Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQR97N06-6M3L_GE3

Name: SQR97N06-6M3L_GE3
Brand: Vishay Siliconix
SKU: SQR97N06-6M3L_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQR97N06-6M3L_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SQR97N06-6M3L_GE3.pdf

Description:: MOSFET N-CH 60V 50A TO252

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:1,992

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQR97N06-6M3L_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 97 A continuous drain current at 25 °C, and R_DS(on) of 6.3 mΩ at V_GS = 10 V. It operates up to 175 °C junction temperature and features low thermal resistance (R_thJC = 1.1 °C/W), AEC-Q101 qualification, and 100 % R_g and UIS testing - deployed in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQR97N06-6M3L_GE3 datasheet, SQR97N06-6M3L_GE3 pinout, SQR97N06-6M3L_GE3 application, or SQR97N06-6M3L_GE3 equivalent, key selection criteria include its TO-252 package thermal performance, 4.5 V gate drive capability (R_DS(on) = 6.9 mΩ), avalanche energy rating (E_AS = 101 mJ), and compliance with automotive reliability standards.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in high-efficiency power conversion. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables robust turn-on with standard 5 V or 3.3 V logic-level drivers, while the low Q_g (82–125 nC) and Q_gd (13.5 nC) support high-frequency operation up to 500 kHz in synchronous buck topologies.

The device integrates a robust body diode with V_SD = 0.9–1.5 V at 50 A and I_SM = 290 A pulsed source current, supporting bidirectional energy recovery in regenerative braking circuits. Thermal design is anchored by its 1.1 °C/W junction-to-case resistance and validated safe operating area (SOA) up to 10 ms at 60 V/50 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V automotive battery systems and 24 V industrial rails.
R_DS(on) @ V_GS = 10 V	6.3 mΩ - Enables <1 W conduction loss at 40 A, critical for thermally constrained under-hood modules.
R_DS(on) @ V_GS = 4.5 V	6.9 mΩ - Ensures full enhancement with 5 V microcontroller GPIOs without level-shifting circuitry.
I_D (continuous, T_C = 25 °C)	97 A - Supports high-power loads such as electric power steering (EPS) actuators and HVAC blowers.
E_AS	101 mJ - Withstands repetitive inductive switching surges in solenoid drivers and motor phase legs without failure.
T_J max	+175 °C - Qualified for under-hood environments including transmission control units and engine ECUs.
R_thJC	1.1 °C/W - Allows direct heatsinking via PCB copper pour or clip-mounting, reducing thermal interface layers.

Pinout & Package

Package: TO-252AA (DPAK), surface-mount, drain-connected tab for thermal and electrical connection to PCB ground plane. Dimensions per Vishay document 64424: D = 6.0–6.2 mm, E = 6.4–6.7 mm, H = 9.4–10.4 mm, tab length L5 = 1.0–1.5 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from load to ground	Electrically and thermally connected to exposed copper pad; must be soldered to ≥1"² 2 oz. FR-4 ground plane per Vishay AN826.
Source	Return path for load current; reference for gate drive	Low-inductance connection essential for stable switching; ties to power ground near driver IC.
Gate	Control terminal for channel conduction	High-impedance input requiring <2 Ω series resistance to damp ringing; sensitive to ESD (±20 V rating).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, transmission, and ADAS subsystems per stress test requirements.
100 % R_g tested	Ensures consistent gate resistance (1–3 Ω) across production lots, enabling predictable rise/fall times and EMI control.
100 % UIS tested	Each unit passes unclamped inductive switching stress, guaranteeing ruggedness in motor commutation and relay driving.
TrenchFET® architecture	Delivers lower R_DS(on) × Q_g figure-of-merit than planar MOSFETs, improving efficiency in high-frequency SMPS.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly.

Applications

Engine Control Unit (ECU)	Electric Power Steering (EPS)
Use Scenario: High-side switching of fuel injector solenoids in gasoline direct injection systems. IC Role / Device Role / Timing Role: Power switch controlling precise 1–2 ms pulse-width modulated current bursts into 12 Ω injectors. Use Value: Low R_DS(on) minimizes voltage drop during peak 10 A pulses, ensuring full solenoid actuation even at cold cranking (6 V battery).	Use Scenario: Low-side drive of three-phase BLDC motor windings in column-assist EPS modules. IC Role / Device Role / Timing Role: Synchronous rectifier in inverter leg handling 60 A RMS phase current at 20 kHz PWM. Use Value: 175 °C rating and 101 mJ E_AS withstand repeated short-circuit events during torque transients without latch-up.
48 V Mild Hybrid DC-DC Converter	Commercial Vehicle HVAC Blower
Use Scenario: Primary switch in 3 kW bidirectional buck-boost converter interfacing 12 V starter battery and 48 V Li-ion storage. IC Role / Device Role / Timing Role: High-frequency (300 kHz) hard-switched MOSFET in interleaved phase-leg topology. Use Value: Low C_iss (4844–6060 pF) and Q_gd (13.5 nC) reduce switching losses and gate drive power, enabling >97 % peak efficiency.	Use Scenario: PWM-controlled blower motor driver in Class 8 truck cab climate systems. IC Role / Device Role / Timing Role: High-current (85 A peak) low-side switch regulating airflow via 24 V supply. Use Value: TO-252 package with drain-tab thermal path sustains 56 A continuous current at 125 °C case temperature without derating.

Engine Control Unit (ECU)

Electric Power Steering (EPS)

Use Scenario: High-side switching of fuel injector solenoids in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Power switch controlling precise 1–2 ms pulse-width modulated current bursts into 12 Ω injectors.

Use Value: Low R_DS(on) minimizes voltage drop during peak 10 A pulses, ensuring full solenoid actuation even at cold cranking (6 V battery).

Use Scenario: Low-side drive of three-phase BLDC motor windings in column-assist EPS modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in inverter leg handling 60 A RMS phase current at 20 kHz PWM.

Use Value: 175 °C rating and 101 mJ E_AS withstand repeated short-circuit events during torque transients without latch-up.

48 V Mild Hybrid DC-DC Converter

Commercial Vehicle HVAC Blower

Use Scenario: Primary switch in 3 kW bidirectional buck-boost converter interfacing 12 V starter battery and 48 V Li-ion storage.

IC Role / Device Role / Timing Role: High-frequency (300 kHz) hard-switched MOSFET in interleaved phase-leg topology.

Use Value: Low C_iss (4844–6060 pF) and Q_gd (13.5 nC) reduce switching losses and gate drive power, enabling >97 % peak efficiency.

Use Scenario: PWM-controlled blower motor driver in Class 8 truck cab climate systems.

IC Role / Device Role / Timing Role: High-current (85 A peak) low-side switch regulating airflow via 24 V supply.

Use Value: TO-252 package with drain-tab thermal path sustains 56 A continuous current at 125 °C case temperature without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	R_DS(on) = 2.2 mΩ @ 10 V (lower), but only rated to 150 °C TJ and not AEC-Q101 qualified.	Suitable for industrial SMPS where automotive qualification is unnecessary; requires additional thermal margin for under-hood use.	Select when ultra-low R_DS(on) outweighs automotive certification needs and ambient temperature stays ≤125 °C.
IRF1405ZLPBF	R_DS(on) = 5.3 mΩ @ 10 V (lower), TO-220 package (higher R_thJA = 62 °C/W), no AEC-Q101 or UIS testing.	Better for cost-sensitive non-automotive motor drives; lacks thermal performance and ruggedness for safety-critical systems.	Choose for legacy designs using through-hole assembly or where PCB space allows larger heatsink footprint.

Compared with STL220N6LF8AG and IRF1405ZLPBF, the SQR97N06-6M3L_GE3 trades marginal R_DS(on) increase for guaranteed automotive reliability, superior thermal dissipation in surface-mount layout, and built-in surge immunity - making it the default choice for new ECU, EPS, and 48 V hybrid powertrain designs.

Availability

SQR97N06-6M3L_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across multi-year automotive production cycles.

Supply support for SQR97N06-6M3L_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQR97N06-6M3L_GE3 belongs to Vishay's TrenchFET® Gen IV automotive power MOSFET family, engineered specifically for high-current, high-temperature switching in safety-critical vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQR97N06-6M3L_GE3 at 125 °C case temperature?

The SQR97N06-6M3L_GE3 supports 56 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures reliable operation in high-ambient under-hood environments without exceeding the +175 °C maximum junction temperature.

Is SQR97N06-6M3L_GE3 suitable for 4.5 V gate drive applications?

Yes, the SQR97N06-6M3L_GE3 is fully characterized at V_GS = 4.5 V, delivering R_DS(on) = 6.9 mΩ at I_D = 20 A. Its gate threshold voltage range (1.5–2.5 V) ensures strong enhancement with 5 V logic outputs, eliminating need for gate drivers in many automotive microcontroller interfaces.

Does SQR97N06-6M3L_GE3 have avalanche capability, and how is it verified?

Yes, the SQR97N06-6M3L_GE3 is rated for single-pulse avalanche energy E_AS = 101 mJ and current I_AS = 45 A (L = 0.1 mH). Each unit undergoes 100 % unclamped inductive switching (UIS) testing per production lot, validating ruggedness against inductive load turn-off transients in motor and solenoid applications.

What is the thermal resistance from junction to case (R_thJC) for SQR97N06-6M3L_GE3?

The junction-to-case thermal resistance R_thJC of the SQR97N06-6M3L_GE3 is 1.1 °C/W, measured from die junction to the drain tab. This low value enables efficient heat transfer to external heatsinks or PCB copper planes, supporting high-power density designs in space-constrained automotive modules.

Is SQR97N06-6M3L_GE3 compliant with automotive qualification standards?

Yes, the SQR97N06-6M3L_GE3 is AEC-Q101 qualified, meeting stress test requirements for temperature cycling, humidity bias, high-temperature operating life, and ESD. Documentation is available in Vishay's qualification report referenced in datasheet S13-2237-Rev. A.

SQR97N06-6M3L_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6060 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

SQR97N06-6M3L_GE3 FAQ

1.How can I place an order for SQR97N06-6M3L_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQR97N06-6M3L_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQR97N06-6M3L_GE3 reliable?

The price and inventory of SQR97N06-6M3L_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQR97N06-6M3L_GE3 is usually 5 days.

3.What payment methods are accepted for SQR97N06-6M3L_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQR97N06-6M3L_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQR97N06-6M3L_GE3?

SQR97N06-6M3L_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQR97N06-6M3L_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQR97N06-6M3L_GE3?

For technical support, including SQR97N06-6M3L_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQR97N06-6M3L_GE3 requirements.

6.How does Aetrix verify that SQR97N06-6M3L_GE3 is sourced from the original manufacturer or authorized distributors?

All SQR97N06-6M3L_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQR97N06-6M3L_GE3 meets industry standards.

7.What is the process for return or replacement of SQR97N06-6M3L_GE3?

All SQR97N06-6M3L_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQR97N06-6M3L_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQR97N06-6M3L_GE3 part is unused and in its original packaging.

Return procedure for SQR97N06-6M3L_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …