR70090ELR_GE3 is characterized with R_thJC = 1.1 °C/W, measured from junction to the drain tab under standardized conditions. This value is validated per JEDEC JESD51-14 and confirmed by Vishay's 100 % UIS and thermal transient testing, ensuring the SQR70090ELR_GE3 delivers predictable thermal behavior when mounted to heatsinks or copper planes in production automotive modules.

SQR70090ELR_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 86A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

SQR70090ELR_GE3 FAQ

1.How can I place an order for SQR70090ELR_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQR70090ELR_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQR70090ELR_GE3 reliable?

The price and inventory of SQR70090ELR_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQR70090ELR_GE3 is usually 5 days.

3.What payment methods are accepted for SQR70090ELR_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQR70090ELR_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQR70090ELR_GE3?

SQR70090ELR_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQR70090ELR_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQR70090ELR_GE3?

For technical support, including SQR70090ELR_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQR70090ELR_GE3 requirements.

6.How does Aetrix verify that SQR70090ELR_GE3 is sourced from the original manufacturer or authorized distributors?

All SQR70090ELR_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQR70090ELR_GE3 meets industry standards.

7.What is the process for return or replacement of SQR70090ELR_GE3?

All SQR70090ELR_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQR70090ELR_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQR70090ELR_GE3 part is unused and in its original packaging.

Return procedure for SQR70090ELR_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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