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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS142ENW-T1_GE3

Name: SQS142ENW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS142ENW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS142ENW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SLW

Datasheet:: SQS142ENW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 40 V (D-S)

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Product details

Overview

SQS142ENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 40 V MOSFET in PowerPAK 1212-8SLW package, delivering R_DS(on) = 4.5 mΩ at V_GS = 10 V, 110 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood power switching in 12 V/48 V systems.

For engineers reviewing the SQS142ENW-T1_GE3 datasheet, SQS142ENW-T1_GE3 pinout, SQS142ENW-T1_GE3 application, or SQS142ENW-T1_GE3 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, 175 °C junction rating, low R_thJC = 1.32 °C/W, and TrenchFET® Gen IV process enabling high-current DC/DC and motor control with minimal conduction loss.

Technical Context

This MOSFET employs a trench-gate silicon structure optimized for low on-resistance and fast switching in high-reliability automotive power stages. Its gate charge profile (Q_g = 23–35 nC, Q_gd = 5 nC) supports efficient PWM operation up to 100 kHz, while the body diode exhibits t_rr = 29–58 ns and Q_rr = 21–42 nC for synchronous rectification compatibility.

The device integrates wettable flank terminals for solder fillet inspection per IPC-A-610, and its thermal design leverages a 0.75 mm profile with R_thJC = 1.32 °C/W to enable high-power density mounting on compact PCBs - validated for 1" × 1" FR4 with 2 oz copper on both sides.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/48 V automotive bus protection and load switching
R_DS(on) @ V_GS = 10 V	4.5 mΩ - Enables ≤ 5 W conduction loss at 100 A, critical for high-efficiency traction inverters and DC/DC converters
I_D (continuous, T_C = 25 °C)	110 A - Supports high-current battery disconnect, starter solenoid drive, and e-fuse applications
T_J max	+175 °C - Qualified for under-hood environments including engine control units and transmission modules
Q_g	23–35 nC - Low gate drive energy reduces controller IC loading and enables use with standard gate drivers
R_thJC	1.32 °C/W - Enables direct heatsink attachment for thermal management without thermal vias or thick copper layers
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics including HTRB, H3TRB, and UIS

Pinout & Package

Package: PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm leadless surface-mount package with wettable flank terminals for AOI-compatible solder joints.

Pin/Terminal	Circuit Role	Design Meaning
1–4, S	Source	Low-inductance parallel connection point for return path; tied to exposed drain paddle via internal substrate
5–8, D	Drain	Main power output terminal; electrically connected to bottom-side thermal pad for heat dissipation
G	Gate	Control input with V_GS(th) = 2.3–3.3 V; requires <20 V absolute max rating for robust ESD-safe driving

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon process	Delivers 25 % lower R_DS(on) vs. prior generation at same die size, improving power density in space-constrained modules
Wettable flank terminals	Enables automated optical inspection of side-solder fillets without X-ray, reducing final-test cost in Tier-1 production lines
100 % R_g and UIS tested	Guarantees gate resistance consistency (1.1–3.3 Ω) and single-pulse avalanche ruggedness (E_AS = 26 mJ) for fault-tolerant designs
Low-profile 0.75 mm height	Permits stacking with adjacent components in multi-layer power modules and allows conformal coating over top surface
175 °C junction rating	Supports operation in ambient temperatures up to +125 °C with full derating margin, meeting ISO 16750-4 requirements

Applications

Engine Start-Stop System	48 V Mild Hybrid DC/DC Converter
Use Scenario: High-current battery isolation during engine cranking and regenerative braking events. IC Role / Device Role / Timing Role: Main N-channel high-side switch controlling bidirectional power flow between 12 V and 48 V domains. Use Value: 110 A I_D and 4.5 mΩ R_DS(on) minimize voltage drop and heat generation during 500 ms peak loads up to 800 A (IDM).	Use Scenario: Primary synchronous rectifier in dual-phase buck converter stepping 48 V down to 12 V for infotainment and ADAS subsystems. IC Role / Device Role / Timing Role: Low-side power switch with fast body diode recovery (t_rr = 29–58 ns) enabling ZVS operation. Use Value: Q_rr = 21–42 nC and low C_oss (474–664 pF) reduce switching losses and EMI in 200–300 kHz operation.
Electric Power Steering (EPS) Motor Driver	Automotive Body Control Module (BCM)
Use Scenario: Half-bridge leg in three-phase inverter supplying 30–50 A RMS to brushless EPS motor. IC Role / Device Role / Timing Role: High-current, thermally robust phase-leg switch operating continuously at T_J = 150 °C. Use Value: R_DS(on) drift limited to 0.0095 Ω at 175 °C ensures stable torque delivery across full temperature range.	Use Scenario: Solid-state replacement for mechanical relays controlling headlights, HVAC fans, and seat heaters. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated avalanche capability for inductive load suppression. Use Value: E_AS = 26 mJ and I_AS = 23 A allow safe clamping of L·di/dt transients without external snubbers.

Engine Start-Stop System

48 V Mild Hybrid DC/DC Converter

Use Scenario: High-current battery isolation during engine cranking and regenerative braking events.

IC Role / Device Role / Timing Role: Main N-channel high-side switch controlling bidirectional power flow between 12 V and 48 V domains.

Use Value: 110 A I_D and 4.5 mΩ R_DS(on) minimize voltage drop and heat generation during 500 ms peak loads up to 800 A (IDM).

Use Scenario: Primary synchronous rectifier in dual-phase buck converter stepping 48 V down to 12 V for infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: Low-side power switch with fast body diode recovery (t_rr = 29–58 ns) enabling ZVS operation.

Use Value: Q_rr = 21–42 nC and low C_oss (474–664 pF) reduce switching losses and EMI in 200–300 kHz operation.

Electric Power Steering (EPS) Motor Driver

Automotive Body Control Module (BCM)

Use Scenario: Half-bridge leg in three-phase inverter supplying 30–50 A RMS to brushless EPS motor.

IC Role / Device Role / Timing Role: High-current, thermally robust phase-leg switch operating continuously at T_J = 150 °C.

Use Value: R_DS(on) drift limited to 0.0095 Ω at 175 °C ensures stable torque delivery across full temperature range.

Use Scenario: Solid-state replacement for mechanical relays controlling headlights, HVAC fans, and seat heaters.

IC Role / Device Role / Timing Role: Single N-channel load switch with integrated avalanche capability for inductive load suppression.

Use Value: E_AS = 26 mJ and I_AS = 23 A allow safe clamping of L·di/dt transients without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V but rated only to 150 °C; no AEC-Q101 qualification; TO-220AB package	Lacks wettable flanks and automotive qualification; suitable for industrial prototypes but not production automotive ECUs	Select only if AEC-Q101 is not required and through-hole assembly is preferred
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V; AEC-Q101 qualified; PowerFLAT 5×6 package; higher Q_g = 45 nC	Higher gate drive demand increases controller power consumption; larger footprint (5 mm × 6 mm) limits layout density	Prefer when lowest possible R_DS(on) is critical and board area permits larger package

Compared with IRL1404ZPBF and STL220N4F7AG, SQS142ENW-T1_GE3 offers optimal balance of automotive qualification, compact 3.3 mm × 3.3 mm footprint, and low gate charge - making it ideal for space- and reliability-constrained 48 V system nodes where thermal performance and AOI compatibility are mandatory.

Availability

SQS142ENW-T1_GE3 is available at Aetrix Electronics and suitable for automotive power distribution, 48 V mild hybrid converters, and electric power steering systems requiring stable component supply across extended product lifecycles.

Supply support for SQS142ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQS142ENW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation 12 V/48 V vehicle architectures.

FAQ

What is the maximum continuous drain current rating for SQS142ENW-T1_GE3 at 125 °C case temperature?

The SQS142ENW-T1_GE3 supports 63 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8SLW package and ensures reliable operation in high-ambient under-hood environments. The device maintains R_DS(on) ≤ 7.6 mΩ at this condition, preserving efficiency in sustained high-load scenarios such as active cooling fan control.

Does SQS142ENW-T1_GE3 have wettable flank terminals, and why does that matter for automotive manufacturing?

Yes, SQS142ENW-T1_GE3 features wettable flank terminals on all eight side pins. This design enables automated optical inspection (AOI) of solder fillets during SMT reflow, eliminating the need for costly X-ray inspection in high-volume automotive production. It directly supports IPC-A-610 Class 3 compliance and improves first-pass yield for safety-critical modules like battery management systems and ADAS domain controllers.

What is the gate-source threshold voltage range for SQS142ENW-T1_GE3, and how does it affect drive circuit design?

The gate-source threshold voltage (V_GS(th)) for SQS142ENW-T1_GE3 is 2.3 V to 3.3 V at I_D = 250 μA. This tight range ensures consistent turn-on behavior across temperature and process variation, allowing use with standard 3.3 V or 5 V logic-level gate drivers without level-shifting. Designers can rely on full enhancement at V_GS ≥ 4.5 V, simplifying drive-stage selection for automotive microcontrollers with integrated gate drivers.

Is SQS142ENW-T1_GE3 suitable for synchronous rectification in a 48 V to 12 V DC/DC converter?

Yes, SQS142ENW-T1_GE3 is well-suited for synchronous rectification due to its low R_DS(on) (4.5 mΩ), fast body diode recovery (t_rr = 29–58 ns), and low Q_rr (21–42 nC). These parameters minimize reverse recovery losses and enable zero-voltage switching in high-frequency buck converters. Its 175 °C rating also supports sustained operation in thermally dense power modules where airflow is limited.

How does the thermal resistance R_thJC of SQS142ENW-T1_GE3 impact heatsink selection?

With R_thJC = 1.32 °C/W, SQS142ENW-T1_GE3 transfers heat efficiently from junction to case, enabling direct attachment to small heatsinks or metal-core PCBs. For example, at 110 A and 4.5 mΩ, conduction loss is ~55 W - requiring only ~72 °C/W total system thermal resistance (including heatsink and interface) to hold T_J ≤ 175 °C at 25 °C ambient. This simplifies thermal design versus higher-R_thJC alternatives.

SQS142ENW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8SLW

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1952 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 113W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK® 1212-8SLW

SQS142ENW-T1_GE3 FAQ

1.How can I place an order for SQS142ENW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS142ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS142ENW-T1_GE3 reliable?

The price and inventory of SQS142ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS142ENW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS142ENW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS142ENW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS142ENW-T1_GE3?

SQS142ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS142ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS142ENW-T1_GE3?

For technical support, including SQS142ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS142ENW-T1_GE3 requirements.

6.How does Aetrix verify that SQS142ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS142ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS142ENW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS142ENW-T1_GE3?

All SQS142ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS142ENW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS142ENW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS142ENW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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