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Vishay Siliconix SQS146ENW-T1_GE3
- Part No.:
- SQS146ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
SQS146ENW-T1_GE3.pdf
- Description:
- AUTOMOTIVE N-CHANNEL 40V (D-S)
- Quantity:
- Payment:
- Shipping:
Inventory:9,994
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Product details
Overview
SQS146ENW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8SLW package, rated for 40 V VDS, 88 A continuous drain current at TC = 25 °C, and RDS(on) = 6.0 mΩ at VGS = 10 V. It operates up to +175 °C junction temperature and features wettable flank terminals for automated optical inspection. Used in high-efficiency DC-DC converters and motor control stages in engine management systems.
For engineers reviewing the SQS146ENW-T1_GE3 datasheet, SQS146ENW-T1_GE3 pinout, SQS146ENW-T1_GE3 application, or SQS146ENW-T1_GE3 equivalent, this page delivers verified thermal resistance (RthJC = 1.64 °C/W), gate charge (Qg = 17–26 nC), avalanche energy rating (EAS = 17 mJ), and AEC-Q101 qualification status - all critical for automotive power stage design validation.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in high-current automotive loads. Its 8-pin PowerPAK® 1212-8SLW package integrates exposed drain pads on both top and bottom for dual-side thermal dissipation and supports 0.75 mm profile PCB stacking.
The device is fully characterized for UIS (unclamped inductive switching) and 100 % Rg tested. Gate threshold voltage (VGS(th)) ranges from 2.0 V to 3.5 V, enabling robust drive compatibility with 3.3 V and 5 V controllers while maintaining low leakage (IGSS ≤ ±100 nA).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection and load switching. |
| RDS(on) @ VGS = 10 V | 6.0 mΩ - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements in compact modules. |
| ID (continuous) | 88 A @ TC = 25 °C - Supports high-current solenoid drivers and BLDC phase legs without parallel devices. |
| EAS | 17 mJ - Rated single-pulse avalanche energy ensures reliability during inductive turn-off transients in motor drives. |
| RthJC | 1.64 °C/W - Low junction-to-case thermal resistance enables direct thermal interface to metal-core PCBs or heatsinks. |
| Qg | 17–26 nC - Optimized gate charge supports efficient 100–200 kHz PWM operation with minimal driver power loss. |
| TJ max | +175 °C - Qualified for under-hood applications including transmission control units and EPS modules. |
Pinout & Package
Package: PowerPAK® 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm low-profile thermally enhanced leadless package with wettable flank terminals for solder-joint inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (S) | Source | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5, 6, 7, 8 (D) | Drain | Four exposed drain pads on bottom side provide primary thermal path and low-inductance high-current return path. |
| G | Gate | Single gate terminal located adjacent to source pins - minimizes gate loop inductance for stable high-speed switching. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and UHAST. |
| Wettable flank terminals | Vertical copper sidewalls enable automated optical solder-joint inspection (AOI) without X-ray, improving manufacturing yield. |
| TrenchFET® Gen IV architecture | Delivers 15 % lower RDS(on) vs. prior generation at same die size, increasing power density in space-constrained ECUs. |
| 100 % Rg and UIS tested | Each unit undergoes production gate resistance screening and unclamped inductive switching stress to guarantee ruggedness. |
| Low-profile 0.75 mm height | Enables integration into ultra-thin power modules and stacked PCB assemblies where Z-height is constrained. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Electric Power Steering (EPS) Phase Leg |
|---|---|
Use Scenario: High-speed switching of 12 V fuel injectors with peak currents up to 80 A and 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Main power switch controlling injector coil energization and demagnetization. Use Value: 6.0 mΩ RDS(on) limits conduction loss to <3.8 W at 80 A, while 17 mJ EAS withstands inductive kickback without snubbers. |
Use Scenario: Half-bridge phase leg in 3-phase BLDC motor driver for steering assist torque generation. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification topology with 200 kHz PWM. Use Value: 17–26 nC Qg enables efficient gate driving with low-power 5 V microcontrollers; +175 °C rating supports under-hood placement. |
| 48 V Mild Hybrid DC-DC Converter | Automotive HVAC Blower Motor Controller |
Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V buck-boost converter for energy recovery. IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 150 kHz with 50 A RMS current. Use Value: RthJC = 1.64 °C/W allows direct mounting to aluminum heatsink, maintaining TJ < 150 °C at full load without forced air. |
Use Scenario: PWM-controlled high-side switch for 12 V blower motor with stall current up to 75 A. IC Role / Device Role / Timing Role: Load switch managing motor start-up surge and speed regulation via duty-cycle modulation. Use Value: VGS(th) = 2.0–3.5 V ensures reliable turn-on with standard 3.3 V MCU GPIO; AEC-Q101 qualification guarantees long-term field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL1404ZPBF | RDS(on) = 4.0 mΩ @ 10 V but larger TO-220AB package; no AEC-Q101 qualification; RthJC = 2.5 °C/W. | Not suitable for space-constrained or safety-critical automotive modules; limited to industrial or aftermarket designs. | Select only if board layout permits TO-220 footprint and AEC-Q101 compliance is not required. |
| STL220N4F7AG | 40 V, 220 A rated, but RDS(on) = 1.9 mΩ and PowerFLAT™ 5x6 package; AEC-Q101 qualified; higher cost and over-spec for 88 A use case. | Better suited for next-generation 48 V systems requiring >150 A; excessive performance margin increases BOM cost unnecessarily. | Prefer SQS146ENW-T1_GE3 when optimizing cost, thermal footprint, and qualification alignment for 12 V/24 V ECU loads. |
Compared with IRL1404ZPBF and STL220N4F7AG, SQS146ENW-T1_GE3 delivers optimal balance of AEC-Q101 compliance, 3.3 mm × 3.3 mm footprint, 6.0 mΩ on-resistance, and 1.64 °C/W thermal resistance - making it the preferred choice for volume automotive power stages where size, reliability, and thermal efficiency are jointly constrained.
Availability
SQS146ENW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across automotive production lifecycles.
Supply support for SQS146ENW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQS146ENW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in engine bay and chassis control modules.
FAQ
What is the maximum continuous drain current rating for SQS146ENW-T1_GE3 at 125 °C case temperature?
The SQS146ENW-T1_GE3 supports 50 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® 1212-8SLW package and ensures safe operation within the +175 °C maximum junction temperature limit. Designers must verify actual board-level thermal performance using RthJA = 54 °C/W and system-specific airflow or heatsinking.
Does SQS146ENW-T1_GE3 have wettable flank terminals, and why does that matter for automotive manufacturing?
Yes, SQS146ENW-T1_GE3 features wettable flank terminals - vertical copper sidewalls on all eight leads. This enables automated optical inspection (AOI) of solder fillets without X-ray, significantly improving first-pass yield in high-volume SMT lines for automotive ECUs. The feature is explicitly called out in the Vishay datasheet (S23-0334-Rev. A) and supports IPC-A-610 Class 3 acceptance criteria.
Is SQS146ENW-T1_GE3 qualified to AEC-Q101, and what tests does that include?
Yes, SQS146ENW-T1_GE3 is AEC-Q101 qualified. Per Vishay documentation, this includes stress testing for high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), unbiased high-humidity accelerated stress test (uHAST), and unclamped inductive switching (UIS). Full qualification data is available in Vishay's reliability report for document number 62137.
What is the typical total gate charge (Qg) of SQS146ENW-T1_GE3, and how does it affect PWM efficiency?
The SQS146ENW-T1_GE3 has a typical total gate charge (Qg) of 17 nC at VGS = 10 V, VDS = 20 V, and ID = 3 A. At 200 kHz PWM, this results in ~3.4 mW of dynamic gate drive loss per device - low enough to allow direct drive from standard 3.3 V/5 V microcontrollers without external gate drivers in many medium-frequency applications.
Can SQS146ENW-T1_GE3 be used in synchronous rectification for 48 V automotive DC-DC converters?
Yes, SQS146ENW-T1_GE3 is suitable for synchronous rectification in 48 V–12 V bidirectional converters. Its 40 V VDS rating provides sufficient margin above 48 V nominal rail (including transients up to 60 V), while its 6.0 mΩ RDS(on) and 1.64 °C/W RthJC ensure low conduction loss and effective thermal management at 50 A RMS output current.
SQS146ENW-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen IV
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 26 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1437 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 91W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerPAK® 1212-8SLW
SQS146ENW-T1_GE3 FAQ
1.How can I place an order for SQS146ENW-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQS146ENW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQS146ENW-T1_GE3 reliable?
The price and inventory of SQS146ENW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS146ENW-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQS146ENW-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS146ENW-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQS146ENW-T1_GE3?
SQS146ENW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQS146ENW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQS146ENW-T1_GE3?
For technical support, including SQS146ENW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS146ENW-T1_GE3 requirements.
6.How does Aetrix verify that SQS146ENW-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQS146ENW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS146ENW-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQS146ENW-T1_GE3?
All SQS146ENW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS146ENW-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQS146ENW-T1_GE3 part is unused and in its original packaging.
Return procedure for SQS146ENW-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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