Vishay Siliconix SQS110ENW-T1_GE3

Overview

SQS110ENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 100 V, 57 A (T_C = 25 °C) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8SLW package with wettable flank terminals, R_DS(on) = 0.0132 Ω at V_GS = 10 V, and AEC-Q101 qualification - used in high-efficiency DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the SQS110ENW-T1_GE3 datasheet, SQS110ENW-T1_GE3 pinout, SQS110ENW-T1_GE3 application, or SQS110ENW-T1_GE3 equivalent, key selection criteria include its 175 °C junction rating, low R_thJC = 1.26 °C/W, 100% R_g and UIS tested reliability, and compatibility with automated optical inspection (AOI) due to wettable flanks.

Technical Context

This MOSFET employs trench-based silicon architecture optimized for low conduction loss and fast switching in high-temperature automotive environments. Its gate charge profile (Q_g = 34–51 nC, Q_gd = 6 nC) supports efficient PWM operation in 48 V mild-hybrid systems, while the body diode's t_rr = 35–70 ns and Q_rr = 52–104 nC enable robust synchronous rectification.

The device features a thermally enhanced PowerPAK® 1212-8SLW package with exposed drain on bottom side and wettable flank terminals for solder fillet visibility. Junction-to-case thermal resistance is 1.26 °C/W, enabling high-power density designs without external heatsinking when mounted on 1" FR4 PCBs.

Key Specifications

Pinout & Package

Package: PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm profile with wettable flank terminals and exposed drain pad on bottom side for thermal and mechanical robustness.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N10F7AG and IRFH7107TRPBF, SQS110ENW-T1_GE3 uniquely balances 57 A current, 1.26 °C/W thermal performance, wettable flanks, and full AEC-Q101 compliance in a 3.3 mm × 3.3 mm footprint - making it optimal for space- and reliability-critical automotive power stages.

Availability

SQS110ENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, 48 V mild-hybrid converters, and electric power steering systems requiring stable component supply across multi-year automotive production programs.

Supply support for SQS110ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS110ENW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-temperature, high-current switching in powertrain and chassis control modules.

FAQ

What is the maximum continuous drain current rating for SQS110ENW-T1_GE3 at 125 °C case temperature?

The SQS110ENW-T1_GE3 supports 33 A continuous drain current at T_C = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8SLW package and ensures safe operation in high-ambient under-hood environments. The SQS110ENW-T1_GE3 maintains R_DS(on) ≤ 0.0275 Ω at this condition, preserving efficiency in sustained high-load scenarios.

Does SQS110ENW-T1_GE3 have wettable flank terminals, and why does that matter for automotive assembly?

Yes, the SQS110ENW-T1_GE3 features wettable flank terminals - vertical sidewalls on the package edges that allow visible solder fillets during automated optical inspection (AOI). This is critical for zero-defect automotive manufacturing, as it enables non-destructive verification of solder joint integrity without X-ray. The SQS110ENW-T1_GE3's wettable flanks comply with IPC-J-STD-001 and are explicitly validated in Vishay's S23-0318 datasheet.

Is SQS110ENW-T1_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, the SQS110ENW-T1_GE3 is fully AEC-Q101 qualified, as stated in its product summary and confirmed in Vishay document S23-0318-Rev. B. Qualification includes stress tests such as high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), unclamped inductive switching (UIS), and electrostatic discharge (HBM ≥ 2 kV). The SQS110ENW-T1_GE3 also undergoes 100% R_g and UIS screening per lot.

What is the typical total gate charge (Q_g) of SQS110ENW-T1_GE3, and how does it affect switching performance?

The SQS110ENW-T1_GE3 has a typical total gate charge (Q_g) of 34 nC at V_GS = 10 V, V_DS = 50 V, and I_D = 5 A. This value enables efficient gate driving with standard automotive gate drivers (e.g., TI UCC27531), minimizing switching losses in 100–300 kHz applications. The SQS110ENW-T1_GE3's low Q_gd/Q_g ratio (≈18%) further suppresses Miller-induced turn-on, improving noise immunity in noisy ECU environments.

Can SQS110ENW-T1_GE3 be used as a synchronous rectifier in a 48 V DC-DC converter, and what body diode parameters support that?

Yes, the SQS110ENW-T1_GE3 is suitable as a synchronous rectifier in 48 V DC-DC converters. Its body diode exhibits V_SD = 0.82–1.1 V at I_F = 10 A and t_rr = 35–70 ns, with Q_rr = 52–104 nC - parameters verified in the datasheet's "Source-Drain Diode Ratings" section. These values reduce reverse recovery loss and improve light-load efficiency compared to Schottky alternatives, especially at elevated temperatures up to 175 °C.