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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS160ELNW-T1_GE3

Name: SQS160ELNW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS160ELNW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS160ELNW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SLW

Datasheet:: SQS160ELNW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Product details

Overview

SQS160ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK 1212-8SLW package, with R_DS(on) = 3.8 mΩ at V_GS = 10 V, 141 A continuous drain current at T_C = 25 °C, and AEC-Q101 qualification for under-hood power switching applications.

For engineers reviewing the SQS160ELNW-T1_GE3 datasheet, SQS160ELNW-T1_GE3 pinout, SQS160ELNW-T1_GE3 application, or SQS160ELNW-T1_GE3 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, 175 °C junction rating, low R_DS(on) at 4.5 V gate drive, and 0.75 mm profile enabling high-density automotive power modules.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to achieve low on-resistance and fast switching with Q_g = 47 nC (typ) and t_f = 14 ns (typ). Its 100 % R_g and UIS tested construction ensures robustness in automotive load dump and inductive switching events.

The device features wettable flank terminals for solder fillet inspection, a 0.76 °C/W junction-to-case thermal resistance, and operates across -55 °C to +175 °C junction temperature range - meeting requirements for engine control units, electric power steering, and 48 V mild hybrid systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V automotive bus with margin for transients up to ISO 7637-2 Pulse 5a.
R_DS(on) @ 10 V	3.8 mΩ - enables <1.5 W conduction loss at 60 A, reducing heatsink requirements in compact ECUs.
I_D (continuous)	141 A @ T_C = 25 °C - delivers high-current capability for motor drivers and DC-DC primary switches.
Q_g	47 nC (typ) - balances switching speed and gate driver power loss in 20–100 kHz PWM applications.
T_J max	+175 °C - qualified for under-hood placement without derating in high-ambient environments.
R_thJC	0.76 °C/W - allows direct thermal coupling to copper planes or heatsinks for efficient power dissipation.
V_GS(th)	1.5–2.5 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level microcontrollers.

Pinout & Package

Package: PowerPAK 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm low-profile surface-mount package with wettable flank terminals for AOI-compatible solder joint verification.

Pin/Terminal	Circuit Role	Design Meaning
1–4, S	Source	Four parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt switching.
5–8, D	Drain	Four exposed drain pads on bottom side provide low-inductance, high-current path to PCB ground plane.
G	Gate	Single top-side gate terminal with 0.9 Ω typical gate resistance - optimized for controlled turn-on/turn-off without external gate resistor.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test conditions including HTGB, HTRB, and UHAST - eliminates need for requalification in Tier 1 designs.
Wettable flank terminals	Enables automated optical inspection of solder fillets on all four sides - critical for zero-defect manufacturing in safety-critical ADAS modules.
TrenchFET® Gen IV process	Delivers 23 % lower R_DS(on) vs. prior generation at same die size - increases power density in space-constrained inverters.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness - ensures field reliability in motor fault conditions.
0.75 mm profile	Reduces board bending stress in multi-layer automotive PCBs and enables stacking with adjacent components in tight ECU layouts.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Electric Power Steering (EPS) Motor Phase Switch
Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 120 A and 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET switch controlling injector coil energization and flyback energy recirculation via internal body diode. Use Value: 3.8 mΩ R_DS(on) minimizes I²R heating during sustained injection pulses; 175 °C rating prevents thermal shutdown during extended idle-stop operation.	Use Scenario: Three-phase inverter leg switching in 12 V EPS systems requiring >80 A peak phase current and <100 ns dead-time control. IC Role / Device Role / Timing Role: High-current, low-loss power switch in half-bridge configuration with fast fall time (14 ns typ) enabling precise torque control. Use Value: Wettable flanks ensure solder joint integrity after thermal cycling; 0.76 °C/W R_thJC maintains junction temp <150 °C at 90 A continuous.
48 V Mild Hybrid DC-DC Converter Primary Switch	Automotive HVAC Blower Motor Controller
Use Scenario: Primary-side synchronous rectification in bidirectional 48 V/12 V DC-DC converters handling up to 150 A peak current. IC Role / Device Role / Timing Role: High-efficiency N-channel switch operating at 50–100 kHz with low Q_g (47 nC) to minimize gate drive losses. Use Value: 4.5 V R_DS(on) = 5.9 mΩ enables compatibility with 5 V gate drivers; AEC-Q101 qualification covers voltage transients per ISO 16750-2.	Use Scenario: PWM-controlled blower motor driver in climate control systems requiring 60–100 A continuous current and reverse polarity protection. IC Role / Device Role / Timing Role: Low-side switch managing motor current direction and regenerative braking energy dissipation through body diode conduction. Use Value: V_SD = 0.82 V (typ) at 10 A reduces heat generation during freewheeling; 192 A pulsed rating handles startup surges.

Engine Control Unit (ECU) Fuel Injector Driver

Electric Power Steering (EPS) Motor Phase Switch

Use Scenario: High-speed, high-current switching of 12 V fuel injectors with peak currents up to 120 A and 10 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET switch controlling injector coil energization and flyback energy recirculation via internal body diode.

Use Value: 3.8 mΩ R_DS(on) minimizes I²R heating during sustained injection pulses; 175 °C rating prevents thermal shutdown during extended idle-stop operation.

Use Scenario: Three-phase inverter leg switching in 12 V EPS systems requiring >80 A peak phase current and <100 ns dead-time control.

IC Role / Device Role / Timing Role: High-current, low-loss power switch in half-bridge configuration with fast fall time (14 ns typ) enabling precise torque control.

Use Value: Wettable flanks ensure solder joint integrity after thermal cycling; 0.76 °C/W R_thJC maintains junction temp <150 °C at 90 A continuous.

48 V Mild Hybrid DC-DC Converter Primary Switch

Automotive HVAC Blower Motor Controller

Use Scenario: Primary-side synchronous rectification in bidirectional 48 V/12 V DC-DC converters handling up to 150 A peak current.

IC Role / Device Role / Timing Role: High-efficiency N-channel switch operating at 50–100 kHz with low Q_g (47 nC) to minimize gate drive losses.

Use Value: 4.5 V R_DS(on) = 5.9 mΩ enables compatibility with 5 V gate drivers; AEC-Q101 qualification covers voltage transients per ISO 16750-2.

Use Scenario: PWM-controlled blower motor driver in climate control systems requiring 60–100 A continuous current and reverse polarity protection.

IC Role / Device Role / Timing Role: Low-side switch managing motor current direction and regenerative braking energy dissipation through body diode conduction.

Use Value: V_SD = 0.82 V (typ) at 10 A reduces heat generation during freewheeling; 192 A pulsed rating handles startup surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.0 mΩ @ 10 V; TO-220AB package; no wettable flanks; not AEC-Q101 qualified.	Limited to non-safety-critical 12 V industrial controls; unsuitable for automated optical inspection or under-hood deployment.	Select only for cost-sensitive, non-automotive prototyping where thermal profile and qualification are secondary.
STL220N6F7	R_DS(on) = 3.5 mΩ @ 10 V; PowerFLAT 5x6 package; AEC-Q101 qualified; 0.9 mm height.	Higher profile limits stacking density; lacks wettable flanks, reducing AOI capability in high-reliability lines.	Prefer when slightly lower R_DS(on) is prioritized over solder joint inspection and ultra-low profile.

Compared with IRL1404ZPBF and STL220N6F7, SQS160ELNW-T1_GE3 uniquely combines AEC-Q101 qualification, wettable flank terminals, 0.75 mm height, and 3.8 mΩ R_DS(on) - making it optimal for space-constrained, zero-defect automotive power stages where thermal performance and process traceability are mandatory.

Availability

SQS160ELNW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply and full automotive qualification traceability.

Supply support for SQS160ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS160ELNW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET product line, engineered specifically for high-current, high-temperature power switching in next-generation 12 V and 48 V vehicle electrical architectures.

FAQ

What is the maximum continuous drain current rating for SQS160ELNW-T1_GE3 at 125 °C case temperature?

The SQS160ELNW-T1_GE3 supports 81 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8SLW package and ensures safe operation in high-ambient under-hood environments. The 141 A rating applies only at T_C = 25 °C.

Does SQS160ELNW-T1_GE3 have a specified body diode reverse recovery time (t_rr)?

Yes, SQS160ELNW-T1_GE3 specifies t_rr = 38–76 ns under test conditions of V_DD = 48 V, I_FM = 3 A, di/dt = 100 A/μs. This fast recovery characteristic reduces switching losses and EMI in synchronous rectifier and freewheeling applications where the intrinsic body diode conducts.

Is SQS160ELNW-T1_GE3 compatible with lead-free reflow soldering processes?

Yes, SQS160ELNW-T1_GE3 is rated for peak reflow temperatures up to 260 °C per JEDEC J-STD-020, and Vishay provides a detailed solder profile in document 73257. Its wettable flank terminals are designed for compatibility with standard lead-free reflow cycles while supporting post-solder AOI verification.

What does "100 % R_g and UIS tested" mean for SQS160ELNW-T1_GE3?

"100 % R_g and UIS tested" means every SQS160ELNW-T1_GE3 unit undergoes production screening for gate resistance (0.4–1.4 Ω) and unclamped inductive switching robustness. This ensures consistent gate drive behavior and validated avalanche energy handling (E_AS = 45 mJ), critical for automotive motor and solenoid drive reliability.

Can SQS160ELNW-T1_GE3 be used as a direct replacement for older Vishay SQ series MOSFETs like SQJQ910EL?

No, SQS160ELNW-T1_GE3 is not a direct replacement for SQJQ910EL. While both are 60 V N-channel automotive MOSFETs, SQS160ELNW-T1_GE3 uses PowerPAK 1212-8SLW packaging with wettable flanks and Gen IV silicon, whereas SQJQ910EL uses PowerPAK SO-8. Pinout, thermal performance, and R_DS(on) differ - PCB layout and thermal design must be revalidated.

SQS160ELNW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8SLW

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 141A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3866 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 113W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK® 1212-8SLW

SQS160ELNW-T1_GE3 FAQ

1.How can I place an order for SQS160ELNW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS160ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS160ELNW-T1_GE3 reliable?

The price and inventory of SQS160ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS160ELNW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS160ELNW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS160ELNW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS160ELNW-T1_GE3?

SQS160ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS160ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS160ELNW-T1_GE3?

For technical support, including SQS160ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS160ELNW-T1_GE3 requirements.

6.How does Aetrix verify that SQS160ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS160ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS160ELNW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS160ELNW-T1_GE3?

All SQS160ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS160ELNW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS160ELNW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS160ELNW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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