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Vishay Siliconix SQS124ELNW-T1_GE3
- Part No.:
- SQS124ELNW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
SQS124ELNW-T1_GE3.pdf
- Description:
- MOSFET N-CH 30V 100A TO252AA
- Quantity:
- Payment:
- Shipping:
Inventory:7,710
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Product details
Overview
SQS124ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 30 V MOSFET in PowerPAK® 1212-8SLW package, featuring RDS(on) = 3.0 mΩ at VGS = 10 V and 4.7 mΩ at VGS = 4.5 V, rated for 107 A continuous drain current at TC = 25 °C, and qualified to AEC-Q101 for under-hood powertrain and body control modules.
For engineers reviewing the SQS124ELNW-T1_GE3 datasheet, SQS124ELNW-T1_GE3 pinout, SQS124ELNW-T1_GE3 application, or SQS124ELNW-T1_GE3 equivalent, this device is selected for high-current, high-temperature switching in 12 V automotive systems where low conduction loss, wettable flank terminals for solder inspection, and 175 °C junction operation are required.
Technical Context
This TrenchFET® Gen IV MOSFET uses silicon process optimization to achieve ultra-low RDS(on) with enhanced thermal performance: RthJC = 1.9 °C/W enables efficient heat transfer to the PCB, and its 0.75 mm profile supports compact layout in space-constrained ECUs. The device integrates a robust body diode with trr = 33–66 ns and Qrr = 22–45 nC for synchronous rectification and freewheeling.
It operates across -55 °C to +175 °C junction temperature range and supports gate drive voltages from 4.5 V to 10 V, with VGS(th) tightly specified at 1.5–2.5 V. Dynamic parameters include Qg = 36–54 nC and Ciss = 2103–2945 pF, enabling fast switching with controlled EMI in DC/DC converters and motor drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V automotive battery rail applications |
| RDS(on) @ VGS = 10 V | 3.0 mΩ - Enables <1 W conduction loss at 50 A, critical for high-efficiency power stages |
| RDS(on) @ VGS = 4.5 V | 4.7 mΩ - Ensures robust turn-on with standard 5 V logic-level or microcontroller GPIO drive |
| ID (continuous) @ TC = 25 °C | 107 A - Supports high-current loads such as radiator fans, fuel pumps, and solenoid drivers |
| TJ operating range | -55 °C to +175 °C - Certified for under-hood environments including engine control units and transmission modules |
| AEC-Q101 qualified | Yes - Validated for automotive reliability per stress test requirements including HTRB, H3TRB, and UIS |
| Package | PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm footprint with wettable flank terminals for automated optical solder inspection |
Pinout & Package
PowerPAK® 1212-8SLW is a surface-mount, 8-terminal leadless package with exposed drain paddle on bottom side. Wettable flank terminals enable IPC-A-610-compliant solder fillet inspection without X-ray.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source connections reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals tied to internal copper paddle - primary thermal path to PCB ground plane |
| G | Gate (G) | Single gate terminal optimized for low Rg (0.6–2.8 Ω) to minimize switching losses and oscillation risk |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 30% lower RDS(on) vs. prior generation while maintaining avalanche ruggedness (EAS = 30 mJ) |
| Wettable flank terminals | Enables AOI-based solder joint verification on production lines - eliminates need for X-ray inspection |
| 100% Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching robustness per AEC-Q101 |
| Low thermal resistance | RthJC = 1.9 °C/W allows >75 W power dissipation at TC = 125 °C - suitable for thermally dense modules |
| 175 °C junction rating | Supports operation in proximity to hot components (e.g., near exhaust manifolds or inverters) without derating |
Applications
| Engine Control Unit (ECU) | Electric Power Steering (EPS) |
|---|---|
Use Scenario: High-side switching of fuel injector solenoids in gasoline direct injection systems. IC Role / Device Role / Timing Role: N-channel MOSFET used as low-loss, fast-turning load switch with precise PWM timing control. Use Value: 4.7 mΩ RDS(on) at 4.5 V gate drive ensures full enhancement using standard MCU outputs, minimizing voltage drop and thermal rise during 10 ms pulses. |
Use Scenario: Low-side driver for three-phase brushless DC motor windings in column-assist EPS modules. IC Role / Device Role / Timing Role: Power switch in inverter half-bridge leg, handling peak currents up to 80 A with <100 ns switching transitions. Use Value: 36–54 nC total gate charge and 12–18 ns turn-on delay support high-frequency (20–50 kHz) PWM without excessive driver loss. |
| Body Control Module (BCM) | Automotive Lighting Driver |
Use Scenario: Driving high-current HVAC blower motors and window lift actuators in centralized BCMs. IC Role / Device Role / Timing Role: Robust N-channel switch managing intermittent 60–100 A surges during motor startup and stall conditions. Use Value: 298 A pulsed drain current rating and 24.5 A single-pulse avalanche capability prevent failure during motor lock-up events. |
Use Scenario: Constant-current LED string switching in adaptive front lighting systems (AFS) with thermal feedback. IC Role / Device Role / Timing Role: Precision current sink controlling 5–10 A LED arrays with closed-loop dimming via PWM modulation. Use Value: 1.9 °C/W RthJC and 175 °C max TJ allow sustained operation at ambient >105 °C inside headlamp housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | RDS(on) = 2.2 mΩ @ 10 V, but only rated to 150 °C TJ; no wettable flanks; SO-8FL package | Lacks AEC-Q101 qualification for 175 °C operation; unsuitable for under-hood ECU placement | Select when lower RDS(on) is prioritized over extreme temperature capability and solder inspection needs |
| IRL1404ZPBF | RDS(on) = 4.0 mΩ @ 10 V; TO-220AB package; not AEC-Q101 qualified; RthJC = 2.5 °C/W | Through-hole mounting and higher thermal resistance limit use in compact, high-power-density modules | Choose only for legacy designs requiring through-hole assembly or non-automotive industrial use |
Compared with STL220N3LLH6 and IRL1404ZPBF, SQS124ELNW-T1_GE3 uniquely combines AEC-Q101 175 °C qualification, wettable flank terminals, and sub-5 mΩ RDS(on) at 4.5 V in a 3.3 mm × 3.3 mm footprint - making it the only option for next-gen automotive power modules demanding both miniaturization and under-hood reliability.
Availability
SQS124ELNW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and body control modules requiring stable component supply across extended automotive product lifecycles.
Supply support for SQS124ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS124ELNW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature switching in 12 V vehicle electrical architectures.
FAQ
What is the maximum junction temperature rating for SQS124ELNW-T1_GE3?
The SQS124ELNW-T1_GE3 is rated for continuous operation from -55 °C to +175 °C junction temperature, fully compliant with AEC-Q101 stress testing requirements for under-hood automotive applications. This rating is validated across all manufacturing lots and applies to both steady-state and transient thermal conditions per JEDEC JESD51-14 methodology.
Does SQS124ELNW-T1_GE3 support 4.5 V gate drive in automotive systems?
Yes, SQS124ELNW-T1_GE3 guarantees RDS(on) ≤ 4.7 mΩ at VGS = 4.5 V and ID = 10 A, making it compatible with standard 5 V logic-level microcontrollers and gate drivers commonly used in automotive ECUs. Its VGS(th) range of 1.5–2.5 V ensures reliable turn-on even with supply tolerance and temperature drift.
Is SQS124ELNW-T1_GE3 qualified to AEC-Q101?
Yes, SQS124ELNW-T1_GE3 is fully AEC-Q101 qualified, with 100 % Rg and UIS testing performed on every production lot. Qualification includes HTOL, HTRB, TC, UHAST, and mechanical stress tests per Rev. D of the AEC-Q101 standard, documented in Vishay's reliability report for document number 62193.
What package type does SQS124ELNW-T1_GE3 use, and why is it important?
SQS124ELNW-T1_GE3 uses the PowerPAK® 1212-8SLW package - a 3.3 mm × 3.3 mm leadless surface-mount device with wettable flank terminals. This package enables automated optical inspection of solder joints and achieves RthJC = 1.9 °C/W, critical for thermal management in densely packed automotive modules where board space and heat dissipation are constrained.
Can SQS124ELNW-T1_GE3 replace older-generation TrenchFET devices in existing designs?
SQS124ELNW-T1_GE3 is a drop-in replacement for earlier Vishay PowerPAK 1212-8 devices with identical footprint and pinout, including SQS120ELNW and SQS122ELNW. Its improved RDS(on), lower Qg, and extended temperature rating provide immediate efficiency and reliability gains without PCB redesign - provided gate drive strength and layout parasitics remain within specification limits.
SQS124ELNW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 107A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 54 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2945 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8SLW
SQS124ELNW-T1_GE3 FAQ
1.How can I place an order for SQS124ELNW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS124ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS124ELNW-T1_GE3 reliable?
The price and inventory of SQS124ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS124ELNW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS124ELNW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS124ELNW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS124ELNW-T1_GE3?
SQS124ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS124ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS124ELNW-T1_GE3?
For technical support, including SQS124ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS124ELNW-T1_GE3 requirements.
6.How does Aetrix verify that SQS124ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS124ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS124ELNW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS124ELNW-T1_GE3?
All SQS124ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS124ELNW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS124ELNW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS124ELNW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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