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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS120ELNW-T1_GE3

Name: SQS120ELNW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS120ELNW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS120ELNW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SLW

Datasheet:: SQS120ELNW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 30 V (D-S)

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Product details

Overview

SQS120ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in PowerPAK® 1212-8SLW package, with R_DS(on) = 1.8 mΩ at V_GS = 10 V, 192 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood powertrain applications.

For engineers reviewing the SQS120ELNW-T1_GE3 datasheet, SQS120ELNW-T1_GE3 pinout, SQS120ELNW-T1_GE3 application, or SQS120ELNW-T1_GE3 equivalent, this page delivers verified thermal resistance (R_thJC = 1.26 °C/W), wettable flank terminals for automated optical inspection, and 175 °C junction temperature capability - critical for high-reliability 48 V mild hybrid DC-DC converters and electric power steering motor drivers.

Technical Context

This TrenchFET® Gen IV MOSFET uses silicon process optimization to achieve ultra-low on-resistance while maintaining robust avalanche energy rating (E_AS = 52 mJ) and 100 % R_g and UIS tested reliability. Its gate charge profile (Q_g = 59–88 nC) supports high-frequency synchronous rectification up to 500 kHz.

The device integrates a low-V_SD body diode (0.82–1.1 V at I_F = 10 A) with fast reverse recovery (t_rr = 40–80 ns) and low Q_rr (41–81 nC), enabling efficient freewheeling in bidirectional buck-boost topologies used in 12 V/48 V dual-battery systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V/48 V automotive bus protection and switching
R_DS(on) @ V_GS = 10 V	1.8 mΩ - Enables <1.9 W conduction loss at 100 A, reducing heatsink requirements
I_D (continuous, T_C = 25 °C)	192 A - Supports high-current motor phase legs and battery disconnect switches
R_thJC	1.26 °C/W - Allows direct thermal coupling to copper-clad PCBs or heatsinks for compact power modules
T_J max	+175 °C - Qualified for under-hood operation without derating in engine control units
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics per JESD22-A108
Wettable flanks	Yes - Enables automated solder joint inspection (AOI) of side terminals on SMT assembly lines

Pinout & Package

PowerPAK® 1212-8SLW is a 3.3 mm × 3.3 mm surface-mount package with exposed drain paddle and wettable flank terminals. The 8-pin layout features 4 parallel source pins (S1–S4), 4 parallel drain pins (D1–D8), and 1 gate pin (G), optimized for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
D1–D8	Drain (common)	Electrically tied to exposed copper paddle; primary heat path and high-current return node
S1–S4	Source (common)	Four independent terminals reduce bond wire inductance and improve current sharing in paralleled configurations
G	Gate	Single control input; gate resistance R_g = 0.6–2.4 Ω enables stable switching with minimal external gate resistor

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers 1.8 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - 22 % lower on-resistance than prior generation at same voltage rating
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, UHAST, and ESD testing - required for powertrain ECUs
Wettable flank terminals	Enables 100 % automated optical inspection of solder fillets on side walls - eliminates manual X-ray verification cost
Low-profile 0.75 mm height	Permits stacking with adjacent components in space-constrained ADAS domain controllers and battery management modules
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor drive faults

Applications

Electric Power Steering (EPS)	48 V Mild Hybrid DC-DC Converter
Use Scenario: High-efficiency three-phase inverter driving brushless EPS motor with peak currents >150 A. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, operating at 20–40 kHz PWM frequency. Use Value: 1.8 mΩ R_DS(on) reduces conduction losses by 35 % vs. legacy 2.8 mΩ devices, lowering MOSFET temperature rise and enabling smaller heatsinks.	Use Scenario: Synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter for dual-battery architectures. IC Role / Device Role / Timing Role: Secondary-side power switch handling 100+ A continuous current with fast body diode recovery. Use Value: t_rr = 40–80 ns and Q_rr = 41–81 nC minimize switching losses during zero-voltage switching transitions, improving efficiency above 95 %.
Engine Control Unit (ECU) Load Switch	On-Board Charger (OBC) Pre-charge Circuit
Use Scenario: High-current load switch controlling fuel pump, turbocharger actuator, or cooling fan in engine bay. IC Role / Device Role / Timing Role: Single-pole, high-side or low-side power switch with integrated overtemperature protection via thermal sensing. Use Value: +175 °C rated junction temperature allows direct mounting on ECU metal housing without thermal derating - simplifies thermal design.	Use Scenario: Pre-charge MOSFET limiting inrush current into high-voltage DC-link capacitors during OBC startup. IC Role / Device Role / Timing Role: Soft-start switch conducting brief high-current pulses (IDM = 415 A) before main contactor closure. Use Value: E_AS = 52 mJ and I_AS = 33 A enable safe single-pulse energy absorption during capacitor charging transients.

Electric Power Steering (EPS)

48 V Mild Hybrid DC-DC Converter

Use Scenario: High-efficiency three-phase inverter driving brushless EPS motor with peak currents >150 A.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, operating at 20–40 kHz PWM frequency.

Use Value: 1.8 mΩ R_DS(on) reduces conduction losses by 35 % vs. legacy 2.8 mΩ devices, lowering MOSFET temperature rise and enabling smaller heatsinks.

Use Scenario: Synchronous rectifier in 48 V-to-12 V bi-directional buck-boost converter for dual-battery architectures.

IC Role / Device Role / Timing Role: Secondary-side power switch handling 100+ A continuous current with fast body diode recovery.

Use Value: t_rr = 40–80 ns and Q_rr = 41–81 nC minimize switching losses during zero-voltage switching transitions, improving efficiency above 95 %.

Engine Control Unit (ECU) Load Switch

On-Board Charger (OBC) Pre-charge Circuit

Use Scenario: High-current load switch controlling fuel pump, turbocharger actuator, or cooling fan in engine bay.

IC Role / Device Role / Timing Role: Single-pole, high-side or low-side power switch with integrated overtemperature protection via thermal sensing.

Use Value: +175 °C rated junction temperature allows direct mounting on ECU metal housing without thermal derating - simplifies thermal design.

Use Scenario: Pre-charge MOSFET limiting inrush current into high-voltage DC-link capacitors during OBC startup.

IC Role / Device Role / Timing Role: Soft-start switch conducting brief high-current pulses (IDM = 415 A) before main contactor closure.

Use Value: E_AS = 52 mJ and I_AS = 33 A enable safe single-pulse energy absorption during capacitor charging transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 3.2 mΩ @ 10 V; TO-220AB package; no AEC-Q101 qualification	Limited to non-automotive industrial power supplies due to lack of automotive qualification and higher on-resistance	Select only for cost-sensitive non-automotive designs where thermal performance and qualification are secondary
STL220N3LLH6	R_DS(on) = 1.7 mΩ @ 10 V; PowerFLAT™ 5x6 package; AEC-Q101 qualified; no wettable flanks	Compatible in 48 V DC-DC but lacks AOI-compatible terminals - requires X-ray inspection for solder joint validation	Prefer when board-level AOI is unavailable and thermal performance is prioritized over assembly verification cost

Compared with IRL1404ZPBF and STL220N3LLH6, SQS120ELNW-T1_GE3 uniquely combines AEC-Q101 qualification, wettable flank terminals, and 1.8 mΩ on-resistance in a 3.3 mm × 3.3 mm footprint - making it optimal for space-constrained, high-volume automotive production requiring full automated optical inspection.

Availability

SQS120ELNW-T1_GE3 is available at Aetrix Electronics and suitable for electric power steering systems, 48 V mild hybrid DC-DC converters, and engine control unit load switching requiring stable component supply across extended automotive product lifecycles.

Supply support for SQS120ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS120ELNW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature powertrain and chassis applications demanding AEC-Q101 compliance and long-term reliability.

FAQ

What is the maximum continuous drain current rating for SQS120ELNW-T1_GE3 at 125 °C case temperature?

The SQS120ELNW-T1_GE3 supports 110 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® 1212-8SLW package and must be validated against actual board-level thermal resistance in the target application. SQS120ELNW-T1_GE3 maintains R_DS(on) stability up to 175 °C junction temperature.

Does SQS120ELNW-T1_GE3 have wettable flank terminals, and why does that matter for manufacturing?

Yes, SQS120ELNW-T1_GE3 features wettable flank terminals on all eight side pins. This design enables automated optical inspection (AOI) of solder fillets during SMT reflow, eliminating the need for costly X-ray inspection in high-volume automotive assembly. SQS120ELNW-T1_GE3 is explicitly documented with this feature in its Vishay datasheet revision S23-0244-Rev. A.

Is SQS120ELNW-T1_GE3 qualified to AEC-Q101, and what tests does that include?

Yes, SQS120ELNW-T1_GE3 is fully AEC-Q101 qualified. This includes stress testing per JESD22 standards: high-temperature operating life (HTOL), temperature cycling (TC), unbiased highly accelerated stress test (UHAST), and human-body-model electrostatic discharge (HBM ESD). SQS120ELNW-T1_GE3 is also 100 % R_g and UIS tested per production screening.

What is the typical total gate charge (Q_g) of SQS120ELNW-T1_GE3, and how does it affect switching performance?

The typical total gate charge (Q_g) of SQS120ELNW-T1_GE3 is 59 nC at V_GS = 10 V, V_DS = 15 V, and I_D = 4 A. This value enables efficient gate drive with standard MOSFET drivers and supports switching frequencies up to 500 kHz in synchronous rectifiers. SQS120ELNW-T1_GE3 also specifies Q_gd = 10 nC, critical for minimizing Miller plateau duration and dv/dt-induced turn-on risk.

Can SQS120ELNW-T1_GE3 be used in bidirectional power flow applications like 48 V/12 V DC-DC converters?

Yes, SQS120ELNW-T1_GE3 is suitable for bidirectional topologies due to its low R_DS(on), fast body diode (t_rr = 40–80 ns), and low Q_rr (41–81 nC). Its symmetric conduction capability and 175 °C junction rating support continuous reverse conduction in buck-boost and CLLC resonant converters. SQS120ELNW-T1_GE3 is referenced in Vishay's application notes for 48 V automotive DC-DC designs.

SQS120ELNW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8SLW

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 192A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4590 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 119W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK® 1212-8SLW

SQS120ELNW-T1_GE3 FAQ

1.How can I place an order for SQS120ELNW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS120ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS120ELNW-T1_GE3 reliable?

The price and inventory of SQS120ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS120ELNW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS120ELNW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS120ELNW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS120ELNW-T1_GE3?

SQS120ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS120ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS120ELNW-T1_GE3?

For technical support, including SQS120ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS120ELNW-T1_GE3 requirements.

6.How does Aetrix verify that SQS120ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS120ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS120ELNW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS120ELNW-T1_GE3?

All SQS120ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS120ELNW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS120ELNW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS120ELNW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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