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Vishay Siliconix SQS140ELNW-T1_GE3
- Part No.:
- SQS140ELNW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SLW
- Datasheet:
-
SQS140ELNW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:3,348
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Product details
Overview
SQS140ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET rated for 40 V drain-source voltage, 153 A continuous drain current at TC = 25 °C, and 2.53 mΩ RDS(on) at VGS = 10 V. It features wettable flank terminals, AEC-Q101 qualification, and operates up to +175 °C junction temperature-designed for high-current DC-DC converters and motor control in engine bay modules.
For engineers reviewing the SQS140ELNW-T1_GE3 datasheet, SQS140ELNW-T1_GE3 pinout, SQS140ELNW-T1_GE3 application, or SQS140ELNW-T1_GE3 equivalent, key selection criteria include its 1.26 °C/W junction-to-case thermal resistance, 100 % UIS and Rg testing, low-profile PowerPAK 1212-8SLW package, and validated performance under automotive thermal cycling and humidity requirements.
Technical Context
This MOSFET employs a trench-based silicon structure optimized for low conduction loss and fast switching in high-efficiency power stages. Its gate charge profile (Qg = 53 nC typ., Qgd = 10 nC) supports high-frequency synchronous rectification with minimal drive loss.
The device integrates a robust body diode with trr = 35 ns (typ.) and Qrr = 28 nC (typ.), enabling reliable freewheeling in buck and half-bridge topologies. Thermal design is supported by validated RthJC = 1.26 °C/W and wettable flank terminals for automated optical solder-joint inspection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery systems with load dump margin. |
| RDS(on) @ VGS = 10 V | 2.53 mΩ - Enables <1 W conduction loss at 153 A, critical for high-current power distribution units. |
| ID (continuous) | 153 A @ TC = 25 °C - Supports high-power motor drivers and starter solenoid interfaces without external heatsinking. |
| TJ operating range | –55 °C to +175 °C - Qualified for under-hood placement per AEC-Q101, eliminating need for remote mounting. |
| RthJC | 1.26 °C/W - Allows direct thermal coupling to copper planes or heatsinks, simplifying thermal management in compact ECUs. |
| Qg / Qgd | 53 nC / 10 nC - Enables efficient gate driving at 200–500 kHz switching frequencies with standard 1-A gate drivers. |
| Body diode VSD | 0.82 V @ IF = 10 A - Reduces freewheeling loss in asymmetric PWM applications like BLDC phase-legs. |
Pinout & Package
Package: PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm, 0.75 mm profile, wettable flank terminals for AOI-compatible solder joints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–4, S | Source | Four parallel source terminals reduce loop inductance and improve current sharing in high-di/dt switching. |
| 5–8, D | Drain | Four exposed drain pads on bottom side provide primary thermal path to PCB copper and enable low-inductance power routing. |
| G | Gate | Single top-side gate pad with 1.1 Ω typical gate resistance-optimized for EMI-controlled turn-on/turn-off with minimal external gate resistor. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, HAST, and mechanical shock-no additional qualification required for Tier-1 designs. |
| Wettable flank terminals | Enables automated optical inspection of solder fillets on all four side edges, improving process yield in SMT lines. |
| 100 % UIS tested | Each unit withstands unclamped inductive switching stress up to 32 A avalanche current-ensures robustness in motor fault conditions. |
| TrenchFET® Gen IV architecture | Delivers 15 % lower RDS(on) vs. prior generation at same die size, enabling higher power density in space-constrained modules. |
| Low thermal resistance (RthJC = 1.26 °C/W) | Permits >90 W power dissipation with 50 °C case rise-eliminates need for bolt-down heatsinks in 48 V mild hybrid inverters. |
Applications
| Engine Control Unit (ECU) Power Stage | 48 V Mild Hybrid DC-DC Converter |
|---|---|
Use Scenario: High-current fuel injector driver with peak loads up to 120 A and ambient temperatures exceeding 150 °C near exhaust manifolds. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil energization; requires fast turn-off (<50 ns fall time) and avalanche ruggedness during coil flyback. Use Value: 32 A single-pulse avalanche rating and 7 ns fall time ensure reliable operation without snubbers, reducing BOM count and board area. | Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC-DC converter for regenerative braking energy recovery. IC Role / Device Role / Timing Role: High-side and low-side switching element operating at 300 kHz with 50 % duty cycle; demands low Qg and stable RDS(on) over temperature. Use Value: 2.53 mΩ RDS(on) at 10 V and 53 nC total gate charge minimize conduction and switching losses, achieving >97 % peak efficiency. |
| Electric Power Steering (EPS) Motor Driver | Automotive HVAC Blower Module |
Use Scenario: Three-phase inverter stage supplying up to 80 A RMS to brushless steering motor in confined front-end chassis space. IC Role / Device Role / Timing Role: Half-bridge leg switch with integrated body diode conducting reverse recovery current during PWM dead-time. Use Value: 35 ns body diode reverse recovery time and 28 nC Qrr suppress voltage spikes and reduce EMI filtering requirements. | Use Scenario: PWM-controlled blower motor driver in cabin HVAC system requiring silent operation and long-term reliability at 85 °C ambient. IC Role / Device Role / Timing Role: Low-side MOSFET modulating motor current with 20 kHz carrier frequency; must survive 1000+ thermal cycles over 15-year life. Use Value: AEC-Q101 qualification and –55 °C to +175 °C operation guarantee zero infant mortality and stable RDS(on) drift across lifetime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 3.2 mΩ @ 10 V; no AEC-Q101 qualification; TO-220AB package (10×15 mm). | Lacks automotive qualification and thermal performance; suitable only for industrial non-automotive 40 V switches. | Select only if AEC-Q101 is not required and board space allows larger through-hole footprint. |
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 10 V; AEC-Q101 qualified; PowerFLAT 5×6 package; no wettable flanks. | Lower RDS(on) but lacks optical inspection capability; thermal resistance RthJC = 1.5 °C/W (higher than SQS140ELNW-T1_GE3). | Prefer when ultimate conduction loss is prioritized over AOI compatibility and thermal margin. |
Compared with IRL1404ZPBF and STL220N4F7AG, SQS140ELNW-T1_GE3 uniquely balances AEC-Q101 compliance, wettable flank manufacturability, and best-in-class RthJC (1.26 °C/W), making it optimal for space- and reliability-critical automotive power stages where both process yield and thermal headroom are constrained.
Availability
SQS140ELNW-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution units, electric power steering inverters, 48 V mild hybrid DC-DC converters, and engine control module power stages requiring stable component supply across extended product lifecycles.
Supply support for SQS140ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS140ELNW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in engine compartment and chassis-mounted electronic control units.
FAQ
What is the maximum continuous drain current rating for SQS140ELNW-T1_GE3 at 125 °C case temperature?
The SQS140ELNW-T1_GE3 supports 88 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8SLW package and ensures safe operation within the device's 175 °C maximum junction temperature limit. Designers must verify actual case temperature under load using RthJC = 1.26 °C/W and system-level thermal modeling before finalizing layout.
Does SQS140ELNW-T1_GE3 have wettable flank terminals, and why does that matter for manufacturing?
Yes, SQS140ELNW-T1_GE3 features wettable flank terminals on all four side edges of the PowerPAK 1212-8SLW package. This enables automated optical inspection (AOI) of solder fillets during SMT reflow, significantly improving first-pass yield and reducing reliance on X-ray inspection for critical automotive assemblies. The feature directly supports IATF 16949 process validation requirements.
Is SQS140ELNW-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQS140ELNW-T1_GE3 is fully AEC-Q101 qualified. This includes stress tests for temperature cycling (–55 °C to +175 °C), high-accelerated temperature/humidity stress (HAST), unbiased highly accelerated stress test (uHAST), and mechanical shock. Additionally, 100 % of units undergo Rg and UIS (unclamped inductive switching) screening-critical for automotive motor and solenoid drive reliability.
What is the typical gate charge (Qg) of SQS140ELNW-T1_GE3, and how does it affect gate driver selection?
The SQS140ELNW-T1_GE3 has a typical total gate charge (Qg) of 53 nC at VGS = 10 V, with Qgd = 10 nC. This value determines the energy required to switch the MOSFET and influences gate driver sizing: a 1-A peak driver can achieve ~50 ns turn-on delay, while higher-current drivers (>2 A) are recommended for >300 kHz operation to minimize switching loss. Gate resistance should be tuned to balance EMI and dV/dt control.
Can SQS140ELNW-T1_GE3 be used in synchronous rectification applications, and what body diode parameters support that?
Yes, SQS140ELNW-T1_GE3 is suitable for synchronous rectification due to its fast, low-loss body diode: typical reverse recovery time (trr) is 35 ns, Qrr is 28 nC, and forward voltage (VSD) is 0.82 V at 10 A. These values minimize dead-time conduction loss and voltage overshoot in buck and LLC topologies. Its 100 % UIS-tested ruggedness further ensures reliability during transient reverse-bias events.
SQS140ELNW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® GenIV
- Package/Case:
- PowerPAK® 1212-8SLW
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 153A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.53mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4051 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 119W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8SLW
SQS140ELNW-T1_GE3 FAQ
1.How can I place an order for SQS140ELNW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS140ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS140ELNW-T1_GE3 reliable?
The price and inventory of SQS140ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS140ELNW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS140ELNW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS140ELNW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS140ELNW-T1_GE3?
SQS140ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS140ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS140ELNW-T1_GE3?
For technical support, including SQS140ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS140ELNW-T1_GE3 requirements.
6.How does Aetrix verify that SQS140ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS140ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS140ELNW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS140ELNW-T1_GE3?
All SQS140ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS140ELNW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS140ELNW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS140ELNW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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