My Inquiry
My Account
Vishay Siliconix SQRS152ELP-T1_GE3
- Part No.:
- SQRS152ELP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SQRS152ELP-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:2,642
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQRS152ELP-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 40 V (D–S), with RDS(on) = 5.0 mΩ at VGS = 10 V and 7.5 mΩ at VGS = 4.5 V, delivering 58 A continuous drain current at TC = 25 °C. It operates up to +175 °C junction temperature and features wettable flank terminals for automated optical inspection in high-reliability automotive power stages.
For engineers reviewing the SQRS152ELP-T1_GE3 datasheet, SQRS152ELP-T1_GE3 pinout, SQRS152ELP-T1_GE3 application, or SQRS152ELP-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(on) at 4.5 V gate drive, 100 % Rg and UIS testing, and PowerPAK® SO-8SW package with exposed-drain thermal path.
Technical Context
This MOSFET employs a trench-based silicon process optimized for low conduction loss and fast switching in 12 V automotive systems. Its gate charge profile (Qg = 22.5–34 nC, Qgd = 4.3 nC) supports efficient synchronous rectification and high-frequency DC–DC conversion. The device integrates a robust body diode with trr = 28–42 ns and Qrr = 12–18 nC for reduced switching loss in hard-commutated topologies.
Thermal design is enabled by RthJC = 4.3 °C/W (junction-to-case, drain) and RthJA = 42 °C/W (PCB mount), validated on 1" × 1" FR4 with 2 oz copper. The wettable flank terminals comply with IPC-J-STD-020 moisture sensitivity level 1 and support solder fillet inspection without requiring interconnection at the lead tip.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V battery rail protection and load switching |
| RDS(on) @ 10 V | 5.0 mΩ - Enables <1 W conduction loss at 45 A, critical for high-current motor drivers |
| RDS(on) @ 4.5 V | 7.5 mΩ - Ensures reliable turn-on with standard 5 V logic-level microcontrollers |
| ID (continuous) | 58 A @ TC = 25 °C - Supports high-power solenoid and pump control without external heatsinking |
| TJ range | −55 to +175 °C - Qualified for under-hood engine control units and transmission modules |
| Qg / Qgd | 22.5–34 nC / 4.3 nC - Low gate-drive energy reduces driver IC loading and EMI in 100–500 kHz converters |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics per JESD47 and JESD22 |
Pinout & Package
Package: PowerPAK® SO-8SW - thermally enhanced surface-mount package with exposed drain paddle and wettable flank leads for improved solder joint reliability and thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, S | Source | Common source connection for internal die; tied to PCB ground plane for low-inductance return path |
| 4, G | Gate | Control terminal; requires <2.0–4.6 Ω gate resistance to damp ringing during 10–13.5 ns turn-on delay |
| 5, 6, 7, 8, D | Drain | Exposed copper paddle and side terminals - primary thermal path to PCB; must be connected to large copper pour |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Reduces RDS(on) × Qg figure-of-merit by >25 % vs. prior generation, improving efficiency in 48 V mild-hybrid converters |
| Wettable flank terminals | Enables AOI verification of solder fillets on all four side leads - eliminates X-ray inspection for automotive production lines |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency (2.0–9.4 Ω) and single-pulse avalanche ruggedness (EAS = 9.8 mJ) |
| PowerPAK® SO-8SW footprint | Compatible with SO-8 land pattern while delivering 2× thermal performance via bottom-side thermal pad |
| AEC-Q101 qualification | Validated across temperature cycling, HTRB, UHAST, and ESD (HBM 2 kV, CDM 1 kV) for automotive safety-critical use |
Applications
| Engine Control Unit (ECU) Load Switch | Automotive DC–DC Converter Primary Switch |
|---|---|
Use Scenario: High-side switching of fuel injector or ignition coil in gasoline/diesel ECUs operating at ambient −40 to +125 °C. IC Role / Device Role / Timing Role: N-channel high-side switch controlled via gate driver IC with bootstrap supply; handles repetitive 58 A pulsed loads. Use Value: 175 °C max TJ and AEC-Q101 qualification ensure functional safety compliance; low RDS(on) minimizes self-heating during extended duty cycles. |
Use Scenario: Primary-side synchronous rectifier in 12 V → 48 V bidirectional DC–DC converter for 48 V mild-hybrid vehicles. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET with tr = 4.3–6.1 ns and tf = 8.5–12 ns, driven at 200–300 kHz. Use Value: Low Qgd/Qg ratio improves duty-cycle control fidelity; robust body diode enables zero-voltage switching during reverse conduction. |
| Electric Power Steering (EPS) Motor Driver | Automotive HVAC Blower Controller |
Use Scenario: Half-bridge leg in three-phase inverter driving 300–500 W EPS assist motor inside steering column. IC Role / Device Role / Timing Role: Low-side switch with integrated body diode conducting regenerative current during PWM dead-time. Use Value: trr = 28–42 ns and Qrr = 12–18 nC limit reverse recovery losses; RthJC = 4.3 °C/W enables direct mounting to aluminum heat spreader. |
Use Scenario: PWM-controlled blower motor driver in cabin HVAC system, subject to vibration, condensation, and wide thermal cycling. IC Role / Device Role / Timing Role: High-current N-channel switch replacing mechanical relay; operated at 20–100 Hz with 5–10 A average current. Use Value: Wettable flank leads ensure solder joint integrity over 1000+ thermal cycles; 100 % UIS testing prevents failure during load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 3.7 mΩ @ 10 V, but only rated to 150 °C TJ; no wettable flanks; PQFN 5×6 mm package | Lacks AEC-Q101 full qualification and thermal robustness for under-hood placement | Prefer when lower RDS(on) is prioritized over 175 °C operation and AOI capability |
| ON Semiconductor NTMFS5C410PL | RDS(on) = 4.1 mΩ @ 10 V, 175 °C rated, wettable flanks, but Qg = 42 nC - 25 % higher than SQRS152ELP-T1_GE3 | Higher gate charge increases driver loss and limits maximum switching frequency | Choose when absolute lowest conduction loss dominates over switching efficiency in <100 kHz applications |
Compared with STL220N4F7AG and NTMFS5C410PL, SQRS152ELP-T1_GE3 delivers optimal balance of 175 °C capability, AEC-Q101 compliance, wettable flank AOI support, and low Qg/RDS(on) trade-off - making it preferred for space-constrained, high-temperature automotive power stages where both reliability and efficiency matter.
Availability
SQRS152ELP-T1_GE3 is available at Aetrix Electronics and suitable for automotive engine control, electric power steering, and 48 V DC–DC converter designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SQRS152ELP-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQRS152ELP-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in safety-critical vehicle subsystems.
FAQ
What is the maximum continuous drain current rating for SQRS152ELP-T1_GE3 at 125 °C case temperature?
The SQRS152ELP-T1_GE3 supports 33 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® SO-8SW package under real-world board-level cooling conditions. Engineers must verify actual junction temperature using RthJC = 4.3 °C/W and system-level thermal modeling before finalizing layout for SQRS152ELP-T1_GE3.
Does SQRS152ELP-T1_GE3 have a qualified AEC-Q101 rating, and what tests does that include?
Yes, SQRS152ELP-T1_GE3 is fully AEC-Q101 qualified per the Vishay datasheet revision S23-0284-Rev. A. This includes stress testing for high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, unbiased highly accelerated stress test (UHAST), and electrostatic discharge (HBM 2 kV, CDM 1 kV). The qualification applies to the full SQRS152ELP-T1_GE3 production lot, not just sample units.
What is the significance of "wettable flank terminals" for SQRS152ELP-T1_GE3 in automotive manufacturing?
Wettable flank terminals on SQRS152ELP-T1_GE3 expose copper along the vertical sidewalls of all four leads, enabling automated optical inspection (AOI) of solder fillets after reflow. This eliminates reliance on X-ray for process validation in high-volume automotive assembly lines, reducing cost and cycle time while improving defect detection for SQRS152ELP-T1_GE3 solder joints - a requirement for IATF 16949-compliant production.
How does the body diode performance of SQRS152ELP-T1_GE3 compare to standard MOSFETs in freewheeling applications?
The SQRS152ELP-T1_GE3 body diode delivers trr = 28–42 ns and Qrr = 12–18 nC at IF = 6 A and di/dt = 100 A/μs - significantly faster and lower-charge than legacy automotive MOSFETs. This reduces switching loss and voltage overshoot during commutation in half-bridge and synchronous rectifier topologies, directly improving efficiency in SQRS152ELP-T1_GE3-based motor drivers and DC–DC converters.
Can SQRS152ELP-T1_GE3 be used in high-side switch configurations without a dedicated high-side driver?
No - SQRS152ELP-T1_GE3 is an N-channel MOSFET and requires gate voltage ≥ VDS + VGS(th) for full enhancement. In high-side configurations, it must be paired with a bootstrap or isolated gate driver capable of generating ≥ 12 V above the drain potential. Direct microcontroller GPIO drive is insufficient; proper level-shifting and transient protection are essential for reliable SQRS152ELP-T1_GE3 operation in such roles.
SQRS152ELP-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1633 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8SW
SQRS152ELP-T1_GE3 FAQ
1.How can I place an order for SQRS152ELP-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQRS152ELP-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQRS152ELP-T1_GE3 reliable?
The price and inventory of SQRS152ELP-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQRS152ELP-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQRS152ELP-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQRS152ELP-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQRS152ELP-T1_GE3?
SQRS152ELP-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQRS152ELP-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQRS152ELP-T1_GE3?
For technical support, including SQRS152ELP-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQRS152ELP-T1_GE3 requirements.
6.How does Aetrix verify that SQRS152ELP-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQRS152ELP-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQRS152ELP-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQRS152ELP-T1_GE3?
All SQRS152ELP-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQRS152ELP-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQRS152ELP-T1_GE3 part is unused and in its original packaging.
Return procedure for SQRS152ELP-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQRS152ELP-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
