My Inquiry
My Account
Vishay Siliconix SQRS140ELP-T1_GE3
- Part No.:
- SQRS140ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQRS140ELP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,118
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQRS140ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 40 V (D–S), with RDS(on) = 0.0006 Ω at VGS = 10 V and 0.00087 Ω at VGS = 4.5 V, delivering 504 A continuous drain current at TC = 25 °C, and qualified to AEC-Q101 for under-hood motor control and DC–DC converter applications.
For engineers reviewing the SQRS140ELP-T1_GE3 datasheet, SQRS140ELP-T1_GE3 pinout, SQRS140ELP-T1_GE3 application, or SQRS140ELP-T1_GE3 equivalent, this page provides verified thermal resistance values (RthJC = 0.56 °C/W), gate charge metrics (Qg = 196–294 nC), body diode recovery characteristics (trr = 78–156 ns), and PowerPAK® SO-8SW package layout guidance per PKSO8SWSCL land pattern.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in high-current automotive power stages. Its 175 °C maximum junction temperature and 100 % Rg/UIS tested construction support robust operation in engine control units and battery disconnect modules.
The device features a single N-channel configuration with integrated source-drain diode, characterized by VSD = 1.1 V at IF = 15 A and Qrr = 122–224 nC - enabling predictable reverse recovery behavior in synchronous rectification and H-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 12 V/24 V automotive systems and 48 V mild-hybrid architectures. |
| RDS(on) @ VGS = 10 V | 0.0006 Ω - Enables <1.5 W conduction loss at 50 A, critical for high-efficiency motor drivers and starter solenoid switches. |
| ID (continuous) @ TC = 25 °C | 504 A - Supports high-current load switching without external paralleling in battery management and traction inverters. |
| RthJC | 0.56 °C/W - Confirmed junction-to-case thermal resistance allows direct heatsink mounting for >200 W steady-state power dissipation. |
| Qg | 196–294 nC - Total gate charge range determines driver strength requirements; enables <120 ns turn-off delay with 1 Ω gate resistor. |
| trr | 78–156 ns - Body diode reverse recovery time validated at IF = 40 A/di/dt = 100 A/μs, essential for snubberless flyback and buck-boost designs. |
| AEC-Q101 qualified | Qualified per stress test standard for automotive electronics - required for ECU, ADAS, and powertrain modules. |
Pinout & Package
Package: PowerPAK® SO-8SW - thermally enhanced surface-mount package with exposed drain paddle on bottom side; 6.00 mm × 5.00 mm footprint; FR4 PCB mount recommended per 1" square board (2 oz copper).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, S | Source | Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 4, G | Gate | Single gate input with Rg = 0.6–1.8 Ω - supports direct drive from standard 3.3 V/5 V logic-level controllers. |
| 5, 6, 7, 8, D | Drain | Four drain terminals connected to exposed copper paddle - primary thermal path to PCB heatsink or metal core. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers lowest RDS(on) × Qg figure-of-merit in its voltage class - reduces both conduction and switching losses simultaneously. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical shock - eliminates need for additional qualification testing. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in inductive loads. |
| PowerPAK® SO-8SW package | Thermal resistance RthJA = 42 °C/W on standard PCB - outperforms SO-8 by >3× in power density for space-constrained ECUs. |
| Body diode with low Qrr | Qrr = 122–224 nC and ta/tb = 36/42 ns - minimizes voltage overshoot and EMI during freewheeling in half-bridge configurations. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | 48 V Mild-Hybrid DC–DC Converter |
|---|---|
|
Use Scenario: High-speed, high-current switching of fuel injectors in gasoline direct injection systems requiring precise pulse-width control up to 1 kHz. IC Role / Device Role / Timing Role: Primary power switch controlling injector coil current; operates in saturated on-state with minimal VDS drop. Use Value: RDS(on) = 0.0006 Ω limits on-state power loss to <0.15 W at 175 A peak, enabling compact thermal design within sealed ECU housing. |
Use Scenario: Synchronous rectification in bidirectional 48 V–12 V DC–DC converters for start-stop and regenerative braking energy transfer. IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery to minimize dead-time losses and reverse recovery spikes. Use Value: trr = 78–156 ns and Qrr = 122–224 nC allow stable operation at 200–300 kHz switching frequency without snubbers. |
| Electric Power Steering (EPS) Motor Phase Switch | Battery Disconnect Switch (BMS) |
|
Use Scenario: Three-phase inverter leg switching for brushless DC motors in EPS systems operating continuously at ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: High-current phase-leg switch handling 300+ A peak currents with tight thermal coupling to aluminum heatsink. Use Value: RthJC = 0.56 °C/W enables junction temperature rise of only ~32 °C above case at 250 A, supporting 175 °C max TJ rating. |
Use Scenario: Main contactor replacement in 12 V/48 V battery management systems requiring fail-safe isolation during fault conditions. IC Role / Device Role / Timing Role: Solid-state main disconnect switch with avalanche energy rating EAS = 234 mJ for overvoltage transient clamping. Use Value: Single-pulse avalanche current IAS = 68 A and EAS = 234 mJ provide proven ruggedness against load dump and inductive kick events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 0.0032 Ω @ 10 V; TO-220 package; RthJC = 1.25 °C/W; not AEC-Q101 qualified | Limited to non-automotive industrial motor drives due to packaging and qualification gap | Select when cost sensitivity outweighs thermal performance and automotive compliance requirements |
| STL220N4F7AG | RDS(on) = 0.00047 Ω @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; Qg = 160 nC | Better conduction loss but lower avalanche energy (EAS = 120 mJ vs. 234 mJ) | Prefer for ultra-high-efficiency 48 V converters where avalanche stress is mitigated by system-level protection |
Compared with IRL1404ZPBF and STL220N4F7AG, the SQRS140ELP-T1_GE3 offers superior avalanche ruggedness (234 mJ) and thermal efficiency (RthJC = 0.56 °C/W) in an AEC-Q101-compliant PowerPAK® SO-8SW package - making it optimal for safety-critical automotive power stages where reliability under transient overload is mandatory.
Availability
SQRS140ELP-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild-hybrid DC–DC converters requiring stable component supply across extended automotive production lifecycles.
Supply support for SQRS140ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQRS140ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-current, high-temperature power switching in engine, chassis, and electrification subsystems.
FAQ
What is the maximum continuous drain current rating for SQRS140ELP-T1_GE3 at 125 °C case temperature?
The SQRS140ELP-T1_GE3 supports 291 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8SW package and must be validated against actual board-level thermal performance using RthJC = 0.56 °C/W and system-level heatsinking.
Is SQRS140ELP-T1_GE3 suitable for synchronous rectification in a 400 kHz DC–DC converter?
Yes, the SQRS140ELP-T1_GE3 is suitable for synchronous rectification at 400 kHz due to its low Qg (196–294 nC), fast switching times (td(off) = 78–117 ns), and characterized body diode recovery (trr = 78–156 ns). However, layout must minimize gate loop inductance and ensure adequate gate drive strength to maintain timing integrity at that frequency.
Does SQRS140ELP-T1_GE3 have a guaranteed solder fillet at the exposed copper tip of the drain paddle?
No, the SQRS140ELP-T1_GE3 manufacturing process leaves the end of the drain paddle as exposed copper (not plated), and a solder fillet at that tip cannot be guaranteed. Per Vishay documentation (note c), adequate bottom-side solder interconnection is ensured without requiring a visible fillet - validated through IPC-A-610 Class 3 inspection criteria.
What is the gate-source leakage current specification for SQRS140ELP-T1_GE3?
The gate-source leakage current (IGSS) for SQRS140ELP-T1_GE3 is ±100 nA maximum at VGS = ±20 V and TC = 25 °C, as stated in the Static Characteristics table. This low leakage supports stable gate biasing in high-impedance drive circuits and reduces standby power consumption in always-on automotive modules.
How does the RDS(on) of SQRS140ELP-T1_GE3 change with junction temperature?
The RDS(on) of SQRS140ELP-T1_GE3 increases with junction temperature: at VGS = 10 V and ID = 15 A, it rises from 0.00048 Ω (typ.) at 25 °C to 0.0011 Ω (max.) at 175 °C. This positive temperature coefficient is confirmed in the "On-Resistance vs. Junction Temperature" graph on page 4 of the datasheet and supports inherent current sharing in paralleled configurations.
SQRS140ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® GenIV
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 504A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 294 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 15398 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 266W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8SW
SQRS140ELP-T1_GE3 FAQ
1.How can I place an order for SQRS140ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQRS140ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQRS140ELP-T1_GE3 reliable?
The price and inventory of SQRS140ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQRS140ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQRS140ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQRS140ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQRS140ELP-T1_GE3?
SQRS140ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQRS140ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQRS140ELP-T1_GE3?
For technical support, including SQRS140ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQRS140ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQRS140ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQRS140ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQRS140ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQRS140ELP-T1_GE3?
All SQRS140ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQRS140ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQRS140ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQRS140ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQRS140ELP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
