My Inquiry
My Account
Vishay Siliconix SQS140ENW-T1_GE3
- Part No.:
- SQS140ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8SLW
- Datasheet:
-
SQS140ENW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40 V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:7,462
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SQS140ENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 40 V MOSFET in PowerPAK® 1212-8SLW package, with RDS(on) = 2.53 mΩ at VGS = 10 V, 152 A continuous drain current at TC = 25 °C, and AEC-Q101 qualification for under-hood power switching in 48 V systems.
For engineers reviewing the SQS140ENW-T1_GE3 datasheet, SQS140ENW-T1_GE3 pinout, SQS140ENW-T1_GE3 application, or SQS140ENW-T1_GE3 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, 175 °C junction rating, low RthJC = 1.26 °C/W, and 100 % Rg and UIS tested performance.
Technical Context
This TrenchFET® Gen IV MOSFET uses silicon technology optimized for high-current, high-temperature automotive power conversion. Its gate charge profile (Qg = 38–57 nC, Qgd = 8 nC) supports efficient synchronous rectification and fast-switching DC/DC stages.
The device integrates a robust body diode with trr = 38–78 ns and Qrr = 34–70 nC, enabling reliable freewheeling in high-frequency buck converters and motor phase-legs where reverse recovery behavior directly impacts EMI and efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 48 V nominal battery rail applications |
| RDS(on) @ 10 V | 2.53 mΩ - Enables <1.5 W conduction loss at 80 A, critical for thermal management in compact modules |
| ID (continuous) | 152 A @ TC = 25 °C - Supports high-current load switches without parallel devices |
| RthJC | 1.26 °C/W - Allows direct thermal coupling to heatsink or copper plane for high-power density designs |
| AEC-Q101 qualified | Qualified per automotive reliability standard - Required for engine control, ADAS, and EV subsystems |
| Wettable flanks | Exposed copper terminations on all 8 sides - Enables automated solder joint inspection (AOI) in production |
| TJ max | 175 °C - Sustains operation in under-hood environments with minimal derating |
Pinout & Package
Package: PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm low-profile thermally enhanced leadless package with wettable flank terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 (D) | Drain | Four parallel drain terminals minimize conduction loss and enhance thermal path to PCB copper pour |
| G (center pad) | Gate | Single central gate terminal minimizes gate loop inductance for stable high-speed switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV process | Delivers 20 % lower RDS(on) vs. prior generation at same die size, improving power density |
| 100 % Rg and UIS tested | Ensures gate robustness against overvoltage transients and ruggedness against unclamped inductive switching stress |
| Low thermal resistance (RthJC = 1.26 °C/W) | Enables >90 W power dissipation at TC = 100 °C without external heatsink |
| 0.75 mm profile | Supports ultra-thin power modules and stacked PCB architectures in space-constrained ECUs |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow requirements |
Applications
| Automotive DC/DC Converter | 48 V Motor Control Inverter |
|---|---|
Use Scenario: High-efficiency bidirectional buck-boost converter in 48 V mild-hybrid vehicle architecture. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 200–300 kHz. Use Value: Low RDS(on) and fast switching (tf = 8–12 ns) reduce conduction and switching losses, enabling >96 % peak efficiency. | Use Scenario: Phase-leg high-side switch in electric power steering (EPS) or HVAC blower motor inverter. IC Role / Device Role / Timing Role: N-channel power switch in three-phase bridge, driven by isolated gate driver. Use Value: 175 °C rating and AEC-Q101 qualification ensure reliability in sealed motor housings with ambient >125 °C. |
| Engine Start-Stop System | On-Board Charger (OBC) Auxiliary Supply |
Use Scenario: Load switch controlling battery isolation during engine cranking in 12 V/48 V dual-battery systems. IC Role / Device Role / Timing Role: Single-pole high-current power switch with fast turn-on (<20 ns td(on)) for transient response. Use Value: 350 A pulsed drain current (IDM) handles cold-cranking surge without derating or paralleling. | Use Scenario: Primary-side switch in auxiliary flyback converter powering OBC control logic and gate drivers. IC Role / Device Role / Timing Role: 40 V-rated primary switch handling reflected output voltage and leakage spikes. Use Value: Low Coss (923–1295 pF) and Crss (37–52 pF) minimize capacitive losses and improve light-load regulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4F7AG | RDS(on) = 2.2 mΩ @ 10 V, but only rated to 150 °C TJ and not AEC-Q101 qualified | Lacks full automotive qualification; suitable for industrial or commercial 48 V systems only | Select when AEC-Q101 is not required and slightly lower RDS(on) justifies trade-off in qualification scope |
| IRFH5020TRPBF | RDS(on) = 2.7 mΩ @ 10 V, PowerSO-8 package (no wettable flanks), RthJC = 2.0 °C/W | Higher thermal resistance and no AOI-compatible terminations limit use in high-volume automotive SMT lines | Select only if legacy PowerSO-8 footprint must be retained and thermal margin permits higher RthJC |
Compared with STL220N4F7AG and IRFH5020TRPBF, SQS140ENW-T1_GE3 uniquely combines AEC-Q101 qualification, wettable flank terminals, 175 °C operation, and 1.26 °C/W RthJC-making it the only option qualified for next-generation under-hood 48 V power stages requiring zero-defect manufacturing and extended thermal headroom.
Availability
SQS140ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive power conversion, 48 V motor control, and engine start-stop systems requiring stable component supply across multi-year vehicle production cycles.
Supply support for SQS140ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS140ENW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-current, high-temperature 48 V electrification systems including mild hybrids, EPS, and DC/DC converters.
FAQ
What is the maximum continuous drain current rating for SQS140ENW-T1_GE3 at 125 °C case temperature?
The SQS140ENW-T1_GE3 supports 87 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limits of the PowerPAK® 1212-8SLW package and ensures safe operation in high-ambient under-hood environments where case temperatures routinely exceed 100 °C. The 152 A rating applies only at TC = 25 °C.
Does SQS140ENW-T1_GE3 have a qualified body diode for synchronous rectification?
Yes, the SQS140ENW-T1_GE3 includes an integrated body diode characterized with forward voltage VSD = 0.82–1.1 V at IF = 10 A and reverse recovery time trr = 38–78 ns. These parameters are fully specified and tested per JEDEC standards, enabling validated use in freewheeling paths of buck converters and half-bridge topologies without external diode supplementation.
Is SQS140ENW-T1_GE3 compatible with standard lead-free reflow profiles?
Yes, SQS140ENW-T1_GE3 is qualified for peak reflow temperatures up to 260 °C per J-STD-020, matching standard lead-free soldering processes. Its wettable flank terminals and 0.75 mm profile are designed for compatibility with Type 3 and Type 4 solder pastes, and the device meets IPC-A-610 Class 3 acceptability criteria for automotive assembly when using Vishay-recommended solder profiles (document #73257).
What does "100 % Rg and UIS tested" mean for SQS140ENW-T1_GE3?
"100 % Rg and UIS tested" means every SQS140ENW-T1_GE3 unit undergoes production testing for gate resistance (Rg = 0.5–1.7 Ω) and unclamped inductive switching (UIS) energy (EAS = 49.6 mJ). This 100 % screening ensures gate integrity against ESD and transient overstress, and guarantees avalanche ruggedness for inductive load switching-critical for automotive solenoid, relay, and motor drive applications where failure modes must be eliminated.
Can SQS140ENW-T1_GE3 be used in parallel configurations?
Yes, SQS140ENW-T1_GE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. The datasheet confirms stable operation up to 350 A pulsed current (IDM) and includes SOA curves showing safe operation at 10 ms and longer pulse widths. For parallel use, matched gate drive layout and symmetric thermal mounting are required to maintain balance.
SQS140ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- PowerPAK® 1212-8SLW
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 214A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.53mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3111 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 197W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8SLW
SQS140ENW-T1_GE3 FAQ
1.How can I place an order for SQS140ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS140ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS140ENW-T1_GE3 reliable?
The price and inventory of SQS140ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS140ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS140ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS140ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS140ENW-T1_GE3?
SQS140ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS140ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS140ENW-T1_GE3?
For technical support, including SQS140ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS140ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS140ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS140ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS140ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS140ENW-T1_GE3?
All SQS140ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS140ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS140ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS140ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SQS140ENW-T1_GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
