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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQS164ELNW-T1_GE3

Name: SQS164ELNW-T1_GE3
Brand: Vishay Siliconix
SKU: SQS164ELNW-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQS164ELNW-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8SLW

Datasheet:: SQS164ELNW-T1_GE3.pdf

Description:: AUTOMOTIVE N-CHANNEL 60 V (D-S)

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Product details

Overview

SQS164ELNW-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel 60 V MOSFET in PowerPAK 1212-8SLW package, delivering R_DS(on) = 6.9 mΩ at V_GS = 10 V and 10.8 mΩ at 4.5 V, rated for 82 A continuous drain current at T_C = 25 °C, and qualified to AEC-Q101 for under-hood power switching in 12 V/48 V systems.

For engineers reviewing the SQS164ELNW-T1_GE3 datasheet, SQS164ELNW-T1_GE3 pinout, SQS164ELNW-T1_GE3 application, or SQS164ELNW-T1_GE3 equivalent, this page provides verified thermal resistance (R_thJC = 1.44 °C/W), wettable flank terminal geometry, 175 °C junction rating, and dynamic gate charge (Q_g = 27–41 nC) data essential for high-reliability automotive power stage design.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology optimized for low conduction loss and fast switching in DC-DC converters and motor drivers. Its 0.75 mm profile and wettable flank terminals support automated optical inspection (AOI) and enhance solder joint reliability on thermally demanding PCBs.

The device features fully characterized avalanche capability (E_AS = 22 mJ), 100 % R_g and UIS tested screening, and a gate threshold voltage range of 1.5–2.5 V with tight distribution-enabling robust gate drive margin in noisy automotive environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V battery architectures and load-dump transient protection
R_DS(on) @ 10 V	6.9 mΩ - Enables <1 W conduction loss at 40 A, critical for high-efficiency 12 V starter relays and solenoid drivers
R_DS(on) @ 4.5 V	10.8 mΩ - Ensures turn-on capability with standard 3.3 V/5 V logic-level gate drivers without level-shifting
I_D (continuous)	82 A @ T_C = 25 °C - Supports high-current loads such as HVAC blowers and EPS assist motors
Q_g	27–41 nC - Determines gate driver power requirement and switching speed trade-off in PWM-controlled inverters
R_thJC	1.44 °C/W - Allows direct heatsinking via drain pad for thermal management in space-constrained modules
T_J max	+175 °C - Meets under-hood temperature requirements per ISO 16750-4 for engine compartment placement

Pinout & Package

Package: PowerPAK 1212-8SLW - 3.3 mm × 3.3 mm × 0.75 mm low-profile surface-mount package with wettable flank terminals for AOI-compatible solder joints and enhanced thermal transfer through exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 7–8 (Drain)	Power Drain (D)	Internally connected to large copper drain pad; primary heat path to PCB and mechanical mounting surface
5–6 (Source)	Power Source (S)	Low-inductance source connection; forms return path for high di/dt motor and converter currents
2 (Gate)	Control Gate (G)	High-impedance control input requiring <1.5 Ω gate resistance to damp ringing in 100 kHz+ switching

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and ESD testing per stress test plan
Wettable flank terminals	Enables automated optical inspection of side-solder fillets, improving process yield in high-volume SMT lines
TrenchFET® Gen IV silicon	Delivers 15 % lower R_DS(on) vs. prior generation at same die size, reducing board area and thermal footprint
100 % R_g and UIS tested	Guarantees gate resistance consistency and single-pulse avalanche ruggedness for unclamped inductive switching
Low R_thJC (1.44 °C/W)	Permits direct thermal coupling to metal-core PCB or heatsink without thermal interface material in compact modules

Applications

Engine Start-Stop System	Automotive DC-DC Converter
Use Scenario: Replaces mechanical relay in 12 V start-stop battery management to enable rapid, silent engine restart during coasting. IC Role / Device Role / Timing Role: High-side power switch controlling starter solenoid coil and pre-charge circuit with 82 A surge capability. Use Value: 6.9 mΩ R_DS(on) minimizes voltage drop across switch during cranking, preserving headlight brightness and ECU stability.	Use Scenario: Primary synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid vehicles. IC Role / Device Role / Timing Role: Low-side switching element operating at 200–500 kHz with body diode recovery time <52 ns. Use Value: Fast trr (26–52 ns) and low Q_rr (16–32 nC) reduce switching losses and EMI in high-frequency power stages.
Electric Power Steering (EPS)	Onboard Charger Input Stage
Use Scenario: Half-bridge high-side switch in 3-phase EPS motor inverter driving 15–25 kW assist torque. IC Role / Device Role / Timing Role: N-channel MOSFET operated with bootstrap gate drive, leveraging 175 °C T_J rating for sustained high-load operation. Use Value: R_DS(on) drift <15 % over full -40 to +175 °C range ensures consistent torque response across ambient conditions.	Use Scenario: AC input bridge replacement in 3.3 kW onboard charger using active rectification topology. IC Role / Device Role / Timing Role: Unidirectional switch in Vienna rectifier leg, conducting 30–40 A RMS with low conduction loss. Use Value: 0.75 mm profile enables dense layout in constrained OBC modules while maintaining 104 W P_D at T_C = 25 °C.

Engine Start-Stop System

Automotive DC-DC Converter

Use Scenario: Replaces mechanical relay in 12 V start-stop battery management to enable rapid, silent engine restart during coasting.

IC Role / Device Role / Timing Role: High-side power switch controlling starter solenoid coil and pre-charge circuit with 82 A surge capability.

Use Value: 6.9 mΩ R_DS(on) minimizes voltage drop across switch during cranking, preserving headlight brightness and ECU stability.

Use Scenario: Primary synchronous rectifier in 48 V-to-12 V bidirectional buck-boost converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Low-side switching element operating at 200–500 kHz with body diode recovery time <52 ns.

Use Value: Fast trr (26–52 ns) and low Q_rr (16–32 nC) reduce switching losses and EMI in high-frequency power stages.

Electric Power Steering (EPS)

Onboard Charger Input Stage

Use Scenario: Half-bridge high-side switch in 3-phase EPS motor inverter driving 15–25 kW assist torque.

IC Role / Device Role / Timing Role: N-channel MOSFET operated with bootstrap gate drive, leveraging 175 °C T_J rating for sustained high-load operation.

Use Value: R_DS(on) drift <15 % over full -40 to +175 °C range ensures consistent torque response across ambient conditions.

Use Scenario: AC input bridge replacement in 3.3 kW onboard charger using active rectification topology.

IC Role / Device Role / Timing Role: Unidirectional switch in Vienna rectifier leg, conducting 30–40 A RMS with low conduction loss.

Use Value: 0.75 mm profile enables dense layout in constrained OBC modules while maintaining 104 W P_D at T_C = 25 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 4.8 mΩ @ 10 V but larger TO-220AB package; no wettable flanks or AEC-Q101 certification	Not suitable for automated AOI or under-hood SMT assembly; limited to chassis-mounted discrete designs	Select only if legacy TO-220 footprint and higher current margin outweigh SMT manufacturability needs
STL220N6F7AG	Same PowerFLAT 5x6 package and AEC-Q101 rating, but R_DS(on) = 1.7 mΩ @ 10 V and higher Q_g (62 nC)	Better conduction loss but slower switching; requires stronger gate driver for same frequency operation	Prefer when minimizing conduction loss dominates over switching loss in <100 kHz applications

Compared with IRL1404ZPBF and STL220N6F7AG, SQS164ELNW-T1_GE3 balances low R_DS(on), compact wettable-flank packaging, and moderate Q_g-making it optimal for space-constrained, high-volume automotive SMT power stages where thermal performance and process compatibility are jointly critical.

Availability

SQS164ELNW-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and 48 V mild hybrid DC-DC converters requiring stable component supply across extended automotive product lifecycles.

Supply support for SQS164ELNW-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQS164ELNW-T1_GE3 belongs to Vishay's TrenchFET® Gen IV automotive MOSFET family, engineered specifically for high-current, high-temperature power switching in next-generation 12 V/48 V vehicle electrical architectures.

FAQ

What is the maximum junction temperature rating for SQS164ELNW-T1_GE3?

The SQS164ELNW-T1_GE3 has a maximum operating junction temperature of +175 °C, validated per AEC-Q101 stress testing and confirmed in its absolute maximum ratings table. This rating allows reliable operation in under-hood environments where ambient temperatures exceed 125 °C, provided thermal design maintains T_J ≤ 175 °C under worst-case power dissipation. The device's R_thJC = 1.44 °C/W supports effective heatsinking to meet this requirement.

Is SQS164ELNW-T1_GE3 suitable for 4.5 V gate drive applications?

Yes, SQS164ELNW-T1_GE3 is fully specified for 4.5 V gate drive, with R_DS(on) = 10.8 mΩ at V_GS = 4.5 V and I_D = 10 A. Its gate threshold voltage range (1.5–2.5 V) ensures strong enhancement-mode turn-on with standard 3.3 V or 5 V microcontroller outputs, eliminating need for gate drivers in many automotive body-control and lighting applications.

Does SQS164ELNW-T1_GE3 have wettable flank terminals?

Yes, SQS164ELNW-T1_GE3 features wettable flank terminals as explicitly stated in its Vishay datasheet (S23-0706-Rev. C). These chamfered side terminations enable automated optical inspection of solder fillets during SMT reflow, improving process control and field reliability in high-volume automotive manufacturing lines.

What is the total gate charge (Q_g) specification for SQS164ELNW-T1_GE3?

The total gate charge Q_g for SQS164ELNW-T1_GE3 is 27–41 nC, measured at V_GS = 10 V, V_DS = 30 V, and I_D = 3 A. This value directly determines gate driver power consumption and switching transition times; for example, driving Q_g = 34 nC (typical) at 100 kHz requires ~3.4 mW average gate power, assuming 10 Ω gate resistance and 10 V swing.

How does the body diode performance of SQS164ELNW-T1_GE3 compare to standard rectifiers?

The body diode of SQS164ELNW-T1_GE3 exhibits V_SD = 0.82–1.1 V at I_F = 10 A and t_rr = 26–52 ns, with Q_rr = 16–32 nC. Compared to discrete Schottky rectifiers, its forward voltage is higher but its reverse recovery is faster and more predictable-making it well-suited for synchronous rectification in high-frequency DC-DC converters where controlled commutation is critical.

SQS164ELNW-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® 1212-8SLW

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2159 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerPAK® 1212-8SLW

SQS164ELNW-T1_GE3 FAQ

1.How can I place an order for SQS164ELNW-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQS164ELNW-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQS164ELNW-T1_GE3 reliable?

The price and inventory of SQS164ELNW-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQS164ELNW-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQS164ELNW-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQS164ELNW-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQS164ELNW-T1_GE3?

SQS164ELNW-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQS164ELNW-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQS164ELNW-T1_GE3?

For technical support, including SQS164ELNW-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQS164ELNW-T1_GE3 requirements.

6.How does Aetrix verify that SQS164ELNW-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQS164ELNW-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQS164ELNW-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQS164ELNW-T1_GE3?

All SQS164ELNW-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQS164ELNW-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQS164ELNW-T1_GE3 part is unused and in its original packaging.

Return procedure for SQS164ELNW-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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